JP2016100462A - 成膜装置 - Google Patents
成膜装置 Download PDFInfo
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- JP2016100462A JP2016100462A JP2014236363A JP2014236363A JP2016100462A JP 2016100462 A JP2016100462 A JP 2016100462A JP 2014236363 A JP2014236363 A JP 2014236363A JP 2014236363 A JP2014236363 A JP 2014236363A JP 2016100462 A JP2016100462 A JP 2016100462A
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- heat insulating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Abstract
【解決手段】
一実施形態の成膜装置では、回転ステージに回転軸が接続されている。この成膜装置では、複数のウエハが、回転軸の中心軸線に対して周方向に配列された複数の載置領域に載置されて、回転ステージによって保持される。回転ステージは、サセプタの内部空間に収容されている。この内部空間内において、ガス供給機構が、回転ステージの外側から中心軸線に直交する方向に沿った処理ガスの流れを形成する。また、断熱材が、サセプタの内部空間内の断熱領域に設けられている。断熱領域は、中心軸線に最も近い複数の載置領域内の位置よりも当該中心軸線に対して外側、且つ、中心軸線から最も遠い複数の載置領域内の位置よりも当該中心軸線に対して内側に位置する。
【選択図】図3
Description
Claims (4)
- 回転軸と、
前記回転軸に接続された回転ステージであり、前記回転軸の中心軸線に対して周方向に配列された複数の載置領域において複数のウエハを保持するように構成された、該回転ステージと、
前記回転ステージをその内部空間に収容するよう構成されたサセプタと、
前記内部空間において、前記回転ステージの外側から前記中心軸線に対して直交する方向に沿った処理ガスの流れを形成するよう構成されたガス供給機構と、
前記サセプタを収容する容器と、
前記サセプタを覆うように前記容器と前記サセプタとの間に設けられた第1の断熱材と、
前記内部空間内に設けられた第2の断熱材であり、前記中心軸線に最も近い前記複数の載置領域内の位置よりも前記中心軸線に対して外側、且つ、前記中心軸線から最も遠い前記複数の載置領域内の位置よりも前記中心軸線に対して内側に位置する断熱領域に設けられた第2の断熱材と、
を備える成膜装置。 - 前記回転ステージは、その上に前記複数のウエハを保持する第1面と該第1面と反対側の第2面とを有し、
前記第2の断熱材は、前記第2面と前記サセプタとの間に設けられている、
請求項1に記載の成膜装置。 - 前記第2の断熱材は前記断熱領域において延在する環状板形状を有する、請求項1又は2に記載の成膜装置。
- 前記回転ステージ上に搭載されるホルダを更に備え、
前記ホルダは前記複数の載置領域を提供する、
請求項1〜3の何れか一項に記載の成膜装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014236363A JP6393161B2 (ja) | 2014-11-21 | 2014-11-21 | 成膜装置 |
CN201580062668.1A CN107004582B (zh) | 2014-11-21 | 2015-11-09 | 成膜装置 |
US15/527,631 US10550491B2 (en) | 2014-11-21 | 2015-11-09 | Film-forming apparatus |
EP15861765.4A EP3223301B1 (en) | 2014-11-21 | 2015-11-09 | Film-forming apparatus |
PCT/JP2015/081488 WO2016080230A1 (ja) | 2014-11-21 | 2015-11-09 | 成膜装置 |
TW104137172A TWI682437B (zh) | 2014-11-21 | 2015-11-11 | 成膜裝置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014236363A JP6393161B2 (ja) | 2014-11-21 | 2014-11-21 | 成膜装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016100462A true JP2016100462A (ja) | 2016-05-30 |
JP6393161B2 JP6393161B2 (ja) | 2018-09-19 |
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Application Number | Title | Priority Date | Filing Date |
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JP2014236363A Active JP6393161B2 (ja) | 2014-11-21 | 2014-11-21 | 成膜装置 |
Country Status (6)
Country | Link |
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US (1) | US10550491B2 (ja) |
EP (1) | EP3223301B1 (ja) |
JP (1) | JP6393161B2 (ja) |
CN (1) | CN107004582B (ja) |
TW (1) | TWI682437B (ja) |
WO (1) | WO2016080230A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019116907A1 (ja) | 2017-12-13 | 2019-06-20 | 東京エレクトロン株式会社 | 成膜装置 |
WO2020105212A1 (ja) * | 2018-11-20 | 2020-05-28 | 住友電気工業株式会社 | 炭化珪素エピタキシャル基板の製造装置 |
WO2020158656A1 (ja) | 2019-02-01 | 2020-08-06 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
KR20200128566A (ko) | 2018-03-26 | 2020-11-13 | 도쿄엘렉트론가부시키가이샤 | 성막 장치 및 성막 방법 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20130107001A (ko) * | 2012-03-21 | 2013-10-01 | 엘지이노텍 주식회사 | 증착 장치 |
KR101696539B1 (ko) * | 2015-03-09 | 2017-01-16 | 한양대학교 산학협력단 | 박막, 그 제조 방법, 및 그 제조 장치 |
JP7325350B2 (ja) * | 2020-02-03 | 2023-08-14 | 東京エレクトロン株式会社 | 成膜装置 |
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JP2014027028A (ja) | 2012-07-25 | 2014-02-06 | Mitsubishi Electric Corp | SiCエピタキシャル基板製造装置、SiCエピタキシャル基板の製造方法、SiCエピタキシャル基板 |
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2014
- 2014-11-21 JP JP2014236363A patent/JP6393161B2/ja active Active
-
2015
- 2015-11-09 WO PCT/JP2015/081488 patent/WO2016080230A1/ja active Application Filing
- 2015-11-09 CN CN201580062668.1A patent/CN107004582B/zh active Active
- 2015-11-09 EP EP15861765.4A patent/EP3223301B1/en active Active
- 2015-11-09 US US15/527,631 patent/US10550491B2/en active Active
- 2015-11-11 TW TW104137172A patent/TWI682437B/zh active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2006514159A (ja) * | 2003-02-06 | 2006-04-27 | ユージン テクノロジー カンパニー リミテッド | 薄膜を製造するための化学的気相蒸着装置のヒータ |
JP2009071122A (ja) * | 2007-09-14 | 2009-04-02 | Sumitomo Electric Ind Ltd | 半導体装置の製造装置および製造方法 |
JP2009212506A (ja) * | 2008-02-05 | 2009-09-17 | Tokyo Electron Ltd | 加熱装置及び加熱方法 |
JP2012174731A (ja) * | 2011-02-17 | 2012-09-10 | Taiyo Nippon Sanso Corp | 気相成長方法、及び気相成長方法により形成された化合物半導体膜 |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019116907A1 (ja) | 2017-12-13 | 2019-06-20 | 東京エレクトロン株式会社 | 成膜装置 |
KR20200094778A (ko) | 2017-12-13 | 2020-08-07 | 도쿄엘렉트론가부시키가이샤 | 성막 장치 |
KR20220061269A (ko) | 2017-12-13 | 2022-05-12 | 도쿄엘렉트론가부시키가이샤 | 성막 장치 |
KR20200128566A (ko) | 2018-03-26 | 2020-11-13 | 도쿄엘렉트론가부시키가이샤 | 성막 장치 및 성막 방법 |
WO2020105212A1 (ja) * | 2018-11-20 | 2020-05-28 | 住友電気工業株式会社 | 炭化珪素エピタキシャル基板の製造装置 |
WO2020158656A1 (ja) | 2019-02-01 | 2020-08-06 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
KR20210113383A (ko) | 2019-02-01 | 2021-09-15 | 도쿄엘렉트론가부시키가이샤 | 성막 방법 및 성막 장치 |
Also Published As
Publication number | Publication date |
---|---|
US20170321346A1 (en) | 2017-11-09 |
EP3223301B1 (en) | 2021-04-14 |
CN107004582A (zh) | 2017-08-01 |
US10550491B2 (en) | 2020-02-04 |
EP3223301A4 (en) | 2018-07-25 |
JP6393161B2 (ja) | 2018-09-19 |
WO2016080230A1 (ja) | 2016-05-26 |
TW201633378A (zh) | 2016-09-16 |
TWI682437B (zh) | 2020-01-11 |
EP3223301A1 (en) | 2017-09-27 |
CN107004582B (zh) | 2020-05-29 |
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