JP2012004461A5 - - Google Patents

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Publication number
JP2012004461A5
JP2012004461A5 JP2010139945A JP2010139945A JP2012004461A5 JP 2012004461 A5 JP2012004461 A5 JP 2012004461A5 JP 2010139945 A JP2010139945 A JP 2010139945A JP 2010139945 A JP2010139945 A JP 2010139945A JP 2012004461 A5 JP2012004461 A5 JP 2012004461A5
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JP
Japan
Prior art keywords
charged particle
reference mark
stage
particle beam
angle
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Application number
JP2010139945A
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English (en)
Japanese (ja)
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JP2012004461A (ja
JP5506560B2 (ja
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Application filed filed Critical
Priority to JP2010139945A priority Critical patent/JP5506560B2/ja
Priority claimed from JP2010139945A external-priority patent/JP5506560B2/ja
Priority to EP11164727.7A priority patent/EP2397906A3/en
Priority to US13/162,979 priority patent/US8618515B2/en
Publication of JP2012004461A publication Critical patent/JP2012004461A/ja
Publication of JP2012004461A5 publication Critical patent/JP2012004461A5/ja
Application granted granted Critical
Publication of JP5506560B2 publication Critical patent/JP5506560B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2010139945A 2010-06-18 2010-06-18 描画装置及びデバイス製造方法 Expired - Fee Related JP5506560B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010139945A JP5506560B2 (ja) 2010-06-18 2010-06-18 描画装置及びデバイス製造方法
EP11164727.7A EP2397906A3 (en) 2010-06-18 2011-05-04 Lithography apparatus and device manufacturing method
US13/162,979 US8618515B2 (en) 2010-06-18 2011-06-17 Lithography apparatus and device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010139945A JP5506560B2 (ja) 2010-06-18 2010-06-18 描画装置及びデバイス製造方法

Publications (3)

Publication Number Publication Date
JP2012004461A JP2012004461A (ja) 2012-01-05
JP2012004461A5 true JP2012004461A5 (enExample) 2013-08-01
JP5506560B2 JP5506560B2 (ja) 2014-05-28

Family

ID=44787430

Family Applications (1)

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JP2010139945A Expired - Fee Related JP5506560B2 (ja) 2010-06-18 2010-06-18 描画装置及びデバイス製造方法

Country Status (3)

Country Link
US (1) US8618515B2 (enExample)
EP (1) EP2397906A3 (enExample)
JP (1) JP5506560B2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5506560B2 (ja) * 2010-06-18 2014-05-28 キヤノン株式会社 描画装置及びデバイス製造方法
JP2013140846A (ja) * 2011-12-28 2013-07-18 Canon Inc 描画装置及び物品の製造方法
JP2013183017A (ja) * 2012-03-01 2013-09-12 Canon Inc 描画装置、基準素子、及び物品製造方法
WO2013132064A2 (en) * 2012-03-08 2013-09-12 Mapper Lithography Ip B.V. Charged particle lithography system with alignment sensor and beam measurement sensor
JP2014220263A (ja) * 2013-04-30 2014-11-20 キヤノン株式会社 リソグラフィ装置、及び物品の製造方法
TWI690968B (zh) * 2014-03-07 2020-04-11 美商應用材料股份有限公司 用於修改基板表面的掠射角電漿處理
WO2015171335A1 (en) 2014-05-06 2015-11-12 Applied Materials, Inc. Directional treatment for multi-dimensional device processing
JP2022110461A (ja) * 2021-01-18 2022-07-29 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及びその調整方法
JP2023039178A (ja) * 2021-09-08 2023-03-20 日本電子株式会社 荷電粒子ビーム描画装置及び荷電粒子ビーム描画装置の制御方法
KR20250011146A (ko) * 2022-07-05 2025-01-21 가부시키가이샤 뉴플레어 테크놀로지 멀티 빔 화상 취득 장치, 및 멀티 빔 화상 취득 방법
US20240304413A1 (en) * 2023-03-08 2024-09-12 Ims Nanofabrication Gmbh Optimizing Image Distortion in a Multi Beam Charged Particle Processing Apparatus

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JP5227512B2 (ja) * 2006-12-27 2013-07-03 株式会社日立ハイテクノロジーズ 電子線応用装置
JP5497980B2 (ja) * 2007-06-29 2014-05-21 株式会社日立ハイテクノロジーズ 荷電粒子線応用装置、及び試料検査方法
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JP5744601B2 (ja) * 2010-04-20 2015-07-08 キヤノン株式会社 電子線描画装置及びデバイス製造方法
JP5506560B2 (ja) * 2010-06-18 2014-05-28 キヤノン株式会社 描画装置及びデバイス製造方法
JP2013140846A (ja) * 2011-12-28 2013-07-18 Canon Inc 描画装置及び物品の製造方法

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