JP2016149404A - 半導体装置の製造方法および半導体装置 - Google Patents
半導体装置の製造方法および半導体装置 Download PDFInfo
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- JP2016149404A JP2016149404A JP2015024395A JP2015024395A JP2016149404A JP 2016149404 A JP2016149404 A JP 2016149404A JP 2015024395 A JP2015024395 A JP 2015024395A JP 2015024395 A JP2015024395 A JP 2015024395A JP 2016149404 A JP2016149404 A JP 2016149404A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 213
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 67
- 150000004767 nitrides Chemical class 0.000 claims abstract description 85
- 238000000034 method Methods 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000005530 etching Methods 0.000 claims abstract description 20
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims 1
- 230000004888 barrier function Effects 0.000 abstract description 75
- 239000013078 crystal Substances 0.000 abstract description 14
- 238000009413 insulation Methods 0.000 abstract 3
- 239000010410 layer Substances 0.000 description 300
- 239000010408 film Substances 0.000 description 242
- 229920002120 photoresistant polymer Polymers 0.000 description 27
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 17
- 239000011229 interlayer Substances 0.000 description 16
- 229910002601 GaN Inorganic materials 0.000 description 14
- 230000008569 process Effects 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- 238000005229 chemical vapour deposition Methods 0.000 description 10
- 239000007789 gas Substances 0.000 description 10
- 238000000206 photolithography Methods 0.000 description 10
- 230000005533 two-dimensional electron gas Effects 0.000 description 10
- 229910002704 AlGaN Inorganic materials 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000002955 isolation Methods 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 6
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 229910052735 hafnium Inorganic materials 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000006911 nucleation Effects 0.000 description 4
- 238000010899 nucleation Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 238000000927 vapour-phase epitaxy Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910003855 HfAlO Inorganic materials 0.000 description 1
- 229910004143 HfON Inorganic materials 0.000 description 1
- 229910004129 HfSiO Inorganic materials 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- CEPICIBPGDWCRU-UHFFFAOYSA-N [Si].[Hf] Chemical compound [Si].[Hf] CEPICIBPGDWCRU-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 150000001638 boron Chemical class 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013039 cover film Substances 0.000 description 1
- 238000010893 electron trap Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- -1 hafnium aluminate Chemical class 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 230000005527 interface trap Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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Abstract
Description
以下、図面を参照しながら本実施の形態の半導体装置について詳細に説明する。
図1は、本実施の形態の半導体装置の構成を示す断面図である。図2は、本実施の形態の半導体装置の溝部の近傍の構成を示す断面図である。図3および図4は、本実施の形態の半導体装置の構成を示す平面図である。図1の断面図は、例えば、図3のX方向の断面に対応する。
次いで、図5〜図17を参照しながら、本実施の形態の半導体装置の製造方法を説明するとともに、当該半導体装置の構成をより明確にする。図5〜図17は、本実施の形態の半導体装置の製造工程を示す断面図である。
上記形態(図1)においては、障壁層BA上に絶縁膜IFを配置したが、障壁層BAと絶縁膜IFとの間に、キャップ層Capを設けてもよい。図18は、本実施の形態の応用例の半導体装置の構成を示す断面図である。
本実施の形態においては、溝Tの側面に形成されるエピタキシャル再成長層EPの膜厚を、溝Tの底面に形成されるエピタキシャル再成長層EPの膜厚より小さくする。
図19は、本実施の形態の半導体装置の構成を示す断面図である。図20は、本実施の形態の半導体装置の溝部の近傍の構成を示す断面図である。
本実施の形態の半導体装置は、実施の形態1の場合と同様の工程で形成することができる。図21は、本実施の形態の半導体装置の製造工程を示す断面図である。
本実施の形態においては、絶縁膜IFの端部を、溝Tの端部から所定の距離だけ後退させている。
図22は、本実施の形態の半導体装置の構成を示す断面図である。図23は、本実施の形態の半導体装置の溝部の近傍の構成を示す断面図である。
図24〜図31は、本実施の形態の半導体装置の製造工程を示す断面図である。
本実施の形態においては、溝Tの形状例について説明する。
AC 活性領域
BA 障壁層
C チャネル
C1D コンタクトホール
C1S コンタクトホール
Cap キャップ層
CH チャネル層
CL 導電性膜
D 距離
DE ドレイン電極
DL ドレイン線
EP エピタキシャル再成長層
GE ゲート電極
GI ゲート絶縁膜
GL ゲート線
IF 絶縁膜
IFM 絶縁膜
IL1 層間絶縁膜
ISO 素子分離領域
Ld 距離
Ls 距離
OA 開口領域
OA1 開口領域
OA2 開口領域
PG プラグ
PR1 フォトレジスト膜
PR2 フォトレジスト膜
PR3 フォトレジスト膜
PR31 フォトレジスト膜
PR4 フォトレジスト膜
PRO 保護絶縁膜
S 基板
SE ソース電極
SL ソース線
T 溝
Claims (15)
- (a)基板の上方に、第1窒化物半導体層を形成する工程、
(b)前記第1窒化物半導体層上に、前記第1窒化物半導体層より電子親和力が小さい第2窒化物半導体層を形成する工程、
(c)前記第2窒化物半導体層の上方に、絶縁膜を形成する工程、
(d)前記絶縁膜、第2窒化物半導体層および第1窒化物半導体層をエッチングすることにより、前記絶縁膜および前記第2窒化物半導体層を貫通し、前記第1窒化物半導体層の途中まで到達する溝を形成する工程、
(e)前記溝の側面および底面上に、エピタキシャル成長法を用いて第3窒化物半導体層を形成する工程、
(f)前記第3窒化物半導体層上にゲート絶縁膜を形成する工程、
(g)前記ゲート絶縁膜上にゲート電極を形成する工程、
を有する、半導体装置の製造方法。 - 請求項1記載の半導体装置の製造方法において、
前記(e)工程で形成される前記第3窒化物半導体層の、前記溝の側面上の膜厚は、前記溝の底面上の膜厚より小さい、半導体装置の製造方法。 - 請求項1記載の半導体装置の製造方法において、
前記(b)工程と前記(c)工程の間に、
(h)前記第2窒化物半導体層上に、前記第2窒化物半導体層より電子親和力が大きい第4窒化物半導体層を形成する工程、を有し、
前記(d)工程は、前記絶縁膜、前記第4窒化物半導体層、第2窒化物半導体層および第1窒化物半導体層をエッチングすることにより、前記絶縁膜、前記第4窒化物半導体層および前記第2窒化物半導体層を貫通し、前記第1窒化物半導体層の途中まで到達する前記溝を形成する工程、である、半導体装置の製造方法。 - 請求項1記載の半導体装置の製造方法において、
前記(d)工程と前記(e)工程の間に、
(i)前記絶縁膜のうち、前記溝の外周部の前記絶縁膜をエッチングすることにより、前記絶縁膜の端部を前記溝の端部から前記溝の外側の方向に後退させる工程、を有し、
前記(e)工程の前記第3窒化物半導体層は、前記絶縁膜の後退部から露出した前記第2窒化物半導体層上にも形成される、半導体装置の製造方法。 - 請求項1記載の半導体装置の製造方法において、
前記(d)工程の前記溝の側面の少なくとも一部は、傾斜している、半導体装置の製造方法。 - 請求項5記載の半導体装置の製造方法において、
前記溝の側面のうち、前記第2窒化物半導体層の側面の傾斜角度と、前記第1窒化物半導体層の側面の傾斜角度とが、異なる、半導体装置の製造方法。 - 請求項6記載の半導体装置の製造方法において、
前記第2窒化物半導体層の側面の傾斜角度は、前記第1窒化物半導体層の側面の傾斜角度より大きい、半導体装置の製造方法。 - 請求項1記載の半導体装置の製造方法において、
前記第3窒化物半導体層の膜厚は、10nm以下である、半導体装置の製造方法。 - 基板の上方に形成された第1窒化物半導体層と、
前記第1窒化物半導体層上に形成され、前記第1窒化物半導体層より電子親和力が小さい第2窒化物半導体層と、
前記第2窒化物半導体層の上方に形成された絶縁膜と、
前記絶縁膜および前記第2窒化物半導体層を貫通し、前記第1窒化物半導体層の途中まで到達する溝と、
前記溝の側面および底面上に形成された第3窒化物半導体層と、
前記第3窒化物半導体層上に、ゲート絶縁膜を介して形成されたゲート電極と、
を有し、
前記第3窒化物半導体層は、エピタキシャル成長層である、半導体装置。 - 請求項9記載の半導体装置において、
前記溝の側面上に形成された前記第3窒化物半導体層の膜厚は、前記溝の底面上に形成された前記第3窒化物半導体層の膜厚より小さい、半導体装置。 - 請求項9記載の半導体装置において、
前記第2窒化物半導体層上に形成され、前記第2窒化物半導体層より電子親和力が大きい第4窒化物半導体層を有し、
前記溝は、絶縁膜、前記第4窒化物半導体層および前記第2窒化物半導体層を貫通し、前記第1窒化物半導体層の途中まで到達する、半導体装置。 - 請求項9記載の半導体装置において、
前記絶縁膜の端部は、前記溝の端部から前記溝の外側の方向に後退しており、
前記第3窒化物半導体層は、前記絶縁膜の後退部から露出した前記第2窒化物半導体層上にも形成されている、半導体装置。 - 請求項9記載の半導体装置において、
前記溝の側面の少なくとも一部は、傾斜している、半導体装置。 - 請求項13記載の半導体装置において、
前記溝の側面のうち、前記第2窒化物半導体層の側面の傾斜角度と、前記第1窒化物半導体層の側面の傾斜角度とが、異なる、半導体装置。 - 請求項14記載の半導体装置において、
前記第2窒化物半導体層の側面の傾斜角度は、前記第1窒化物半導体層の側面の傾斜角度より大きい、半導体装置。
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