JP2016066681A - 基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム - Google Patents
基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム Download PDFInfo
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Abstract
【解決手段】親水性ポリマーと疎水性ポリマーとを含むブロック共重合体を用いて、ウェハを処理する方法であって、ウェハ上に所定のレジストパターンを形成し(工程S3)、レジストパターンの表面に、当該レジストパターンの変形を抑制するための薄膜を形成する(工程S4)。その後、薄膜形成後のウェハに対してブロック共重合体を塗布し(工程S5)、次いで、ブロック共重合体を親水性ポリマーと疎水性ポリマーに相分離させる。
【選択図】図6
Description
その後カセットステーション10のウェハ搬送装置23によって所定のカセット載置板21のカセットCに搬送される。
2 プラズマ処理装置
3 塗布処理装置
30 現像装置
31 有機溶剤供給装置
32 反射防止膜形成装置
33 中性層形成装置
34 レジスト塗布装置
35 ブロック共重合体塗布装置
40 熱処理装置
104、105 薄膜形成装置
300 制御部
400 反射防止膜
401 中性層
402 レジストパターン
403 薄膜
404 ブロック共重合体
405 親水性ポリマー
406 疎水性ポリマー
W ウェハ
Claims (14)
- 親水性ポリマーと疎水性ポリマーとを含むブロック共重合体を用いて、基板を処理する方法であって、
基板上にレジスト膜により所定のパターンを形成するレジストパターン形成工程と、
前記レジストパターンの表面に、当該レジストパターンの変形を抑制するための薄膜を形成する薄膜形成工程と、
前記薄膜形成後の基板に対してブロック共重合体を塗布するブロック共重合体塗布工程と、
前記ブロック共重合体を前記親水性ポリマーと前記疎水性ポリマーに相分離させるポリマー分離工程と、を有することを特徴とする、基板処理方法。 - 前記薄膜は、シリコン含有の膜であることを特徴とする、請求項1に記載の基板処理方法。
- 前記シリコン含有膜は、プラズマ処理により形成され、
前記プラズマ処理は、シリコンを含有する電極に高周波電力を印加して行われることを特徴とする、請求項2に記載の基板処理方法。 - 前記シリコン含有膜は、SiO、SiO2、またはSiOCのいずれかであることを特徴とする、請求項2または3のいずれか一項に記載の基板処理方法。
- 前記薄膜は、W、Ti、またはTiNのいずれかであることを特徴とする、請求項1に記載の基板処理方法。
- 前記薄膜は、CVD処理またはALD処理により形成されることを特徴とする、請求項5に記載の基板処理方法。
- 請求項1〜6のいずれかに記載の基板処理方法を基板処理システムによって実行させるように、当該基板処理システムを制御する制御部のコンピュータ上で動作するプログラム。
- 請求項7に記載のプログラムを格納した読み取り可能なコンピュータ記憶媒体。
- 親水性ポリマーと疎水性ポリマーとを含むブロック共重合体を用いて、基板を処理するシステムであって、
基板上にレジスト膜を塗布するレジスト塗布装置と、
露光処理されたレジスト膜を現像してレジストパターンを形成する現像処理装置と、
前記レジストパターンの表面に、当該レジストパターンの変形を抑制するための薄膜を形成する薄膜形成装置と、
前記薄膜形成後の基板に対して前記ブロック共重合体を塗布するブロック共重合体塗布装置と、
前記ブロック共重合体を前記親水性ポリマーと前記疎水性ポリマーに相分離させるポリマー分離装置と、を有することを特徴とする、基板処理システム。 - 前記薄膜は、シリコン含有の膜であることを特徴とする、請求項9に記載の基板処理システム。
- 前記薄膜形成装置はプラズマ処理装置であり、
前記プラズマ処理装置では、シリコンを含有する電極に高周波電力を印加してプラズマ処理が行われることを特徴とする、請求項10に記載の基板処理システム。 - 前記シリコン含有膜は、SiO、SiO2、またはSiOCのいずれかであることを特徴とする、請求項10または11のいずれか一項に記載の基板処理システム。
- 前記薄膜は、W、Ti、またはTiNのいずれかであることを特徴とする、請求項9に記載の基板処理システム。
- 前記薄膜形成装置はCVD処理装置またはALD処理装置であることを特徴とする、請求項13に記載の基板処理システム。
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