JP2016197754A5 - - Google Patents

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Publication number
JP2016197754A5
JP2016197754A5 JP2016156027A JP2016156027A JP2016197754A5 JP 2016197754 A5 JP2016197754 A5 JP 2016197754A5 JP 2016156027 A JP2016156027 A JP 2016156027A JP 2016156027 A JP2016156027 A JP 2016156027A JP 2016197754 A5 JP2016197754 A5 JP 2016197754A5
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JP
Japan
Prior art keywords
layer
magnetization
magnetization free
magnetic memory
response
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Application number
JP2016156027A
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English (en)
Japanese (ja)
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JP6304697B2 (ja
JP2016197754A (ja
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Publication of JP2016197754A publication Critical patent/JP2016197754A/ja
Publication of JP2016197754A5 publication Critical patent/JP2016197754A5/ja
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Publication of JP6304697B2 publication Critical patent/JP6304697B2/ja
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JP2016156027A 2011-05-20 2016-08-08 磁気メモリ素子および磁気メモリ Active JP6304697B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011113697 2011-05-20
JP2011113697 2011-05-20

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2013516265A Division JP6029020B2 (ja) 2011-05-20 2012-04-19 磁気メモリ素子および磁気メモリ

Publications (3)

Publication Number Publication Date
JP2016197754A JP2016197754A (ja) 2016-11-24
JP2016197754A5 true JP2016197754A5 (enExample) 2017-03-02
JP6304697B2 JP6304697B2 (ja) 2018-04-04

Family

ID=47217020

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2013516265A Active JP6029020B2 (ja) 2011-05-20 2012-04-19 磁気メモリ素子および磁気メモリ
JP2016156027A Active JP6304697B2 (ja) 2011-05-20 2016-08-08 磁気メモリ素子および磁気メモリ

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2013516265A Active JP6029020B2 (ja) 2011-05-20 2012-04-19 磁気メモリ素子および磁気メモリ

Country Status (3)

Country Link
US (1) US9799822B2 (enExample)
JP (2) JP6029020B2 (enExample)
WO (1) WO2012160937A1 (enExample)

Families Citing this family (18)

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Publication number Priority date Publication date Assignee Title
US9007818B2 (en) 2012-03-22 2015-04-14 Micron Technology, Inc. Memory cells, semiconductor device structures, systems including such cells, and methods of fabrication
US8923038B2 (en) 2012-06-19 2014-12-30 Micron Technology, Inc. Memory cells, semiconductor device structures, memory systems, and methods of fabrication
US9054030B2 (en) 2012-06-19 2015-06-09 Micron Technology, Inc. Memory cells, semiconductor device structures, memory systems, and methods of fabrication
US9379315B2 (en) 2013-03-12 2016-06-28 Micron Technology, Inc. Memory cells, methods of fabrication, semiconductor device structures, and memory systems
US20140306303A1 (en) * 2013-04-16 2014-10-16 Headway Technologies, Inc. Seed Layer for Perpendicular Magnetic Anisotropy (PMA) Thin Film
US9368714B2 (en) 2013-07-01 2016-06-14 Micron Technology, Inc. Memory cells, methods of operation and fabrication, semiconductor device structures, and memory systems
US9466787B2 (en) 2013-07-23 2016-10-11 Micron Technology, Inc. Memory cells, methods of fabrication, semiconductor device structures, memory systems, and electronic systems
US9461242B2 (en) 2013-09-13 2016-10-04 Micron Technology, Inc. Magnetic memory cells, methods of fabrication, semiconductor devices, memory systems, and electronic systems
US9608197B2 (en) 2013-09-18 2017-03-28 Micron Technology, Inc. Memory cells, methods of fabrication, and semiconductor devices
US10454024B2 (en) 2014-02-28 2019-10-22 Micron Technology, Inc. Memory cells, methods of fabrication, and memory devices
US9281466B2 (en) 2014-04-09 2016-03-08 Micron Technology, Inc. Memory cells, semiconductor structures, semiconductor devices, and methods of fabrication
US9269888B2 (en) 2014-04-18 2016-02-23 Micron Technology, Inc. Memory cells, methods of fabrication, and semiconductor devices
US9349945B2 (en) 2014-10-16 2016-05-24 Micron Technology, Inc. Memory cells, semiconductor devices, and methods of fabrication
US9768377B2 (en) 2014-12-02 2017-09-19 Micron Technology, Inc. Magnetic cell structures, and methods of fabrication
US10439131B2 (en) 2015-01-15 2019-10-08 Micron Technology, Inc. Methods of forming semiconductor devices including tunnel barrier materials
JP6743641B2 (ja) * 2016-10-18 2020-08-19 Tdk株式会社 磁場変調機構、磁場変調素子、アナログメモリ素子、及び、高周波フィルタ
JP7003991B2 (ja) * 2017-04-14 2022-01-21 Tdk株式会社 磁壁利用型アナログメモリ素子、磁壁利用型アナログメモリ、不揮発性ロジック回路及び磁気ニューロ素子
US11894172B2 (en) * 2018-11-06 2024-02-06 Tdk Corporation Domain wall moving element, domain wall moving type magnetic recording element and magnetic recording array

Family Cites Families (20)

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Publication number Priority date Publication date Assignee Title
JP3607850B2 (ja) * 2000-04-06 2005-01-05 アルプス電気株式会社 磁気抵抗効果型薄膜磁気素子及びその製造方法と、その磁気抵抗効果型薄膜磁気素子を備えた薄膜磁気ヘッド
JP3729159B2 (ja) * 2002-06-26 2005-12-21 ソニー株式会社 磁気メモリ装置
JP4413603B2 (ja) 2003-12-24 2010-02-10 株式会社東芝 磁気記憶装置及び磁気情報の書込み方法
JP5040105B2 (ja) * 2005-12-01 2012-10-03 ソニー株式会社 記憶素子、メモリ
JP5146836B2 (ja) 2006-12-06 2013-02-20 日本電気株式会社 磁気ランダムアクセスメモリ及びその製造方法
US7598579B2 (en) * 2007-01-30 2009-10-06 Magic Technologies, Inc. Magnetic tunnel junction (MTJ) to reduce spin transfer magnetization switching current
US7573736B2 (en) * 2007-05-22 2009-08-11 Taiwan Semiconductor Manufacturing Company Spin torque transfer MRAM device
JP5598697B2 (ja) * 2007-06-25 2014-10-01 日本電気株式会社 磁気抵抗効果素子、および磁気ランダムアクセスメモリ
JP2009081315A (ja) 2007-09-26 2009-04-16 Toshiba Corp 磁気抵抗素子及び磁気メモリ
JP5382348B2 (ja) * 2007-11-05 2014-01-08 日本電気株式会社 磁気抵抗効果素子、及び磁気ランダムアクセスメモリ
JP5366014B2 (ja) * 2008-01-25 2013-12-11 日本電気株式会社 磁気ランダムアクセスメモリ及びその初期化方法
US8625327B2 (en) * 2008-07-15 2014-01-07 Nec Corporation Magnetic random access memory and initializing method for the same
WO2010041719A1 (ja) * 2008-10-10 2010-04-15 株式会社アルバック 記憶素子
US9165625B2 (en) * 2008-10-30 2015-10-20 Seagate Technology Llc ST-RAM cells with perpendicular anisotropy
US8687414B2 (en) * 2008-12-25 2014-04-01 Nec Corporation Magnetic memory element and magnetic random access memory
WO2010095589A1 (ja) 2009-02-17 2010-08-26 日本電気株式会社 磁気抵抗効果素子、及び磁気ランダムアクセスメモリ
JP2010219104A (ja) * 2009-03-13 2010-09-30 Nec Corp 磁気メモリ素子、磁気メモリ、及びその製造方法
WO2010137679A1 (ja) * 2009-05-28 2010-12-02 株式会社日立製作所 磁気抵抗効果素子及びそれを用いたランダムアクセスメモリ
WO2011036753A1 (ja) * 2009-09-24 2011-03-31 株式会社 東芝 磁気メモリ
JP5526707B2 (ja) * 2009-10-27 2014-06-18 ソニー株式会社 情報記憶素子の駆動方法

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