JP2016085124A5 - - Google Patents
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- Publication number
- JP2016085124A5 JP2016085124A5 JP2014218074A JP2014218074A JP2016085124A5 JP 2016085124 A5 JP2016085124 A5 JP 2016085124A5 JP 2014218074 A JP2014218074 A JP 2014218074A JP 2014218074 A JP2014218074 A JP 2014218074A JP 2016085124 A5 JP2016085124 A5 JP 2016085124A5
- Authority
- JP
- Japan
- Prior art keywords
- sensor unit
- insulating film
- gate insulating
- gas sensor
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010408 film Substances 0.000 claims 64
- 239000007789 gas Substances 0.000 claims 39
- 239000013078 crystal Substances 0.000 claims 28
- 239000003054 catalyst Substances 0.000 claims 27
- 239000004065 semiconductor Substances 0.000 claims 24
- 230000005855 radiation Effects 0.000 claims 10
- 238000004519 manufacturing process Methods 0.000 claims 8
- 239000010409 thin film Substances 0.000 claims 6
- 238000005259 measurement Methods 0.000 claims 5
- 230000001681 protective effect Effects 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims 4
- 238000001039 wet etching Methods 0.000 claims 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- 229910003087 TiOx Inorganic materials 0.000 claims 2
- 239000002159 nanocrystal Substances 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000010030 laminating Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014218074A JP6408863B2 (ja) | 2014-10-27 | 2014-10-27 | ガスセンサ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014218074A JP6408863B2 (ja) | 2014-10-27 | 2014-10-27 | ガスセンサ |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016085124A JP2016085124A (ja) | 2016-05-19 |
| JP2016085124A5 true JP2016085124A5 (https=) | 2017-04-27 |
| JP6408863B2 JP6408863B2 (ja) | 2018-10-17 |
Family
ID=55972868
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014218074A Active JP6408863B2 (ja) | 2014-10-27 | 2014-10-27 | ガスセンサ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6408863B2 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018072146A (ja) | 2016-10-28 | 2018-05-10 | 株式会社日立製作所 | ガスセンサ |
| JP6740949B2 (ja) | 2017-03-31 | 2020-08-19 | 日立金属株式会社 | ガスセンサ |
| JP7078499B2 (ja) * | 2018-09-10 | 2022-05-31 | 日立Ｇｅニュークリア・エナジー株式会社 | 半導体素子、電子機器、イメージセンサ、計測装置、半導体素子の製造方法 |
| JP7336729B2 (ja) * | 2019-05-21 | 2023-09-01 | パナソニックＩｐマネジメント株式会社 | ガスセンサ |
| CN111008506B (zh) * | 2019-11-30 | 2023-04-07 | 中国科学院新疆理化技术研究所 | 一种基于阈值电压类型匹配的6-t存储单元抗总剂量加固方法 |
| JP2025090435A (ja) * | 2023-12-05 | 2025-06-17 | 株式会社日立ハイテク | ガスセンサモジュール |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5433097A (en) * | 1977-08-18 | 1979-03-10 | Seiko Epson Corp | Semiconductor gas sensor |
| JPS62296420A (ja) * | 1986-06-16 | 1987-12-23 | Nec Corp | 半導体装置の製造方法 |
| JP4866880B2 (ja) * | 2008-06-16 | 2012-02-01 | 株式会社日立製作所 | 電極、ガスセンサおよびその製造方法 |
| JP2011137770A (ja) * | 2009-12-29 | 2011-07-14 | Hitachi Ltd | 放射線被曝量計測機能付プロセス計測機器 |
-
2014
- 2014-10-27 JP JP2014218074A patent/JP6408863B2/ja active Active
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