CN104409444B - 鳍层光刻对准标记的制备方法 - Google Patents
鳍层光刻对准标记的制备方法 Download PDFInfo
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- CN104409444B CN104409444B CN201410654615.6A CN201410654615A CN104409444B CN 104409444 B CN104409444 B CN 104409444B CN 201410654615 A CN201410654615 A CN 201410654615A CN 104409444 B CN104409444 B CN 104409444B
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CN201410654615.6A CN104409444B (zh) | 2014-11-17 | 2014-11-17 | 鳍层光刻对准标记的制备方法 |
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CN201410654615.6A CN104409444B (zh) | 2014-11-17 | 2014-11-17 | 鳍层光刻对准标记的制备方法 |
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CN104409444A CN104409444A (zh) | 2015-03-11 |
CN104409444B true CN104409444B (zh) | 2018-01-02 |
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Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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CN106910677B (zh) * | 2015-12-23 | 2020-12-18 | 中芯国际集成电路制造(上海)有限公司 | 用于制造半导体器件的构图方法、半导体器件制作方法 |
US9691775B1 (en) * | 2016-04-28 | 2017-06-27 | Globalfoundries Inc. | Combined SADP fins for semiconductor devices and methods of making the same |
CN110571138A (zh) * | 2018-06-05 | 2019-12-13 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的制作方法 |
CN111986989B (zh) * | 2019-05-23 | 2023-05-26 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
CN110783272B (zh) | 2019-10-17 | 2022-05-27 | 上海华力集成电路制造有限公司 | 鳍式场效应晶体管的截断工艺方法 |
CN111399351A (zh) * | 2020-04-09 | 2020-07-10 | 中国科学院微电子研究所 | 双重构图工艺光刻标记的改善方法 |
CN115241047A (zh) * | 2021-04-23 | 2022-10-25 | 长鑫存储技术有限公司 | 半导体结构的制备方法 |
Citations (2)
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CN1815702A (zh) * | 2004-08-05 | 2006-08-09 | 国际商业机器公司 | 构成用于腐蚀finfet的硅翅的最终硬掩模的三掩模方法 |
CN104064474A (zh) * | 2014-07-16 | 2014-09-24 | 上海集成电路研发中心有限公司 | 双重图形化鳍式晶体管的鳍结构制造方法 |
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US8486769B2 (en) * | 2010-11-19 | 2013-07-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming metrology structures from fins in integrated circuitry |
US9275890B2 (en) * | 2013-03-15 | 2016-03-01 | Globalfoundries Inc. | Methods of forming alignment marks and overlay marks on integrated circuit products employing FinFET devices and the resulting alignment/overlay mark |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN1815702A (zh) * | 2004-08-05 | 2006-08-09 | 国际商业机器公司 | 构成用于腐蚀finfet的硅翅的最终硬掩模的三掩模方法 |
CN104064474A (zh) * | 2014-07-16 | 2014-09-24 | 上海集成电路研发中心有限公司 | 双重图形化鳍式晶体管的鳍结构制造方法 |
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Denomination of invention: Preparation method of fin layer photo-etching alignment mark Effective date of registration: 20200228 Granted publication date: 20180102 Pledgee: BANK OF SHANGHAI CO.,LTD. Pledgor: SHANGHAI IC R & D CENTER Co.,Ltd. Registration number: Y2020980000384 |
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Date of cancellation: 20230523 Granted publication date: 20180102 Pledgee: BANK OF SHANGHAI CO.,LTD. Pledgor: SHANGHAI IC R & D CENTER Co.,Ltd. Registration number: Y2020980000384 |
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Denomination of invention: Preparation Method of Fin Layer Lithography Alignment Mark Effective date of registration: 20230525 Granted publication date: 20180102 Pledgee: Shanghai Bank Co.,Ltd. Pudong Avenue Branch Pledgor: SHANGHAI IC R & D CENTER Co.,Ltd. Registration number: Y2023310000213 |
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