JP2015534531A - 特定の結晶学的特徴を有するiii−v族基板材料および形成方法 - Google Patents
特定の結晶学的特徴を有するiii−v族基板材料および形成方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 92
- 238000000034 method Methods 0.000 title claims abstract description 81
- 239000000463 material Substances 0.000 title claims abstract description 76
- 230000015572 biosynthetic process Effects 0.000 title claims description 39
- 239000004065 semiconductor Substances 0.000 claims abstract description 210
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims abstract description 17
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 52
- 239000002019 doping agent Substances 0.000 claims description 44
- 229910002601 GaN Inorganic materials 0.000 claims description 37
- 230000008569 process Effects 0.000 claims description 36
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 6
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 2
- 238000010297 mechanical methods and process Methods 0.000 claims description 2
- 230000005226 mechanical processes and functions Effects 0.000 claims description 2
- 239000013078 crystal Substances 0.000 description 40
- 230000007547 defect Effects 0.000 description 37
- 238000010521 absorption reaction Methods 0.000 description 17
- 230000008859 change Effects 0.000 description 16
- 239000000376 reactant Substances 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 239000012071 phase Substances 0.000 description 8
- 229910052594 sapphire Inorganic materials 0.000 description 7
- 239000010980 sapphire Substances 0.000 description 7
- 238000000926 separation method Methods 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000007730 finishing process Methods 0.000 description 3
- 230000002427 irreversible effect Effects 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 238000001429 visible spectrum Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000001739 density measurement Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 238000012935 Averaging Methods 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005136 cathodoluminescence Methods 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/205—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
Abstract
Description
Claims (15)
- 半導体基板を形成する方法であって、
半導体材料を含んでなるベース基板を用意し、そして
13−15族材料を含んでなるベース基板を覆う第1の半導体層を、ハイドライド気相成長(HVPE)を通じて形成するに際し、前記第1の半導体層が、N面配向を有する上面を含んでなる、半導体基板を形成する方法。 - 前記ベース基板が窒化ガリウム(GaN)を含んでなる、請求項1に記載の方法。
- 前記第1の半導体層の形成を、950℃よりも高い温度で実行する、請求項1に記載の方法。
- 前記第1の半導体層を、介在バッファー層の形成無しに前記ベース基板上に直接形成する、請求項1に記載の方法。
- 前記第1の半導体層が窒化ガリウム(GaN)を含んでなる、請求項1に記載の方法。
- 前記第1の半導体層が、Si、Ge、Fe、Mg、Zn、またはそれらの組み合せを含むドーパントを含んでなる、請求項1に記載の方法。
- 前記第1の半導体層が、少なくとも約0.1mmの平均厚さからなる、請求項1に記載の方法。
- 前記第1の半導体層の形成を、少なくとも約50ミクロン/時間の速度で実行する、請求項1に記載の方法。
- 前記第1の半導体層の形成が、三次元成長モード、二次元成長モード、およびエピタキシャル成長の間に、三次元と二次元の成長モードの間で切り替えることを含んでなる、請求項1に記載の方法。
- 前記第1の半導体層の前記上面が複数の突起を含んでなり、前記突起が、約0.6以下の高さ比(h/ti)を有し、hが、前記複数の突起の平均高さを表し、tiが、前記第1の半導体層の厚さを表す、請求項1に記載の方法。
- 前記第1の半導体層の上面の少なくとも一部分を除去することをさらに含んでなり、除去は、前記上面から複数の突起を除去することを含み、除去は、前記第1の半導体層の元来の平均厚さの約15%以下だけ、前記第1の半導体層の厚さを減少させることを含んでなる、請求項1に記載の方法。
- 前記上面に対向する、前記第1の半導体層の背面の一部分を除去することをさらに含んでなり、前記背面がGa面配向を有し、除去が機械的工程を含んでなり、除去が破砕を含み、除去が研磨を含んでなる、請求項1に記載の方法。
- 半導体基板を形成する方法であって、
窒素を含む半導体材料を含んでなるベース基板であって、N面配向を有する成長面を含んでなるベース基板を用意し、そして
GaNを含んでなる前記ベース基板を覆う第1の半導体層を、ハイドライド気相成長(HVPE)を通じて形成することを含んでなり、前記第1の半導体層が、N面配向を有する上面を含んでなる、半導体基板を形成する方法。 - 単一形成工程を使用して一連の半導体基板を形成する方法であって、
窒素を含む半導体材料を含んでなるベース基板であって、N面配向を有する成長面を含んでなるベース基板を用意し、そして
前記ベース基板を覆うブール(boule)を形成し、そして
前記ブールを切断して、複数の個別の半導体基板を形成すること、を含んでなる方法。 - 前記ブールが剥離層を含んでなる、請求項14に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US201261696908P | 2012-09-05 | 2012-09-05 | |
US61/696,908 | 2012-09-05 | ||
PCT/EP2013/068376 WO2014037446A1 (en) | 2012-09-05 | 2013-09-05 | A group iii-v substrate material with particular crystallographic features and methods of making |
Publications (2)
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JP2015534531A true JP2015534531A (ja) | 2015-12-03 |
JP6405309B2 JP6405309B2 (ja) | 2018-10-17 |
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US (1) | US9312129B2 (ja) |
EP (1) | EP2893552A1 (ja) |
JP (1) | JP6405309B2 (ja) |
KR (1) | KR20150052275A (ja) |
CN (1) | CN104603911B (ja) |
WO (1) | WO2014037446A1 (ja) |
Cited By (1)
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JP2017210391A (ja) * | 2016-05-27 | 2017-11-30 | 国立大学法人東北大学 | 窒化物半導体自立基板作製方法 |
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CN105719968B (zh) * | 2014-12-04 | 2018-12-11 | 北京北方华创微电子装备有限公司 | 硅衬底上外延氮化镓薄膜及制备hemt器件的方法 |
JP6872724B2 (ja) * | 2015-02-18 | 2021-05-19 | 国立大学法人東北大学 | 窒化物半導体自立基板作製方法 |
CN106299065B (zh) * | 2015-06-25 | 2018-11-27 | 光州科学技术院 | 基板、其制造方法及利用其的发光二极管 |
KR101647303B1 (ko) * | 2016-01-15 | 2016-08-10 | 광주과학기술원 | 기판, 이를 제조하는 방법 및 이를 이용하는 발광 다이오드 |
KR101636702B1 (ko) * | 2015-06-25 | 2016-07-06 | 광주과학기술원 | 기판, 이를 제조하는 방법 및 이를 이용하는 발광 다이오드 |
US9991122B2 (en) * | 2016-08-31 | 2018-06-05 | Micron Technology, Inc. | Methods of forming semiconductor device structures including two-dimensional material structures |
US10903074B2 (en) * | 2018-03-02 | 2021-01-26 | Sciocs Company Limited | GaN laminate and method of manufacturing the same |
JP6998798B2 (ja) * | 2018-03-02 | 2022-01-18 | 株式会社サイオクス | GaN積層体およびその製造方法 |
US11121035B2 (en) * | 2018-05-22 | 2021-09-14 | Semiconductor Components Industries, Llc | Semiconductor substrate processing methods |
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US9312129B2 (en) | 2016-04-12 |
JP6405309B2 (ja) | 2018-10-17 |
CN104603911B (zh) | 2017-03-08 |
US20140065801A1 (en) | 2014-03-06 |
EP2893552A1 (en) | 2015-07-15 |
CN104603911A (zh) | 2015-05-06 |
KR20150052275A (ko) | 2015-05-13 |
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