JP2016186094A - タングステン膜の成膜方法 - Google Patents
タングステン膜の成膜方法 Download PDFInfo
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- JP2016186094A JP2016186094A JP2015065662A JP2015065662A JP2016186094A JP 2016186094 A JP2016186094 A JP 2016186094A JP 2015065662 A JP2015065662 A JP 2015065662A JP 2015065662 A JP2015065662 A JP 2015065662A JP 2016186094 A JP2016186094 A JP 2016186094A
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- gas
- film
- tungsten
- tungsten film
- wcl
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title claims abstract description 192
- 239000010937 tungsten Substances 0.000 title claims abstract description 191
- 229910052721 tungsten Inorganic materials 0.000 title claims abstract description 191
- 238000000151 deposition Methods 0.000 title abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 66
- YOUIDGQAIILFBW-UHFFFAOYSA-J tetrachlorotungsten Chemical compound Cl[W](Cl)(Cl)Cl YOUIDGQAIILFBW-UHFFFAOYSA-J 0.000 claims abstract description 50
- 238000010926 purge Methods 0.000 claims abstract description 45
- 239000000463 material Substances 0.000 claims abstract description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 21
- 230000008569 process Effects 0.000 claims description 21
- 238000003860 storage Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 10
- 239000010936 titanium Substances 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 150000003658 tungsten compounds Chemical class 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 336
- 238000005530 etching Methods 0.000 description 35
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 28
- 238000005755 formation reaction Methods 0.000 description 19
- 238000000231 atomic layer deposition Methods 0.000 description 18
- 238000005229 chemical vapour deposition Methods 0.000 description 15
- 230000007246 mechanism Effects 0.000 description 15
- 239000002994 raw material Substances 0.000 description 14
- 239000012159 carrier gas Substances 0.000 description 13
- 230000001965 increasing effect Effects 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000006722 reduction reaction Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- KPGXUAIFQMJJFB-UHFFFAOYSA-H tungsten hexachloride Chemical compound Cl[W](Cl)(Cl)(Cl)(Cl)Cl KPGXUAIFQMJJFB-UHFFFAOYSA-H 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010037 TiAlN Inorganic materials 0.000 description 1
- 229910010282 TiON Inorganic materials 0.000 description 1
- 229910008482 TiSiN Inorganic materials 0.000 description 1
- 229910003091 WCl6 Inorganic materials 0.000 description 1
- 229910008807 WSiN Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011534 incubation Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
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Abstract
【解決手段】塩化タングステンガスおよび還元ガスを、チャンバー内のパージを挟んでシーケンシャルにチャンバー内に供給して主タングステン膜を成膜する主タングステン膜成膜工程と、主タングステン膜成膜工程に先立って、塩化タングステンガスの供給量を主タングステン膜成膜工程よりも少なくして、塩化タングステンガスおよび還元ガスをパージガスの供給を挟んでシーケンシャルに、または塩化タングステンガスおよび還元ガスを同時にチャンバー内に供給して、下地膜の上に初期タングステン膜を成膜する初期タングステン膜成膜工程とを有する。
【選択図】 図3
Description
<成膜装置の例>
図1は本発明に係るタングステン膜の成膜方法の実施に用いられる成膜装置の一例を示す断面図である。この成膜装置は、ALD成膜とCVD成膜の両方の成膜モードが可能な装置として構成されている。
次に、以上のように構成された成膜装置100を用いて行われるタングステン膜の成膜方法の実施形態について説明する。
最初に成膜方法の概要について説明する。
本実施形態に係る成膜方法は、微細な凹部を有する絶縁膜の表面にTiN膜等の下地膜が形成されたウエハに対してタングステン膜を成膜する場合に適用される。
TiN(s)+WCl6(g)→TiCl4(g)+WClx(g)・・・(1)
下地膜202として他のチタン系材料膜およびタングステン化合物膜を用いた場合も同様に塩化タングステンガスであるWCl6ガスによりエッチングされる。
次に、図1の成膜装置を用いた場合の具体的なシーケンスについて説明する。
まず、サセプタ2を搬送位置に下降させた状態でゲートバルブ12を開け、搬送装置(図示せず)により、図3(a)に示すように、絶縁膜201の上にTiN膜のような下地膜202が形成されたウエハWを、搬入出口11を介してチャンバー1内に搬入し、ヒーター21により所定温度に加熱されたサセプタ2上に載置し、サセプタ2を処理位置まで上昇させ、チャンバー1内を所定の真空度まで真空引きするとともに、開閉バルブ104、95a、95b、99を閉じ、開閉バルブ102、103、96a,96bを開けて、エバック配管101を介して成膜原料タンク91内も同様に真空引きした後、開閉バルブ76および開閉バルブ78を開け、開閉バルブ73,74,75,77,79を閉じて、第1N2ガス供給源54および第2N2ガス供給源55から、第1連続N2ガス供給ライン66および第2連続N2ガス供給ライン68を経てN2ガスをチャンバー1内に供給して圧力を上昇させ、サセプタ2上のウエハWの温度を安定させる。
以下に、初期タングステン膜203および主タングステン膜204の好ましい成膜条件について示す。
i)ALD
圧力:20〜100Torr(2666〜13330Pa)
温度:300℃以上(より好ましくは450〜600℃)
WCl6ガス流量:0.1〜10sccm(mL/min)
(キャリアガス流量:1〜1000sccm(mL/min))
WCl6ガス分圧(既述):1Torr(133.3Pa)以下(より好ましくは0.1Torr(13.33Pa)以下)
メインH2ガス流量:10〜5000sccm(mL/min)
連続供給N2ガス流量:10〜10000sccm(mL/min)
(第1および第2連続N2ガス供給ライン66,68)
フラッシュパージN2ガス流量:100〜100000sccm(mL/min)
(第1および第2フラッシュパージライン67,69)
ステップS1の時間(1回あたり):0.01〜5sec
ステップS3の時間(1回あたり):0.1〜5sec
ステップS2、S4の時間(パージ)(1回あたり):0.1〜5sec
ステップS1の添加H2ガス供給時間(1回あたり):0.01〜0.3sec
成膜原料タンクの加温温度:130〜190℃
ii)CVD
圧力:20〜100Torr(2666〜13330Pa)
温度:300℃以上(好ましくは450〜600℃)
WCl6ガス流量:0.1〜10sccm(mL/min)
(キャリアガス流量:1〜1000sccm(mL/min))
WCl6ガス分圧(既述):1Torr(133.3Pa)以下(好ましくは0.1Torr(13.33Pa)以下)
メインH2ガス流量:10〜5000sccm(mL/min)
N2ガス流量:10〜10000sccm(mL/min)
圧力:5〜50Torr(666.5〜6665Pa)
温度:300℃以上(好ましくは450〜600℃)
WCl6ガス流量:3〜60sccm(mL/min)
(キャリアガス流量:100〜2000sccm(mL/min))
WCl6ガス分圧:0.5〜10Torr(66.7〜1333Pa)
メインH2ガス流量:2000〜8000sccm(mL/min)
添加H2ガス流量(既述):100〜500sccm(mL/min)
連続供給N2ガス流量:100〜500sccm(mL/min)
(第1および第2連続N2ガス供給ライン66,68)
フラッシュパージN2ガス流量:500〜3000sccm(mL/min)
(第1および第2フラッシュパージライン67,69)
ステップS1の時間(1回あたり):0.01〜5sec
ステップS3の時間(1回あたり):0.1〜5sec
ステップS2、S4の時間(パージ)(1回あたり):0.1〜5sec
ステップS1の添加H2ガス供給時間(1回あたり):0.01〜0.3sec
成膜原料タンクの加温温度:130〜170℃
本実施形態によれば、下地膜202が形成されたウエハWにタングステン膜を成膜するにあたり、WCl6ガスに代表される塩化タングステンガスとH2ガスに代表される還元ガスとを用いてALD法またはそれに準じた方法により主タングステン膜204を成膜するに先立って、塩化タングステンガスの供給量を主タングステン膜成膜工程よりも低くしてALD法またはCVD法により初期タングステン膜203を成膜する。初期タングステン膜203を成膜する際の塩化タングステンガスの供給量が少ないので、初期タングステン膜203自体の下地膜202をエッチングする量が少なく、かつ、初期タングステン膜203が、塩化タングステンガスの供給量が多い主タングステン膜204を成膜する際における下地膜202に対する塩化タングステンガスのバリアとして機能する。このため、初期タングステン膜203により、下地膜202のエッチングを抑制することができる。したがって、デバイスの微細化により配線の低抵抗化のために下地膜202を薄膜化された場合や、デバイスの複雑化に対応して塩化タングステンガスの供給量が増加した場合でも、必要量の下地膜202を残存させて、良好な密着性を有するタングステン膜を良好な埋め込み性で成膜することができる。
以上、本発明の実施形態について説明したが、本発明は上記実施形態に限定されることなく種々変形可能である。例えば、上記実施形態では、被処理基板として半導体ウエハを例にとって説明したが、半導体ウエハはシリコンであっても、GaAs、SiC、GaNなどの化合物半導体でもよく、さらに、半導体ウエハに限定されず、液晶表示装置等のFPD(フラットパネルディスプレイ)に用いるガラス基板や、セラミック基板等にも本発明を適用することができる。
2;サセプタ
3;シャワーヘッド
4;排気部
5;ガス供給機構
6;制御部
51;WCl6ガス供給機構
52;第1H2ガス供給源
53;第2H2ガス供給源
54;第1N2ガス供給源
55;第2N2ガス供給源
61;WCl6ガス供給ライン
62;第1H2ガス供給ライン
63;第2H2ガス供給ライン
66;第1連続N2ガス供給ライン
67;第1フラッシュパージライン
68;第2連続N2ガス供給ライン
69;第2フラッシュパージライン
73,74,75,76,77,78,79,102,103;開閉バルブ
91;成膜原料タンク
100;成膜装置
101;エバック配管
W;半導体ウエハ
Claims (13)
- 減圧雰囲気下に保持されたチャンバー内に配置された、表面に下地膜が形成された被処理基板に対し、タングステン原料ガスとしての塩化タングステンガス、および塩化タングステンガスを還元する還元ガスを用いてタングステン膜を成膜する成膜方法であって、
前記塩化タングステンガスおよび前記還元ガスを、前記チャンバー内のパージを挟んでシーケンシャルに前記チャンバー内に供給して主タングステン膜を成膜する主タングステン膜成膜工程と、
前記主タングステン膜成膜工程に先立って、前記塩化タングステンガスの供給量を前記主タングステン膜成膜工程よりも少なくして、前記塩化タングステンガスおよび前記還元ガスをパージガスの供給を挟んでシーケンシャルに、または前記塩化タングステンガスおよび前記還元ガスを同時に前記チャンバー内に供給して、前記下地膜の上に初期タングステン膜を成膜する初期タングステン膜成膜工程と、
を有することを特徴とするタングステン膜の成膜方法。 - 前記初期タングステン膜を成膜する際の前記チャンバー内における前記塩化タングステンガスの分圧が1Torr以下になるように前記塩化タングステンガスを供給することを特徴とする請求項1に記載のタングステン膜の成膜方法。
- 前記塩化タングステンガスの分圧が0.1Torr以下であることを特徴とする請求項2に記載のタングステン膜の成膜方法。
- 前記初期タングステン膜を成膜する際に、前記塩化タングステンガスの供給量を設定値までランプアップすることを特徴とする請求項1から請求項3のいずれか1項に記載のタングステン膜の成膜方法。
- 前記初期タングステン膜の膜厚を1nm以上とすることを特徴とする請求項1から請求項4のいずれか1項に記載のタングステン膜の成膜方法。
- 前記初期タングステン膜の膜厚を、前記主タングステン膜を成膜する際の塩化タングステンガスの供給量に応じて変化させることを特徴とする請求項5に記載のタングステン膜の成膜方法。
- 前記初期タングステン膜は、塩化タングステンガスの供給量を異ならせて成膜した2段階以上の膜であることを特徴とする請求項1から請求項6のいずれか1項に記載のタングステン膜の成膜方法。
- 前記初期タングステン膜および前記主タングステン膜の成膜処理の際に、前記被処理基板の温度が300℃以上、前記チャンバー内の圧力が5Torr以上であることを特徴とする請求項1から請求項7のいずれか1項に記載のタングステン膜の成膜方法。
- 前記塩化タングステンは、WCl6、WCl5、WCl4のいずれかあることを特徴とする請求項1から請求項8のいずれか1項に記載のタングステン膜の成膜方法。
- 前記還元ガスは、H2ガス、SiH4ガス、B2H6ガス、NH3ガスの少なくとも1種であることを特徴とする請求項1から請求項9のいずれか1項に記載のタングステン膜の成膜方法。
- 前記下地膜の膜厚は5nm以下であることを特徴とする請求項1から請求項10のいずれか1項に記載のタングステン膜の成膜方法。
- 前記下地膜は、チタン系材料膜またはタングステン化合物膜を有することを特徴とする請求項1から請求項11のいずれか1項に記載のタングステン膜の成膜方法。
- コンピュータ上で動作し、成膜装置を制御するためのプログラムが記憶された記憶媒体であって、前記プログラムは、実行時に、請求項1から請求項12のいずれかのタングステン膜の成膜方法が行われるように、コンピュータに前記成膜装置を制御させることを特徴とする記憶媒体。
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US20160284553A1 (en) | 2016-09-29 |
CN106011777A (zh) | 2016-10-12 |
JP6416679B2 (ja) | 2018-10-31 |
KR20160115781A (ko) | 2016-10-06 |
US9640404B2 (en) | 2017-05-02 |
TW201701336A (zh) | 2017-01-01 |
TWI717341B (zh) | 2021-02-01 |
CN106011777B (zh) | 2019-04-12 |
KR101850201B1 (ko) | 2018-04-18 |
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