TWI645577B - 具有用於側發光之定型生長基板之發光二極體 - Google Patents

具有用於側發光之定型生長基板之發光二極體 Download PDF

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Publication number
TWI645577B
TWI645577B TW103101052A TW103101052A TWI645577B TW I645577 B TWI645577 B TW I645577B TW 103101052 A TW103101052 A TW 103101052A TW 103101052 A TW103101052 A TW 103101052A TW I645577 B TWI645577 B TW I645577B
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TW
Taiwan
Prior art keywords
growth substrate
led
light
led die
optical feature
Prior art date
Application number
TW103101052A
Other languages
English (en)
Chinese (zh)
Other versions
TW201432941A (zh
Inventor
馬克 麥森 巴特渥夫
Mark Melvin Butterworth
Original Assignee
皇家飛利浦有限公司
Koninklijke Philips N.V.
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Application filed by 皇家飛利浦有限公司, Koninklijke Philips N.V. filed Critical 皇家飛利浦有限公司
Publication of TW201432941A publication Critical patent/TW201432941A/zh
Application granted granted Critical
Publication of TWI645577B publication Critical patent/TWI645577B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/726—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)
TW103101052A 2013-01-10 2014-01-10 具有用於側發光之定型生長基板之發光二極體 TWI645577B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361750914P 2013-01-10 2013-01-10
US61/750,914 2013-01-10

Publications (2)

Publication Number Publication Date
TW201432941A TW201432941A (zh) 2014-08-16
TWI645577B true TWI645577B (zh) 2018-12-21

Family

ID=50000054

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103101052A TWI645577B (zh) 2013-01-10 2014-01-10 具有用於側發光之定型生長基板之發光二極體

Country Status (7)

Country Link
US (1) US20150340566A1 (https=)
EP (1) EP2943986B1 (https=)
JP (1) JP6751562B2 (https=)
KR (1) KR102146595B1 (https=)
CN (1) CN104885235B (https=)
TW (1) TWI645577B (https=)
WO (1) WO2014108821A1 (https=)

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BR112015025346A2 (pt) * 2013-04-05 2017-07-18 Federal Mogul Corp pistão produzido através do uso de técnicas de fabricação de aditivos
US9831407B2 (en) * 2013-11-21 2017-11-28 Lumens Co., Ltd. Light emitting device package, backlight unit, illumination apparatus, and method of manufacturing light emitting device package
CN105765722B (zh) * 2013-11-22 2019-10-22 赫普塔冈微光有限公司 紧凑光电模块
TWI757315B (zh) * 2017-07-28 2022-03-11 晶元光電股份有限公司 發光裝置以及其製造方法
WO2019028314A1 (en) * 2017-08-03 2019-02-07 Cree, Inc. HIGH DENSITY PIXELIZED LED CHIPS AND NETWORK DEVICES AND METHODS OF MANUFACTURE
DE102017129623B4 (de) 2017-12-12 2024-03-28 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Licht emittierendes Halbleiterbauelement
US10862002B2 (en) 2018-04-27 2020-12-08 Facebook Technologies, Llc LED surface modification with ultraviolet laser
US10811581B2 (en) 2018-06-15 2020-10-20 Nichia Corporation Method of manufacturing semiconductor device
CN109638137A (zh) * 2018-11-07 2019-04-16 惠州市华星光电技术有限公司 倒装led芯片及直下式背光模组
US11681090B2 (en) 2019-05-30 2023-06-20 Nichia Corporation Light emitting module and method of manufacturing same
JP6852822B2 (ja) * 2019-05-30 2021-03-31 日亜化学工業株式会社 発光モジュール及びその製造方法
CN115413368A (zh) * 2020-03-18 2022-11-29 艾维森纳科技有限公司 用于平面内光学互连的led阵列

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Also Published As

Publication number Publication date
TW201432941A (zh) 2014-08-16
CN104885235B (zh) 2018-06-22
EP2943986A1 (en) 2015-11-18
US20150340566A1 (en) 2015-11-26
KR20150104624A (ko) 2015-09-15
KR102146595B1 (ko) 2020-08-31
EP2943986B1 (en) 2023-03-01
CN104885235A (zh) 2015-09-02
WO2014108821A1 (en) 2014-07-17
JP2016506634A (ja) 2016-03-03
JP6751562B2 (ja) 2020-09-09

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