CN104205367B - 近紫外发光装置 - Google Patents

近紫外发光装置 Download PDF

Info

Publication number
CN104205367B
CN104205367B CN201380017852.5A CN201380017852A CN104205367B CN 104205367 B CN104205367 B CN 104205367B CN 201380017852 A CN201380017852 A CN 201380017852A CN 104205367 B CN104205367 B CN 104205367B
Authority
CN
China
Prior art keywords
layer
density
type contact
gan
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201380017852.5A
Other languages
English (en)
Chinese (zh)
Other versions
CN104205367A (zh
Inventor
韩昌锡
金华睦
崔孝植
高美苏
李阿兰澈
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seoul Viosys Co Ltd
Original Assignee
Seoul Viosys Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seoul Viosys Co Ltd filed Critical Seoul Viosys Co Ltd
Priority claimed from PCT/KR2013/002647 external-priority patent/WO2013147552A1/en
Publication of CN104205367A publication Critical patent/CN104205367A/zh
Application granted granted Critical
Publication of CN104205367B publication Critical patent/CN104205367B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/30—Polarising elements
    • G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
    • G02B5/3033—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state in the form of a thin sheet or foil, e.g. Polaroid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
CN201380017852.5A 2012-03-29 2013-03-29 近紫外发光装置 Active CN104205367B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
KR10-2012-0032195 2012-03-29
KR20120032195 2012-03-29
KR1020130025989A KR101997020B1 (ko) 2012-03-29 2013-03-12 근자외선 발광 소자
KR10-2013-0025989 2013-03-12
PCT/KR2013/002647 WO2013147552A1 (en) 2012-03-29 2013-03-29 Near uv light emitting device

Publications (2)

Publication Number Publication Date
CN104205367A CN104205367A (zh) 2014-12-10
CN104205367B true CN104205367B (zh) 2017-06-16

Family

ID=49632874

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380017852.5A Active CN104205367B (zh) 2012-03-29 2013-03-29 近紫外发光装置

Country Status (3)

Country Link
JP (2) JP6484551B2 (enExample)
KR (1) KR101997020B1 (enExample)
CN (1) CN104205367B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102160070B1 (ko) * 2013-10-28 2020-09-25 서울바이오시스 주식회사 근자외선 발광 소자
DE102016112294A1 (de) * 2016-07-05 2018-01-11 Osram Opto Semiconductors Gmbh Halbleiterschichtenfolge
DE102016117477A1 (de) * 2016-09-16 2018-03-22 Osram Opto Semiconductors Gmbh Halbleiterschichtenfolge
DE102017104370A1 (de) * 2017-03-02 2018-09-06 Osram Opto Semiconductors Gmbh Halbleiterkörper
FR3076399B1 (fr) * 2017-12-28 2020-01-24 Aledia Dispositif optoelectronique comprenant des diodes electroluminescentes tridimensionnelles
JP6927112B2 (ja) * 2018-03-27 2021-08-25 豊田合成株式会社 半導体装置の製造方法
CN110581204A (zh) * 2019-08-28 2019-12-17 映瑞光电科技(上海)有限公司 GaN基发光二极管外延结构及其制备方法
CN111403564B (zh) * 2020-03-31 2024-11-05 厦门乾照半导体科技有限公司 一种红外发光二极管外延结构、芯片及其制作方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1484880A (zh) * 2001-11-05 2004-03-24 ���ǻ�ѧ��ҵ��ʽ���� 氮化物半导体元件
US20110017976A1 (en) * 2008-03-27 2011-01-27 Nitek, Inc Ultraviolet light emitting diode/laser diode with nested superlattice
US20110140079A1 (en) * 2008-08-12 2011-06-16 Wooree Lst Co., Ltd Semiconductor Light Emitting Device
US20110253974A1 (en) * 2008-11-20 2011-10-20 Mitsubishi Chemical Corporation Nitride semiconductor

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09232629A (ja) * 1996-02-26 1997-09-05 Toshiba Corp 半導体素子
JP3551101B2 (ja) * 1999-03-29 2004-08-04 日亜化学工業株式会社 窒化物半導体素子
JP4161603B2 (ja) * 2001-03-28 2008-10-08 日亜化学工業株式会社 窒化物半導体素子
JP2003046127A (ja) * 2001-05-23 2003-02-14 Sanyo Electric Co Ltd 窒化物系半導体発光素子
JP3946541B2 (ja) * 2002-02-25 2007-07-18 三菱電線工業株式会社 発光装置およびそれを用いた照明装置、ならびに該発光装置の製造方法と設計方法
JP4385746B2 (ja) * 2003-11-28 2009-12-16 三菱化学株式会社 窒化物系半導体素子の製造方法
KR101017396B1 (ko) * 2008-08-20 2011-02-28 서울옵토디바이스주식회사 변조도핑층을 갖는 발광 다이오드
JP5330040B2 (ja) * 2009-03-17 2013-10-30 株式会社東芝 半導体素子、半導体装置、半導体ウェーハ及び半導体結晶の成長方法
EP2523228B1 (en) * 2010-01-05 2017-04-26 Seoul Viosys Co., Ltd Light emitting diode

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1484880A (zh) * 2001-11-05 2004-03-24 ���ǻ�ѧ��ҵ��ʽ���� 氮化物半导体元件
US20110017976A1 (en) * 2008-03-27 2011-01-27 Nitek, Inc Ultraviolet light emitting diode/laser diode with nested superlattice
US20110140079A1 (en) * 2008-08-12 2011-06-16 Wooree Lst Co., Ltd Semiconductor Light Emitting Device
US20110253974A1 (en) * 2008-11-20 2011-10-20 Mitsubishi Chemical Corporation Nitride semiconductor

Also Published As

Publication number Publication date
KR20130111294A (ko) 2013-10-10
JP2015511776A (ja) 2015-04-20
JP2018074173A (ja) 2018-05-10
JP6587673B2 (ja) 2019-10-09
JP6484551B2 (ja) 2019-03-13
KR101997020B1 (ko) 2019-07-08
CN104205367A (zh) 2014-12-10

Similar Documents

Publication Publication Date Title
JP5523459B2 (ja) 変調ドーピング層を有する発光ダイオード
KR102191213B1 (ko) 자외선 발광 소자
CN104205367B (zh) 近紫外发光装置
US10177273B2 (en) UV light emitting device
CN104919604B (zh) 氮化物半导体发光元件
US9224913B2 (en) Near UV light emitting device
CN103682001B (zh) 第iii族氮化物半导体发光器件
US10164150B2 (en) Near UV light emitting device
US9312447B2 (en) Near UV light emitting device
JP5322523B2 (ja) 発光素子及びその製造方法
CN104576855B (zh) 近紫外光发射装置
CN106415860B (zh) 氮化物半导体发光元件
KR20140002910A (ko) 근자외선 발광 소자
KR20130102210A (ko) 질화물 반도체 발광소자 및 그 제조방법
KR20100024154A (ko) 발광 다이오드
CN110050330B (zh) Iii族氮化物半导体
JP2008227103A (ja) ＧａＮ系半導体発光素子
US20240170607A1 (en) Semiconductor structure
US20240120440A1 (en) Semiconductor structure

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant