CN104885235B - 用于侧发射的具有成形的生长衬底的led - Google Patents
用于侧发射的具有成形的生长衬底的led Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 66
- 230000003287 optical effect Effects 0.000 claims abstract description 49
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 34
- 239000000463 material Substances 0.000 claims abstract description 17
- 239000002245 particle Substances 0.000 claims abstract description 14
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 230000005284 excitation Effects 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 238000010276 construction Methods 0.000 claims 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 239000000843 powder Substances 0.000 description 7
- 150000002739 metals Chemical class 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000003486 chemical etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000003801 milling Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 241000338702 Cupido minimus Species 0.000 description 1
- 206010063045 Effusion Diseases 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 241001025261 Neoraja caerulea Species 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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Abstract
在相对厚的生长衬底晶片的表面中形成光学特征的阵列。LED层外延生长在生长衬底晶片的相对表面之上。LED层包括朝向生长衬底晶片发射光的有源层。所得LED晶片被单个化以形成具有生长衬底部分的单独的LED管芯,其中每一个生长衬底部分具有至少一个光学特征。光学特征将从有源层发射的光的大部分重定向成通过生长衬底部分的侧壁离开LED管芯。侧发射LED管芯安装在反射杯中并且包封有磷光体材料。LED光因而激发不叠覆LED管芯的磷光体颗粒,因此较少的磷光体光被LED管芯吸收并且效率得以改进。
Description
技术领域
本发明涉及发光二极管(LED),并且具体地涉及用于使LED具有增强的侧发射的技术。
背景技术
从LED管芯发射的所有光的绝大部分是来自与LED的安装表面相对的其顶表面。这本质上创建针点型光,因为顶表面面积在1mm2的量级上。
图1表示针对LED的常见用途,其中LED位于用于在特定方向上引导光的反射杯中,诸如用于智能电话相机中的LED闪光灯。图1是使其阳极接触件12和其阴极接触件14形成在管芯10的底表面上的典型倒装芯片LED管芯10的截面视图。接触件12和14占据LED管芯10的底表面的大面积并且是反射的。管芯10可以可选地安装在具有用于接合到封装20的电极的更鲁棒的金属垫的基板上。
接触件12和14接合到封装20中的电极16和18。封装电极16和18然后可以连接到任何其它端子,诸如印刷电路板上的金属垫、衬底、用于插入到插座中的细长插针等。
LED管芯10位于反射杯22中。反射杯22的反射壁24可以涂敷有反射金属或涂料,或者杯22自身可以由反射金属形成。
LED管芯10可以是基于GaN的并且发射蓝光。杯22填充有包括灌注在硅树脂、环氧树脂或其它包封粘合剂材料25中的磷光体粉末26的材料。磷光体粉末26可以是YAG(发射黄绿光),或者是混合物或红色和绿色磷光体粉末,或者是(多个)磷光体的任何其它类型。一些蓝光逸出,并且所得蓝光和磷光体光的混合物创建白光或任何其它颜色的光,这取决于磷光体的磷光体类型和密度。
LED管芯10在其图1的简化示例中具有n型半导体层28、有源层30和p型半导体层32。在异质结GaN LED中典型地存在许多其它层。LED层外延生长在生长衬底之上。导体34延伸通过p型半导体层32和有源层30以将阴极接触件14连接到n型半导体层28。在图1的示例中,已经移除生长衬底,诸如蓝宝石。
一般地,LED管芯10吸收撞击于其上的可见光的大约15%。在图1的示例中,来自LED管芯10的蓝色光线36激发磷光体粉末26的特定颗粒38,并且从颗粒38发射的光(例如黄光)在所有方向上发射。所发射的射线40之一被示出朝向LED管芯10返回,其中大约15%的光被LED管芯10吸收。
由于LED管芯10所发射的所有光的绝大部分通过其顶表面,并且LED管芯10上方的磷光体所发射的光的几乎一半向下朝向LED管芯10,因此存在被LED管芯10吸收的大量光,这降低了LED模块的效率。
所需要的是用于改进诸如反射杯中的LED管芯之类的LED模块的效率的低廉技术。
发明内容
在一个实施例中,通过掩蔽和蚀刻或任何其它适合的方法图案化透明生长衬底晶片,诸如蓝宝石、SiC、GaN或其它生长衬底晶片,以具有带有成角侧的光学特征,其侧向反射大部分LED光使得大部分LED光从LED的侧壁发射。光学特征与生长衬底相对形成(即在整个LED的外侧上)。由于可能存在生长于单个生长衬底晶片上的数千个LED,因此将存在形成于衬底中的数以千计的光学特征。在一个实施例中,光学特征是近似关于其相关联的LED定中心的具有顶点的凹锥或凹坑。还设想到其它光学特征形状。
生长衬底晶片优选地比常规生长衬底晶片厚得多。例如,常规生长衬底晶片典型地小于100微米(理想地,在处理期间实现期望的机械支撑的最小厚度)。为了实现光学特征(例如锥体)的期望深度并且创建用于侧壁的相对大的表面积,生长衬底晶片可以大于常规生长衬底晶片的厚度的两倍,诸如0.5mm-1mm。
光学特征的成角侧可以通过全内反射(TIR)反射LED光,或者薄反射金属层可以沉积在生长衬底晶片之上以涂敷光学特征的外表面。生长衬底晶片的蚀刻优选地在生长LED半导体层之前执行以避免对LED的损坏。将假定LED是发射蓝光或紫外光的基于GaN的LED。在LED形成于生长衬底晶片之上之后,晶片被单个化以形成单独的侧发射LED管芯。
因此,由LED管芯的有源层发射的所有光的大部分将被光学特征侧向反射。
当所得LED管芯安装在反射杯中,并且该杯填充有磷光体材料时,通过蓝光激发的磷光体颗粒将不在LED管芯之上,而是将在杯的反射表面之上。因此,当颗粒在所有方向上发射光时,较小百分比的磷光体光将撞击在有源层上并且被LED吸收,并且较大百分比将被杯的反射壁表面向上反射。这大幅增加LED模块的光输出并且以非常少的附加成本改进效率。
本发明不限于倒装芯片LED,并且可以使用垂直LED或具有顶接触件的LED而不是倒装芯片LED。
通过将分离的侧发射透镜附连在LED管芯的顶部之上来创建侧发射LED是已知的,诸如用于背光源中的使用。然而,本技术消除了这样的侧发射透镜。由于没有使用分离的侧发射透镜,因此避免了用于透镜的成本和额外的处理步骤,并且LED模块可以制作得更浅。使用生长衬底中的光学特征反射LED光比使用侧发射透镜在光学上还更加高效。
公开了各种其它实施例。
附图说明
图1是安装在填充有磷光体材料的反射杯中的现有技术蓝色或UV倒装芯片LED管芯的截面简化视图。
图2是相对厚的透明生长衬底晶片的小部分的截面视图。
图3图示了在粗糙化底表面以改进光提取之后并且在形成顶表面以具有使LED成为侧发射LED的光学特征之后图2的晶片。
图4是形成在图3的生长衬底晶片上的两个简化LED的截面视图。
图5是安装在填充有磷光体材料的反射杯中的经单个化的LED管芯的截面视图,其中磷光体颗粒远离LED管芯的顶表面发射光以减少被LED管芯吸收的量。
图6图示了图5的结构但是添加有LED基板。
图7是LED管芯的另一实施例的截面视图,其中形成在生长衬底中的光学特征具有碗或抛物面形状。
图8是LED管芯的另一实施例的截面视图,其中形成在生长衬底中的光学特征具有圆顶形状以用于在LED管芯的顶表面之上将光折射离开。
相同或类似的元件利用相同标号来标记。
具体实施方式
本发明技术可以适用于许多类型的不同LED,并且将描述LED结构的一个示例以说明本发明的应用。在示例中,LED是发射蓝光的基于GaN的LED。用于基于GaN的LED的适合的透明生长衬底典型地为蓝宝石、SiC或GaN。
图2图示了蓝宝石生长衬底晶片42。这样的晶片在2-6英寸的直径之间是可得到的,尽管在本发明的范围内预期到并包括更大的晶片。由于典型的LED仅大约1mm2,因此数千个LED可以形成在单个晶片42上。这样的晶片的常规厚度小于100微米,或者是制造商所认为的用于在处理期间对LED层的机械支撑所需的最小厚度。然而,在本过程中,使用厚得多的晶片42来容纳侧发射光学特征的深度并且创建大侧壁表面积。在一个实施例中,晶片42的厚度大约为0.3mm-1mm,并且优选地大于0.5mm。
晶片42的底表面43(GaN生长表面)被粗糙化以通过减少全内反射(TIR)来增加光提取。这样的粗糙化是常规的并且可以通过碾磨、化学蚀刻、等离子体蚀刻等执行。
在一个实施例中,使用金属(Ni)掩模或光致抗蚀剂掩模来掩蔽晶片42的顶表面,并且对其进行化学蚀刻以形成用于要形成的每一个LED一个的数以千计的光学特征44。在一个实施例中,利用Ni掩模图案化晶片42表面,并且使用基于氯的感应耦合等离子体RIE过程来形成锥体光学特征。Ni掩模的厚度创建每一个掩模开口的边缘附近的阴影效果,使得蚀刻速率朝向Ni开口的边缘逐渐缩小。蓝宝石中的蚀刻特征是已知的。激光器或碾磨工具也可以用于蚀刻晶片42。在图3中示出锥体光学特征44的截面,尽管可以形成许多其它适合的特征。图6和7图示了一些其它光学特征。
光学特征44的深度可以超过针对45度角锥体的经单个化的LED的宽度的一半以实现宽TIR角。例如,锥体的深度可以大约为0.5mm。光学特征的其它形状可以制作得更浅并且利用更薄的晶片42。
在一个实施例中,通过光学特征44的反射是通过TIR。在另一实施例中,诸如银或铝之类的反射金属的薄层沉积(例如通过溅射)在光学特征44之上。反射金属可以仅几微米厚。在这样的情形中,生长衬底晶片42可以更薄。介电层还可以形成为光学特征44之上的布拉格反射体以充当镜体。
如图4中所示,然后可以通过使用常规技术在粗糙化的表面43之上外延生长LED半导体层。这样的基于GaN的LED可以具有与关于图1所述的相同的层28,30和32。然后形成金属导体34、阳极接触件12和阴极接触件14以形成倒装芯片LED。
所得LED晶片然后通过例如激光蚀刻或划片接着断裂来单个化。在图4中示出单个化线48,包括切口。单个化LED晶片的许多适合的方式是已知的。
如图5中所示,所得LED管芯50安装在反射杯20中,如关于图1所描述的。裸LED管芯50可以可选地在安装于杯20中之前安装在图6中所示的鲁棒的基板51上。基板51充当热扩散器并且提供大得多且鲁棒的底接触件52以用于附接到杯电极16和18。然而,这样的基板51向模块添加了高度和成本。
杯20然后填充有包括灌注在透明或半透明包封粘合剂材料25(诸如硅树脂或环氧树脂)中的磷光体粉末26的材料。材料25然后被固化。(多个)磷光体粉末的(多个)类型、磷光体粉末26的密度以及磷光体层的厚度确定由LED光和磷光体光的组合所发射的总体颜色。
如图5中所示,光学特征44将使从有源层30发射的LED光的大多数从LED管芯50的相对大侧壁反射出。因而,LED管芯的所发射的光的大多数将激发处于反射杯表面之上而不是LED管芯50之上的磷光体颗粒。当这些颗粒在所有方向上发射光时,所发射的光的绝大部分将离开模块的顶表面向上发射,或者通过反射杯向上反射。仅所发射的光的小百分比将撞击LED管芯50的有源层30,其中大约15%的光将被有源层30吸收。由有源层30发射的光线46被示出由光学特征44反射并且激发磷光体颗粒47,其中颗粒47发射由杯的反射壁24向上反射的光线48。
此外,如果晶片42的顶部涂敷有反射膜,诸如反射金属,则由磷光体颗粒发射的撞击在反射膜上的任何光将被重定向远离LED管芯50并且不被吸收。这进一步增加图5的结构的效率。在图5中,这通过激发磷光体颗粒47A的光线46A来图示,磷光体颗粒47A发射反射离开晶片42上的反射膜的光线48A。
因而,相比于图1的常规结构,存在有源层30对光的吸收的大幅减少,并且以非常少的附加成本改进了效率。
侧发射LED管芯50通过更均匀地将光扩散到光导中而对背光照明液晶显示器(LCD)也是有用的,其中光导具有棱镜或粗糙化表面以用于朝向LCD屏幕重定向光。由于侧发射LED管芯非常浅,因此光导可以非常薄。LED管芯可以安装在光导中的孔中或沿着其边缘。
除锥体之外的许多其它光学特征可以形成在生长衬底晶片中。例如,可以使用具有顶点和对称的渐近或抛物面形状的凹坑。
图7图示了光学特征可以如何为碗形状56,其相比锥体形状可能更易于形成。反射可以通过TIR,或者反射金属可以沉积在碗中。示出经反射的光线57。
图8图示了光学特征可以如何为凸圆顶形状58。在这样的情形中,LED光在LED顶表面之上折射离开。示出经折射的光线59。
在另一实施例中,LED管芯50不是倒装芯片。
在另一实施例中,反射杯中的波长转换材料除磷光体之外,诸如量子点材料。
虽然已经示出和描述了本发明的特定实施例,但是对本领域技术人员而言将显而易见的是,可以做出改变和修改而不脱离于处于其更宽方面中的本发明,并且因此所附权利要求在其范围内涵盖如落在本发明的真实精神和范围内的所有这样的改变和修改。
Claims (15)
1.一种发光结构,包括:
LED管芯,包括:
具有第一表面和与第一表面相对的第二表面的生长衬底(42);以及
外延生长在生长衬底的第一表面之上的半导体层,包括发射光的有源层(30),有源层具有面向生长衬底的第三表面,其中生长衬底的第二表面在其中形成至少一个光学特征(44),所述至少一个光学特征将从有源层的第三表面发射的至少光(46)的部分重定向成通过生长衬底的侧壁离开LED管芯;
其中LED管芯是具有覆盖LED管芯的底表面的显著部分的反射阳极和阴极电极(12,14)的倒装芯片,其中阳极和阴极电极被配置成在没有线的情况下直接耦合到支撑结构(20)的电极(16,18),使得生长衬底的侧壁发射由有源层生成的光的大部分,
其中形成在生长衬底中的光学特征背离支撑结构,光学特征具有第四表面,所述第四表面背离生长衬底并且至少部分地被反射层覆盖,使得反射层减少经由光学特征进入LED管芯的光的量。
2.权利要求1的发光结构,其中至少一个光学特征覆盖有反射层,所述反射层将从有源层的第三表面发射的光的部分反射成通过生长衬底的侧壁离开LED管芯。
3.权利要求1的发光结构,其中至少一个光学特征具有成角表面,所述成角表面朝向生长衬底的侧壁重定向光。
4.权利要求1的发光结构,其中至少一个光学特征包括形成在生长衬底中的凹形的、基本上锥体形状。
5.权利要求1的发光结构,其中至少一个光学特征包括形成在生长衬底中的凹形圆形形状。
6.权利要求1的发光结构,其中至少一个光学特征包括朝向生长衬底的侧壁折射光的凸形圆形形状。
7.权利要求1的发光结构,其中生长衬底包括蓝宝石。
8.权利要求1的发光结构,其中生长衬底大于200微米厚。
9.权利要求1的发光结构,其中生长衬底大于500微米厚。
10.权利要求1的发光结构,还包括:
在其中安装LED管芯的反射杯;以及
杯中的覆盖LED管芯的顶部和侧面的波长转换材料。
11.权利要求10的发光结构,其中波长转换材料包括灌注在粘合剂材料中的磷光体颗粒,并且其中从生长衬底的侧壁发射的至少光的部分激发不叠覆LED管芯的磷光体颗粒。
12.权利要求1的发光结构,还包括覆盖LED管芯的顶部和侧面的磷光体材料,其中LED管芯发射蓝光并且磷光体材料发射与蓝光组合的磷光体光。
13.权利要求1的发光结构,其中至少一个光学特征将从有源层的第三表面发射的光的大部分重定向成通过生长衬底的侧壁离开LED管芯。
14.一种形成发光结构的方法,包括:
提供具有第一表面和与第一表面相对的第二表面的生长衬底晶片(42);
形成生长衬底晶片的第二表面中的多个光学特征(44);
在形成多个光学特征之后,在生长衬底晶片的第一表面之上生长外延层以形成LED,LED具有发射光的有源层(30),有源层具有面向生长衬底晶片的第三表面;以及
单个化生长衬底晶片以形成具有生长衬底部分的单独的LED管芯,其中每一个生长衬底部分具有至少一个光学特征,至少一个光学特征将从有源层的第三表面发射的光的大部分重定向成通过生长衬底部分的侧壁离开LED管芯,
其中每一个LED管芯是具有覆盖LED管芯的底表面的显著部分的反射阳极和阴极电极(12,14)的倒装芯片,其中阳极和阴极电极被配置成在没有线的情况下直接耦合到支撑结构(20)的电极(16,18),使得生长衬底的侧壁发射由有源层生成的光的大部分,并且
其中形成在生长衬底中的光学特征背离支撑结构,光学特征具有第四表面,所述第四表面背离生长衬底并且至少部分地被反射层覆盖,使得反射层减少经由光学特征进入LED管芯的光的量。
15.权利要求14的形成发光结构的方法,还包括:
将LED管芯之一安装在反射杯中;以及
在杯中沉积覆盖LED管芯的顶部和侧面的波长转换材料。
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US201361750914P | 2013-01-10 | 2013-01-10 | |
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Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013121708A1 (ja) * | 2012-02-15 | 2013-08-22 | パナソニック株式会社 | 発光装置およびその製造方法 |
EP2981379B1 (en) * | 2013-04-05 | 2019-05-15 | Tenneco Inc. | Method of making a piston body using additive manufacturing techniques |
WO2015076591A1 (ko) * | 2013-11-21 | 2015-05-28 | 주식회사 루멘스 | 발광 소자 패키지, 백라이트 유닛, 조명 장치 및 발광 소자 패키지의 제작 방법 |
KR101873132B1 (ko) * | 2013-11-22 | 2018-06-29 | 헵타곤 마이크로 옵틱스 피티이. 리미티드 | 컴팩트 광전자 모듈들 |
TWI757315B (zh) * | 2017-07-28 | 2022-03-11 | 晶元光電股份有限公司 | 發光裝置以及其製造方法 |
KR102601620B1 (ko) * | 2017-08-03 | 2023-11-15 | 크리엘이디, 인크. | 고밀도 픽셀화된 led 칩 및 칩 어레이 장치, 그리고 그 제조 방법 |
DE102017129623B4 (de) | 2017-12-12 | 2024-03-28 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Licht emittierendes Halbleiterbauelement |
US10862002B2 (en) | 2018-04-27 | 2020-12-08 | Facebook Technologies, Llc | LED surface modification with ultraviolet laser |
US10811581B2 (en) | 2018-06-15 | 2020-10-20 | Nichia Corporation | Method of manufacturing semiconductor device |
CN109638137A (zh) * | 2018-11-07 | 2019-04-16 | 惠州市华星光电技术有限公司 | 倒装led芯片及直下式背光模组 |
US11681090B2 (en) * | 2019-05-30 | 2023-06-20 | Nichia Corporation | Light emitting module and method of manufacturing same |
JP6852822B2 (ja) * | 2019-05-30 | 2021-03-31 | 日亜化学工業株式会社 | 発光モジュール及びその製造方法 |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61127186A (ja) * | 1984-11-22 | 1986-06-14 | Sharp Corp | 逆円錐型発光素子ランプ |
JPH03227078A (ja) * | 1990-01-31 | 1991-10-08 | Nec Corp | 発光ダイオード |
JPH07263743A (ja) * | 1994-03-18 | 1995-10-13 | Hitachi Cable Ltd | 発光ダイオード |
US5986754A (en) * | 1997-12-08 | 1999-11-16 | Lifescan, Inc. | Medical diagnostic apparatus using a Fresnel reflector |
JPH11330565A (ja) * | 1998-05-15 | 1999-11-30 | Sanyo Electric Co Ltd | 発光装置 |
CN100521257C (zh) * | 2000-02-15 | 2009-07-29 | 奥斯兰姆奥普托半导体有限责任公司 | 发射辐射半导体器件及其制造方法 |
AU2002217845A1 (en) * | 2000-11-16 | 2002-05-27 | Emcore Corporation | Microelectronic package having improved light extraction |
EP1225643A1 (en) * | 2001-01-23 | 2002-07-24 | Interuniversitair Microelektronica Centrum Vzw | High efficiency unilateral light emitting device and method for fabricating such device |
US6515308B1 (en) * | 2001-12-21 | 2003-02-04 | Xerox Corporation | Nitride-based VCSEL or light emitting diode with p-n tunnel junction current injection |
JP2004056088A (ja) * | 2002-05-31 | 2004-02-19 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子 |
JP2004128057A (ja) * | 2002-09-30 | 2004-04-22 | Fuji Photo Film Co Ltd | 発光装置およびその製造方法 |
JP4114557B2 (ja) * | 2003-06-25 | 2008-07-09 | 松下電工株式会社 | 発光装置 |
JP4288481B2 (ja) * | 2003-10-02 | 2009-07-01 | シチズン電子株式会社 | 発光ダイオード |
JP4211559B2 (ja) * | 2003-10-08 | 2009-01-21 | セイコーエプソン株式会社 | 光源装置及びプロジェクタ |
TW200419832A (en) * | 2004-04-16 | 2004-10-01 | Uni Light Technology Inc | Structure for increasing the light-emitting efficiency of a light-emitting device |
US7423297B2 (en) * | 2006-05-03 | 2008-09-09 | 3M Innovative Properties Company | LED extractor composed of high index glass |
US8080828B2 (en) * | 2006-06-09 | 2011-12-20 | Philips Lumileds Lighting Company, Llc | Low profile side emitting LED with window layer and phosphor layer |
US7626210B2 (en) * | 2006-06-09 | 2009-12-01 | Philips Lumileds Lighting Company, Llc | Low profile side emitting LED |
US8158990B2 (en) * | 2006-10-05 | 2012-04-17 | Mitsubishi Chemical Corporation | Light emitting device using GaN LED chip |
JP4920497B2 (ja) * | 2007-05-29 | 2012-04-18 | 株式会社東芝 | 光半導体装置 |
JP2009032958A (ja) * | 2007-07-27 | 2009-02-12 | Kyocera Corp | 発光素子及び照明装置 |
US7652301B2 (en) * | 2007-08-16 | 2010-01-26 | Philips Lumileds Lighting Company, Llc | Optical element coupled to low profile side emitting LED |
KR20100093570A (ko) * | 2007-11-20 | 2010-08-25 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | 파장 변환을 갖는 측면 발광 장치 |
WO2010056083A2 (ko) * | 2008-11-14 | 2010-05-20 | 삼성엘이디 주식회사 | 반도체 발광소자 |
US8704257B2 (en) * | 2009-03-31 | 2014-04-22 | Epistar Corporation | Light-emitting element and the manufacturing method thereof |
US8653546B2 (en) * | 2009-10-06 | 2014-02-18 | Epistar Corporation | Light-emitting device having a ramp |
TWI394298B (zh) * | 2010-01-29 | 2013-04-21 | Advanced Optoelectronic Tech | 半導體發光元件封裝結構 |
CN102623600A (zh) * | 2011-01-31 | 2012-08-01 | 隆达电子股份有限公司 | 半导体发光结构 |
US9263636B2 (en) * | 2011-05-04 | 2016-02-16 | Cree, Inc. | Light-emitting diode (LED) for achieving an asymmetric light output |
-
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- 2014-01-06 KR KR1020157021472A patent/KR102146595B1/ko active IP Right Grant
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Publication number | Publication date |
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