JP2016219451A - クリーニング方法及びプラズマ処理方法 - Google Patents
クリーニング方法及びプラズマ処理方法 Download PDFInfo
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- JP2016219451A JP2016219451A JP2015098867A JP2015098867A JP2016219451A JP 2016219451 A JP2016219451 A JP 2016219451A JP 2015098867 A JP2015098867 A JP 2015098867A JP 2015098867 A JP2015098867 A JP 2015098867A JP 2016219451 A JP2016219451 A JP 2016219451A
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- Prior art keywords
- gas
- cleaning
- cleaning step
- metal
- etching
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 75
- 238000003672 processing method Methods 0.000 title claims description 3
- 239000007789 gas Substances 0.000 claims abstract description 144
- 238000005530 etching Methods 0.000 claims abstract description 54
- 229910052751 metal Inorganic materials 0.000 claims abstract description 51
- 239000002184 metal Substances 0.000 claims abstract description 51
- 230000008569 process Effects 0.000 claims abstract description 41
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- 229910052710 silicon Inorganic materials 0.000 claims abstract description 29
- 239000010703 silicon Substances 0.000 claims abstract description 29
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000001257 hydrogen Substances 0.000 claims abstract description 20
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 20
- 239000011737 fluorine Substances 0.000 claims abstract description 19
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 19
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000011261 inert gas Substances 0.000 claims abstract description 14
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- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 13
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- 238000001514 detection method Methods 0.000 claims description 24
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- 229910052749 magnesium Inorganic materials 0.000 claims description 9
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- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 8
- 229910017052 cobalt Inorganic materials 0.000 claims description 8
- 239000010941 cobalt Substances 0.000 claims description 8
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 8
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- 229910019236 CoFeB Inorganic materials 0.000 description 2
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- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
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- 229910052741 iridium Inorganic materials 0.000 description 2
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- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
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- SYNPRNNJJLRHTI-UHFFFAOYSA-N 2-(hydroxymethyl)butane-1,4-diol Chemical compound OCCC(CO)CO SYNPRNNJJLRHTI-UHFFFAOYSA-N 0.000 description 1
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- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
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- 229910019041 PtMn Inorganic materials 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
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- -1 argon ions Chemical class 0.000 description 1
- 239000012267 brine Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
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- 229910052802 copper Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
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- QAMFBRUWYYMMGJ-UHFFFAOYSA-N hexafluoroacetylacetone Chemical compound FC(F)(F)C(=O)CC(=O)C(F)(F)F QAMFBRUWYYMMGJ-UHFFFAOYSA-N 0.000 description 1
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- 238000009616 inductively coupled plasma Methods 0.000 description 1
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- SHMWNGFNWYELHA-UHFFFAOYSA-N iridium manganese Chemical compound [Mn].[Ir] SHMWNGFNWYELHA-UHFFFAOYSA-N 0.000 description 1
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- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- IGOJMROYPFZEOR-UHFFFAOYSA-N manganese platinum Chemical compound [Mn].[Pt] IGOJMROYPFZEOR-UHFFFAOYSA-N 0.000 description 1
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- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
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- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
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- HPALAKNZSZLMCH-UHFFFAOYSA-M sodium;chloride;hydrate Chemical compound O.[Na+].[Cl-] HPALAKNZSZLMCH-UHFFFAOYSA-M 0.000 description 1
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- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/8404—Processes or apparatus specially adapted for manufacturing record carriers manufacturing base layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
- H01F10/3259—Spin-exchange-coupled multilayers comprising at least a nanooxide layer [NOL], e.g. with a NOL spacer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
- H01F41/34—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film in patterns, e.g. by lithography
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H01J37/32963—End-point detection
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
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Abstract
【解決手段】金属を含む膜をエッチングする基板処理装置をクリーニングする方法であって、水素含有ガスを含むガスから生成されたプラズマによりカーボン含有堆積物を除去する第1のクリーニング工程と、前記第1のクリーニング工程後に不活性ガスから生成されたプラズマにより金属含有堆積物を除去する第2のクリーニング工程と前記第2のクリーニング工程後にフッ素含有ガス及び酸素含有ガスを含むガスから生成されたプラズマによりシリコン含有堆積物を除去する第3のクリーニング工程と、を有するクリーニング方法が提供される。
【選択図】図4
Description
まず、本発明の一実施形態に係るエッチング装置1について、図1を参照して説明する。図1は、本実施形態に係るエッチング装置1の縦断面の一例を示す。本実施形態に係るエッチング装置1は、処理容器10内に載置台20とガスシャワーヘッド25とを対向配置した平行平板型のプラズマ処理装置(容量結合型プラズマ処理装置)である。載置台20は、半導体ウェハ(以下、単に「ウェハW」という。)を保持する機能を有するとともに下部電極として機能する。ガスシャワーヘッド25は、ガスを処理容器10内にシャワー状に供給する機能を有するとともに上部電極として機能する。
本実施形態に係るエッチング装置1は、ウェハW上のMRAM素子をエッチングした後のクリーニングを複数のクリーニング工程に分けて順に実行することでエッチング時に処理容器10の内部に堆積した金属、カーボン、シリコンの反応生成物を効率よく除去する。
本実施形態にかかるクリーニング方法について、図4のフローチャートを参照しながら説明する。前提として本クリーニングの前にステップS10〜S14においてMRAMのエッチングが実行される。具体的には、ステップS10において製品用のウェハWが搬入され、ステップS12において炭化水素ガスを含むエッチングガスによりプラズマエッチングが実行され、ステップS14においてエッチング後のウェハWが搬出される。本実施形態にかかるクリーニング方法は、1枚又は複数枚の製品用のウェハWのエッチングが実行された後のエッチング装置1のクリーニングに使用される。
クリーニング工程では、まず、ステップS16にてダミーウェハが搬入される。次に、ステップS18にて、処理容器10内にN2(N2)ガス及びH2(H2)ガスを含むガスを供給し、窒素ガス及び水素ガスのプラズマを生成する。生成したプラズマのうちの主に水素ラジカルの作用によりカーボン含有堆積物を除去することができる。なお、本工程は、水素含有ガスを含むガスを供給し、水素含有ガスを含むガスから生成されたプラズマによりカーボン含有堆積物を除去する第1のクリーニング工程の一例である。
図4に戻り、ステップS20において制御部100が第1の終点を検出した場合、ステップS22に進み、第2のクリーニング工程が実行される。第2のクリーニング工程において処理容器10内にはアルゴンガスが供給され、アルゴンガスのプラズマの主にイオンのスパッタの作用により金属含有堆積物がたたき出され、処理容器10外に除去される。なお、本工程は、第1のクリーニング工程後に、不活性ガスを供給し、不活性ガスから生成されたプラズマにより金属含有堆積物を除去する第2のクリーニング工程の一例である。
図4に戻り、ステップS30に進み、第3のクリーニング工程が実行される。第3のクリーニング工程では、処理容器10内に四フッ化炭素(CF4)ガス及び酸素ガスを含むガスが供給され、四フッ化炭素ガス及び酸素ガスのプラズマが生成される。生成したプラズマのうちの主にフッ素系ラジカルの作用によりシリコン(シリコン酸化膜を含む)の堆積物が除去される。なお、本工程は、第2のクリーニング工程後に、フッ素含有ガス及び酸素含有ガスを含むガスを供給し、フッ素含有ガス及び酸素含有ガスを含むガスから生成されたプラズマによりシリコン含有堆積物を除去する第3のクリーニング工程の一例である。
図4に戻り、ステップS32において制御部100が第3の終点を検出した場合、ステップS34に進み、窒素ガス及び水素ガスを含むガスを供給し、第3のクリーニング工程で発生したフッ素系ガス及び酸素系ガスを処理容器外に除去する(シーズニング工程)。これにより、処理容器内の雰囲気を整え、本処理を終了する。
2:MRAM素子
3:下部電極層
4:ピン止め層
5:第2磁性層
6:絶縁層
7:第1磁性層
8:上部電極層
9:マスク
10:処理容器
12:金属積層膜
15:ガス供給源
20:載置台
25:ガスシャワーヘッド
32:第2高周波電源
34:第1高周波電源
100:制御部
103:フォーカスリング
106:静電チャック
108:発光センサ
Dp:堆積物
W:シリコン基板
Claims (10)
- 金属を含む膜をエッチングする基板処理装置をクリーニングする方法であって、
水素含有ガスを含むガスを供給し、該水素含有ガスを含むガスから生成されたプラズマによりカーボン含有堆積物を除去する第1のクリーニング工程と、
前記第1のクリーニング工程後に、不活性ガスを供給し、該不活性ガスから生成されたプラズマにより金属含有堆積物を除去する第2のクリーニング工程と、
前記第2のクリーニング工程後に、フッ素含有ガス及び酸素含有ガスを含むガスを供給し、該フッ素含有ガス及び酸素含有ガスを含むガスから生成されたプラズマによりシリコン含有堆積物を除去する第3のクリーニング工程と、
を有するクリーニング方法。 - 前記第3のクリーニング工程後に、水素含有ガスを含むガスを供給し、該水素含有ガスを含むガスから生成されたプラズマによりフッ素含有ガス及び酸素含有ガスを除去する第4クリーニング工程を有する、
請求項1に記載のクリーニング方法。 - 前記第1のクリーニング工程においてCN(炭化窒素)の発光強度に基づき第1の終点検出を行った後に前記第2のクリーニング工程を開始する、
請求項1又は2に記載のクリーニング方法。 - 前記第2のクリーニング工程においてPt(白金)、Mg(マグネシウム)、Ta(タンタル)、Co(コバルト)及びRu(ルテニウム)の少なくともいずれかの発光強度に基づき第2の終点検出を行った後に前記第3のクリーニング工程を開始する、
請求項1〜3のいずれか一項に記載のクリーニング方法。 - 前記第3のクリーニング工程においてSi(シリコン)の発光強度に基づき第3の終点検出を行った後に前記第4のクリーニング工程を開始する、
請求項2〜4のいずれか一項に記載のクリーニング方法。 - 前記第1〜第3の終点検出の時間に基づき、クリーニング時間の自動制御を行う、
請求項5に記載のクリーニング方法。 - 前記第1のクリーニング工程前にダミーウェハを搬入し、
前記第2のクリーニング工程後に該ダミーウェハを搬出して新たなダミーウェハを搬入する、
請求項1〜6のいずれか一項に記載のクリーニング方法。 - 金属を含む膜をエッチングする基板処理装置をクリーニングする方法であって、
水素含有ガスを含むガスを供給し、該水素含有ガスを含むガスから生成されたプラズマによりカーボン含有堆積物をクリーニングする第1のクリーニング工程と、
前記第1のクリーニング工程後に、不活性ガスを供給し、該不活性ガスから生成されたプラズマにより金属含有堆積物をクリーニングする第2のクリーニング工程と、
を有するクリーニング方法。 - 前記第1のクリーニング工程においてCN(窒化炭素)の発光強度に基づき該第1のクリーニングの終点検出を行った後に前記第2のクリーニング工程を開始する、
請求項8に記載のクリーニング方法。 - 基板処理装置内にてエッチングガスにより金属を含む膜をエッチングする工程と、
前記基板処理装置内に水素含有ガスを含むガスを供給し、該水素含有ガスを含むガスから生成されたプラズマによりカーボン含有堆積物を除去する第1のクリーニング工程と、
前記第1のクリーニング工程後に前記基板処理装置内に不活性ガスを供給し、該不活性ガスから生成されたプラズマにより金属含有堆積物を除去する第2のクリーニング工程と、
前記第2のクリーニング工程後に前記基板処理装置内にフッ素含有ガス及び酸素含有ガスを含むガスを供給し、該フッ素含有ガス及び酸素含有ガスを含むガスから生成されたプラズマによりシリコン含有堆積物を除去する第3のクリーニング工程と、
を有するプラズマ処理方法。
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JP6779165B2 (ja) * | 2017-03-29 | 2020-11-04 | 東京エレクトロン株式会社 | 金属汚染防止方法及び成膜装置 |
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US10944051B2 (en) | 2021-03-09 |
US20190355901A1 (en) | 2019-11-21 |
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WO2016181893A1 (ja) | 2016-11-17 |
KR102366893B1 (ko) | 2022-02-23 |
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JP6661283B2 (ja) | 2020-03-11 |
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