JP2016039325A - 窒化物半導体発光素子 - Google Patents
窒化物半導体発光素子 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 129
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 128
- 230000000052 comparative effect Effects 0.000 description 28
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 24
- 239000000758 substrate Substances 0.000 description 19
- 239000007789 gas Substances 0.000 description 15
- 239000012535 impurity Substances 0.000 description 15
- 238000012545 processing Methods 0.000 description 13
- 229910021529 ammonia Inorganic materials 0.000 description 12
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 239000011777 magnesium Substances 0.000 description 7
- 229910052594 sapphire Inorganic materials 0.000 description 7
- 239000010980 sapphire Substances 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 239000012159 carrier gas Substances 0.000 description 5
- 229910001873 dinitrogen Inorganic materials 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- VCZQFJFZMMALHB-UHFFFAOYSA-N tetraethylsilane Chemical compound CC[Si](CC)(CC)CC VCZQFJFZMMALHB-UHFFFAOYSA-N 0.000 description 3
- 238000012795 verification Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- HECLRDQVFMWTQS-UHFFFAOYSA-N Dicyclopentadiene Chemical compound C1C2C3CC=CC3C1C=C2 HECLRDQVFMWTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
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- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
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- C01B21/00—Nitrogen; Compounds thereof
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- C01B21/0602—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with two or more other elements chosen from metals, silicon or boron
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- C23C16/303—Nitrides
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
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Abstract
Description
本発明の窒化物半導体発光素子1の構造につき、図2を参照して説明する。図2は窒化物半導体発光素子1の概略断面図である。なお、以下では、「LED素子1」と略記する。
基板2は、サファイア基板で構成される。なお、サファイアの他、Si、SiC、AlN、AlGaN、GaN、YAGなどで構成しても構わない。
アンドープ層3は、GaNにて形成される。より具体的には、GaNよりなる低温バッファ層と、その上層にGaNよりなる下地層によって形成される。
n型窒化物半導体層4は、不純物として含有されるC濃度及びO濃度が1×1017/cm3以下となるように形成されたAlX1InX2GaX3N(0<X1≦1、0≦X2<1、0≦X3<1、X1+X2+X3=1)によって構成される。この含有C濃度及びO濃度の低下方法については後述される。
活性層5は、例えばInGaNからなる発光層とAlGaNからなる障壁層が複数層繰り返されて構成される。これらの層はアンドープでもp型又はn型にドープされていても構わない。
p型窒化物半導体層6は、AlY1InY2GaY3N(0<Y1≦1、0≦Y2<1、0≦Y3<1、Y1+Y2+Y3=1)によって構成される。なお、p型窒化物半導体層6は、n型窒化物半導体層4とは異なり、不純物として含有されるC濃度やO濃度が1×1017/cm3を上回っていても構わない。この点についても後述される。
次に、図2に示したLED素子1の製造プロセスにつき説明する。なお、この製造プロセスはあくまで一例であり、ガスの流量、炉内温度、炉内圧力等は適宜調整して構わない。
基板2としてのサファイア基板を準備し、c面サファイア基板のクリーニングを行う。このクリーニングは、より具体的には、例えばMOCVD(Metal Organic Chemical Vapor Deposition:有機金属化学気相蒸着)装置の処理炉内にc面サファイア基板を配置し、処理炉内に流量が10slmの水素ガスを流しながら、炉内温度を例えば1150℃に昇温することにより行われる。
次に、c面サファイア基板の表面に、GaNよりなる低温バッファ層を形成し、更にその上層にGaNよりなる下地層を形成する。これら低温バッファ層及び下地層がアンドープ層3に対応する。
次に、アンドープ層3の上層にAlX1InX2GaX3Nの組成からなるn型窒化物半導体層4を形成する。
次に、n型窒化物半導体層4の上層に活性層5を形成する。
次に、活性層5の上層に、AlY1InY2GaY3Nで構成されるp型窒化物半導体層6を形成する。
p型窒化物半導体層6の形成後、TMAの供給を停止すると共に、ビスシクロペンタジエニルの流量を0.2μmol/minに変更して原料ガスを20秒間供給する。これにより、厚みが5nmのp型GaNよりなる高濃度p型GaN層が形成される。
以下、実施例を参照して説明する。
上述したプロセスにおいて、n型窒化物半導体層4の形成時の原料ガスのV/III比のみを異ならせ、他の条件は同じにすることで、実施例1、実施例2、比較例1の3素子を形成した。なお、いずれの素子も主たる発光波長が370nm帯の紫外光発光素子である。
・実施例2: V/III比を2000として作成した。n型窒化物半導体層4の含有C濃度は1×1017/cm3、含有O濃度は5×1016/cm3であった。
・比較例1: V/III比を1000として作成した。n型窒化物半導体層4の含有C濃度は5×1017/cm3、含有O濃度は7×1016/cm3であった。
上述したプロセスにおいて、n型窒化物半導体層4の形成時の原料ガスのV/III比を異ならせて、実施例3、実施例4、比較例2、比較例3の4素子を形成した。なお、いずれの素子も主たる発光波長が370nm帯の紫外光発光素子である。
・実施例4: V/III比を5000として作成した。n型窒化物半導体層4の含有C濃度は3×1016/cm3、含有O濃度は3×1016/cm3であった。
・比較例2: V/III比を5000として作成した。n型窒化物半導体層4の含有C濃度は3×1016/cm3、含有O濃度は2×1017/cm3であった。
・比較例3: V/III比を1300として作成した。n型窒化物半導体層4の含有C濃度は2×1017/cm3、含有O濃度は5×1016/cm3であった。
図2に示すLED素子1は、基板2及びアンドープ層3を有するものとしたが、これらを剥離した構成(図6参照)としても構わない。この場合においても、図3〜図5を参照して上述したものと同様の効果が得られた。
2 : 基板
3 : アンドープ層
4 : n型窒化物半導体層
5 : 活性層
6 : p型窒化物半導体層
51,52,53,54,55 : LED素子
Claims (4)
- n型窒化物半導体層とp型窒化物半導体層の間に活性層を有する窒化物半導体発光素子であって、
前記n型窒化物半導体層は、AlX1InX2GaX3N(0<X1≦1、0≦X2<1、0≦X3<1、X1+X2+X3=1)を含み、含有されるC濃度及びO濃度が共に1×1017/cm3以下であることを特徴とする窒化物半導体発光素子。 - 前記n型窒化物半導体層に含有されるO濃度が8×1016/cm3以下であることを特徴とする請求項1に記載の窒化物半導体発光素子。
- 主たる発光波長が375nm以下の紫外光発光素子であることを特徴とする請求項1に又は2に記載の窒化物半導体発光素子。
- 黄色の可視光波長の発光強度が、前記主たる発光波長の発光強度に対して強度比が0.1%以下であることを特徴とする請求項3に記載の窒化物半導体発光素子。
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TW104115600A TWI615996B (zh) | 2014-08-08 | 2015-05-15 | 氮化物半導體發光元件 |
PCT/JP2015/071773 WO2016021490A1 (ja) | 2014-08-08 | 2015-07-31 | 窒化物半導体発光素子 |
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WO2017164036A1 (ja) * | 2016-03-24 | 2017-09-28 | スタンレー電気株式会社 | Iii族窒化物積層体の製造方法 |
JP2022037808A (ja) * | 2020-08-25 | 2022-03-09 | 豊田合成株式会社 | p型III族窒化物半導体の製造方法 |
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US20170222091A1 (en) | 2017-08-03 |
TWI615996B (zh) | 2018-02-21 |
TW201607079A (zh) | 2016-02-16 |
JP6356530B2 (ja) | 2018-07-11 |
WO2016021490A1 (ja) | 2016-02-11 |
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