JP2016207915A - 被処理体を処理する方法 - Google Patents
被処理体を処理する方法 Download PDFInfo
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- JP2016207915A JP2016207915A JP2015090158A JP2015090158A JP2016207915A JP 2016207915 A JP2016207915 A JP 2016207915A JP 2015090158 A JP2015090158 A JP 2015090158A JP 2015090158 A JP2015090158 A JP 2015090158A JP 2016207915 A JP2016207915 A JP 2016207915A
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- gas
- plasma
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- processing
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- 238000012545 processing Methods 0.000 title claims abstract description 264
- 238000000034 method Methods 0.000 title claims abstract description 191
- 239000007789 gas Substances 0.000 claims abstract description 280
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 79
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- 229910052710 silicon Inorganic materials 0.000 claims abstract description 62
- 239000010703 silicon Substances 0.000 claims abstract description 62
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 37
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910001882 dioxygen Inorganic materials 0.000 claims abstract description 20
- 238000005530 etching Methods 0.000 claims description 41
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- 150000002500 ions Chemical class 0.000 claims description 17
- 230000001681 protective effect Effects 0.000 claims description 9
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 claims description 6
- 229910003902 SiCl 4 Inorganic materials 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 3
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- 238000010168 coupling process Methods 0.000 abstract 1
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- 101000622427 Homo sapiens Vang-like protein 1 Proteins 0.000 description 4
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- 229910003691 SiBr Inorganic materials 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
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- 230000005593 dissociations Effects 0.000 description 2
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- 229910052756 noble gas Inorganic materials 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 239000006200 vaporizer Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VRAIHTAYLFXSJJ-UHFFFAOYSA-N alumane Chemical compound [AlH3].[AlH3] VRAIHTAYLFXSJJ-UHFFFAOYSA-N 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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Abstract
【解決手段】
一実施形態の方法は、被処理体を収容した処理容器内に、シリコン含有ガスを含む第1のガスを供給する第1工程と、第1工程の実行後に、処理容器内で希ガスのプラズマを生成する第2工程と、第2工程の実行後に、処理容器内で酸素ガスを含む第2のガスのプラズマを生成する第3工程と、第3工程の実行後に、処理容器内で希ガスのプラズマを生成する第4工程と、含む。この方法では、第1〜第4工程を含むシーケンスが繰り返して実行されることにより、シリコン酸化膜が形成される。また、この方法では、第2工程、第3工程、及び第4工程の少なくとも何れかにおいて、容量結合型のプラズマ処理装置の上部電極に負の直流電圧が印加される。
【選択図】図1
Description
Claims (15)
- 容量結合型のプラズマ処理装置を用いて被処理体を処理する方法であって、
前記被処理体は、マスクを有し、
前記プラズマ処理装置は、処理空間を提供する処理容器、下部電極を含み、その上に前記被処理体が載置される載置台、及び、該処理容器内の処理空間を介して前記載置台に面するシリコン製の天板を含む上部電極を備え、
前記被処理体を収容した前記処理容器内に、シリコン含有ガスを含む第1のガスを供給する第1工程と、
前記第1工程の実行後に、前記処理容器内で希ガスのプラズマを生成する第2工程と、
前記第2工程の実行後に、前記処理容器内で酸素ガスを含む第2のガスのプラズマを生成する第3工程と、
前記第3工程の実行後に、前記処理容器内で希ガスのプラズマを生成する第4工程と、
含み、
前記第1工程、前記第2工程、前記第3工程、及び前記4工程を含むシーケンスを繰り返して実行することによりシリコン酸化膜を形成し、
前記第2工程、前記第3工程、及び、前記第4工程の少なくとも何れかにおいて、前記上部電極に負の直流電圧が印加される、
方法。 - 前記シリコン含有ガスは、アミノシランガスであり、前記第1工程では、プラズマは生成されない、請求項1に記載の方法。
- 前記シリコン含有ガスは、ハロゲン化ケイ素ガスであり、前記第1工程では、前記第1のガスのプラズマが生成される、請求項1に記載の方法。
- 前記シリコン含有ガスは、SiCl4ガスであり、請求項3に記載の方法。
- 前記第1工程、前記第2工程、前記第3工程、及び前記第4工程が順に連続して実行され、
前記第1工程、前記第2工程、前記第3工程、及び前記第4工程にわたって、前記希ガスのプラズマが生成される、
請求項3又は4に記載の方法。 - 前記第4工程において前記処理容器内に供給される前記希ガスの流量が、前記第3工程において前記処理容器内に供給される前記希ガスの流量よりも大きい、請求項5に記載の方法。
- 前記第1工程では、前記処理容器内の圧力が13.33Pa以上の圧力であり、プラズマ生成用の高周波電源の電力が100W以下である高圧低電力の条件に設定される、請求項3〜6の何れか一項に記載の方法。
- 前記第1工程では、イオンを引き込み用の高周波バイアスが前記下部電極に供給されない、請求項3〜7の何れか一項に記載の方法。
- 前記被処理体は、有機膜を更に有し、前記マスクは該有機膜上に設けられており、
前記処理容器内で発生させたプラズマにより、前記マスクの側壁に沿って形成された前記シリコン酸化膜の部分領域が残るように、前記シリコン酸化膜をエッチングする工程と、
前記処理容器内で発生させたプラズマにより、前記有機膜をエッチングする工程と、
を更に含む、
請求項1〜8の何れか一項に記載の方法。 - 前記被処理体は、シリコン酸化膜である被エッチング層を更に有し、前記有機膜は該被エッチング層上に設けられており、
前記有機膜をエッチングする前記工程の実行後に、前記処理容器内で発生させたプラズマにより、前記被エッチング層をエッチングする工程を更に含む、請求項9に記載の方法。 - 前記被処理体は、前記有機膜上に設けられたシリコン含有反射防止膜を更に有し、
前記マスクは、前記反射防止膜上に設けられたレジストマスクであり、
該方法は、シリコン酸化膜をエッチングする前記工程の実行後、前記有機膜をエッチングする前記工程の実行前に、前記処理容器内で発生させたプラズマにより、前記反射防止膜をエッチングする工程を更に含む、
請求項9又は10に記載の方法。 - 前記シーケンスを繰り返して実行する前に、前記処理容器内でプラズマを発生させて、前記上部電極に負の直流電圧を印加することにより、前記マスクに二次電子を照射する工程を更に含む、請求項11に記載の方法。
- 前記シーケンスを繰り返して実行する前に、前記処理容器内で発生させたプラズマにより、その上にレジストマスクを有する反射防止膜をエッチングする工程であり、該反射防止膜から前記マスクが形成される、該工程を更に含む、請求項9又は10に記載の方法。
- 反射防止膜をエッチングする前記工程の実行前に、前記処理容器内でプラズマを発生させて、前記上部電極に負の直流電圧を印加することにより、前記レジストマスクに二次電子を照射する工程を更に含む、
請求項13に記載の方法。 - 反射防止膜をエッチングする前記工程の実行後、且つ、前記シーケンスを繰り返して実行する前に、前記被処理体上に酸化シリコン製の保護膜を形成する工程を更に含む、請求項13又は14に記載の方法。
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JP2017073535A (ja) * | 2015-10-06 | 2017-04-13 | 東京エレクトロン株式会社 | 被処理体を処理する方法 |
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KR20160127674A (ko) | 2016-11-04 |
JP6462477B2 (ja) | 2019-01-30 |
TW201705310A (zh) | 2017-02-01 |
US20160314982A1 (en) | 2016-10-27 |
EP3089198A1 (en) | 2016-11-02 |
TWI689995B (zh) | 2020-04-01 |
CN106098523B (zh) | 2018-09-07 |
US9859126B2 (en) | 2018-01-02 |
KR102385488B1 (ko) | 2022-04-11 |
CN106098523A (zh) | 2016-11-09 |
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