CN115413368A - 用于平面内光学互连的led阵列 - Google Patents
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Abstract
蓝宝石衬底上的LED阵列可安装于硅互连芯片上，其中所述阵列的LED插入到所述硅互连芯片上的波导的孔中。所述蓝宝石衬底及所述硅互连芯片两者可具有用于向或从所述LED载运电信号的微凸块，且所述蓝宝石衬底及所述硅互连芯片可使用所述微凸块接合在一起。所述LED可经配置以优先在横向方向上发射光，以增加光向所述波导中的耦合。
Description
背景技术
对于高速计算，光学互连是令人感兴趣的。特定来说，使用非常小的(例如，微米尺度)LED或“微型LED”作为数据传输器尤其令人感兴趣，这归因于通过利用呈合理大小的外形规格的大量光学互连件为电子芯片之间的光学数据业务实现潜在带宽增加。此方法的挑战可包含用于制作微型LED的制造友好型解决方案以及来自微型LED的光向光学互连平台中的高效耦合。
发明内容
一些实施例提供一种发光装置，其包括：波导；发光二极管，其包括：氮化镓(GaN)n型层；GaN p型层；(GaN)有源层，其位于所述n型层与所述p型层之间，包括含有In的至少一个量子阱层；反射层，其接近于所述p型层，其中所述至少一个量子阱与所述反射层之间的距离经选择使得从所述有源层产生的光优先在远离法向于所述有源层的表面的方向上发射成横向模式；其中所述波导及所述有源层经定位以允许从所述有源层发射的光高效耦合到所述波导中。在一些此类实施例中，所述至少一个量子阱与所述反射层之间的所述经选择距离取决于相对于由所述反射层反射的光的相移。在一些此类实施例中，所述反射层是金属。在一些此类实施例中，反射层是所述p型层的p侧接点。在一些此类实施例中，所述至少一个量子阱与所述反射层之间的所述距离经选择使得从所述有源层产生的所述光的大多数耦合到所述波导中。在一些实施例中，所述反射层经选择使得从所述有源层产生的所述光的超过85％耦合到所述波导中。在一些实施例中，耦合到所述波导中的光占从所述有源层产生的所述光的分率是至少70％，更优选地80％或以上。
一些实施例提供一种接合到硅互连芯片的微型LED阵列芯片，其包括：第一衬底；多个微型LED，其位于所述衬底的第一表面上；多个第一微凸块金属化物，其位于所述衬底的所述第一表面上；硅晶片；多个波导，其位于所述硅晶片上，所述波导包含至少部分地接纳所述微型LED的孔；多个第二微凸块金属化物，其位于所述硅晶片上，所述第二微凸块金属化物通过焊料微凸块接合到所述第一微凸块金属化物。在一些此类实施例中，所述微型LED各自包括：n型GaN层；p型GaN层；有源层，其包含位于所述n型层与所述p型层之间的至少一个量子阱(QW)；及接点金属化物，其位于所述p型层上；其中所述有源层与所述p型层上的所述接点金属化物之间的距离是使得所述LED内的光优先朝向所述LED的侧边缘发射的距离。在一些此类实施例中，所述波导包括氮化硅波导。一些此类实施例进一步包括封盖所述波导的一端的反射金属化物。
在审阅本公开后会更全面地领会本发明的这些及其它方面。
附图说明
图1是根据本发明的各方面的耦合到基于硅的互连芯片的微型LED阵列芯片的部分的横截面图。
图2图解说明图1的耦合到基于硅的互连芯片的微型LED阵列芯片关于LED中的一者的一部分连同由所述LED发射的光的实例偶极辐射型式。
图3是根据本发明的各方面的LED阵列的实施例的平面图。
图4是根据本发明的各方面的硅互连芯片的实施例的平面图。
图5是根据本发明的各方面的接合到硅互连芯片的微型LED阵列芯片的横截面图。
图6是展示耦合成导引模式的光的分率相对于QW到反射器距离的图表。
具体实施方式
在一些实施例中，微型LED阵列芯片包含多个微型LED。微型LED邻近于波导的空腔或位于波导的空腔内。波导可完全或部分地位于衬底上或上方(或者下方)。在一些实施例中，衬底可为用于半导体芯片的中介层、封装衬底、基于硅的互连芯片或者在各种实施例中包含逻辑电路系统或相关电路系统的半导体芯片。微型LED可由来自半导体芯片的电信号驱动。在各种实施例中，波导用于将微型LED光学耦合到可为光电二极管的光学敏感接收组件，例如光电检测器。光电检测器通常耦合到电路系统以将电信号提供到另一半导体芯片或同一半导体芯片。共同地，微型LED及光电检测器可在布建多芯片模块的光学芯片到芯片数据通信(例如在多芯片模块内的芯片之间或在不同多芯片模块中的芯片之间或者芯片内数据通信)时使用。
图1中展示耦合到基于硅的互连芯片的微型LED阵列芯片的部分的横截面图。微型LED阵列芯片包含形成于衬底(例如蓝宝石衬底113，如图1中所图解说明)上的多个微型LED111a、b(其中图1中展示两个)。微型LED展示为从蓝宝石衬底113大体延伸到光学波导131的孔或空腔137a、b中。所述波导可位于衬底(例如硅衬底)上，或如图1中所展示，位于硅晶片135上的氧化硅层133上。
微型LED阵列可在蓝宝石衬底上使用已知用于基于InGaN/GaN的LED的常规工艺来制作。使用MOCVD或其它外延生长技术，将GaN缓冲层沉积于蓝宝石衬底上，后续至少接着n型(例如，Si掺杂)GaN层、基于InGaN的有源层(例如，通过GaN阻障层分隔开的InGaN量子阱)及p型(例如，Mg掺杂)GaN层117。在生长之后，在高温下对晶片进行退火以便驱除氢且活化GaN:Mg层。通过标准技术沉积p型欧姆接点金属化物123并进行图案化。一种优选金属是基于Ag的，例如NiAg或纯Ag。(可任选地采用上覆于p型金属化物上且封装p型金属化物的任选囊封金属化物，例如以尤其在Ag的情形中减轻电迁移。)通过对晶片进行图案化及对结构进行蚀刻(例如，使用RIE或ICP蚀刻)而形成“p台面”119以暴露n型GaN层115。接着在经暴露n层上通过标准技术沉积n型欧姆接点金属化物121并进行图案化。接下来，通过围绕p接点及n接点进行图案化及向下蚀刻直到蓝宝石衬底、在蓝宝石衬底附近进行蚀刻或向蓝宝石衬底中进行蚀刻而形成“n台面”115。接着，可对蓝宝石衬底进行接地及抛光，且可使用此项技术中已知的工艺(例如基于激光的划刻与折断)从经薄化蓝宝石衬底切割个别LED阵列芯片。个别LED阵列芯片可以各种各样的布局保持非常多的微型LED。
p台面每侧的典型大小(例如就宽度来说)小于10um、优选地小于5um且更优选地小于3um。n台面每侧的典型大小(例如就宽度来说)小于20um、优选地小于10um且更优选地小于5um。沉积电互连迹线以电连接到各种LED的p欧姆接点及n欧姆接点且使其向外布线到沉积于蓝宝石表面上的微凸块，并且可视需要使用钝化电介质来将互连件与LED结构的部件电隔离(图1中未展示)。LED阵列芯片尺寸可为例如一侧上几十微米，甚至最多到1mm或更多，从而允许利用现有拾取与放置工具对其进行搬运。
硅互连芯片包括上面形成有氧化物层133的硅晶片135，后续接着在所述氧化物层上沉积并图案化光学波导层131。举例来说，用于波导层的典型材料是SiNx。在一些实施例中，在图案化波导层时，提供或形成插入孔137a、b，使得含有LED芯片的台面可插入到所述插入孔中，从而将微型LED的有源层有效插入波导内部。
在操作中，激活LED阵列芯片，使得来自有源层119(其延伸范围可由p台面区界定)的光可耦合到Si互连芯片上的波导中。通常，可能预期耦合量是非常低的，这归因于来自有源层的相当数量的光向外耦合到蓝宝石衬底中而导致损耗。在一些实施例中，通过尤其在量子阱(QW)装置的情形中利用光学空腔效应(例如干涉效应)且通过采用紧密接近于QW的高度反射接点(例如，p接点)而修改LED有源层的偶极辐射型式，使得光发射主要耦合成横向模式，使得减少量的光或非常少的光逃逸到蓝宝石衬底中。在一些实施例中，这是通过控制QW上面的外延层的总厚度来实现，且通过采用高度反射p侧接点(例如基于Ag的接点)而提高有效性。在此实施例中，通过恰当空腔调谐，可考虑将光从GaN外延层朝向LED台面边缘导引、优先发射且允许光以(波导的)数值孔径(NA)内的角度耦合到波导中，从而导致来自LED有源层的光向波导的高效耦合。举例来说，图2图解说明图1的装置的关于LED中的一个LED 111b的一部分连同从所述LED的在有源区域119附近的一部分发射的光的实例偶极辐射型式。在图2中，偶极辐射型式211是相对于波导坐落在上面的衬底133、135的法线被大体稍微横向地引导，使得光可优先朝向波导及向波导中导引或发射。为了在波导的一个方向上引导光，可用反射金属化物139a、b(例如加工到Si互连芯片上)封盖波导的一端，例如图1及图2两者中所图解说明。
图6中概述一些此类实施例的详细计算。图6是展示耦合成横向模式的光的分率相对于QW到反射器距离的图表。假设p侧表面的单QW有源区域及金属接点具有90％的反射率，计算耦合成横向模式(可耦合到波导中而非损耗到蓝宝石衬底中)的光的分率。此量绘制为针对相对于无限导电金属反射器的0度相移及90度相移的两个不同情形随QW与反射器之间的距离(即，半空腔距离，d)(就全波光学厚度(FWOT)来说)而变。图6的插图中展示在0度相移的情况下针对d＝0.4、0.65及0.85FWOT的情形的QW辐射型式。
将从GaN LED的横向模式发射称为高效耦合到光学波导中。GaN/蓝宝石(分别地，n＝2.4、1.77)界面处在蓝色中的全内反射(TIR)的临界角是相对于表面法线约arcsin(1.77/2.4)＝47.5度。假设在氧化硅(n是约1.47)的顶部上，氮化硅(SiN)光学波导具有n＝2.3，临界角是相对于表面法线约arcsin(1.47/2.3)＝39.7度。向经历TIR的角范围中的LED发射高效耦合到导引波导模式。详细计算展示，针对具有经最优调谐的空腔的LED，经发射光的非常大的分率(例如最多到超过85％)可耦合到这些波导模式。
图3中在平面图中展示LED阵列实施例(具有四个微型LED)。在一些实施例中，LED阵列可为图1的LED阵列芯片。LED欧姆p接点323a到d电连接到金属互连件325a到d，所述金属互连件在蓝宝石衬底的顶部上向外布线到微凸块金属化物311a到d以便(最终)将LED阵列芯片电互连到Si互连芯片。类似地，LED欧姆n接点321a到d电连接到金属互连件327a、b，所述金属互连件在蓝宝石衬底的顶部上向外布线到微凸块金属化物313a到d以便(最终)将LED阵列芯片电互连到Si互连芯片。在图3的实施例中，微凸块金属化物313a到d成对共享共用金属互连件。图3中展示共用阴极配置，但替代电配置是可能的且在本发明的范围内。举例来说，微凸块可大体如图5中所图解说明。图5是根据本发明的各方面的接合到硅互连芯片的微型LED阵列芯片的横截面图。图5展示安装于蓝宝石衬底513上的LED 511a、b。每一LED延伸到波导中，其中例如LED 511a延伸到波导515中。所述波导位于硅晶片529上，所述硅晶片具有具氧化硅层527的顶部表面。微凸块耦合硅晶片与蓝宝石衬底。蓝宝石衬底具有在与LED相同的方向上延伸的微凸块，其中例如微凸块金属化物521用于LED驱动信号且微凸块金属化物522用于共用信号。类似地，硅晶片具有微凸块，所述微凸块经定位以便能够接合到蓝宝石衬底的微凸块，其中例如微凸块金属化物523接合到微凸块521且微凸块金属化物524接合到微凸块522。
图4中在平面图中展示Si互连芯片的实施例的一部分。图4展示硅衬底上的用于LED驱动信号的微凸块金属化物417及用于共用信号的微凸块金属化物419。波导411位于硅衬底上，其中所述波导包含用于插入LED的孔413。反射金属化物415位于所述波导及孔的后端周围，以便将来自LED的光反射到波导中。波导高度及宽度的典型大小是小于10um、优选地小于5um且更优选地小于3um。微凸块宽度的典型大小是小于15um、优选地小于10um且更优选地小于5um。
在组合件中，经由适合于微凸块金属化物的选择的拾取与放置及接合工艺将LED阵列芯片接合到Si互连芯片。图5中展示LED阵列芯片接合到Si互连芯片的组合件。蓝宝石及Si芯片上的微凸块金属化物经设计及构造使得蓝宝石芯片上的微型LED插入到波导中的孔中到达适当深度以便确保向波导中进行充分光耦合。
在一些实施例中，针对InGaN/GaN LED采用标准制作技术，包含使用常规(未经图案化)蓝宝石衬底且不需要复杂衬底移除(例如，激光剥离)技术。在一些实施例中，使用标准裸片附接技术提供微型LED发射器。在一些实施例中，从LED向Si互连芯片上的波导中的光耦合是非常高效的。在一些实施例中，在LED芯片与波导之间的孔中包含LED芯片囊封剂(例如，硅酮)以进一步增加光耦合。在一些实施例中，Si互连芯片含有所有电及光学布线且还可含有驱动器电路系统来操作微型LED。
尽管已关于各种实施例论述了本发明，但应认识到，本发明包括本公开所支持的新颖及非显而易见的权利要求书。
Claims (11)
1.一种发光装置，其包括：
波导；
发光二极管，其包括：
氮化镓(GaN)n型层，
GaNp型层，
GaN有源层，其位于所述n型层与所述p型层之间，包括含有In的至少一个量子阱层，
反射层，其接近于所述p型层，
其中所述至少一个量子阱与所述反射层之间的距离经选择使得从所述有源层产生的光优先远离法向于所述有源层的表面发射成横向模式；
其中所述波导及所述有源层经定位以允许来自所述有源层的光高效耦合到所述波导中。
2.根据权利要求1所述的发光装置，其中所述反射层平行于所述有源层。
3.根据权利要求1所述的发光装置，其中所述至少一个量子阱与所述反射层之间的所述经选择距离取决于相对于由所述反射层反射的光的相移。
4.根据权利要求3所述的发光装置，其中所述反射层是金属。
5.根据权利要求4所述的发光装置，其中所述反射层是所述p型层的p侧接点。
6.根据权利要求5所述的发光装置，其中所述发光二极管的至少部分位于所述波导中的孔中。
7.根据权利要求6所述的发光装置，其中所述波导位于衬底上。
8.一种接合到硅互连芯片的微型LED阵列芯片，其包括：
第一衬底；
多个微型LED，其位于所述衬底的第一表面上；
多个第一微凸块金属化物，其位于所述衬底的所述第一表面上；
硅晶片；
多个波导，其位于所述硅晶片上，所述波导包含至少部分地接纳所述微型LED的孔；
多个第二微凸块金属化物，其位于所述硅晶片上，所述第二微凸块金属化物接合到所述第一微凸块金属化物。
9.根据权利要求8所述的接合到硅互连芯片的微型LED阵列芯片，其中所述微型LED各自包括：
n型GaN层；
p型层；
有源层，其包含位于所述n型层与所述p型层之间的至少一个量子阱(QW)；及
接点金属化物，其位于所述p型层上；
其中所述有源层与所述p型层上的所述接点金属化物之间的距离是使得所述LED内的光经导引朝向所述LED的侧边缘的距离。
10.根据权利要求10所述的接合到硅互连芯片的微型LED阵列芯片，其中所述波导包括氮化硅波导。
11.根据权利要求10所述的接合到硅互连芯片的微型LED阵列芯片，其进一步包括封盖所述波导的一端的反射金属化物。
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