JP2016201407A5 - - Google Patents

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JP2016201407A5
JP2016201407A5 JP2015078949A JP2015078949A JP2016201407A5 JP 2016201407 A5 JP2016201407 A5 JP 2016201407A5 JP 2015078949 A JP2015078949 A JP 2015078949A JP 2015078949 A JP2015078949 A JP 2015078949A JP 2016201407 A5 JP2016201407 A5 JP 2016201407A5
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Japan
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layer
intermediate layer
metal layer
metal
discharge
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JP2015078949A
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JP6360457B2 (ja
JP2016201407A (ja
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Priority to US14/828,830 priority patent/US9780111B2/en
Publication of JP2016201407A publication Critical patent/JP2016201407A/ja
Publication of JP2016201407A5 publication Critical patent/JP2016201407A5/ja
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中間層７１を形成するスパッタ時間は、金属層７０を形成するスパッタ時間よりも短く、中間層７１は金属層７０よりも薄い。中間層７１と金属層７０は同種層（タングステン層またはモリブデン層）であるが、中間層７１は、電気抵抗よりも内部応力の制御を優先した機能を付与される。例えば、中間層７１の膜密度は金属層７０の膜密度よりも低い、または中間層７１の結晶粒径は金属層７０の結晶粒径よりも小さい。中間層７１は、放電開始時の放電が安定していない状態で形成してもよい。
JP2015078949A 2015-04-08 2015-04-08 半導体装置及びその製造方法 Active JP6360457B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2015078949A JP6360457B2 (ja) 2015-04-08 2015-04-08 半導体装置及びその製造方法
US14/828,830 US9780111B2 (en) 2015-04-08 2015-08-18 Semiconductor device and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015078949A JP6360457B2 (ja) 2015-04-08 2015-04-08 半導体装置及びその製造方法

Publications (3)

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JP2016201407A JP2016201407A (ja) 2016-12-01
JP2016201407A5 true JP2016201407A5 (ja) 2017-09-14
JP6360457B2 JP6360457B2 (ja) 2018-07-18

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JP2015078949A Active JP6360457B2 (ja) 2015-04-08 2015-04-08 半導体装置及びその製造方法

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US (1) US9780111B2 (ja)
JP (1) JP6360457B2 (ja)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102275051B1 (ko) * 2014-01-21 2021-07-07 어플라이드 머티어리얼스, 인코포레이티드 3d 플래시 메모리 애플리케이션을 위한 유전체-금속 스택
EP3320314A2 (en) * 2015-07-10 2018-05-16 The Charles Stark Draper Laboratory, Inc. Thermal event sensor
DE102016207307A1 (de) * 2016-04-28 2017-11-02 Carl Zeiss Smt Gmbh Optisches Element und optische Anordnung damit
JP2019165050A (ja) 2018-03-19 2019-09-26 東芝メモリ株式会社 半導体装置およびその製造方法
US10840259B2 (en) 2018-08-13 2020-11-17 Sandisk Technologies Llc Three-dimensional memory device including liner free molybdenum word lines and methods of making the same
JP2020047706A (ja) 2018-09-18 2020-03-26 キオクシア株式会社 半導体装置およびその製造方法
JP2020150147A (ja) 2019-03-14 2020-09-17 キオクシア株式会社 半導体記憶装置
JP2020150218A (ja) 2019-03-15 2020-09-17 キオクシア株式会社 半導体記憶装置
US11158718B2 (en) * 2019-04-15 2021-10-26 Micron Technology, Inc. Assemblies which include wordlines having a first metal-containing material at least partially surrounding a second metal-containing material and having different crystallinity than the second metal-containing material
CN111583795B (zh) * 2020-05-12 2022-03-08 Tcl华星光电技术有限公司 显示面板的制备方法及显示装置
TW202204662A (zh) * 2020-07-20 2022-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於沉積鉬層之方法及系統

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3248262B2 (ja) * 1992-09-25 2002-01-21 松下電器産業株式会社 半導体装置の製造方法
JP2010080685A (ja) * 2008-09-26 2010-04-08 Toshiba Corp 不揮発性記憶装置及びその製造方法
KR101604054B1 (ko) * 2009-09-03 2016-03-16 삼성전자주식회사 반도체 소자 및 그 형성방법
US20120064682A1 (en) * 2010-09-14 2012-03-15 Jang Kyung-Tae Methods of Manufacturing Three-Dimensional Semiconductor Memory Devices
JP5670704B2 (ja) 2010-11-10 2015-02-18 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
JP2012146861A (ja) 2011-01-13 2012-08-02 Toshiba Corp 半導体記憶装置
JP5351201B2 (ja) 2011-03-25 2013-11-27 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
KR102101841B1 (ko) * 2013-10-28 2020-04-17 삼성전자 주식회사 수직형 비휘발성 메모리 소자

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