JP2015508941A - オプトエレクトロニクス半導体チップ - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 178
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 114
- 239000000463 material Substances 0.000 claims abstract description 94
- 239000011810 insulating material Substances 0.000 claims description 37
- 238000003892 spreading Methods 0.000 claims description 31
- 230000007480 spreading Effects 0.000 claims description 31
- 230000005670 electromagnetic radiation Effects 0.000 claims description 21
- 238000011049 filling Methods 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 238000004020 luminiscence type Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 abstract description 11
- 238000000034 method Methods 0.000 description 49
- 238000004519 manufacturing process Methods 0.000 description 38
- 230000005855 radiation Effects 0.000 description 24
- 238000002161 passivation Methods 0.000 description 16
- 238000005530 etching Methods 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 4
- 239000011258 core-shell material Substances 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 238000007704 wet chemistry method Methods 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000001311 chemical methods and process Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012777 electrically insulating material Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- -1 nitride compound Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000000415 inactivating effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002073 nanorod Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
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- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
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- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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Abstract
Description
本特許出願は、独国特許出願第102012101718.2号の優先権を主張し、この文書の開示内容は参照によって本明細書に組み込まれている。
Claims (16)
- オプトエレクトロニクス半導体チップであって、
− 互いに距離を隔てて配置されている、少なくとも1つの活性領域(1)、特に、多数の活性領域(1)と、
− 前記活性領域(1)の下面(1a)に配置されているキャリア(2)と、
を備えており、
− 前記活性領域(1)の1つが主延在方向(R)を有し、
− 前記活性領域(1)が、第1の半導体材料によって形成されているコア領域(10)を有し、
− 前記活性領域(1)が活性層(11)を有し、前記活性層(11)が、少なくとも、前記活性領域(1)の前記主延在方向(R)を横切る方向(x,y)に、前記コア領域(10)を覆っており、
− 前記活性領域(1)がカバー層(12)を有し、前記カバー層(12)が、第2の半導体材料によって形成されており、少なくとも、前記活性領域(1)の前記主延在方向(R)を横切る方向(x,y)に、前記活性層(11)を覆っている、
オプトエレクトロニクス半導体チップ。 - 多数の活性領域(1)を備えており、
− 前記キャリア(2)とは反対側の各活性領域(1)の上面(1b)において、前記活性領域(1)の前記コア領域(10)に前記活性層(11)が存在せず、前記コア領域(10)が導電性コンタクト層(6)に直接接触しており、
− 前記コンタクト層(6)が、前記活性領域(1)の少なくとも大部分、またはすべての前記活性領域(1)の前記コア領域(10)に直接接触しており、前記コンタクト層(6)が、部分的に、前記多数の活性領域(1)の側の前記キャリア(2)の外面(2a)に平行に、または実質的に平行に延びる平面内に、延在している、
請求項1に記載のオプトエレクトロニクス半導体チップ。 - 少なくとも前記第1の半導体材料が、前記キャリア(2)の上にエピタキシャルに堆積されている、
請求項1または請求項2のいずれかに記載のオプトエレクトロニクス半導体チップ。 - 前記第1の半導体材料の成長方向(z)が、前記主延在方向(R)に平行または実質的に平行である、
請求項3に記載のオプトエレクトロニクス半導体チップ。 - 前記活性領域(1)が、前記主延在方向(R)において求められる長さ(L)を有し、前記活性領域(1)が、前記主延在方向(R)に垂直な平面内において求められる直径(D)を有し、直径(D)に対する長さ(L)の比が、少なくとも1である、
請求項1から請求項4のいずれかに記載のオプトエレクトロニクス半導体チップ。 - 前記活性領域(1)が電流拡散層(13)を有し、前記電流拡散層(13)が、少なくとも、前記主延在方向(R)を横切る方向(x,y)に、前記カバー層(12)を覆っている、
請求項1から請求項5のいずれかに記載のオプトエレクトロニクス半導体チップ。 - 前記電流拡散層(13)が、動作時に前記活性層(11)において生成される電磁放射に対して透過性であり、特に、透明導電性酸化物によって形成されている、
請求項6に記載のオプトエレクトロニクス半導体チップ。 - 前記電流拡散層(13)が、前記活性領域(1)の前記長さ(L)の少なくとも大部分にわたり延在している、
請求項6または請求項7のいずれかに記載のオプトエレクトロニクス半導体チップ。 - 前記多数の活性領域(1)の間に絶縁材料(4)が配置されており、前記絶縁材料(4)が、少なくとも、前記主延在方向(R)を横切る方向(x,y)に、前記活性領域(1)を囲んでいる、
請求項1から請求項8のいずれかに記載のオプトエレクトロニクス半導体チップ。 - 前記絶縁材料(4)が、少なくとも部分的に、前記活性領域の外面、特に、前記電流拡散層(13)に、直接隣接している、
請求項9に記載のオプトエレクトロニクス半導体チップ。 - 前記多数の活性領域(1)の側の前記キャリア(2)の面にマスク層(5)が配置されており、前記マスク層(5)が前記活性領域(1)それぞれに対して前記キャリア(2)に通じる開口部(5a)を有し、前記第1の半導体材料が前記開口部を満たしている、
請求項1から請求項10のいずれかに記載のオプトエレクトロニクス半導体チップ。 - 前記マスク層(5)が、部分的に、前記絶縁材料(4)に隣接している、
請求項11に記載のオプトエレクトロニクス半導体チップ。 - 前記キャリア(2)とは反対側の前記活性領域(1)の前記上面(1b)において、前記コア領域(10)に前記活性層(11)が存在せず、前記コア領域(10)が導電性コンタクト層(6)に直接接触している、
請求項1から請求項12のいずれかに記載のオプトエレクトロニクス半導体チップ。 - 前記コンタクト層(6)が、前記活性領域(1)の少なくとも大部分、特にすべての前記活性領域(1)の前記コア領域(10)に直接接触しており、前記コンタクト層(6)が、部分的に、前記多数の活性領域(1)の側の前記キャリア(2)の前記外面(2a)に平行に、または実質的に平行に延びる平面内に、延在している、
請求項13に記載のオプトエレクトロニクス半導体チップ。 - 前記多数の活性領域(1)の間に機能材料が配置されており、前記機能材料が、少なくとも、前記主延在方向(R)を横切る方向(x,y)に、前記活性領域(1)を囲んでおり、前記機能材料が、少なくとも1種類のルミネセンス変換物質もしくは少なくとも1種類のESD保護材料またはその両方を含んでいる、
請求項1から請求項14のいずれかに記載のオプトエレクトロニクス半導体チップ。 - 前記活性領域(1)が、前記キャリア(2)とは反対側の自身の上面(1b)に、材料除去の痕跡を有する、
請求項1から請求項15のいずれかに記載のオプトエレクトロニクス半導体チップ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102012101718A DE102012101718A1 (de) | 2012-03-01 | 2012-03-01 | Optoelektronischer Halbleiterchip |
DE102012101718.2 | 2012-03-01 | ||
PCT/EP2013/053371 WO2013127672A1 (de) | 2012-03-01 | 2013-02-20 | Optoelektronischer halbleiterchip |
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JP2015508941A true JP2015508941A (ja) | 2015-03-23 |
JP5952922B2 JP5952922B2 (ja) | 2016-07-13 |
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JP2014559148A Active JP5952922B2 (ja) | 2012-03-01 | 2013-02-20 | オプトエレクトロニクス半導体チップ |
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Country | Link |
---|---|
US (1) | US9214600B2 (ja) |
EP (1) | EP2820684A1 (ja) |
JP (1) | JP5952922B2 (ja) |
KR (1) | KR20150044422A (ja) |
CN (1) | CN104145346B (ja) |
DE (1) | DE102012101718A1 (ja) |
WO (1) | WO2013127672A1 (ja) |
Cited By (4)
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WO2018062252A1 (ja) | 2016-09-29 | 2018-04-05 | 日亜化学工業株式会社 | 発光素子 |
JP2021061272A (ja) * | 2019-10-03 | 2021-04-15 | 株式会社小糸製作所 | 半導体発光素子および半導体発光素子の製造方法 |
US11462659B2 (en) | 2019-09-10 | 2022-10-04 | Koito Manufacturing Co., Ltd. | Semiconductor light emitting device and manufacturing method of semiconductor light emitting device |
WO2024085214A1 (ja) * | 2022-10-19 | 2024-04-25 | 京セラ株式会社 | 半導体基板、半導体基板の製造方法および製造装置、半導体デバイスの製造方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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DE102016114992A1 (de) * | 2016-08-12 | 2018-02-15 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
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DE102017113745A1 (de) * | 2017-06-21 | 2018-12-27 | Osram Opto Semiconductors Gmbh | Halbleiterdisplay, optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung solcher |
DE102017113741A1 (de) | 2017-06-21 | 2018-12-27 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement |
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WO2020011117A1 (zh) * | 2018-07-12 | 2020-01-16 | 江西兆驰半导体有限公司 | 一种提高光提取效率的紫外发光二极管芯片及其制作方法 |
JP7227463B2 (ja) * | 2018-12-27 | 2023-02-22 | 日亜化学工業株式会社 | 発光素子及びその製造方法 |
CN110487685B (zh) * | 2019-08-29 | 2021-10-08 | 哈尔滨工业大学 | 一种沥青混合料骨架填充体系的评价方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10173226A (ja) * | 1996-12-06 | 1998-06-26 | Rohm Co Ltd | 半導体発光素子 |
JPH10321910A (ja) * | 1997-05-16 | 1998-12-04 | Ricoh Co Ltd | 半導体発光素子 |
JP2002016312A (ja) * | 2000-06-27 | 2002-01-18 | Sanyo Electric Co Ltd | 窒化物系半導体素子およびその製造方法 |
JP2006332650A (ja) * | 2005-05-24 | 2006-12-07 | Lg Electronics Inc | ロッド型発光素子及びその製造方法 |
JP2008282966A (ja) * | 2007-05-10 | 2008-11-20 | Sony Corp | 半導体素子およびその製造方法 |
JP2009542560A (ja) * | 2006-03-10 | 2009-12-03 | エステイーシー.ユーエヌエム | III族窒化物半導体基板材料及びデバイスにおけるGaNナノワイヤーのパルス状成長及び応用 |
WO2011067872A1 (ja) * | 2009-12-01 | 2011-06-09 | 国立大学法人北海道大学 | 発光素子およびその製造方法 |
US20110240959A1 (en) * | 2008-12-19 | 2011-10-06 | Glo Ab | Nanostructured device |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100644166B1 (ko) * | 2004-02-12 | 2006-11-10 | 학교법인 포항공과대학교 | 질화물 반도체의 이종접합 구조체, 이를 포함하는나노소자 또는 이의 어레이 |
US8330173B2 (en) * | 2005-06-25 | 2012-12-11 | Seoul Opto Device Co., Ltd. | Nanostructure having a nitride-based quantum well and light emitting diode employing the same |
DE102005035722B9 (de) | 2005-07-29 | 2021-11-18 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung |
CN101443887B (zh) * | 2006-03-10 | 2011-04-20 | Stc.Unm公司 | Gan纳米线的脉冲式生长及在族ⅲ氮化物半导体衬底材料中的应用和器件 |
CN102255018B (zh) * | 2006-12-22 | 2013-06-19 | 昆南诺股份有限公司 | 带有直立式纳米线结构的led及其制作方法 |
WO2009009612A2 (en) | 2007-07-09 | 2009-01-15 | Nanocrystal, Llc | Growth of self-assembled gan nanowires and application in nitride semiconductor bulk material |
WO2009110187A1 (ja) * | 2008-03-05 | 2009-09-11 | パナソニック株式会社 | 発光素子 |
WO2010022064A1 (en) * | 2008-08-21 | 2010-02-25 | Nanocrystal Corporation | Defect-free group iii - nitride nanostructures and devices using pulsed and non-pulsed growth techniques |
KR20100073757A (ko) * | 2008-12-23 | 2010-07-01 | 삼성전자주식회사 | 마이크로 로드를 이용한 발광소자 및 그 제조방법 |
KR101061150B1 (ko) * | 2009-05-22 | 2011-08-31 | 서울대학교산학협력단 | 발광 디바이스와 이의 제조 방법 |
KR101611412B1 (ko) * | 2009-10-28 | 2016-04-11 | 삼성전자주식회사 | 발광 소자 |
DE102009056712B4 (de) | 2009-12-04 | 2014-09-11 | Technische Universität Braunschweig | Verfahren zur Herstellung elektrischer Anschlusselemente auf Nanosäulen |
US8907321B2 (en) * | 2009-12-16 | 2014-12-09 | Lehigh Univeristy | Nitride based quantum well light-emitting devices having improved current injection efficiency |
DE102009060750A1 (de) * | 2009-12-30 | 2011-07-07 | OSRAM Opto Semiconductors GmbH, 93055 | Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung |
DE102010012711A1 (de) * | 2010-03-25 | 2011-09-29 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterbauelements |
SG186261A1 (en) * | 2010-06-18 | 2013-01-30 | Glo Ab | Nanowire led structure and method for manufacturing the same |
US8242523B2 (en) * | 2010-07-29 | 2012-08-14 | National Tsing Hua University | III-Nitride light-emitting diode and method of producing the same |
US8669128B2 (en) * | 2010-07-29 | 2014-03-11 | National Tsing Hua University | Method of producing III-nitride light-emitting diode |
WO2014066371A1 (en) * | 2012-10-26 | 2014-05-01 | Glo Ab | Nanowire sized opto-electronic structure and method for modifying selected portions of same |
-
2012
- 2012-03-01 DE DE102012101718A patent/DE102012101718A1/de active Pending
-
2013
- 2013-02-20 KR KR20147027327A patent/KR20150044422A/ko active IP Right Grant
- 2013-02-20 EP EP13708711.0A patent/EP2820684A1/de not_active Withdrawn
- 2013-02-20 JP JP2014559148A patent/JP5952922B2/ja active Active
- 2013-02-20 WO PCT/EP2013/053371 patent/WO2013127672A1/de active Application Filing
- 2013-02-20 US US14/382,286 patent/US9214600B2/en active Active
- 2013-02-20 CN CN201380012011.5A patent/CN104145346B/zh active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10173226A (ja) * | 1996-12-06 | 1998-06-26 | Rohm Co Ltd | 半導体発光素子 |
JPH10321910A (ja) * | 1997-05-16 | 1998-12-04 | Ricoh Co Ltd | 半導体発光素子 |
JP2002016312A (ja) * | 2000-06-27 | 2002-01-18 | Sanyo Electric Co Ltd | 窒化物系半導体素子およびその製造方法 |
JP2006332650A (ja) * | 2005-05-24 | 2006-12-07 | Lg Electronics Inc | ロッド型発光素子及びその製造方法 |
JP2009542560A (ja) * | 2006-03-10 | 2009-12-03 | エステイーシー.ユーエヌエム | III族窒化物半導体基板材料及びデバイスにおけるGaNナノワイヤーのパルス状成長及び応用 |
JP2008282966A (ja) * | 2007-05-10 | 2008-11-20 | Sony Corp | 半導体素子およびその製造方法 |
US20110240959A1 (en) * | 2008-12-19 | 2011-10-06 | Glo Ab | Nanostructured device |
WO2011067872A1 (ja) * | 2009-12-01 | 2011-06-09 | 国立大学法人北海道大学 | 発光素子およびその製造方法 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018062252A1 (ja) | 2016-09-29 | 2018-04-05 | 日亜化学工業株式会社 | 発光素子 |
KR20190035926A (ko) | 2016-09-29 | 2019-04-03 | 니치아 카가쿠 고교 가부시키가이샤 | 발광소자 |
US10879422B2 (en) | 2016-09-29 | 2020-12-29 | Nichia Corporation | Light emitting element |
US11482642B2 (en) | 2016-09-29 | 2022-10-25 | Nichia Corporation | Light emitting element |
US11462659B2 (en) | 2019-09-10 | 2022-10-04 | Koito Manufacturing Co., Ltd. | Semiconductor light emitting device and manufacturing method of semiconductor light emitting device |
JP2021061272A (ja) * | 2019-10-03 | 2021-04-15 | 株式会社小糸製作所 | 半導体発光素子および半導体発光素子の製造方法 |
JP7336767B2 (ja) | 2019-10-03 | 2023-09-01 | 株式会社小糸製作所 | 半導体発光素子および半導体発光素子の製造方法 |
WO2024085214A1 (ja) * | 2022-10-19 | 2024-04-25 | 京セラ株式会社 | 半導体基板、半導体基板の製造方法および製造装置、半導体デバイスの製造方法 |
WO2024084634A1 (ja) * | 2022-10-19 | 2024-04-25 | 京セラ株式会社 | 半導体基板、半導体基板の製造方法および製造装置 |
Also Published As
Publication number | Publication date |
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EP2820684A1 (de) | 2015-01-07 |
CN104145346B (zh) | 2017-05-10 |
JP5952922B2 (ja) | 2016-07-13 |
US9214600B2 (en) | 2015-12-15 |
KR20150044422A (ko) | 2015-04-24 |
DE102012101718A1 (de) | 2013-09-05 |
WO2013127672A1 (de) | 2013-09-06 |
US20150021636A1 (en) | 2015-01-22 |
CN104145346A (zh) | 2014-11-12 |
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