JP2016224439A - フレキシブル表示装置及びその製造方法 - Google Patents
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
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- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
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- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0296—Conductive pattern lay-out details not covered by sub groups H05K1/02 - H05K1/0295
- H05K1/0298—Multilayer circuits
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- H10K59/40—OLEDs integrated with touch screens
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/13629—Multilayer wirings
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/136295—Materials; Compositions; Manufacture processes
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/36—Micro- or nanomaterials
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04102—Flexible digitiser, i.e. constructional details for allowing the whole digitising part of a device to be flexed or rolled like a sheet of paper
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/032—Materials
- H05K2201/0326—Inorganic, non-metallic conductor, e.g. indium-tin oxide [ITO]
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Abstract
Description
(実施例1)
PC(PolyCarbonate)基板上にAlを約50nm厚さにスパッタリングして導電パターンを形成した。導電パターン上に絶縁層を形成した。
Alを約100nm厚さにして導電パターンを形成することを除ければ、実施例1と同様に遂行した。
PC(PolyCarbonate)基板上にAlを約60℃で約2分の間にスパッタリングして50nm厚さの導電パターン層を形成する工程を6回遂行して、導電パターン層を6個含む導電パターンを形成した。
実施例3で約60℃ではなく約20℃でスパッタリングを遂行したことを除ければ、実施例3と同様に遂行した。
PC(PolyCarbonate)基板上にCuをスパッタリングして50nm厚さの導電パターン層を形成する工程を6回遂行して、導電パターン層を6個含む導電パターンを形成した。
PC(PolyCarbonate)基板上にAlをスパッタリングして150nm厚さの第1Al導電パターン層を形成し、第1Al導電パターン層上にTiをスパッタリングして5nm厚さのTi導電パターン層を形成し、Ti導電パターン層上にAlをスパッタリングして150nm厚さの第2Al導電パターン層を形成した。
PC(PolyCarbonate)基板上にAlをスパッタリングして100nm厚さの第1Al導電パターン層を形成し、第1Al導電パターン層上にCuをスパッタリングして100nm厚さのCu導電パターン層を形成し、Cu導電パターン層上にAlをスパッタリングして100nm厚さの第2Al導電パターン層を形成した。
PC(PolyCarbonate)基板上にTiをスパッタリングして20nm厚さのTi導電パターン層を形成し、Ti導電パターン層上にCuをスパッタリングして150nm厚さのCu導電パターン層を形成し、Cu導電パターン層上にAlをスパッタリングして150nm厚さのAl導電パターン層を形成した。
PC(PolyCarbonate)基板上にAlを約60℃で約2分の間にスパッタリングして300nm厚さに導電パターンを形成することを除ければ、実施例1と同様に遂行した。
比較例1で約60℃ではなく約20℃でスパッタリングを遂行したことを除ければ、比較例1と同様に遂行した。
PC(PolyCarbonate)基板上にAlを200nm厚さにして導電パターンを形成することを除ければ、実施例1と同様に遂行した。
1)グレインサイズ測定
実施例1乃至3、実施例5乃至8、比較例1及び2の各々の導電パターンの断面をSEM(Scanning Electron Microscope)に撮影して、グレインサイズを測定した。SEM写真はFEI社のHelios450を使用して撮影した。測定されたSEMイメージを図11A、図11Bに図示し、グレインサイズを下記の表1に示した。また、実施例3及び4、比較例1及び2の断面を撮影して図12に示した。
実施例1及び2、比較例1及び2の各々の導電パターンの断面をSEMで撮影し、1平方マイクロメータ(μm2)の単位面積内にグレイン数を測定した。グレイン数を下記の表2に示した。
実施例1乃至8、比較例1及び3の各々の内側ベンディングによる断線可否、外側ベンディングによる断線の可否を確認した。比較例1及び3の各々の内側ベンディングによる断線の可否を図13に示した。
実施例1、2及び5、比較例1及び3の各々の内側ベンディングによる抵抗変化率、外側ベンディングによる抵抗変化率を測定した。内側ベンディングによる抵抗変化率を表3に示し、外側ベンディングによる抵抗変化率を表4に示した。
1)グレインサイズ測定
図11A、図11B、及び図12と表1を参照すると、実施例1乃至8の各々のグレインサイズが、比較例1及び2のグレインサイズより小さいことを確認した。
表2で確認することができるように実施例1及び2のグレイン数が比較例1及び3のグレイン数より多いことを確認した。
実施例1乃至8では内側ベンディング、外側ベンディングによる断線が発生しなかったが、比較例1及び3では図13で確認することができるように内側ベンディング、外側ベンディングで全て断線が発生した。
表3及び表4を参照すると、実施例1、2及び5では内側ベンディングによる抵抗変化率、外側ベンディングによる抵抗変化率が概ね発生しなかったが、比較例1及び3では内側ベンディングによる抵抗変化率、外側ベンディングによる抵抗変化率が大きいことを確認した。
FB フレキシブル基板
CP 導電パターン
DP 表示パネル
TSP タッチスクリーンパネル
Claims (10)
- ベンディング部を含むフレキシブル(flexible)基板と、
少なくとも一部が前記ベンディング部上に提供され、複数のグレイン(grain)を有する導電パターンと、を含み、
前記グレインは、
10nm乃至100nmのグレインサイズ(grain size)を有するフレキシブル表示装置。 - 前記導電パターンは、
1平方マイクロメータ(μm2)の単位面積内で、
200乃至1200個のグレインを含む請求項1に記載のフレキシブル表示装置。 - 前記導電パターンは、
金属、前記金属の合金及び透明導電性酸化物(Transparent conducting oxide)の中で少なくとも1つを含む請求項1に記載のフレキシブル表示装置。 - 前記金属は、
Al、Cu、Ti、Mo、Ag、Mg、Pt、Pd、Au、Ni、Nd、Ir、及びCrの中で少なくとも1つを含む請求項3に記載のフレキシブル表示装置。 - 前記透明導電性酸化物は、
ITO(indium tin oxide)、IZO(indium zinc oxide)、ZnO(zinc oxide)、及びITZO(indium tin zinc oxide)の中で少なくとも1つを含む請求項3に記載のフレキシブル表示装置。 - 前記導電パターンは、
各々が10nm乃至100nmのグレインサイズを有する複数の導電パターン層を含む請求項1に記載のフレキシブル表示装置。 - 前記導電パターン層の各々は、
10nm乃至150nmの厚さを有する請求項6に記載のフレキシブル表示装置。 - 前記導電パターン層の各々は、
互いに同一の物質で構成される請求項6に記載のフレキシブル表示装置。 - 前記導電パターンは、
第1導電パターン層と、
前記第1導電パターン層上に提供される第1空気層と、
前記第1空気層上に提供される第2導電パターン層と、
前記第2導電パターン層上に提供される第2空気層と、
前記第2空気層上に提供される第3導電パターン層と、を含む請求項6に記載のフレキシブル表示装置。 - 前記第1導電パターン層及び前記第3導電パターン層の各々は10nm以上150nm以下の厚さを有し、
前記第2導電パターン層は5nm以上10nm未満の厚さを有する請求項9に記載のフレキシブル表示装置。
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Cited By (1)
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US10401991B2 (en) | 2016-03-17 | 2019-09-03 | Samsung Display Co., Ltd. | Display device and method for manufacturing same |
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KR102470044B1 (ko) | 2016-05-13 | 2022-11-24 | 삼성디스플레이 주식회사 | 플렉서블 표시 장치 및 이의 제조 방법 |
KR102343794B1 (ko) * | 2017-05-24 | 2021-12-28 | 삼성디스플레이 주식회사 | 표시 장치 |
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Also Published As
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TWI737611B (zh) | 2021-09-01 |
CN106206653A (zh) | 2016-12-07 |
KR20160141357A (ko) | 2016-12-08 |
JP2022028733A (ja) | 2022-02-16 |
TW201710861A (zh) | 2017-03-16 |
CN106206653B (zh) | 2022-05-13 |
KR102402759B1 (ko) | 2022-05-31 |
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