JP5118688B2 - 半導体発光素子 - Google Patents
半導体発光素子 Download PDFInfo
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- JP5118688B2 JP5118688B2 JP2009299132A JP2009299132A JP5118688B2 JP 5118688 B2 JP5118688 B2 JP 5118688B2 JP 2009299132 A JP2009299132 A JP 2009299132A JP 2009299132 A JP2009299132 A JP 2009299132A JP 5118688 B2 JP5118688 B2 JP 5118688B2
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- layer
- light emitting
- emitting device
- semiconductor layer
- pattern
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- 239000004065 semiconductor Substances 0.000 title claims description 196
- 150000001875 compounds Chemical class 0.000 claims description 21
- 239000010410 layer Substances 0.000 description 213
- 238000000034 method Methods 0.000 description 24
- 239000000758 substrate Substances 0.000 description 22
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 20
- 239000000463 material Substances 0.000 description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 14
- 239000002019 doping agent Substances 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 11
- 230000002093 peripheral effect Effects 0.000 description 11
- 239000010931 gold Substances 0.000 description 10
- 239000010409 thin film Substances 0.000 description 10
- 239000011787 zinc oxide Substances 0.000 description 10
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 8
- 229910052733 gallium Inorganic materials 0.000 description 8
- 229910052738 indium Inorganic materials 0.000 description 8
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 description 8
- 229910052759 nickel Inorganic materials 0.000 description 8
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 8
- 229910002704 AlGaN Inorganic materials 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 6
- 229910019897 RuOx Inorganic materials 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910005540 GaP Inorganic materials 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 229910010413 TiO 2 Inorganic materials 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 229910052755 nonmetal Inorganic materials 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- 239000011135 tin Substances 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- -1 GZO Chemical compound 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 3
- DZLPZFLXRVRDAE-UHFFFAOYSA-N [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] Chemical compound [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] DZLPZFLXRVRDAE-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 229910052790 beryllium Inorganic materials 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910021476 group 6 element Inorganic materials 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910003465 moissanite Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052789 astatine Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Led Device Packages (AREA)
Description
Claims (11)
- 各々が少なくとも一部がラウンディング処理された側面を持つ、第1導電型半導体層と、活性層と、第2導電型半導体層と、を有する化合物半導体層を含む発光構造物と、
前記第1導電型半導体層の上に位置する第1電極部と、
前記第2導電型半導体層の下に位置する第2電極層と、を備え、
前記発光構造物は、柱形状であり、
前記第2導電型半導体層は、前記第2電極層と接しており、かつ、垂直方向に重複することを特徴とする半導体発光素子。 - 前記第2電極層の下に導電性支持部材を含むことを特徴とする請求項1に記載の半導体発光素子。
- 前記第2電極層は、前記第2導電型半導体層の下から前記導電性支持部材の側面に向かって突出していることを特徴とする請求項2に記載の半導体発光素子。
- 前記第1電極部は、
前記第1導電型半導体層の上に位置する電極パッドと、
前記電極パッドから少なくとも2つの方向に分岐された第1パターンと、
前記第1パターンの端部に連結された第2パターンと、
を含むことを特徴とする請求項3に記載の半導体発光素子。 - 前記第2電極層と前記第2導電型半導体層との間の周りにチャンネル層を含むことを特徴とする請求項2又は4に記載の半導体発光素子。
- 前記第2電極層と前記第2導電型半導体層との間に形成されるオーミック接触層を含むことを特徴とする請求項2又は5に記載の半導体発光素子。
- 前記第1パターンの一部と前記第1パターンの他の部分とは、前記電極パッドに対して対称であることを特徴とする請求項4又は6に記載の半導体発光素子。
- 前記第2パターンは、前記第1導電型半導体層のラウンディング処理された側面に対応するラウンディング部を有することを特徴とする請求項4又は7に記載の半導体発光素子。
- 前記第1導電型半導体層の側面から前記第2パターンまでの距離は一定であることを特徴とする請求項4又は8に記載の半導体発光素子。
- 前記第2パターンは、閉ループ形状であることを特徴とする請求項4又は9に記載の半導体発光素子。
- 前記第2導電型半導体層の側面は、前記第2電極層の側面と平行であることを特徴とする請求項3又は10に記載の半導体発光素子。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2008-0135989 | 2008-12-29 | ||
KR1020080135989A KR101064081B1 (ko) | 2008-12-29 | 2008-12-29 | 반도체 발광소자 및 그 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010157737A JP2010157737A (ja) | 2010-07-15 |
JP5118688B2 true JP5118688B2 (ja) | 2013-01-16 |
Family
ID=41820744
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009299132A Active JP5118688B2 (ja) | 2008-12-29 | 2009-12-29 | 半導体発光素子 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8853719B2 (ja) |
EP (1) | EP2214217A1 (ja) |
JP (1) | JP5118688B2 (ja) |
KR (1) | KR101064081B1 (ja) |
CN (1) | CN101771125B (ja) |
TW (1) | TWI435474B (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110272730A1 (en) * | 2010-05-06 | 2011-11-10 | Theleds Co., Ltd. | Light emitting device |
KR101000311B1 (ko) * | 2010-07-27 | 2010-12-13 | (주)더리즈 | 반도체 발광소자 및 그 제조방법 |
US8283652B2 (en) * | 2010-07-28 | 2012-10-09 | SemiLEDs Optoelectronics Co., Ltd. | Vertical light emitting diode (VLED) die having electrode frame and method of fabrication |
US8723160B2 (en) * | 2010-07-28 | 2014-05-13 | SemiLEDs Optoelectronics Co., Ltd. | Light emitting diode (LED) die having peripheral electrode frame and method of fabrication |
KR101735672B1 (ko) | 2010-10-29 | 2017-05-15 | 엘지이노텍 주식회사 | 발광 소자 및 발광 소자 패키지 |
US8476649B2 (en) | 2010-12-16 | 2013-07-02 | Micron Technology, Inc. | Solid state lighting devices with accessible electrodes and methods of manufacturing |
CN103050599A (zh) * | 2011-10-17 | 2013-04-17 | 大连美明外延片科技有限公司 | 一种具有外环电极的发光二极管及其制造方法 |
US20130181227A1 (en) * | 2012-01-12 | 2013-07-18 | King Dragon International Inc. | LED Package with Slanting Structure and Method of the Same |
JP5723431B2 (ja) * | 2013-10-24 | 2015-05-27 | ビービーエスエイ リミテッドBBSA Limited | Iii族窒化物半導体縦型構造ledチップ |
KR102200074B1 (ko) * | 2014-08-07 | 2021-01-11 | 엘지이노텍 주식회사 | 발광소자 및 조명시스템 |
US9793436B2 (en) | 2015-01-16 | 2017-10-17 | Epistar Corporation | Semiconductor light-emitting device |
KR101974584B1 (ko) * | 2015-02-04 | 2019-05-02 | 에피스타 코포레이션 | 반도체 발광소자 |
US10636837B2 (en) * | 2017-01-26 | 2020-04-28 | International Business Machines Corporation | Solution deposited magnetically guided chiplet displacement |
KR102211179B1 (ko) * | 2019-04-25 | 2021-02-02 | 에피스타 코포레이션 | 반도체 발광소자 |
CN110970535A (zh) * | 2019-11-07 | 2020-04-07 | 河源市众拓光电科技有限公司 | 一种圆形垂直结构led芯片及其制备方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
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DE3041228A1 (de) * | 1980-11-03 | 1982-05-13 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Leuchtdiode vom mesatyp |
JPS616880A (ja) * | 1984-06-20 | 1986-01-13 | Rohm Co Ltd | 発光半導体素子およびその製造方法 |
DE19947030A1 (de) * | 1999-09-30 | 2001-04-19 | Osram Opto Semiconductors Gmbh | Oberflächenstrukturierte Lichtemissionsdiode mit verbesserter Stromeinkopplung |
TW544953B (en) * | 2002-06-03 | 2003-08-01 | Opto Tech Corp | Light emitting diode capable of increasing the light emitting efficiency |
AU2003252359A1 (en) * | 2002-08-01 | 2004-02-23 | Nichia Corporation | Semiconductor light-emitting device, method for manufacturing same and light-emitting apparatus using same |
JP3912219B2 (ja) | 2002-08-01 | 2007-05-09 | 日亜化学工業株式会社 | 窒化物半導体発光素子 |
GB0302580D0 (en) * | 2003-02-05 | 2003-03-12 | Univ Strathclyde | MICRO LEDs |
KR100613272B1 (ko) * | 2003-12-30 | 2006-08-18 | 주식회사 이츠웰 | 수직형 전극 구조를 가지는 발광 다이오드 및 그 제조 방법 |
JP2005276899A (ja) * | 2004-03-23 | 2005-10-06 | Shin Etsu Handotai Co Ltd | 発光素子 |
KR100667508B1 (ko) * | 2004-11-08 | 2007-01-10 | 엘지전자 주식회사 | 발광 소자 및 그의 제조방법 |
JP4992282B2 (ja) * | 2005-06-10 | 2012-08-08 | ソニー株式会社 | 発光ダイオード、発光ダイオードの製造方法、発光ダイオードバックライト、発光ダイオード照明装置、発光ダイオードディスプレイおよび電子機器 |
JP2007123517A (ja) * | 2005-10-27 | 2007-05-17 | Toshiba Corp | 半導体発光素子及び半導体発光装置 |
WO2007099855A1 (ja) * | 2006-02-28 | 2007-09-07 | Rohm Co., Ltd. | 半導体発光素子 |
JP2007258338A (ja) * | 2006-03-22 | 2007-10-04 | Rohm Co Ltd | 半導体発光素子 |
CN101485000B (zh) * | 2006-06-23 | 2012-01-11 | Lg电子株式会社 | 具有垂直拓扑的发光二极管及其制造方法 |
TWI475716B (zh) * | 2007-03-19 | 2015-03-01 | Epistar Corp | 光電元件 |
-
2008
- 2008-12-29 KR KR1020080135989A patent/KR101064081B1/ko active IP Right Grant
-
2009
- 2009-12-24 EP EP09180745A patent/EP2214217A1/en not_active Ceased
- 2009-12-28 US US12/647,827 patent/US8853719B2/en active Active
- 2009-12-29 JP JP2009299132A patent/JP5118688B2/ja active Active
- 2009-12-29 CN CN200910258875.0A patent/CN101771125B/zh not_active Expired - Fee Related
- 2009-12-29 TW TW098145507A patent/TWI435474B/zh active
Also Published As
Publication number | Publication date |
---|---|
EP2214217A1 (en) | 2010-08-04 |
TW201025685A (en) | 2010-07-01 |
CN101771125A (zh) | 2010-07-07 |
TWI435474B (zh) | 2014-04-21 |
US20100163904A1 (en) | 2010-07-01 |
US8853719B2 (en) | 2014-10-07 |
KR20100077910A (ko) | 2010-07-08 |
KR101064081B1 (ko) | 2011-09-08 |
CN101771125B (zh) | 2014-10-29 |
JP2010157737A (ja) | 2010-07-15 |
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