JP2016119415A - 半導体装置及び半導体装置の製造方法 - Google Patents
半導体装置及び半導体装置の製造方法 Download PDFInfo
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
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- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
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- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
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- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
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- H01L2224/808—Bonding techniques
- H01L2224/80894—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
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- H01L2924/156—Material
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- Manufacturing & Machinery (AREA)
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- Pressure Welding/Diffusion-Bonding (AREA)
Abstract
Description
11 真空チャンバ
12 上側ステージ
12A 静電チャック
12B 圧接機構
13 下側ステージ
14,15 高速原子ビーム源
14a,15a アルゴンビーム
17 第1ウェハ(基板)
17A 表面(接合面)
18 第2ウェハ(基板)
18A 表面(接合面)
20 半導体装置
21,121 第1半導体基材
22,122 第1絶縁層(絶縁材)
23,123 第1接合電極(導電材)
24,124 第2半導体基材
25,125 第2絶縁層(絶縁材)
26,126 第2接合電極(導電材)
30 接合中間層
31 ベアウェハ
40 成膜チャンバ
122A 表面
123A 表面
125A 表面
126A 表面
Claims (9)
- 半導体基材の接合面に導電材及び絶縁材がそれぞれ露出した一対の基板を備え、前記基板同士を常温接合した半導体装置であって、
一対の前記接合面の間に、単独では非導電性を示すと共に前記導電材と結合して導電性を示す接合中間層を備えることを特徴とする半導体装置。 - 前記基板の前記絶縁材同士は、前記接合中間層を介して接合されることを特徴とする請求項1に記載の半導体装置。
- 前記接合中間層は、非晶質半導体材料で形成されることを特徴とする請求項1または2に記載の半導体装置。
- 少なくとも一方の基板は、前記接合面における前記絶縁材の高さ位置が前記導電材よりも低く形成されることを特徴とする請求項1から3のいずれか一項に記載の半導体装置。
- 半導体基材の接合面に導電材及び絶縁材がそれぞれ露出した一対の基板同士を常温接合して製造した半導体装置の製造方法であって、
前記基板の接合面をそれぞれ活性化させる工程と、
活性化された前記接合面の少なくとも一方に、単独では非導電性を示すと共に前記導電材と結合して導電性を示す接合中間層を形成する工程と、
前記接合中間層を介して、一対の前記基板同士を圧接する工程と、を備えたことを特徴とする半導体装置の製造方法。 - 前記接合中間層は、半導体材料の蒸着やスパッタリング、または、化学気相成長により形成されることを特徴とする請求項5に記載の半導体装置の製造方法。
- 半導体材料に高速原子ビームを照射して、前記半導体材料をスパッタリングすることにより、一方の前記基板の接合面に前記接合中間層を形成した後、該接合面に形成された接合中間層に高速原子ビームを照射して、該接合中間層を形成する前記半導体材料の一部をスパッタリングすることにより、他方の前記基板の接合面に前記接合中間層を形成することを特徴とする請求項5または6に記載の半導体装置の製造方法。
- 少なくとも一方の前記基板は、前記接合面における前記絶縁材の高さ位置が前記導電材よりも低く形成され、前記接合中間層は、前記基板同士を圧接する際に前記導電材により破断され、該導電材同士が直接的に接合されることを特徴とする請求項5から7のいずれか一項に記載の半導体装置の製造方法。
- 一対の前記基板を圧接した後に、該基板を所定の温度で加熱する工程を備えたことを特徴とする請求項5から8のいずれか一項に記載の半導体装置の製造方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014259115A JP6165127B2 (ja) | 2014-12-22 | 2014-12-22 | 半導体装置及び半導体装置の製造方法 |
PCT/JP2015/078518 WO2016103846A1 (ja) | 2014-12-22 | 2015-10-07 | 半導体装置及び半導体装置の製造方法 |
EP15872415.3A EP3240015B1 (en) | 2014-12-22 | 2015-10-07 | Semiconductor device and semiconductor device manufacturing method |
KR1020177017033A KR101994011B1 (ko) | 2014-12-22 | 2015-10-07 | 반도체 장치 및 반도체 장치의 제조 방법 |
US15/537,646 US10486263B2 (en) | 2014-12-22 | 2015-10-07 | Room-temperature-bonded semiconductor device and manufacturing method of room-temperature-bonded semiconductor device |
CN201580069954.0A CN107112199B (zh) | 2014-12-22 | 2015-10-07 | 半导体装置及半导体装置的制造方法 |
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FR3134227A1 (fr) * | 2022-04-04 | 2023-10-06 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procédé de collage d’un premier substrat au niveau d’une surface présentant une nanotopologie élastique |
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