JP2015511776A5 - - Google Patents
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- Publication number
- JP2015511776A5 JP2015511776A5 JP2015503124A JP2015503124A JP2015511776A5 JP 2015511776 A5 JP2015511776 A5 JP 2015511776A5 JP 2015503124 A JP2015503124 A JP 2015503124A JP 2015503124 A JP2015503124 A JP 2015503124A JP 2015511776 A5 JP2015511776 A5 JP 2015511776A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light emitting
- type contact
- emitting device
- gan
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 229910002601 GaN Inorganic materials 0.000 claims description 27
- 230000004888 barrier function Effects 0.000 claims description 24
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 5
- 238000002347 injection Methods 0.000 claims 3
- 239000007924 injection Substances 0.000 claims 3
- 239000010410 layer Substances 0.000 description 53
- 239000000203 mixture Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2012-0032195 | 2012-03-29 | ||
| KR20120032195 | 2012-03-29 | ||
| KR1020130025989A KR101997020B1 (ko) | 2012-03-29 | 2013-03-12 | 근자외선 발광 소자 |
| KR10-2013-0025989 | 2013-03-12 | ||
| PCT/KR2013/002647 WO2013147552A1 (en) | 2012-03-29 | 2013-03-29 | Near uv light emitting device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017241150A Division JP6587673B2 (ja) | 2012-03-29 | 2017-12-15 | 発光素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015511776A JP2015511776A (ja) | 2015-04-20 |
| JP2015511776A5 true JP2015511776A5 (enExample) | 2016-05-19 |
| JP6484551B2 JP6484551B2 (ja) | 2019-03-13 |
Family
ID=49632874
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015503124A Active JP6484551B2 (ja) | 2012-03-29 | 2013-03-29 | 発光素子 |
| JP2017241150A Active JP6587673B2 (ja) | 2012-03-29 | 2017-12-15 | 発光素子 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017241150A Active JP6587673B2 (ja) | 2012-03-29 | 2017-12-15 | 発光素子 |
Country Status (3)
| Country | Link |
|---|---|
| JP (2) | JP6484551B2 (enExample) |
| KR (1) | KR101997020B1 (enExample) |
| CN (1) | CN104205367B (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102160070B1 (ko) * | 2013-10-28 | 2020-09-25 | 서울바이오시스 주식회사 | 근자외선 발광 소자 |
| DE102016112294A1 (de) * | 2016-07-05 | 2018-01-11 | Osram Opto Semiconductors Gmbh | Halbleiterschichtenfolge |
| DE102016117477A1 (de) * | 2016-09-16 | 2018-03-22 | Osram Opto Semiconductors Gmbh | Halbleiterschichtenfolge |
| DE102017104370A1 (de) * | 2017-03-02 | 2018-09-06 | Osram Opto Semiconductors Gmbh | Halbleiterkörper |
| FR3076399B1 (fr) * | 2017-12-28 | 2020-01-24 | Aledia | Dispositif optoelectronique comprenant des diodes electroluminescentes tridimensionnelles |
| JP6927112B2 (ja) * | 2018-03-27 | 2021-08-25 | 豊田合成株式会社 | 半導体装置の製造方法 |
| CN110581204A (zh) * | 2019-08-28 | 2019-12-17 | 映瑞光电科技(上海)有限公司 | GaN基发光二极管外延结构及其制备方法 |
| CN111403564B (zh) * | 2020-03-31 | 2024-11-05 | 厦门乾照半导体科技有限公司 | 一种红外发光二极管外延结构、芯片及其制作方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09232629A (ja) * | 1996-02-26 | 1997-09-05 | Toshiba Corp | 半導体素子 |
| JP3551101B2 (ja) * | 1999-03-29 | 2004-08-04 | 日亜化学工業株式会社 | 窒化物半導体素子 |
| JP4161603B2 (ja) * | 2001-03-28 | 2008-10-08 | 日亜化学工業株式会社 | 窒化物半導体素子 |
| JP2003046127A (ja) * | 2001-05-23 | 2003-02-14 | Sanyo Electric Co Ltd | 窒化物系半導体発光素子 |
| WO2003041234A1 (en) * | 2001-11-05 | 2003-05-15 | Nichia Corporation | Semiconductor element |
| JP3946541B2 (ja) * | 2002-02-25 | 2007-07-18 | 三菱電線工業株式会社 | 発光装置およびそれを用いた照明装置、ならびに該発光装置の製造方法と設計方法 |
| JP4385746B2 (ja) * | 2003-11-28 | 2009-12-16 | 三菱化学株式会社 | 窒化物系半導体素子の製造方法 |
| WO2009120990A2 (en) * | 2008-03-27 | 2009-10-01 | Nitek, Inc. | Ultraviolet light emitting diode/laser diode with nested superlattice |
| KR100957750B1 (ko) * | 2008-08-12 | 2010-05-13 | 우리엘에스티 주식회사 | 발광 소자 |
| KR101017396B1 (ko) * | 2008-08-20 | 2011-02-28 | 서울옵토디바이스주식회사 | 변조도핑층을 갖는 발광 다이오드 |
| JP5453780B2 (ja) * | 2008-11-20 | 2014-03-26 | 三菱化学株式会社 | 窒化物半導体 |
| JP5330040B2 (ja) * | 2009-03-17 | 2013-10-30 | 株式会社東芝 | 半導体素子、半導体装置、半導体ウェーハ及び半導体結晶の成長方法 |
| EP2523228B1 (en) * | 2010-01-05 | 2017-04-26 | Seoul Viosys Co., Ltd | Light emitting diode |
-
2013
- 2013-03-12 KR KR1020130025989A patent/KR101997020B1/ko active Active
- 2013-03-29 CN CN201380017852.5A patent/CN104205367B/zh active Active
- 2013-03-29 JP JP2015503124A patent/JP6484551B2/ja active Active
-
2017
- 2017-12-15 JP JP2017241150A patent/JP6587673B2/ja active Active
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