JP2016103632A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2016103632A5 JP2016103632A5 JP2015220973A JP2015220973A JP2016103632A5 JP 2016103632 A5 JP2016103632 A5 JP 2016103632A5 JP 2015220973 A JP2015220973 A JP 2015220973A JP 2015220973 A JP2015220973 A JP 2015220973A JP 2016103632 A5 JP2016103632 A5 JP 2016103632A5
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- neon
- processing chamber
- helium
- etchant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/539,121 US9609730B2 (en) | 2014-11-12 | 2014-11-12 | Adjustment of VUV emission of a plasma via collisional resonant energy transfer to an energy absorber gas |
| US14/539,121 | 2014-11-12 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016103632A JP2016103632A (ja) | 2016-06-02 |
| JP2016103632A5 true JP2016103632A5 (cg-RX-API-DMAC7.html) | 2018-12-20 |
| JP6758818B2 JP6758818B2 (ja) | 2020-09-23 |
Family
ID=55913372
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015220973A Active JP6758818B2 (ja) | 2014-11-12 | 2015-11-11 | エネルギー吸収体ガスへの衝突共鳴エネルギー伝達によるプラズマのｖｕｖ放出の調節 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US9609730B2 (cg-RX-API-DMAC7.html) |
| JP (1) | JP6758818B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR20160056839A (cg-RX-API-DMAC7.html) |
| CN (1) | CN105590826B (cg-RX-API-DMAC7.html) |
| TW (1) | TWI690241B (cg-RX-API-DMAC7.html) |
Families Citing this family (44)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12444651B2 (en) | 2009-08-04 | 2025-10-14 | Novellus Systems, Inc. | Tungsten feature fill with nucleation inhibition |
| US8617411B2 (en) * | 2011-07-20 | 2013-12-31 | Lam Research Corporation | Methods and apparatus for atomic layer etching |
| KR102306612B1 (ko) | 2014-01-31 | 2021-09-29 | 램 리써치 코포레이션 | 진공-통합된 하드마스크 프로세스 및 장치 |
| KR102352739B1 (ko) * | 2014-04-09 | 2022-01-17 | 어플라이드 머티어리얼스, 인코포레이티드 | 개선된 유동 균일성/가스 컨덕턴스로 가변 프로세스 볼륨을 처리하기 위한 대칭적 챔버 본체 설계 아키텍처 |
| US9870899B2 (en) * | 2015-04-24 | 2018-01-16 | Lam Research Corporation | Cobalt etch back |
| US10020264B2 (en) * | 2015-04-28 | 2018-07-10 | Infineon Technologies Ag | Integrated circuit substrate and method for manufacturing the same |
| US9972504B2 (en) | 2015-08-07 | 2018-05-15 | Lam Research Corporation | Atomic layer etching of tungsten for enhanced tungsten deposition fill |
| WO2017052905A1 (en) * | 2015-09-22 | 2017-03-30 | Applied Materials, Inc. | Apparatus and method for selective deposition |
| US10727073B2 (en) | 2016-02-04 | 2020-07-28 | Lam Research Corporation | Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfaces |
| KR20170122910A (ko) * | 2016-04-27 | 2017-11-07 | 성균관대학교산학협력단 | 원자층 식각방법 |
| US10269566B2 (en) | 2016-04-29 | 2019-04-23 | Lam Research Corporation | Etching substrates using ale and selective deposition |
| US10566212B2 (en) | 2016-12-19 | 2020-02-18 | Lam Research Corporation | Designer atomic layer etching |
| US10559461B2 (en) | 2017-04-19 | 2020-02-11 | Lam Research Corporation | Selective deposition with atomic layer etch reset |
| US10832909B2 (en) | 2017-04-24 | 2020-11-10 | Lam Research Corporation | Atomic layer etch, reactive precursors and energetic sources for patterning applications |
| US10494715B2 (en) | 2017-04-28 | 2019-12-03 | Lam Research Corporation | Atomic layer clean for removal of photoresist patterning scum |
| US10796912B2 (en) * | 2017-05-16 | 2020-10-06 | Lam Research Corporation | Eliminating yield impact of stochastics in lithography |
| US9991129B1 (en) * | 2017-05-23 | 2018-06-05 | Applied Materials, Inc. | Selective etching of amorphous silicon over epitaxial silicon |
| SG11202004968SA (en) | 2017-12-15 | 2020-07-29 | Tokyo Electron Ltd | Plasma etching method and plasma etching apparatus |
| WO2019190781A1 (en) | 2018-03-30 | 2019-10-03 | Lam Research Corporation | Atomic layer etching and smoothing of refractory metals and other high surface binding energy materials |
| US11062887B2 (en) * | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
| WO2020102085A1 (en) | 2018-11-14 | 2020-05-22 | Lam Research Corporation | Methods for making hard masks useful in next-generation lithography |
| CN111436219B (zh) * | 2018-11-14 | 2023-09-19 | 株式会社日立高新技术 | 等离子处理装置以及利用其的被处理样品的处理方法 |
| US20220005740A1 (en) * | 2018-11-15 | 2022-01-06 | Lam Research Corporation | Atomic layer etch systems for selectively etching with halogen-based compounds |
| KR102731166B1 (ko) | 2018-12-20 | 2024-11-18 | 램 리써치 코포레이션 | 레지스트들의 건식 현상 (dry development) |
| US12125711B2 (en) | 2019-03-18 | 2024-10-22 | Lam Research Corporation | Reducing roughness of extreme ultraviolet lithography resists |
| KR102809999B1 (ko) * | 2019-04-01 | 2025-05-19 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자를 제조하는 방법 |
| CN113785381B (zh) | 2019-04-30 | 2025-04-22 | 朗姆研究公司 | 用于极紫外光刻抗蚀剂改善的原子层蚀刻及选择性沉积处理 |
| TWI837391B (zh) | 2019-06-26 | 2024-04-01 | 美商蘭姆研究公司 | 利用鹵化物化學品的光阻顯影 |
| DE102019214074A1 (de) * | 2019-09-16 | 2021-03-18 | Robert Bosch Gmbh | Verfahren und Vorrichtung zum lokalen Entfernen und/oder Modifizieren eines Polymermaterials auf einer Oberfläche |
| KR102746578B1 (ko) | 2020-01-15 | 2024-12-26 | 램 리써치 코포레이션 | 포토레지스트 부착 및 선량 감소를 위한 하부층 |
| CN111370308B (zh) * | 2020-02-18 | 2023-03-21 | 中国科学院微电子研究所 | 一种刻蚀方法及系统、刻蚀控制装置、电子器件及设备 |
| US12261044B2 (en) | 2020-02-28 | 2025-03-25 | Lam Research Corporation | Multi-layer hardmask for defect reduction in EUV patterning |
| CN115362414A (zh) | 2020-04-03 | 2022-11-18 | 朗姆研究公司 | 用于增强euv光刻性能的暴露前光致抗蚀剂固化 |
| US11538714B2 (en) | 2020-05-21 | 2022-12-27 | Applied Materials, Inc. | System apparatus and method for enhancing electrical clamping of substrates using photo-illumination |
| US11315819B2 (en) * | 2020-05-21 | 2022-04-26 | Applied Materials, Inc. | System apparatus and method for enhancing electrical clamping of substrates using photo-illumination |
| US11875967B2 (en) | 2020-05-21 | 2024-01-16 | Applied Materials, Inc. | System apparatus and method for enhancing electrical clamping of substrates using photo-illumination |
| KR102781895B1 (ko) | 2020-07-07 | 2025-03-18 | 램 리써치 코포레이션 | 방사선 포토레지스트 패터닝을 패터닝하기 위한 통합된 건식 프로세스 |
| CN111994868B (zh) * | 2020-08-12 | 2022-05-17 | 天津大学 | 极紫外光与等离子体复合原子尺度加工方法 |
| CN115152008A (zh) | 2020-11-13 | 2022-10-04 | 朗姆研究公司 | 用于干法去除光致抗蚀剂的处理工具 |
| CN112509901B (zh) * | 2020-11-19 | 2022-03-22 | 北京北方华创微电子装备有限公司 | 工艺腔室及半导体工艺设备 |
| CN114843164A (zh) * | 2021-02-02 | 2022-08-02 | 中微半导体设备(上海)股份有限公司 | 升降销固定器、升降销组件及等离子体处理装置 |
| US20220293587A1 (en) * | 2021-03-11 | 2022-09-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods for reduction of photoresist defect |
| US11502217B1 (en) * | 2021-05-24 | 2022-11-15 | Gautam Ganguly | Methods and apparatus for reducing as-deposited and metastable defects in Amorphousilicon |
| KR102730643B1 (ko) * | 2021-12-17 | 2024-11-14 | 세메스 주식회사 | 공정 가스 공급 유닛 및 이를 포함하는 기판 처리 장치 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0629255A (ja) * | 1992-07-10 | 1994-02-04 | Hitachi Sci Syst:Kk | プラズマエッチング方法及び装置 |
| US5948704A (en) | 1996-06-05 | 1999-09-07 | Lam Research Corporation | High flow vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support |
| US6461529B1 (en) * | 1999-04-26 | 2002-10-08 | International Business Machines Corporation | Anisotropic nitride etch process with high selectivity to oxide and photoresist layers in a damascene etch scheme |
| US7160671B2 (en) * | 2001-06-27 | 2007-01-09 | Lam Research Corporation | Method for argon plasma induced ultraviolet light curing step for increasing silicon-containing photoresist selectivity |
| US7517814B2 (en) * | 2005-03-30 | 2009-04-14 | Tokyo Electron, Ltd. | Method and system for forming an oxynitride layer by performing oxidation and nitridation concurrently |
| US7740736B2 (en) | 2006-06-08 | 2010-06-22 | Lam Research Corporation | Methods and apparatus for preventing plasma un-confinement events in a plasma processing chamber |
| US7732728B2 (en) | 2007-01-17 | 2010-06-08 | Lam Research Corporation | Apparatuses for adjusting electrode gap in capacitively-coupled RF plasma reactor |
| WO2009099660A2 (en) * | 2008-02-08 | 2009-08-13 | Lam Research Corporation | Adjustable gap capacitively coupled rf plasma reactor including lateral bellows and non-contact particle seal |
| KR101353012B1 (ko) * | 2009-11-17 | 2014-01-22 | 가부시키가이샤 히다치 하이테크놀로지즈 | 시료 처리 장치, 시료 처리 시스템 및 시료의 처리 방법 |
| US20110139748A1 (en) * | 2009-12-15 | 2011-06-16 | University Of Houston | Atomic layer etching with pulsed plasmas |
| US8877080B2 (en) * | 2010-10-18 | 2014-11-04 | Tokyo Electron Limited | Using vacuum ultra-violet (VUV) data in microwave sources |
| JP2012149278A (ja) * | 2011-01-17 | 2012-08-09 | Mitsui Chemicals Inc | シリコン含有膜の製造方法 |
| US8617411B2 (en) * | 2011-07-20 | 2013-12-31 | Lam Research Corporation | Methods and apparatus for atomic layer etching |
| US9362133B2 (en) | 2012-12-14 | 2016-06-07 | Lam Research Corporation | Method for forming a mask by etching conformal film on patterned ashable hardmask |
-
2014
- 2014-11-12 US US14/539,121 patent/US9609730B2/en active Active
-
2015
- 2015-11-11 JP JP2015220973A patent/JP6758818B2/ja active Active
- 2015-11-11 TW TW104137092A patent/TWI690241B/zh active
- 2015-11-12 KR KR1020150158854A patent/KR20160056839A/ko not_active Withdrawn
- 2015-11-12 CN CN201510776969.2A patent/CN105590826B/zh active Active
-
2017
- 2017-02-14 US US15/432,689 patent/US20170170036A1/en not_active Abandoned
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2016103632A5 (cg-RX-API-DMAC7.html) | ||
| KR102426264B1 (ko) | 에칭 방법 | |
| JP6758818B2 (ja) | エネルギー吸収体ガスへの衝突共鳴エネルギー伝達によるプラズマのｖｕｖ放出の調節 | |
| JP6068171B2 (ja) | 試料の処理方法および試料処理装置 | |
| JP5038151B2 (ja) | 基板最適化のためのプラズマ処理ステップ交互実行方法及び装置 | |
| CN107438892B (zh) | 等离子处理方法以及等离子处理装置 | |
| US9390935B2 (en) | Etching method | |
| KR102260339B1 (ko) | 반도체 장치의 제조 방법 | |
| US20170330759A1 (en) | Etching method | |
| JP2016208027A5 (ja) | チェンバ内で基板を処理する方法およびその装置 | |
| KR20120024544A (ko) | 펄스형 플라즈마를 사용한 원자층 에칭 | |
| EP3086358A1 (en) | Method of etching porous film | |
| US10192750B2 (en) | Plasma processing method | |
| JP2015119119A (ja) | 基板処理方法および基板処理装置 | |
| KR102245903B1 (ko) | 플라즈마 처리 장치의 클리닝 방법 및 플라즈마 처리 장치 | |
| JP2013229454A (ja) | 膜厚モニタを有するｖｕｖ処理装置および処理方法 | |
| JP2014072269A5 (cg-RX-API-DMAC7.html) | ||
| US20160211145A1 (en) | Method for etching group iii-v semiconductor and apparatus for etching the same | |
| JP2014072269A (ja) | プラズマエッチングの終点検出方法 | |
| JP6179937B2 (ja) | プラズマエッチング装置及びプラズマエッチング方法 | |
| JP6842699B2 (ja) | プラズマ処理検知用組成物及びそれを用いたプラズマ処理検知インジケータ | |
| US8784677B2 (en) | Plasma processing apparatus and plasma processing method | |
| JP2014225561A5 (cg-RX-API-DMAC7.html) | ||
| JP2006049771A (ja) | エッチングガス，エッチング方法及びエッチングガスの評価方法 | |
| JP2017084938A (ja) | 被処理体を処理する方法 |