JP6484551B2 - 発光素子 - Google Patents

発光素子 Download PDF

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Publication number
JP6484551B2
JP6484551B2 JP2015503124A JP2015503124A JP6484551B2 JP 6484551 B2 JP6484551 B2 JP 6484551B2 JP 2015503124 A JP2015503124 A JP 2015503124A JP 2015503124 A JP2015503124 A JP 2015503124A JP 6484551 B2 JP6484551 B2 JP 6484551B2
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JP
Japan
Prior art keywords
layer
type contact
light emitting
barrier
gan
Prior art date
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Active
Application number
JP2015503124A
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English (en)
Japanese (ja)
Other versions
JP2015511776A (ja
JP2015511776A5 (enExample
Inventor
スク ハン，チャン
スク ハン，チャン
モク キム，ハ
モク キム，ハ
シク チョ，ヒョ
シク チョ，ヒョ
ソ コ，ミ
ソ コ，ミ
ラム チャ リ，ア
ラム チャ リ，ア
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seoul Viosys Co Ltd
Original Assignee
Seoul Viosys Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seoul Viosys Co Ltd filed Critical Seoul Viosys Co Ltd
Priority claimed from PCT/KR2013/002647 external-priority patent/WO2013147552A1/en
Publication of JP2015511776A publication Critical patent/JP2015511776A/ja
Publication of JP2015511776A5 publication Critical patent/JP2015511776A5/ja
Application granted granted Critical
Publication of JP6484551B2 publication Critical patent/JP6484551B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/30—Polarising elements
    • G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
    • G02B5/3033—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state in the form of a thin sheet or foil, e.g. Polaroid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
JP2015503124A 2012-03-29 2013-03-29 発光素子 Active JP6484551B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
KR10-2012-0032195 2012-03-29
KR20120032195 2012-03-29
KR1020130025989A KR101997020B1 (ko) 2012-03-29 2013-03-12 근자외선 발광 소자
KR10-2013-0025989 2013-03-12
PCT/KR2013/002647 WO2013147552A1 (en) 2012-03-29 2013-03-29 Near uv light emitting device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2017241150A Division JP6587673B2 (ja) 2012-03-29 2017-12-15 発光素子

Publications (3)

Publication Number Publication Date
JP2015511776A JP2015511776A (ja) 2015-04-20
JP2015511776A5 JP2015511776A5 (enExample) 2016-05-19
JP6484551B2 true JP6484551B2 (ja) 2019-03-13

Family

ID=49632874

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2015503124A Active JP6484551B2 (ja) 2012-03-29 2013-03-29 発光素子
JP2017241150A Active JP6587673B2 (ja) 2012-03-29 2017-12-15 発光素子

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2017241150A Active JP6587673B2 (ja) 2012-03-29 2017-12-15 発光素子

Country Status (3)

Country Link
JP (2) JP6484551B2 (enExample)
KR (1) KR101997020B1 (enExample)
CN (1) CN104205367B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102160070B1 (ko) * 2013-10-28 2020-09-25 서울바이오시스 주식회사 근자외선 발광 소자
DE102016112294A1 (de) * 2016-07-05 2018-01-11 Osram Opto Semiconductors Gmbh Halbleiterschichtenfolge
DE102016117477A1 (de) * 2016-09-16 2018-03-22 Osram Opto Semiconductors Gmbh Halbleiterschichtenfolge
DE102017104370A1 (de) * 2017-03-02 2018-09-06 Osram Opto Semiconductors Gmbh Halbleiterkörper
FR3076399B1 (fr) * 2017-12-28 2020-01-24 Aledia Dispositif optoelectronique comprenant des diodes electroluminescentes tridimensionnelles
JP6927112B2 (ja) * 2018-03-27 2021-08-25 豊田合成株式会社 半導体装置の製造方法
CN110581204A (zh) * 2019-08-28 2019-12-17 映瑞光电科技(上海)有限公司 GaN基发光二极管外延结构及其制备方法
CN111403564B (zh) * 2020-03-31 2024-11-05 厦门乾照半导体科技有限公司 一种红外发光二极管外延结构、芯片及其制作方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09232629A (ja) * 1996-02-26 1997-09-05 Toshiba Corp 半導体素子
JP3551101B2 (ja) * 1999-03-29 2004-08-04 日亜化学工業株式会社 窒化物半導体素子
JP4161603B2 (ja) * 2001-03-28 2008-10-08 日亜化学工業株式会社 窒化物半導体素子
JP2003046127A (ja) * 2001-05-23 2003-02-14 Sanyo Electric Co Ltd 窒化物系半導体発光素子
WO2003041234A1 (en) * 2001-11-05 2003-05-15 Nichia Corporation Semiconductor element
JP3946541B2 (ja) * 2002-02-25 2007-07-18 三菱電線工業株式会社 発光装置およびそれを用いた照明装置、ならびに該発光装置の製造方法と設計方法
JP4385746B2 (ja) * 2003-11-28 2009-12-16 三菱化学株式会社 窒化物系半導体素子の製造方法
WO2009120990A2 (en) * 2008-03-27 2009-10-01 Nitek, Inc. Ultraviolet light emitting diode/laser diode with nested superlattice
KR100957750B1 (ko) * 2008-08-12 2010-05-13 우리엘에스티 주식회사 발광 소자
KR101017396B1 (ko) * 2008-08-20 2011-02-28 서울옵토디바이스주식회사 변조도핑층을 갖는 발광 다이오드
JP5453780B2 (ja) * 2008-11-20 2014-03-26 三菱化学株式会社 窒化物半導体
JP5330040B2 (ja) * 2009-03-17 2013-10-30 株式会社東芝 半導体素子、半導体装置、半導体ウェーハ及び半導体結晶の成長方法
EP2523228B1 (en) * 2010-01-05 2017-04-26 Seoul Viosys Co., Ltd Light emitting diode

Also Published As

Publication number Publication date
KR20130111294A (ko) 2013-10-10
JP2015511776A (ja) 2015-04-20
CN104205367B (zh) 2017-06-16
JP2018074173A (ja) 2018-05-10
JP6587673B2 (ja) 2019-10-09
KR101997020B1 (ko) 2019-07-08
CN104205367A (zh) 2014-12-10

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