KR101997020B1 - 근자외선 발광 소자 - Google Patents

근자외선 발광 소자 Download PDF

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KR101997020B1
KR101997020B1 KR1020130025989A KR20130025989A KR101997020B1 KR 101997020 B1 KR101997020 B1 KR 101997020B1 KR 1020130025989 A KR1020130025989 A KR 1020130025989A KR 20130025989 A KR20130025989 A KR 20130025989A KR 101997020 B1 KR101997020 B1 KR 101997020B1
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South Korea
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contact layer
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Korean (ko)
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KR20130111294A (ko
Inventor
한창석
김화목
최효식
고미소
이아람차
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서울바이오시스 주식회사
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Priority to JP2015503124A priority Critical patent/JP6484551B2/ja
Priority to US13/853,361 priority patent/US9224913B2/en
Priority to PCT/KR2013/002647 priority patent/WO2013147552A1/en
Priority to CN201380017852.5A priority patent/CN104205367B/zh
Publication of KR20130111294A publication Critical patent/KR20130111294A/ko
Priority to US14/526,110 priority patent/US9312447B2/en
Priority to US14/811,253 priority patent/US10177273B2/en
Priority to US15/096,252 priority patent/US10164150B2/en
Priority to JP2017241150A priority patent/JP6587673B2/ja
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Publication of KR101997020B1 publication Critical patent/KR101997020B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/30—Polarising elements
    • G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
    • G02B5/3033—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state in the form of a thin sheet or foil, e.g. Polaroid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
KR1020130025989A 2012-03-29 2013-03-12 근자외선 발광 소자 Active KR101997020B1 (ko)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2015503124A JP6484551B2 (ja) 2012-03-29 2013-03-29 発光素子
US13/853,361 US9224913B2 (en) 2012-03-29 2013-03-29 Near UV light emitting device
PCT/KR2013/002647 WO2013147552A1 (en) 2012-03-29 2013-03-29 Near uv light emitting device
CN201380017852.5A CN104205367B (zh) 2012-03-29 2013-03-29 近紫外发光装置
US14/526,110 US9312447B2 (en) 2012-03-29 2014-10-28 Near UV light emitting device
US14/811,253 US10177273B2 (en) 2012-03-29 2015-07-28 UV light emitting device
US15/096,252 US10164150B2 (en) 2012-03-29 2016-04-11 Near UV light emitting device
JP2017241150A JP6587673B2 (ja) 2012-03-29 2017-12-15 発光素子

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020120032195 2012-03-29
KR20120032195 2012-03-29

Publications (2)

Publication Number Publication Date
KR20130111294A KR20130111294A (ko) 2013-10-10
KR101997020B1 true KR101997020B1 (ko) 2019-07-08

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KR1020130025989A Active KR101997020B1 (ko) 2012-03-29 2013-03-12 근자외선 발광 소자

Country Status (3)

Country Link
JP (2) JP6484551B2 (enExample)
KR (1) KR101997020B1 (enExample)
CN (1) CN104205367B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102160070B1 (ko) * 2013-10-28 2020-09-25 서울바이오시스 주식회사 근자외선 발광 소자
DE102016112294A1 (de) * 2016-07-05 2018-01-11 Osram Opto Semiconductors Gmbh Halbleiterschichtenfolge
DE102016117477A1 (de) * 2016-09-16 2018-03-22 Osram Opto Semiconductors Gmbh Halbleiterschichtenfolge
DE102017104370A1 (de) * 2017-03-02 2018-09-06 Osram Opto Semiconductors Gmbh Halbleiterkörper
FR3076399B1 (fr) * 2017-12-28 2020-01-24 Aledia Dispositif optoelectronique comprenant des diodes electroluminescentes tridimensionnelles
JP6927112B2 (ja) * 2018-03-27 2021-08-25 豊田合成株式会社 半導体装置の製造方法
CN110581204A (zh) * 2019-08-28 2019-12-17 映瑞光电科技(上海)有限公司 GaN基发光二极管外延结构及其制备方法
CN111403564B (zh) * 2020-03-31 2024-11-05 厦门乾照半导体科技有限公司 一种红外发光二极管外延结构、芯片及其制作方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003115642A (ja) 2001-03-28 2003-04-18 Nichia Chem Ind Ltd 窒化物半導体素子
US20050127391A1 (en) * 2001-11-05 2005-06-16 Nichia Corporation Semiconductor element
US20110017976A1 (en) * 2008-03-27 2011-01-27 Nitek, Inc Ultraviolet light emitting diode/laser diode with nested superlattice
US20110253974A1 (en) 2008-11-20 2011-10-20 Mitsubishi Chemical Corporation Nitride semiconductor

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09232629A (ja) * 1996-02-26 1997-09-05 Toshiba Corp 半導体素子
JP3551101B2 (ja) * 1999-03-29 2004-08-04 日亜化学工業株式会社 窒化物半導体素子
JP2003046127A (ja) * 2001-05-23 2003-02-14 Sanyo Electric Co Ltd 窒化物系半導体発光素子
JP3946541B2 (ja) * 2002-02-25 2007-07-18 三菱電線工業株式会社 発光装置およびそれを用いた照明装置、ならびに該発光装置の製造方法と設計方法
JP4385746B2 (ja) * 2003-11-28 2009-12-16 三菱化学株式会社 窒化物系半導体素子の製造方法
KR100957750B1 (ko) * 2008-08-12 2010-05-13 우리엘에스티 주식회사 발광 소자
KR101017396B1 (ko) * 2008-08-20 2011-02-28 서울옵토디바이스주식회사 변조도핑층을 갖는 발광 다이오드
JP5330040B2 (ja) * 2009-03-17 2013-10-30 株式会社東芝 半導体素子、半導体装置、半導体ウェーハ及び半導体結晶の成長方法
EP2523228B1 (en) * 2010-01-05 2017-04-26 Seoul Viosys Co., Ltd Light emitting diode

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003115642A (ja) 2001-03-28 2003-04-18 Nichia Chem Ind Ltd 窒化物半導体素子
US20050127391A1 (en) * 2001-11-05 2005-06-16 Nichia Corporation Semiconductor element
US20110017976A1 (en) * 2008-03-27 2011-01-27 Nitek, Inc Ultraviolet light emitting diode/laser diode with nested superlattice
US20110253974A1 (en) 2008-11-20 2011-10-20 Mitsubishi Chemical Corporation Nitride semiconductor

Also Published As

Publication number Publication date
KR20130111294A (ko) 2013-10-10
JP2015511776A (ja) 2015-04-20
CN104205367B (zh) 2017-06-16
JP2018074173A (ja) 2018-05-10
JP6587673B2 (ja) 2019-10-09
JP6484551B2 (ja) 2019-03-13
CN104205367A (zh) 2014-12-10

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