CN104160489A - 先进退火工艺中减少颗粒的设备和方法 - Google Patents

先进退火工艺中减少颗粒的设备和方法 Download PDF

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Publication number
CN104160489A
CN104160489A CN201380012265.7A CN201380012265A CN104160489A CN 104160489 A CN104160489 A CN 104160489A CN 201380012265 A CN201380012265 A CN 201380012265A CN 104160489 A CN104160489 A CN 104160489A
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CN
China
Prior art keywords
energy
substrate
slide
pulse
electromagnetic energy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201380012265.7A
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English (en)
Chinese (zh)
Inventor
阿米科姆·萨德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to CN201710619013.0A priority Critical patent/CN107579022B/zh
Publication of CN104160489A publication Critical patent/CN104160489A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
    • B23K26/0661—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks disposed on the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • H10P34/42—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Laser Beam Processing (AREA)
CN201380012265.7A 2012-04-18 2013-03-22 先进退火工艺中减少颗粒的设备和方法 Pending CN104160489A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710619013.0A CN107579022B (zh) 2012-04-18 2013-03-22 先进退火工艺中减少颗粒的设备和方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261635136P 2012-04-18 2012-04-18
US61/635,136 2012-04-18
PCT/US2013/033441 WO2013158335A1 (en) 2012-04-18 2013-03-22 Apparatus and method to reduce particles in advance anneal process

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201710619013.0A Division CN107579022B (zh) 2012-04-18 2013-03-22 先进退火工艺中减少颗粒的设备和方法

Publications (1)

Publication Number Publication Date
CN104160489A true CN104160489A (zh) 2014-11-19

Family

ID=49380495

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201380012265.7A Pending CN104160489A (zh) 2012-04-18 2013-03-22 先进退火工艺中减少颗粒的设备和方法
CN201710619013.0A Active CN107579022B (zh) 2012-04-18 2013-03-22 先进退火工艺中减少颗粒的设备和方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201710619013.0A Active CN107579022B (zh) 2012-04-18 2013-03-22 先进退火工艺中减少颗粒的设备和方法

Country Status (7)

Country Link
US (1) US9214346B2 (enExample)
JP (2) JP2015521368A (enExample)
KR (1) KR102108939B1 (enExample)
CN (2) CN104160489A (enExample)
SG (1) SG11201405535PA (enExample)
TW (1) TWI622099B (enExample)
WO (1) WO2013158335A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109427541A (zh) * 2017-08-29 2019-03-05 中芯国际集成电路制造(北京)有限公司 半导体器件的形成方法
CN111210046A (zh) * 2018-11-22 2020-05-29 富士通株式会社 优化装置及优化装置的控制方法
CN111902237A (zh) * 2018-01-19 2020-11-06 Ncc纳诺责任有限公司 用于在热脆性基板上固化焊膏的方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201517133A (zh) * 2013-10-07 2015-05-01 應用材料股份有限公司 使用熱佈植與奈秒退火致使銦鋁鎵氮化物材料系統中摻雜劑的高活化
US20240065553A1 (en) * 2022-08-24 2024-02-29 Rockley Photonics Limited Wearable module

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4131363A (en) * 1977-12-05 1978-12-26 International Business Machines Corporation Pellicle cover for projection printing system
CN1287381A (zh) * 1999-06-25 2001-03-14 三菱电机株式会社 激光热处理用光学系统和激光热处理装置
CN1304548A (zh) * 1999-03-10 2001-07-18 三菱电机株式会社 激光热处理方法,激光热处理装置以及半导体装置
KR20070081838A (ko) * 2006-02-14 2007-08-20 한국과학기술원 레이저를 이용한 광투과성 기판 오염물 세정 장치 및 방법
US8148663B2 (en) * 2007-07-31 2012-04-03 Applied Materials, Inc. Apparatus and method of improving beam shaping and beam homogenization

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59137789A (ja) * 1983-01-27 1984-08-07 Matsushita Electric Ind Co Ltd 潜熱型蓄熱装置
JPH06100825B2 (ja) * 1985-08-29 1994-12-12 富士通株式会社 パタ−ン形成方法
JPH0444309A (ja) * 1990-06-12 1992-02-14 Seiko Epson Corp 投影露光方法及び半導体装置の製造方法
JPH04174846A (ja) * 1990-11-08 1992-06-23 Matsushita Electron Corp マスク保護部材
JP3149450B2 (ja) * 1991-04-04 2001-03-26 セイコーエプソン株式会社 薄膜トランジスタの製造方法及び製造装置
JPH04370925A (ja) * 1991-06-20 1992-12-24 Hitachi Ltd レーザアニール用マスク並びにレーザアニール方法及び装置
JPH06140304A (ja) 1992-10-29 1994-05-20 Nikon Corp 投影露光装置
JPH0866790A (ja) * 1994-08-30 1996-03-12 Sony Corp レーザ加工装置
US5576125A (en) 1995-07-27 1996-11-19 Micro Lithography, Inc. Method for making an optical pellicle
JPH09260257A (ja) 1996-03-26 1997-10-03 Canon Inc レンズ汚染を防止した投影露光装置およびそれを用いた半導体デバイス製造プロセス
US5793836A (en) * 1996-09-06 1998-08-11 International Business Machines Corporation X-ray mask pellicle
JP2001023918A (ja) * 1999-07-08 2001-01-26 Nec Corp 半導体薄膜形成装置
JP4841740B2 (ja) 2000-04-26 2011-12-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
DE60119026T2 (de) * 2000-06-01 2006-11-30 Asahi Glass Co., Ltd. Membranabdeckung und Verfahren zu deren Verwendung
US6792029B2 (en) * 2002-03-27 2004-09-14 Sharp Laboratories Of America, Inc. Method of suppressing energy spikes of a partially-coherent beam
US6829035B2 (en) 2002-11-12 2004-12-07 Applied Materials Israel, Ltd. Advanced mask cleaning and handling
US7919726B2 (en) * 2002-11-29 2011-04-05 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, laser irradiation method, and method for manufacturing a semiconductor device
JP4364611B2 (ja) * 2002-11-29 2009-11-18 株式会社半導体エネルギー研究所 結晶性半導体膜の作製方法
US7162223B2 (en) 2004-02-17 2007-01-09 Teamon Systems, Inc. System and method for notifying users of an event using alerts
JP2005277007A (ja) * 2004-03-24 2005-10-06 Hitachi Ltd 多結晶半導体膜製造方法とその装置および画像表示パネル
US7927991B2 (en) * 2006-08-25 2011-04-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5110830B2 (ja) * 2006-08-31 2012-12-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7800081B2 (en) 2007-11-08 2010-09-21 Applied Materials, Inc. Pulse train annealing method and apparatus
US20090120924A1 (en) * 2007-11-08 2009-05-14 Stephen Moffatt Pulse train annealing method and apparatus
JP2009230020A (ja) * 2008-03-25 2009-10-08 Lasertec Corp 欠陥修正装置、欠陥修正方法、及びパターン基板の製造方法
US7473501B1 (en) 2008-03-30 2009-01-06 International Business Machines Corporation Method for reducing photo-mask distortion
US20100124709A1 (en) * 2008-11-20 2010-05-20 Daniel Warren Hawtof Image mask assembly for photolithography
US8432613B2 (en) 2009-04-21 2013-04-30 Applied Materials, Inc. Multi-stage optical homogenization
US8569187B2 (en) * 2011-06-24 2013-10-29 Applied Materials, Inc. Thermal processing apparatus

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4131363A (en) * 1977-12-05 1978-12-26 International Business Machines Corporation Pellicle cover for projection printing system
CN1304548A (zh) * 1999-03-10 2001-07-18 三菱电机株式会社 激光热处理方法,激光热处理装置以及半导体装置
CN1287381A (zh) * 1999-06-25 2001-03-14 三菱电机株式会社 激光热处理用光学系统和激光热处理装置
KR20070081838A (ko) * 2006-02-14 2007-08-20 한국과학기술원 레이저를 이용한 광투과성 기판 오염물 세정 장치 및 방법
US8148663B2 (en) * 2007-07-31 2012-04-03 Applied Materials, Inc. Apparatus and method of improving beam shaping and beam homogenization

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109427541A (zh) * 2017-08-29 2019-03-05 中芯国际集成电路制造(北京)有限公司 半导体器件的形成方法
CN111902237A (zh) * 2018-01-19 2020-11-06 Ncc纳诺责任有限公司 用于在热脆性基板上固化焊膏的方法
CN111902237B (zh) * 2018-01-19 2022-04-26 Ncc纳诺责任有限公司 用于在热脆性基板上固化焊膏的方法
CN111210046A (zh) * 2018-11-22 2020-05-29 富士通株式会社 优化装置及优化装置的控制方法
CN111210046B (zh) * 2018-11-22 2023-09-15 富士通株式会社 优化装置及优化装置的控制方法

Also Published As

Publication number Publication date
JP6526855B2 (ja) 2019-06-05
JP2018117134A (ja) 2018-07-26
JP6526855B6 (ja) 2019-06-26
CN107579022A (zh) 2018-01-12
KR20150003769A (ko) 2015-01-09
KR102108939B1 (ko) 2020-05-12
CN107579022B (zh) 2021-03-16
SG11201405535PA (en) 2014-11-27
TWI622099B (zh) 2018-04-21
US20130280923A1 (en) 2013-10-24
TW201344798A (zh) 2013-11-01
WO2013158335A1 (en) 2013-10-24
JP2015521368A (ja) 2015-07-27
US9214346B2 (en) 2015-12-15

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Legal Events

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SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20141119

RJ01 Rejection of invention patent application after publication