JP2015513219A5 - - Google Patents

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Publication number
JP2015513219A5
JP2015513219A5 JP2014560402A JP2014560402A JP2015513219A5 JP 2015513219 A5 JP2015513219 A5 JP 2015513219A5 JP 2014560402 A JP2014560402 A JP 2014560402A JP 2014560402 A JP2014560402 A JP 2014560402A JP 2015513219 A5 JP2015513219 A5 JP 2015513219A5
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chuck
alignment
measuring
sensor
axis
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JP2014560402A
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Japanese (ja)
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JP2015513219A (ja
JP6219320B2 (ja
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Priority claimed from PCT/EP2013/054782 external-priority patent/WO2013132081A2/en
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Publication of JP2015513219A5 publication Critical patent/JP2015513219A5/ja
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JP2014560402A 2012-03-08 2013-03-08 ウェーハなどのターゲットを処理するためのリソグラフィシステム及び方法 Active JP6219320B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261608524P 2012-03-08 2012-03-08
US61/608,524 2012-03-08
PCT/EP2013/054782 WO2013132081A2 (en) 2012-03-08 2013-03-08 Lithography system and method for processing a target, such as a wafer

Publications (3)

Publication Number Publication Date
JP2015513219A JP2015513219A (ja) 2015-04-30
JP2015513219A5 true JP2015513219A5 (enExample) 2016-04-28
JP6219320B2 JP6219320B2 (ja) 2017-10-25

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JP2014560402A Active JP6219320B2 (ja) 2012-03-08 2013-03-08 ウェーハなどのターゲットを処理するためのリソグラフィシステム及び方法

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US (2) US9760028B2 (enExample)
EP (1) EP2823361B1 (enExample)
JP (1) JP6219320B2 (enExample)
CN (1) CN104272194B (enExample)
NL (1) NL2010415C2 (enExample)
TW (1) TWI573174B (enExample)
WO (1) WO2013132081A2 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6100241B2 (ja) 2011-04-22 2017-03-22 マッパー・リソグラフィー・アイピー・ビー．ブイ． 部分的な反射位置マークを有する基板を使用したリソグラフィシステムにおける位置決定
TW201248336A (en) 2011-04-22 2012-12-01 Mapper Lithography Ip Bv Lithography system for processing a target, such as a wafer, and a method for operating a lithography system for processing a target, such as a wafer
WO2012158025A2 (en) * 2011-05-13 2012-11-22 Mapper Lithography Ip B.V. Lithography system for processing at least a part of a target
US9484188B2 (en) * 2015-03-11 2016-11-01 Mapper Lithography Ip B.V. Individual beam pattern placement verification in multiple beam lithography
KR101993670B1 (ko) * 2016-03-17 2019-06-27 주식회사 이오테크닉스 촬영 방법 및 촬영 방법을 이용한 대상물 정렬 방법
US9892885B2 (en) * 2016-03-24 2018-02-13 Kla-Tencor Corporation System and method for drift compensation on an electron beam based characterization tool
US10866531B2 (en) 2016-10-04 2020-12-15 Asml Netherlands B.V. Athermalization of an alignment system
CN109390268B (zh) * 2017-08-10 2023-02-24 台湾积体电路制造股份有限公司 具有微粒凹口的夹盘的晶圆台、处理工具与使用晶圆台的方法
US10585360B2 (en) * 2017-08-25 2020-03-10 Applied Materials, Inc. Exposure system alignment and calibration method
US11740564B2 (en) * 2020-06-18 2023-08-29 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography apparatus and method using the same
CN112606209B (zh) * 2020-09-07 2022-04-22 厦门天润锦龙建材有限公司 对准防泄漏系统
US12021058B2 (en) 2021-01-29 2024-06-25 Pink Gmbh Thermosysteme System and method for connecting electronic assemblies
CN117280281A (zh) * 2021-05-04 2023-12-22 Asml荷兰有限公司 量测装置和光刻装置
CN115597510A (zh) * 2021-07-07 2023-01-13 长鑫存储技术有限公司（Cn） 量测装置、量测补偿系统、量测方法及量测补偿方法
US20230010284A1 (en) * 2021-07-07 2023-01-12 Changxin Memory Technologies, Inc. Measurement apparatus, measurement compensation system, measurement method and measurement compensation method
EP4310885A1 (en) * 2022-07-21 2024-01-24 ASML Netherlands B.V. Electron-optical apparatus and method of obtaining topographical information about a sample surface
CN116466551A (zh) * 2023-04-17 2023-07-21 合肥芯碁微电子装备股份有限公司 背面对准装置及其方法和曝光设备

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3218581B2 (ja) * 1992-09-14 2001-10-15 株式会社ニコン 位置決め方法、該方法を用いた露光方法及びデバイス製造方法、並びに前記製造方法で製造されたデバイス
US6198527B1 (en) 1992-09-14 2001-03-06 Nikon Corporation Projection exposure apparatus and exposure method
JPH09306802A (ja) * 1996-05-10 1997-11-28 Nikon Corp 投影露光装置
US5920378A (en) 1995-03-14 1999-07-06 Nikon Corporation Projection exposure apparatus
JP3927620B2 (ja) 1996-06-12 2007-06-13 キヤノン株式会社 電子ビーム露光方法及びそれを用いたデバイス製造方法
US5929454A (en) 1996-06-12 1999-07-27 Canon Kabushiki Kaisha Position detection apparatus, electron beam exposure apparatus, and methods associated with them
CN1144263C (zh) 1996-11-28 2004-03-31 株式会社尼康 曝光装置以及曝光方法
JP4029180B2 (ja) * 1996-11-28 2008-01-09 株式会社ニコン 投影露光装置及び投影露光方法
JPH11195584A (ja) 1997-12-26 1999-07-21 Nikon Corp 走査型露光装置及び走査露光方法、並びにデバイス製造方法
AU3534299A (en) * 1998-04-22 1999-11-08 Nikon Corporation Exposure method and exposure system
JP2000114137A (ja) 1998-09-30 2000-04-21 Advantest Corp 電子ビーム露光装置及びアライメント方法
JP4579376B2 (ja) * 2000-06-19 2010-11-10 キヤノン株式会社 露光装置およびデバイス製造方法
JP3862639B2 (ja) 2002-08-30 2006-12-27 キヤノン株式会社 露光装置
US7242455B2 (en) * 2002-12-10 2007-07-10 Nikon Corporation Exposure apparatus and method for producing device
JP4421836B2 (ja) 2003-03-28 2010-02-24 キヤノン株式会社 露光装置及びデバイス製造方法
JP2004311659A (ja) 2003-04-04 2004-11-04 Nikon Corp 荷電粒子線装置の調整方法及び荷電粒子線装置
JP4738723B2 (ja) 2003-08-06 2011-08-03 キヤノン株式会社 マルチ荷電粒子線描画装置、荷電粒子線の電流の測定方法及びデバイス製造方法
US7256871B2 (en) * 2004-07-27 2007-08-14 Asml Netherlands B.V. Lithographic apparatus and method for calibrating the same
EP1791169A4 (en) * 2004-08-31 2011-03-02 Nikon Corp ALIGNMENT PROCESS, DEVELOPMENT SYSTEM, SUBSTRATED REPEATABILITY MEASURING METHOD, POSITION MEASURING METHOD, EXPOSURE METHOD, SUBSTRATE PROCESSING DEVICE, MEASURING METHOD AND MEASURING DEVICE
JP4657740B2 (ja) 2005-01-26 2011-03-23 キヤノン株式会社 荷電粒子線光学系用収差測定装置、該収差測定装置を具備する荷電粒子線露光装置及び該装置を用いたデバイス製造方法
JP2006313885A (ja) * 2005-04-04 2006-11-16 Canon Inc 露光装置
US20090033896A1 (en) * 2005-06-28 2009-02-05 Hiroyuki Nagasaka Exposure apparatus and method, and device manufacturing method
EP3267259A1 (en) * 2006-02-21 2018-01-10 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
JP4741408B2 (ja) 2006-04-27 2011-08-03 株式会社荏原製作所 試料パターン検査装置におけるｘｙ座標補正装置及び方法
KR101477448B1 (ko) 2006-08-31 2014-12-29 가부시키가이샤 니콘 이동체 구동 방법 및 이동체 구동 시스템, 패턴 형성 방법 및 장치, 노광 방법 및 장치, 그리고 디바이스 제조 방법
TWI623825B (zh) 2006-09-01 2018-05-11 Nikon Corporation 曝光裝置及方法、以及元件製造方法
US20080079920A1 (en) * 2006-09-29 2008-04-03 Heiko Hommen Wafer exposure device and method
JPWO2009028157A1 (ja) * 2007-08-24 2010-11-25 株式会社ニコン 移動体駆動方法及び移動体駆動システム、並びにパターン形成方法及びパターン形成装置
JP2009099873A (ja) * 2007-10-18 2009-05-07 Canon Inc 露光装置およびデバイス製造方法
CN101158818A (zh) * 2007-11-16 2008-04-09 上海微电子装备有限公司 一种对准装置与对准方法、像质检测方法
SG185261A1 (en) 2007-12-11 2012-11-29 Nikon Corp Movable body apparatus, exposure apparatus and pattern formation apparatus, and device manufacturing method
US7897942B1 (en) 2007-12-20 2011-03-01 Kla-Tencor Corporation Dynamic tracking of wafer motion and distortion during lithography
CN101487985B (zh) * 2009-02-18 2011-06-29 上海微电子装备有限公司 用于光刻设备的对准标记搜索系统及其对准标记搜索方法
NL2005389A (en) * 2009-10-21 2011-04-26 Asml Netherlands Bv Lithographic apparatus, device manufacturing method, and method of applying a pattern to a substrate.
US8513959B2 (en) 2009-12-31 2013-08-20 Mapper Lithography Ip B.V. Integrated sensor system
TW201248336A (en) 2011-04-22 2012-12-01 Mapper Lithography Ip Bv Lithography system for processing a target, such as a wafer, and a method for operating a lithography system for processing a target, such as a wafer
JP2014120653A (ja) * 2012-12-18 2014-06-30 Canon Inc 位置決め装置、リソグラフィー装置、それを用いた物品の製造方法

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