JP2015521368A - アドバンスアニールプロセスにおいて粒子を低減させる装置および方法 - Google Patents

アドバンスアニールプロセスにおいて粒子を低減させる装置および方法 Download PDF

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Publication number
JP2015521368A
JP2015521368A JP2015507019A JP2015507019A JP2015521368A JP 2015521368 A JP2015521368 A JP 2015521368A JP 2015507019 A JP2015507019 A JP 2015507019A JP 2015507019 A JP2015507019 A JP 2015507019A JP 2015521368 A JP2015521368 A JP 2015521368A
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Japan
Prior art keywords
energy
substrate
aperture member
transparent sheet
pulse
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Pending
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JP2015507019A
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English (en)
Japanese (ja)
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JP2015521368A5 (enExample
Inventor
アミカム シャーデー，
アミカム シャーデー，
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Applied Materials Inc
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Applied Materials Inc
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Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2015521368A publication Critical patent/JP2015521368A/ja
Publication of JP2015521368A5 publication Critical patent/JP2015521368A5/ja
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
    • B23K26/0661—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks disposed on the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Computer Hardware Design (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Toxicology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Recrystallisation Techniques (AREA)
  • Laser Beam Processing (AREA)
JP2015507019A 2012-04-18 2013-03-22 アドバンスアニールプロセスにおいて粒子を低減させる装置および方法 Pending JP2015521368A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261635136P 2012-04-18 2012-04-18
US61/635,136 2012-04-18
PCT/US2013/033441 WO2013158335A1 (en) 2012-04-18 2013-03-22 Apparatus and method to reduce particles in advance anneal process

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2018026659A Division JP6526855B6 (ja) 2012-04-18 2018-02-19 アドバンスアニールプロセスにおいて粒子を低減させる装置および方法

Publications (2)

Publication Number Publication Date
JP2015521368A true JP2015521368A (ja) 2015-07-27
JP2015521368A5 JP2015521368A5 (enExample) 2016-05-19

Family

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JP2015507019A Pending JP2015521368A (ja) 2012-04-18 2013-03-22 アドバンスアニールプロセスにおいて粒子を低減させる装置および方法
JP2018026659A Active JP6526855B6 (ja) 2012-04-18 2018-02-19 アドバンスアニールプロセスにおいて粒子を低減させる装置および方法

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Country Status (7)

Country Link
US (1) US9214346B2 (enExample)
JP (2) JP2015521368A (enExample)
KR (1) KR102108939B1 (enExample)
CN (2) CN107579022B (enExample)
SG (1) SG11201405535PA (enExample)
TW (1) TWI622099B (enExample)
WO (1) WO2013158335A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201517133A (zh) * 2013-10-07 2015-05-01 Applied Materials Inc 使用熱佈植與奈秒退火致使銦鋁鎵氮化物材料系統中摻雜劑的高活化
CN109427541A (zh) * 2017-08-29 2019-03-05 中芯国际集成电路制造(北京)有限公司 半导体器件的形成方法
CA3088725A1 (en) * 2018-01-19 2019-07-25 Ncc Nano, Llc Method for curing solder paste on a thermally fragile substrate
JP7108185B2 (ja) * 2018-11-22 2022-07-28 富士通株式会社 最適化装置および最適化装置の制御方法
WO2024042364A1 (en) * 2022-08-24 2024-02-29 Rockley Photonics Limited Wearable module

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JPS5480082A (en) * 1977-12-05 1979-06-26 Ibm Mask for projecting print
JPH0444309A (ja) * 1990-06-12 1992-02-14 Seiko Epson Corp 投影露光方法及び半導体装置の製造方法
JPH04174846A (ja) * 1990-11-08 1992-06-23 Matsushita Electron Corp マスク保護部材
JPH06140304A (ja) * 1992-10-29 1994-05-20 Nikon Corp 投影露光装置
JPH09260257A (ja) * 1996-03-26 1997-10-03 Canon Inc レンズ汚染を防止した投影露光装置およびそれを用いた半導体デバイス製造プロセス
JP2002025907A (ja) * 2000-04-26 2002-01-25 Semiconductor Energy Lab Co Ltd 半導体装置作製方法

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JPH06100825B2 (ja) * 1985-08-29 1994-12-12 富士通株式会社 パタ−ン形成方法
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JPH04370925A (ja) * 1991-06-20 1992-12-24 Hitachi Ltd レーザアニール用マスク並びにレーザアニール方法及び装置
JPH0866790A (ja) * 1994-08-30 1996-03-12 Sony Corp レーザ加工装置
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JP2001023918A (ja) * 1999-07-08 2001-01-26 Nec Corp 半導体薄膜形成装置
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US6792029B2 (en) * 2002-03-27 2004-09-14 Sharp Laboratories Of America, Inc. Method of suppressing energy spikes of a partially-coherent beam
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Publication number Priority date Publication date Assignee Title
JPS5480082A (en) * 1977-12-05 1979-06-26 Ibm Mask for projecting print
JPH0444309A (ja) * 1990-06-12 1992-02-14 Seiko Epson Corp 投影露光方法及び半導体装置の製造方法
JPH04174846A (ja) * 1990-11-08 1992-06-23 Matsushita Electron Corp マスク保護部材
JPH06140304A (ja) * 1992-10-29 1994-05-20 Nikon Corp 投影露光装置
JPH09260257A (ja) * 1996-03-26 1997-10-03 Canon Inc レンズ汚染を防止した投影露光装置およびそれを用いた半導体デバイス製造プロセス
JP2002025907A (ja) * 2000-04-26 2002-01-25 Semiconductor Energy Lab Co Ltd 半導体装置作製方法

Also Published As

Publication number Publication date
CN107579022A (zh) 2018-01-12
SG11201405535PA (en) 2014-11-27
KR20150003769A (ko) 2015-01-09
CN104160489A (zh) 2014-11-19
TW201344798A (zh) 2013-11-01
JP2018117134A (ja) 2018-07-26
WO2013158335A1 (en) 2013-10-24
CN107579022B (zh) 2021-03-16
JP6526855B2 (ja) 2019-06-05
US20130280923A1 (en) 2013-10-24
US9214346B2 (en) 2015-12-15
KR102108939B1 (ko) 2020-05-12
JP6526855B6 (ja) 2019-06-26
TWI622099B (zh) 2018-04-21

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