JP2014215206A5 - - Google Patents

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Publication number
JP2014215206A5
JP2014215206A5 JP2013093681A JP2013093681A JP2014215206A5 JP 2014215206 A5 JP2014215206 A5 JP 2014215206A5 JP 2013093681 A JP2013093681 A JP 2013093681A JP 2013093681 A JP2013093681 A JP 2013093681A JP 2014215206 A5 JP2014215206 A5 JP 2014215206A5
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JP
Japan
Prior art keywords
pressure sensor
value
pressure
capacitance value
region
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JP2013093681A
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English (en)
Japanese (ja)
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JP5933480B2 (ja
JP2014215206A (ja
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Priority to JP2013093681A priority Critical patent/JP5933480B2/ja
Priority claimed from JP2013093681A external-priority patent/JP5933480B2/ja
Priority to US14/154,813 priority patent/US9395258B2/en
Priority to CN201410100511.0A priority patent/CN104124244B/zh
Publication of JP2014215206A publication Critical patent/JP2014215206A/ja
Publication of JP2014215206A5 publication Critical patent/JP2014215206A5/ja
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Publication of JP5933480B2 publication Critical patent/JP5933480B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2013093681A 2013-04-26 2013-04-26 半導体圧力センサおよびその製造方法 Expired - Fee Related JP5933480B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2013093681A JP5933480B2 (ja) 2013-04-26 2013-04-26 半導体圧力センサおよびその製造方法
US14/154,813 US9395258B2 (en) 2013-04-26 2014-01-14 Semiconductor pressure sensor and fabrication method thereof
CN201410100511.0A CN104124244B (zh) 2013-04-26 2014-03-18 半导体压力传感器及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013093681A JP5933480B2 (ja) 2013-04-26 2013-04-26 半導体圧力センサおよびその製造方法

Publications (3)

Publication Number Publication Date
JP2014215206A JP2014215206A (ja) 2014-11-17
JP2014215206A5 true JP2014215206A5 (https=) 2015-06-18
JP5933480B2 JP5933480B2 (ja) 2016-06-08

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JP2013093681A Expired - Fee Related JP5933480B2 (ja) 2013-04-26 2013-04-26 半導体圧力センサおよびその製造方法

Country Status (3)

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US (1) US9395258B2 (https=)
JP (1) JP5933480B2 (https=)
CN (1) CN104124244B (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6119615B2 (ja) 2014-01-08 2017-04-26 三菱電機株式会社 半導体装置の製造方法
US9340412B2 (en) * 2014-07-28 2016-05-17 Ams International Ag Suspended membrane for capacitive pressure sensor
JP6433349B2 (ja) * 2015-03-19 2018-12-05 三菱電機株式会社 半導体圧力センサおよびその製造方法
ES2732024T3 (es) * 2015-04-21 2019-11-20 Univ Catalunya Politecnica Circuito integrado que comprende estructuras micromecánicas multicapa con masa mejorada y fiabilidad y método de fabricación del mismo
US9846097B2 (en) * 2015-11-03 2017-12-19 Nxp Usa, Inc. Pressure sensor with variable sense gap
JP6532429B2 (ja) 2016-06-01 2019-06-19 三菱電機株式会社 半導体圧力センサ
US10199424B1 (en) * 2017-07-19 2019-02-05 Meridian Innovation Pte Ltd Thermoelectric-based infrared detector having a cavity and a MEMS structure defined by BEOL metals lines
EP3682210B1 (en) 2017-11-17 2023-10-04 Sciosense B.V. Capacitive pressure sensors and other devices having a suspended membrane and having rounded corners at an anchor edge
JP7829440B2 (ja) * 2022-08-03 2026-03-13 セイコーＮｐｃ株式会社 赤外線センサの製造方法および赤外線センサ
CN120352074B (zh) * 2025-06-20 2025-09-26 南京大学 一种电容式半导体微型真空计及真空检测方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19638969C2 (de) * 1996-09-23 2002-05-16 Mosel Vitelic Inc EEPROM mit einem Polydistanz-Floating-Gate und Verfahren zu deren Herstellung
US5933741A (en) * 1997-08-18 1999-08-03 Vanguard International Semiconductor Corporation Method of making titanium silicide source/drains and tungsten silicide gate electrodes for field effect transistors
US6472243B2 (en) * 2000-12-11 2002-10-29 Motorola, Inc. Method of forming an integrated CMOS capacitive pressure sensor
US7429495B2 (en) * 2002-08-07 2008-09-30 Chang-Feng Wan System and method of fabricating micro cavities
DE102009027132A1 (de) * 2009-06-24 2010-12-30 Robert Bosch Gmbh Induktive Delta-C Auswertung für Drucksensoren
JP5687202B2 (ja) * 2009-11-04 2015-03-18 ローム株式会社 圧力センサおよび圧力センサの製造方法
JP5504187B2 (ja) * 2011-01-26 2014-05-28 株式会社東芝 半導体装置及びその製造方法
JP5832417B2 (ja) 2012-12-07 2015-12-16 三菱電機株式会社 半導体圧力センサおよびその製造方法

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