JP2015517021A5 - - Google Patents
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- Publication number
- JP2015517021A5 JP2015517021A5 JP2014556662A JP2014556662A JP2015517021A5 JP 2015517021 A5 JP2015517021 A5 JP 2015517021A5 JP 2014556662 A JP2014556662 A JP 2014556662A JP 2014556662 A JP2014556662 A JP 2014556662A JP 2015517021 A5 JP2015517021 A5 JP 2015517021A5
- Authority
- JP
- Japan
- Prior art keywords
- item
- block copolymer
- topcoat
- substrate
- polymer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims description 58
- 229920001400 block copolymer Polymers 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 19
- 229920000052 poly(p-xylylene) Polymers 0.000 claims description 13
- 229920000642 polymer Polymers 0.000 claims description 12
- 238000000137 annealing Methods 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 238000006386 neutralization reaction Methods 0.000 claims description 5
- 239000002904 solvent Substances 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 229920006037 cross link polymer Polymers 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 229910052809 inorganic oxide Inorganic materials 0.000 claims description 2
- 150000003384 small molecules Chemical class 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 239000002086 nanomaterial Substances 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 239000000178 monomer Substances 0.000 description 5
- 230000003472 neutralizing effect Effects 0.000 description 5
- 239000000203 mixture Substances 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Natural products CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229920000428 triblock copolymer Polymers 0.000 description 2
- VRBFTYUMFJWSJY-UHFFFAOYSA-N 28804-46-8 Chemical compound ClC1CC(C=C2)=CC=C2C(Cl)CC2=CC=C1C=C2 VRBFTYUMFJWSJY-UHFFFAOYSA-N 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261597295P | 2012-02-10 | 2012-02-10 | |
| US61/597,295 | 2012-02-10 | ||
| PCT/US2013/025145 WO2013119811A1 (en) | 2012-02-10 | 2013-02-07 | Using chemical vapor deposited films to control domain orientation in block copolymer thin films |
| US13/761,324 US9040121B2 (en) | 2012-02-10 | 2013-02-07 | Using chemical vapor deposited films to control domain orientation in block copolymer thin films |
| US13/761,324 | 2013-02-07 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015517021A JP2015517021A (ja) | 2015-06-18 |
| JP2015517021A5 true JP2015517021A5 (OSRAM) | 2016-03-31 |
| JP6132854B2 JP6132854B2 (ja) | 2017-05-24 |
Family
ID=48945794
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014556662A Expired - Fee Related JP6132854B2 (ja) | 2012-02-10 | 2013-02-07 | ブロックコポリマー薄膜においてドメインの配向性を制御するための化学蒸着された膜の使用 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US9040121B2 (OSRAM) |
| JP (1) | JP6132854B2 (OSRAM) |
| KR (1) | KR20140136933A (OSRAM) |
| CN (1) | CN104321700B (OSRAM) |
| SG (1) | SG11201404415VA (OSRAM) |
| TW (1) | TWI478967B (OSRAM) |
| WO (1) | WO2013119811A1 (OSRAM) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6228932B2 (ja) * | 2012-02-10 | 2017-11-08 | ボード・オブ・リージエンツ，ザ・ユニバーシテイ・オブ・テキサス・システム | ナノリソグラフィのためのポリ乳酸／ケイ素含有ブロックコポリマー |
| JP6027912B2 (ja) * | 2013-02-22 | 2016-11-16 | 東京応化工業株式会社 | 相分離構造を含む構造体の製造方法、及びパターン形成方法、並びにトップコート材料 |
| US9382444B2 (en) | 2013-06-24 | 2016-07-05 | Dow Global Technologies Llc | Neutral layer polymers, methods of manufacture thereof and articles comprising the same |
| US9802400B2 (en) * | 2013-06-24 | 2017-10-31 | Dow Global Technologies Llc | Orientation control layer formed on a free top surface of a first block copolymer from a mixture of first and second block copolymers |
| US9064821B2 (en) | 2013-08-23 | 2015-06-23 | Taiwan Semiconductor Manufacturing Co. Ltd. | Silicon dot formation by self-assembly method and selective silicon growth for flash memory |
| US9281203B2 (en) * | 2013-08-23 | 2016-03-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Silicon dot formation by direct self-assembly method for flash memory |
| JP2015170723A (ja) * | 2014-03-06 | 2015-09-28 | Jsr株式会社 | パターン形成方法及び自己組織化組成物 |
| JP6298691B2 (ja) * | 2014-04-09 | 2018-03-20 | 東京応化工業株式会社 | 相分離構造を含む構造体の製造方法及びトップコート膜の成膜方法 |
| KR102284072B1 (ko) * | 2015-01-14 | 2021-08-02 | 한국과학기술원 | 대면적 단일 도메인으로 배열된 유기분자의 수직원기둥 또는 라멜라 구조체의 제조방법 |
| JP6039028B1 (ja) * | 2015-09-11 | 2016-12-07 | 株式会社東芝 | 自己組織化材料及びパターン形成方法 |
| WO2017147185A1 (en) * | 2016-02-23 | 2017-08-31 | Board Of Regents The University Of Texas System | Block copolymers for sub-10 nm patterning |
| US10755942B2 (en) * | 2016-11-02 | 2020-08-25 | Massachusetts Institute Of Technology | Method of forming topcoat for patterning |
| US11008481B1 (en) * | 2017-05-31 | 2021-05-18 | Seagate Technology Llc | Polymer brush reflow for directed self-assembly of block copolymer thin films |
| CN108046970A (zh) * | 2017-12-08 | 2018-05-18 | 壹号元素（广州）科技有限公司 | 氚化派瑞林二聚体及其应用 |
| US12233433B2 (en) * | 2018-04-27 | 2025-02-25 | Raytheon Company | Uniform thin film deposition for poly-p-xylylene |
| CN108610631B (zh) * | 2018-05-07 | 2019-09-10 | 中国科学院化学研究所 | 一种高导热聚酰亚胺薄膜及其制备方法 |
| FR3085956A1 (fr) * | 2018-09-18 | 2020-03-20 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede d’auto-assemblage dirige d’un copolymere a blocs ayant une faible temperature de transition vitreuse |
| FR3102295B1 (fr) * | 2019-10-16 | 2021-11-12 | Centre Nat Rech Scient | Procédé de lithographie par auto-assemblage dirigé |
| CN114855142B (zh) * | 2022-04-18 | 2023-07-25 | 电子科技大学 | 一种低表面能的派瑞林材料及其制备方法 |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6406544B1 (en) | 1988-06-23 | 2002-06-18 | Jeffrey Stewart | Parylene deposition chamber and method of use |
| US5078091A (en) | 1988-06-23 | 1992-01-07 | Jeffrey Stewart | Parylene deposition chamber and method of use |
| US4945856A (en) | 1988-06-23 | 1990-08-07 | Jeffrey Stewart | Parylene deposition chamber |
| US5268033A (en) | 1991-07-01 | 1993-12-07 | Jeffrey Stewart | Table top parylene deposition chamber |
| US5630839A (en) | 1991-10-22 | 1997-05-20 | Pi Medical Corporation | Multi-electrode cochlear implant and method of manufacturing the same |
| US5488833A (en) | 1994-09-26 | 1996-02-06 | Stewart; Jeffrey | Tangential flow cold trap |
| US5641358A (en) | 1995-10-10 | 1997-06-24 | Stewart; Jeffrey | Modular parylene deposition apparatus having vapor deposition chamber extension |
| US5709753A (en) | 1995-10-27 | 1998-01-20 | Specialty Coating Sysetms, Inc. | Parylene deposition apparatus including a heated and cooled dimer crucible |
| US5534068A (en) | 1995-10-27 | 1996-07-09 | Specialty Coating Systems, Inc. | Parylene deposition apparatus including a tapered deposition chamber and dual vacuum outlet pumping arrangement |
| US5556473A (en) | 1995-10-27 | 1996-09-17 | Specialty Coating Systems, Inc. | Parylene deposition apparatus including dry vacuum pump system and downstream cold trap |
| US5536322A (en) | 1995-10-27 | 1996-07-16 | Specialty Coating Systems, Inc. | Parylene deposition apparatus including a heated and cooled support platen and an electrostatic clamping device |
| US5536319A (en) | 1995-10-27 | 1996-07-16 | Specialty Coating Systems, Inc. | Parylene deposition apparatus including an atmospheric shroud and inert gas source |
| US5538758A (en) | 1995-10-27 | 1996-07-23 | Specialty Coating Systems, Inc. | Method and apparatus for the deposition of parylene AF4 onto semiconductor wafers |
| US5536321A (en) | 1995-10-27 | 1996-07-16 | Specialty Coating Systems, Inc. | Parylene deposition apparatus including a post-pyrolysis filtering chamber and a deposition chamber inlet filter |
| US5812158A (en) | 1996-01-18 | 1998-09-22 | Lexmark International, Inc. | Coated nozzle plate for ink jet printing |
| US6521324B1 (en) * | 1999-11-30 | 2003-02-18 | 3M Innovative Properties Company | Thermal transfer of microstructured layers |
| US6737224B2 (en) | 2001-04-17 | 2004-05-18 | Jeffrey Stewart | Method of preparing thin supported films by vacuum deposition |
| KR20090031349A (ko) * | 2006-04-28 | 2009-03-25 | 폴리셋 컴파니, 인코퍼레이티드 | 재분배층 적용을 위한 실록산 에폭시 중합체 |
| JP4673266B2 (ja) * | 2006-08-03 | 2011-04-20 | 日本電信電話株式会社 | パターン形成方法及びモールド |
| US7763319B2 (en) * | 2008-01-11 | 2010-07-27 | International Business Machines Corporation | Method of controlling orientation of domains in block copolymer films |
| US8999492B2 (en) | 2008-02-05 | 2015-04-07 | Micron Technology, Inc. | Method to produce nanometer-sized features with directed assembly of block copolymers |
| JP2010115832A (ja) * | 2008-11-12 | 2010-05-27 | Panasonic Corp | ブロックコポリマーの自己組織化促進方法及びそれを用いたブロックコポリマーの自己組織化パターン形成方法 |
| US8623458B2 (en) | 2009-12-18 | 2014-01-07 | International Business Machines Corporation | Methods of directed self-assembly, and layered structures formed therefrom |
| WO2011116223A1 (en) * | 2010-03-18 | 2011-09-22 | Board Of Regents The University Of Texas System | Silicon-containing block co-polymers, methods for synthesis and use |
| JP4815011B2 (ja) * | 2010-12-27 | 2011-11-16 | パナソニック株式会社 | ブロックコポリマーの自己組織化促進方法及びそれを用いたブロックコポリマーの自己組織化パターン形成方法 |
| US9299381B2 (en) * | 2011-02-07 | 2016-03-29 | Wisconsin Alumni Research Foundation | Solvent annealing block copolymers on patterned substrates |
| KR101999870B1 (ko) * | 2011-09-15 | 2019-10-02 | 위스콘신 얼럼나이 리서어치 화운데이션 | 화학적으로 패턴화된 표면과 제2 표면 사이의 블록 공중합체 막의 유도 조립 |
| JP6228932B2 (ja) * | 2012-02-10 | 2017-11-08 | ボード・オブ・リージエンツ，ザ・ユニバーシテイ・オブ・テキサス・システム | ナノリソグラフィのためのポリ乳酸／ケイ素含有ブロックコポリマー |
-
2013
- 2013-02-07 CN CN201380013521.4A patent/CN104321700B/zh not_active Expired - Fee Related
- 2013-02-07 WO PCT/US2013/025145 patent/WO2013119811A1/en not_active Ceased
- 2013-02-07 KR KR20147024161A patent/KR20140136933A/ko not_active Withdrawn
- 2013-02-07 JP JP2014556662A patent/JP6132854B2/ja not_active Expired - Fee Related
- 2013-02-07 US US13/761,324 patent/US9040121B2/en not_active Expired - Fee Related
- 2013-02-07 TW TW102104919A patent/TWI478967B/zh not_active IP Right Cessation
- 2013-02-07 SG SG11201404415VA patent/SG11201404415VA/en unknown
-
2015
- 2015-04-28 US US14/698,253 patent/US10167410B2/en not_active Expired - Fee Related
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