JP2016094648A - 封止膜の形成方法および封止膜 - Google Patents
封止膜の形成方法および封止膜 Download PDFInfo
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- JP2016094648A JP2016094648A JP2014232014A JP2014232014A JP2016094648A JP 2016094648 A JP2016094648 A JP 2016094648A JP 2014232014 A JP2014232014 A JP 2014232014A JP 2014232014 A JP2014232014 A JP 2014232014A JP 2016094648 A JP2016094648 A JP 2016094648A
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- 238000007789 sealing Methods 0.000 title claims abstract description 59
- 238000000034 method Methods 0.000 title claims abstract description 30
- 239000000463 material Substances 0.000 claims abstract description 92
- 230000004888 barrier function Effects 0.000 claims abstract description 77
- 230000015572 biosynthetic process Effects 0.000 claims description 44
- 239000000758 substrate Substances 0.000 claims description 31
- 239000002994 raw material Substances 0.000 claims description 11
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 238000000151 deposition Methods 0.000 abstract description 8
- 238000005137 deposition process Methods 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 188
- 239000007789 gas Substances 0.000 description 43
- 239000010409 thin film Substances 0.000 description 29
- 238000005192 partition Methods 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 8
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 7
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 6
- 230000008021 deposition Effects 0.000 description 4
- 239000002985 plastic film Substances 0.000 description 4
- 229920006255 plastic film Polymers 0.000 description 4
- 238000011144 upstream manufacturing Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 230000033001 locomotion Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Laminated Bodies (AREA)
- Formation Of Insulating Films (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
2 基材
3 搬送ロール
4 搬送ロール
5 メインロール
6 メインロールチャンバ
7 成膜チャンバ
7a 第1成膜チャンバ
7b 第2成膜チャンバ
31 芯部
41 芯部
51 外周面
61 真空ポンプ
62 間仕切り部
71 真空ポンプ
71a 真空ポンプ
71b 真空ポンプ
72 プラズマ電極
72a プラズマ電極
72b プラズマ電極
73 原料ガス配管
73a 原料ガス配管
73b 原料ガス配管
M1 バッファ層
M1a 第1のバッファ層
M1b 第2のバッファ層
M2 バリア層
Claims (3)
- 基材上にバッファ層と当該バッファ層より密度が高いバリア層とを交互に成膜して封止膜を形成する封止膜の形成方法であり、
基材の表面に前記バッファ層を成膜させる第1のバッファ層成膜工程と、
前記第1のバッファ層形成工程で成膜させた前記バッファ層である第1のバッファ層の表面に前記バリア層を成膜させる第1のバリア層成膜工程と、
前記第1のバリア層形成工程で成膜させた前記バリア層である第1のバリア層の表面に前記バッファ層を成膜させる第2のバッファ層成膜工程と、
を有し、
前記第1のバッファ層における基材の厚み方向に成膜された部分の膜厚に対する当該厚み方向に対して傾斜した方向に成膜された部分の膜厚の比率は、前記第2のバッファ層形成工程で成膜させた前記バッファ層である第2のバッファ層における前記厚み方向に成膜された部分の膜厚に対する前記厚み方向に対して傾斜した方向に成膜された部分の膜厚の比率よりも1に近いことを特徴とする、封止膜の形成方法。 - 前記バッファ層および前記バリア層はCVD法により成膜され、前記第1のバッファ層成膜工程における成膜圧力は前記第2のバッファ層成膜工程における成膜圧力よりも高いことを特徴とする、請求項1に記載の封止膜の形成方法。
- 基材上にバッファ層と当該バッファ層より密度が高いバリア層とが交互に成膜されて形成された封止膜であり、
基材の表面に成膜された前記バッファ層である第1のバッファ層と、
前記第1のバッファ層の表面に成膜された前記バリア層である第1のバリア層と、
前記第1のバリア層の表面に前記第1のバッファ層と同じ原料を用いて成膜された前記バッファ層である第2のバッファ層と、
を有し、
前記第1のバッファ層における基材の厚み方向に成膜された部分の膜厚に対する当該厚み方向に対して傾斜した方向に成膜された部分の膜厚の比率は、前記第2のバッファ層における前記厚み方向に成膜された部分の膜厚に対する前記厚み方向に対して傾斜した方向に成膜された部分の膜厚の比率よりも1に近いことを特徴とする、封止膜。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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JP2014232014A JP6587384B2 (ja) | 2014-11-14 | 2014-11-14 | 封止膜の形成方法および封止膜 |
US15/510,845 US10793952B2 (en) | 2014-11-14 | 2015-10-29 | Method for forming sealing film, and sealing film |
CN201580048757.0A CN107075680B (zh) | 2014-11-14 | 2015-10-29 | 密封膜的形成方法和密封膜 |
PCT/JP2015/080475 WO2016076119A1 (ja) | 2014-11-14 | 2015-10-29 | 封止膜の形成方法および封止膜 |
KR1020177006720A KR102360686B1 (ko) | 2014-11-14 | 2015-10-29 | 밀봉막의 형성 방법 및 밀봉막 |
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JP2014232014A JP6587384B2 (ja) | 2014-11-14 | 2014-11-14 | 封止膜の形成方法および封止膜 |
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JP2016094648A true JP2016094648A (ja) | 2016-05-26 |
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US (1) | US10793952B2 (ja) |
JP (1) | JP6587384B2 (ja) |
KR (1) | KR102360686B1 (ja) |
CN (1) | CN107075680B (ja) |
WO (1) | WO2016076119A1 (ja) |
Cited By (1)
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JP2020158860A (ja) * | 2019-03-28 | 2020-10-01 | 東レエンジニアリング株式会社 | 成膜装置、及び成膜方法 |
Citations (2)
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JPH05335299A (ja) * | 1992-05-29 | 1993-12-17 | Kawasaki Steel Corp | 半導体装置の製造方法 |
JPH07130731A (ja) * | 1993-10-29 | 1995-05-19 | Nec Corp | 半導体装置ならびにその製造方法および製造装置 |
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US5985759A (en) * | 1998-02-24 | 1999-11-16 | Applied Materials, Inc. | Oxygen enhancement of ion metal plasma (IMP) sputter deposited barrier layers |
US6203863B1 (en) * | 1998-11-27 | 2001-03-20 | United Microelectronics Corp. | Method of gap filling |
DE10010286A1 (de) * | 2000-02-25 | 2001-09-13 | Infineon Technologies Ag | Verfahren zum Auffüllen von Vertiefungen in einer Oberfläche einer Halbleiterstruktur und eine auf diese Weise aufgefüllte Halbleiterstruktur |
JP4987717B2 (ja) * | 2004-08-18 | 2012-07-25 | ダウ・コーニング・コーポレイション | コーティングを有する基板及びその調製方法 |
WO2006033233A1 (ja) * | 2004-09-21 | 2006-03-30 | Konica Minolta Holdings, Inc. | 透明ガスバリア性フィルム |
JP5405075B2 (ja) * | 2008-09-24 | 2014-02-05 | 富士フイルム株式会社 | ガスバリア膜の形成方法およびガスバリア膜 |
JP2010180434A (ja) * | 2009-02-03 | 2010-08-19 | Tokyo Electron Ltd | 成膜方法及びプラズマ成膜装置 |
EP2397574A4 (en) * | 2009-02-16 | 2013-08-14 | Mitsubishi Plastics Inc | METHOD FOR PRODUCING A MULTILAYER GAS-REINFORCED FILM |
WO2011052764A1 (ja) * | 2009-10-30 | 2011-05-05 | 住友化学株式会社 | 積層フィルムの製造方法 |
JP5967983B2 (ja) | 2012-03-07 | 2016-08-10 | 東レエンジニアリング株式会社 | シリコン含有膜及びシリコン含有膜形成方法 |
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- 2015-10-29 KR KR1020177006720A patent/KR102360686B1/ko active IP Right Grant
- 2015-10-29 US US15/510,845 patent/US10793952B2/en active Active
- 2015-10-29 CN CN201580048757.0A patent/CN107075680B/zh active Active
- 2015-10-29 WO PCT/JP2015/080475 patent/WO2016076119A1/ja active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05335299A (ja) * | 1992-05-29 | 1993-12-17 | Kawasaki Steel Corp | 半導体装置の製造方法 |
JPH07130731A (ja) * | 1993-10-29 | 1995-05-19 | Nec Corp | 半導体装置ならびにその製造方法および製造装置 |
Cited By (2)
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---|---|---|---|---|
JP2020158860A (ja) * | 2019-03-28 | 2020-10-01 | 東レエンジニアリング株式会社 | 成膜装置、及び成膜方法 |
JP7221758B2 (ja) | 2019-03-28 | 2023-02-14 | 東レエンジニアリング株式会社 | 成膜装置、及び成膜方法 |
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US20170283951A1 (en) | 2017-10-05 |
CN107075680A (zh) | 2017-08-18 |
KR102360686B1 (ko) | 2022-02-08 |
WO2016076119A1 (ja) | 2016-05-19 |
US10793952B2 (en) | 2020-10-06 |
KR20170081636A (ko) | 2017-07-12 |
JP6587384B2 (ja) | 2019-10-09 |
CN107075680B (zh) | 2019-05-28 |
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