JP2016201407A5 - - Google Patents
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- Publication number
- JP2016201407A5 JP2016201407A5 JP2015078949A JP2015078949A JP2016201407A5 JP 2016201407 A5 JP2016201407 A5 JP 2016201407A5 JP 2015078949 A JP2015078949 A JP 2015078949A JP 2015078949 A JP2015078949 A JP 2015078949A JP 2016201407 A5 JP2016201407 A5 JP 2016201407A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- intermediate layer
- metal layer
- metal
- discharge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015078949A JP6360457B2 (ja) | 2015-04-08 | 2015-04-08 | 半導体装置及びその製造方法 |
| US14/828,830 US9780111B2 (en) | 2015-04-08 | 2015-08-18 | Semiconductor device and method for manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015078949A JP6360457B2 (ja) | 2015-04-08 | 2015-04-08 | 半導体装置及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016201407A JP2016201407A (ja) | 2016-12-01 |
| JP2016201407A5 true JP2016201407A5 (OSRAM) | 2017-09-14 |
| JP6360457B2 JP6360457B2 (ja) | 2018-07-18 |
Family
ID=57112059
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015078949A Active JP6360457B2 (ja) | 2015-04-08 | 2015-04-08 | 半導体装置及びその製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US9780111B2 (OSRAM) |
| JP (1) | JP6360457B2 (OSRAM) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015112327A1 (en) | 2014-01-21 | 2015-07-30 | Applied Materials, Inc. | Dielectric-metal stack for 3d flash memory application |
| WO2017058330A2 (en) * | 2015-07-10 | 2017-04-06 | The Charles Stark Draper Laboratory, Inc. | Thermal event sensor |
| DE102016207307A1 (de) * | 2016-04-28 | 2017-11-02 | Carl Zeiss Smt Gmbh | Optisches Element und optische Anordnung damit |
| JP2019165050A (ja) | 2018-03-19 | 2019-09-26 | 東芝メモリ株式会社 | 半導体装置およびその製造方法 |
| US10840259B2 (en) | 2018-08-13 | 2020-11-17 | Sandisk Technologies Llc | Three-dimensional memory device including liner free molybdenum word lines and methods of making the same |
| JP2020047706A (ja) | 2018-09-18 | 2020-03-26 | キオクシア株式会社 | 半導体装置およびその製造方法 |
| JP2020150147A (ja) * | 2019-03-14 | 2020-09-17 | キオクシア株式会社 | 半導体記憶装置 |
| JP2020150218A (ja) | 2019-03-15 | 2020-09-17 | キオクシア株式会社 | 半導体記憶装置 |
| US11158718B2 (en) | 2019-04-15 | 2021-10-26 | Micron Technology, Inc. | Assemblies which include wordlines having a first metal-containing material at least partially surrounding a second metal-containing material and having different crystallinity than the second metal-containing material |
| CN111583795B (zh) * | 2020-05-12 | 2022-03-08 | Tcl华星光电技术有限公司 | 显示面板的制备方法及显示装置 |
| KR20220011092A (ko) | 2020-07-20 | 2022-01-27 | 에이에스엠 아이피 홀딩 비.브이. | 전이 금속층을 포함하는 구조체를 형성하기 위한 방법 및 시스템 |
| TWI878570B (zh) * | 2020-07-20 | 2025-04-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 用於沉積鉬層之方法及系統 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3248262B2 (ja) * | 1992-09-25 | 2002-01-21 | 松下電器産業株式会社 | 半導体装置の製造方法 |
| JP2010080685A (ja) * | 2008-09-26 | 2010-04-08 | Toshiba Corp | 不揮発性記憶装置及びその製造方法 |
| KR101604054B1 (ko) * | 2009-09-03 | 2016-03-16 | 삼성전자주식회사 | 반도체 소자 및 그 형성방법 |
| US20120064682A1 (en) * | 2010-09-14 | 2012-03-15 | Jang Kyung-Tae | Methods of Manufacturing Three-Dimensional Semiconductor Memory Devices |
| JP5670704B2 (ja) | 2010-11-10 | 2015-02-18 | 株式会社東芝 | 不揮発性半導体記憶装置及びその製造方法 |
| JP2012146861A (ja) | 2011-01-13 | 2012-08-02 | Toshiba Corp | 半導体記憶装置 |
| JP5351201B2 (ja) | 2011-03-25 | 2013-11-27 | 株式会社東芝 | 不揮発性半導体記憶装置及びその製造方法 |
| KR102101841B1 (ko) * | 2013-10-28 | 2020-04-17 | 삼성전자 주식회사 | 수직형 비휘발성 메모리 소자 |
-
2015
- 2015-04-08 JP JP2015078949A patent/JP6360457B2/ja active Active
- 2015-08-18 US US14/828,830 patent/US9780111B2/en active Active
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