JP2016063001A - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP2016063001A JP2016063001A JP2014188268A JP2014188268A JP2016063001A JP 2016063001 A JP2016063001 A JP 2016063001A JP 2014188268 A JP2014188268 A JP 2014188268A JP 2014188268 A JP2014188268 A JP 2014188268A JP 2016063001 A JP2016063001 A JP 2016063001A
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- 239000000463 material Substances 0.000 claims abstract description 106
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 78
- 238000007789 sealing Methods 0.000 claims abstract description 49
- 229910052779 Neodymium Inorganic materials 0.000 claims abstract description 43
- -1 neodymium aluminate Chemical class 0.000 claims abstract description 32
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims abstract description 20
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000009792 diffusion process Methods 0.000 claims abstract description 16
- RCYIWFITYHZCIW-UHFFFAOYSA-N 4-methoxybut-1-yne Chemical compound COCCC#C RCYIWFITYHZCIW-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052791 calcium Inorganic materials 0.000 claims description 18
- 229910052712 strontium Inorganic materials 0.000 claims description 18
- 239000002245 particle Substances 0.000 claims description 15
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 229910052788 barium Inorganic materials 0.000 claims description 10
- 229920005989 resin Polymers 0.000 claims description 9
- 239000011347 resin Substances 0.000 claims description 9
- 102100032047 Alsin Human genes 0.000 claims description 4
- 101710187109 Alsin Proteins 0.000 claims description 4
- 229910004283 SiO 4 Inorganic materials 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910017639 MgSi Inorganic materials 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 2
- 229910052765 Lutetium Inorganic materials 0.000 claims description 2
- 229910052693 Europium Inorganic materials 0.000 claims 1
- 238000009877 rendering Methods 0.000 abstract description 20
- 238000000295 emission spectrum Methods 0.000 abstract description 11
- 230000000052 comparative effect Effects 0.000 description 30
- 230000004048 modification Effects 0.000 description 21
- 238000012986 modification Methods 0.000 description 21
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 description 10
- 239000000203 mixture Substances 0.000 description 9
- 238000001228 spectrum Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000004907 flux Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000011148 porous material Substances 0.000 description 3
- 229920002050 silicone resin Polymers 0.000 description 3
- 229910016066 BaSi Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 239000011342 resin composition Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910010199 LiAl Inorganic materials 0.000 description 1
- RLMMPAFGVXFLEB-UHFFFAOYSA-N O[Si](O)(O)Cl.P Chemical compound O[Si](O)(O)Cl.P RLMMPAFGVXFLEB-UHFFFAOYSA-N 0.000 description 1
- 229910003668 SrAl Inorganic materials 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 150000001398 aluminium Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229910052705 radium Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0106—Neodymium [Nd]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/186—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Silicates, Zeolites, And Molecular Sieves (AREA)
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
- Luminescent Compositions (AREA)
Abstract
【解決手段】発光素子10と、発光素子10を配置する成型体40と、発光素子10からの光により励起されて蛍光を発する蛍光体70と、水酸化ネオジム、ネオジムアルミネート又はネオジムシリケートを含む拡散材80とを含有し発光素子10を被覆する封止部材50とを備える。発光素子10と蛍光体70による混色光の発光スペクトルの一部を、拡散材50に吸収させて出力する。
【選択図】図2
Description
(拡散材)
(発光素子10)
(蛍光体70)
(封止部材50)
(実施例1〜4、比較例)
(変形例1)
(変形例2)
(変形例3)
(変形例4)
(変形例5)
10…発光素子
20…第一リード
30…第二リード
40…成形体
50…封止部材
60…ワイヤ
70…蛍光体
72…第一の部位
80…拡散材
82、84、86…第二の部位
88…カバー
Claims (13)
- 発光素子と、
前記発光素子を配置する成型体と、
前記発光素子からの光により励起されて蛍光を発する蛍光体と、水酸化ネオジム、ネオジムアルミネート又はネオジムシリケートを含む拡散材とを含有し前記発光素子を被覆する封止部材と、を備えていることを特徴とする発光装置。 - 請求項1に記載の発光装置であって、
前記拡散材が水酸化ネオジムであり、
該水酸化ネオジムが、Nd(OH)3又はNdO2Hであることを特徴とする発光装置。 - 請求項1に記載の発光装置であって、
前記拡散材がネオジムアルミネート又はネオジムシリケートであり、
該ネオジムアルミネート又はネオジムシリケートが、一般式NdxMyOz、(ただし、Mは、Si又はAlであり、x、y、zについて、1≦x≦10、1≦y≦15、3≦z≦45である。)で表されることを特徴とする発光装置。 - 請求項1又は3に記載の発光装置であって、
前記拡散材がネオジムアルミネート又はネオジムシリケートであり、
該ネオジムアルミネート又はネオジムシリケートが、NdAlO3、Nd2Si2O7、Nd9.83((Si,Al)O4)6O2から選択された少なくとも1種であることを特徴とする発光装置。 - 請求項1〜4のいずれか一に記載の発光装置であって、
前記拡散材の反射率は、波長が575nm以上605nm以下の範囲において、50%以上65%以下であることを特徴とする発光装置。 - 請求項1〜5のいずれか一に記載の発光装置であって、
前記拡散材の添加量が、前記封止部材の材料に対して0.01重量%以上10重量%以下であることを特徴とする発光装置。 - 請求項1〜6のいずれか一に記載の発光装置であって、
前記拡散材の平均粒径が、0.1μm以上5μm以下であることを特徴とする発光装置。 - 請求項1〜7のいずれか一に記載の発光装置であって、
前記蛍光体が、(Lu,Y,Gd)3(Al,Ga)5O12:Ce、(Sr,Ca)AlSiN3:Eu、(Ba,Sr,Ca)2SiO4:Eu、Ca8MgSi4O16Cl2:Eu、Sr4Al14O25:Euから選択された少なくとも1種あることを特徴とする発光装置。 - 請求項1〜8のいずれか一に記載の発光装置であって、
前記封止部材は、前記蛍光体を含有し前記発光素子を被覆する第一の部位と、前記第一の部位を被覆し前記拡散材を含有する第二の部位とから構成されていることを特徴とする発光装置。 - 請求項9に記載の発光装置であって、
前記第一の部位と前記第二の部位が離間して配置されていることを特徴とする発光装置。 - 請求項9又は10に記載の発光装置であって、
前記第一の部位又は第二の部位は、前記成型体の上面に配置されていることを特徴とする発光装置。 - 請求項1〜8のいずれか一に記載の発光装置であって、
前記蛍光体及び拡散材は、前記封止部材に混合されていることを特徴とする発光装置。 - 請求項1〜12のいずれか一に記載の発光装置であって、
前記封止部材の材料は、透光性樹脂であることを特徴とする発光装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014188268A JP6365159B2 (ja) | 2014-09-16 | 2014-09-16 | 発光装置 |
US14/853,311 US9831396B2 (en) | 2014-09-16 | 2015-09-14 | Light emitting device including light emitting element with phosphor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014188268A JP6365159B2 (ja) | 2014-09-16 | 2014-09-16 | 発光装置 |
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JP2016063001A true JP2016063001A (ja) | 2016-04-25 |
JP6365159B2 JP6365159B2 (ja) | 2018-08-01 |
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JP2014188268A Active JP6365159B2 (ja) | 2014-09-16 | 2014-09-16 | 発光装置 |
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US (1) | US9831396B2 (ja) |
JP (1) | JP6365159B2 (ja) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017217549A1 (ja) * | 2016-06-17 | 2017-12-21 | シチズン電子株式会社 | 発光装置 |
JP2018082034A (ja) * | 2016-11-16 | 2018-05-24 | 日亜化学工業株式会社 | 発光装置 |
WO2018147947A1 (en) * | 2017-02-08 | 2018-08-16 | General Electric Company | Led design of lower cct utilizing pfs phosphor |
JP2019067808A (ja) * | 2017-09-28 | 2019-04-25 | 日亜化学工業株式会社 | 発光装置 |
JP2019134052A (ja) * | 2018-01-31 | 2019-08-08 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
JP2019207995A (ja) * | 2018-05-29 | 2019-12-05 | 日亜化学工業株式会社 | 発光装置 |
US10611960B2 (en) | 2016-08-24 | 2020-04-07 | Nichia Corporation | Nitride fluorescent material and light emitting device |
JP2020070418A (ja) * | 2017-11-30 | 2020-05-07 | デクセリアルズ株式会社 | 緑色蛍光体、蛍光体シート、及び発光装置 |
JP2021191858A (ja) * | 2017-11-30 | 2021-12-16 | デクセリアルズ株式会社 | 緑色蛍光体、蛍光体シート、及び発光装置 |
JP2023014144A (ja) * | 2020-09-15 | 2023-01-26 | 日亜化学工業株式会社 | 発光装置 |
JP2023036729A (ja) * | 2018-05-29 | 2023-03-14 | 日亜化学工業株式会社 | 発光装置 |
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JP6638292B2 (ja) | 2015-09-30 | 2020-01-29 | 日亜化学工業株式会社 | 装置光源 |
JP6740654B2 (ja) * | 2016-03-18 | 2020-08-19 | 日亜化学工業株式会社 | 光源装置 |
JP6912728B2 (ja) * | 2018-03-06 | 2021-08-04 | 日亜化学工業株式会社 | 発光装置及び光源装置 |
EP3617291B1 (en) * | 2018-08-27 | 2022-06-22 | Nichia Corporation | Method of manufacturing light emitting device |
US11139268B2 (en) * | 2019-08-06 | 2021-10-05 | Advanced Semiconductor Engineering, Inc. | Semiconductor package structure and method of manufacturing the same |
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