JP2016213339A - 被処理体を処理する方法 - Google Patents
被処理体を処理する方法 Download PDFInfo
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- 238000012545 processing Methods 0.000 title claims abstract description 169
- 238000000034 method Methods 0.000 title claims abstract description 91
- 239000007789 gas Substances 0.000 claims abstract description 110
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 73
- 239000010937 tungsten Substances 0.000 claims abstract description 73
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 73
- 239000000460 chlorine Substances 0.000 claims abstract description 15
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 14
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 9
- 239000011737 fluorine Substances 0.000 claims abstract description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000001301 oxygen Substances 0.000 claims abstract description 6
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 6
- 238000005530 etching Methods 0.000 claims description 24
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 15
- 229910001882 dioxygen Inorganic materials 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 11
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 10
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 claims description 6
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 40
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 10
- YOUIDGQAIILFBW-UHFFFAOYSA-J tetrachlorotungsten Chemical compound Cl[W](Cl)(Cl)Cl YOUIDGQAIILFBW-UHFFFAOYSA-J 0.000 description 10
- 239000003507 refrigerant Substances 0.000 description 9
- 239000007795 chemical reaction product Substances 0.000 description 8
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 229910000042 hydrogen bromide Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- -1 that is Chemical compound 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- VRAIHTAYLFXSJJ-UHFFFAOYSA-N alumane Chemical compound [AlH3].[AlH3] VRAIHTAYLFXSJJ-UHFFFAOYSA-N 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
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- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
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- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Abstract
【解決手段】 一実施形態に係る方法は、(i)被処理体をプラズマ処理装置の処理容器内に準備する工程と、(ii)処理容器内で塩素を含有する第1の処理ガスのプラズマ生成する第1プラズマ処理工程と、(iii)処理容器内でフッ素を含有する第2の処理ガスのプラズマを生成する第2プラズマ処理工程と、(iv)処理容器内で酸素を含有する第3の処理ガスのプラズマを生成する第3プラズマ処理工程と、を含む。この方法では、各々が、第1プラズマ処理工程、第2プラズマ処理工程、及び第3プラズマ処理工程を含む複数回のシーケンスが実行される。
【選択図】図1
Description
・処理容器12内の圧力:10mTorr(1.333Pa)
・第1の高周波電源62の高周波:100MHz
・第1の高周波電源62の高周波のパルス変調周波数:50kHz
・第1の高周波電源62の高周波のパルス変調のデューティ比:50%
・第2の高周波電源64の高周波バイアス(連続波):13.56MHz
・塩素ガスの流量:160sccm
・窒素ガスの流量:50sccm
・酸素ガスの流量:30sccm
・ウエハの温度:50℃
・処理時間:6秒
<実験例1の工程ST3の条件>
・処理容器12内の圧力:15mTorr(2Pa)
・第1の高周波電源62の高周波:100MHz
・第1の高周波電源62の高周波のパルス変調周波数:10kHz
・第1の高周波電源62の高周波のパルス変調のデューティ比:50%
・第2の高周波電源64の高周波バイアス(連続波):13.56MHz
・三フッ化窒素ガスの流量:15sccm
・CF4ガスの流量:30sccm
・酸素ガスの流量:50sccm
・ウエハの温度:50℃
・処理時間:5.5秒
<実験例1の工程ST4の条件>
・処理容器12内の圧力:100mTorr(13.33Pa)
・第1の高周波電源62の高周波(連続波):100MHz
・第2の高周波電源64の高周波バイアス(連続波):13.56MHz
・酸素ガスの流量:800sccm
・窒素ガスの流量:100sccm
・ウエハの温度:50℃
・処理時間:5秒
・処理容器12内の圧力:10mTorr(1.333Pa)
・第1の高周波電源62の高周波(連続波):100MHz
・第2の高周波電源64の高周波バイアス:13.56MHz
・第2の高周波電源64の高周波バイアスのパルス変調周波数:10kHz
・第2の高周波電源64の高周波バイアスのパルス変調のデューティ比:50%
・塩素ガスの流量:185sccm
・ウエハの温度:60℃
・処理時間:120秒
・シーケンスSQの実行回数:12回
<実験例1の工程ST2の条件>
・処理容器12内の圧力:10mTorr(1.333Pa)
・第1の高周波電源62の高周波:100MHz
・第1の高周波電源62の高周波のパルス変調周波数:50kHz
・第1の高周波電源62の高周波のパルス変調のデューティ比:50%
・第2の高周波電源64の高周波バイアス(連続波):13.56MHz
・塩素ガスの流量:160sccm
・窒素ガスの流量:50sccm
・酸素ガスの流量:30sccm
・処理時間:6秒
<実験例1の工程ST3の条件>
・処理容器12内の圧力:15mTorr(2Pa)
・第1の高周波電源62の高周波:100MHz
・第1の高周波電源62の高周波のパルス変調周波数:10kHz
・第1の高周波電源62の高周波のパルス変調のデューティ比:50%
・第2の高周波電源64の高周波バイアス(連続波):13.56MHz
・三フッ化窒素ガスの流量:15sccm
・CF4ガスの流量:30sccm
・酸素ガスの流量:50sccm
・処理時間:5.5秒
<実験例1の工程ST4の条件>
・処理容器12内の圧力:100mTorr(13.33Pa)
・第1の高周波電源62の高周波(連続波):100MHz
・第2の高周波電源64の高周波バイアス(連続波):13.56MHz
・酸素ガスの流量:800sccm
・窒素ガスの流量:100sccm
・処理時間:5秒
Claims (10)
- タングステン含有膜、及び該タングステン含有膜上に設けられたマスクを有する被処理体を処理する方法であって、
前記被処理体をプラズマ処理装置の処理容器内に準備する工程と、
前記処理容器内で塩素を含有する第1の処理ガスのプラズマ生成する工程と、
前記処理容器内でフッ素を含有する第2の処理ガスのプラズマを生成する工程と、
前記処理容器内で酸素を含有する第3の処理ガスのプラズマを生成する工程と、
を含み、
各々が、第1の処理ガスのプラズマ生成する前記工程、第2の処理ガスのプラズマを生成する前記工程、及び第3の処理ガスのプラズマを生成する前記工程を含む複数回のシーケンスが実行される、方法。 - 前記複数回のシーケンスにおいて、前記被処理体の温度が50℃以上の温度に設定される、請求項1に記載の方法。
- 前記第1の処理ガスは塩素ガスを含む、請求項1又は2に記載の方法。
- 前記第1の処理ガスは窒素ガス及び/又は酸素ガスを更に含む、請求項3に記載の方法。
- 前記第2の処理ガスはフルオロカーボンガス及び三フッ化窒素ガスのうち少なくとも一方を含む、請求項1〜4の何れか一項に記載の方法。
- 前記第2の処理ガスは酸素ガスを更に含む、請求項5に記載の方法。
- 前記第3の処理ガスは酸素ガスを含む、請求項1〜6の何れか一項に記載の方法。
- 前記第3の処理ガスは窒素ガスを更に含む、請求項7に記載の方法。
- 第2の処理ガスのプラズマを生成する前記工程において、前記処理容器内の空間の圧力が2.666Pa以下の圧力に設定される、請求項1〜8の何れか一項に記載の方法。
- 前記被処理体は、多結晶シリコン層を更に有し、前記タングステン含有膜は前記多結晶シリコン層上に設けられており、
前記多結晶シリコン層をエッチングする工程を更に含む、
請求項1〜9の何れか一項に記載の方法。
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