JP6408863B2 - ガスセンサ - Google Patents

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Publication number
JP6408863B2
JP6408863B2 JP2014218074A JP2014218074A JP6408863B2 JP 6408863 B2 JP6408863 B2 JP 6408863B2 JP 2014218074 A JP2014218074 A JP 2014218074A JP 2014218074 A JP2014218074 A JP 2014218074A JP 6408863 B2 JP6408863 B2 JP 6408863B2
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misfet
radiation
sensor
gate
value
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Japanese (ja)
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JP2016085124A5 (https=
JP2016085124A (ja
Inventor
利幸 宇佐川
利幸 宇佐川
和浩 上田
和浩 上田
英 南部
英 南部
敦志 渡辺
敦志 渡辺
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Hitachi GE Vernova Nuclear Energy Ltd
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Hitachi-GE Nuclear Energy Ltd
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JP2014218074A 2014-10-27 2014-10-27 ガスセンサ Active JP6408863B2 (ja)

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JP2014218074A JP6408863B2 (ja) 2014-10-27 2014-10-27 ガスセンサ

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JP2016085124A JP2016085124A (ja) 2016-05-19
JP2016085124A5 JP2016085124A5 (https=) 2017-04-27
JP6408863B2 true JP6408863B2 (ja) 2018-10-17

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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018072146A (ja) 2016-10-28 2018-05-10 株式会社日立製作所 ガスセンサ
JP6740949B2 (ja) 2017-03-31 2020-08-19 日立金属株式会社 ガスセンサ
JP7078499B2 (ja) * 2018-09-10 2022-05-31 日立Ｇｅニュークリア・エナジー株式会社 半導体素子、電子機器、イメージセンサ、計測装置、半導体素子の製造方法
JP7336729B2 (ja) * 2019-05-21 2023-09-01 パナソニックＩｐマネジメント株式会社 ガスセンサ
CN111008506B (zh) * 2019-11-30 2023-04-07 中国科学院新疆理化技术研究所 一种基于阈值电压类型匹配的6-t存储单元抗总剂量加固方法
JP2025090435A (ja) * 2023-12-05 2025-06-17 株式会社日立ハイテク ガスセンサモジュール

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5433097A (en) * 1977-08-18 1979-03-10 Seiko Epson Corp Semiconductor gas sensor
JPS62296420A (ja) * 1986-06-16 1987-12-23 Nec Corp 半導体装置の製造方法
JP4866880B2 (ja) * 2008-06-16 2012-02-01 株式会社日立製作所 電極、ガスセンサおよびその製造方法
JP2011137770A (ja) * 2009-12-29 2011-07-14 Hitachi Ltd 放射線被曝量計測機能付プロセス計測機器

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