JP2015211053A - 半導体積層体および受光素子 - Google Patents
半導体積層体および受光素子 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 133
- 239000000758 substrate Substances 0.000 claims abstract description 124
- 239000012535 impurity Substances 0.000 claims abstract description 84
- 239000000969 carrier Substances 0.000 claims abstract description 49
- 150000001875 compounds Chemical class 0.000 claims abstract description 41
- 230000004913 activation Effects 0.000 claims abstract description 34
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 18
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 8
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 8
- 238000000927 vapour-phase epitaxy Methods 0.000 claims description 7
- 229910005540 GaP Inorganic materials 0.000 claims description 5
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 5
- 229910017115 AlSb Inorganic materials 0.000 claims description 4
- 229910005542 GaSb Inorganic materials 0.000 claims description 4
- 230000035945 sensitivity Effects 0.000 abstract description 51
- 230000009467 reduction Effects 0.000 abstract description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 19
- 238000004519 manufacturing process Methods 0.000 description 17
- 239000007789 gas Substances 0.000 description 16
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 15
- 238000002161 passivation Methods 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000011156 evaluation Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 239000011701 zinc Substances 0.000 description 6
- 229910002601 GaN Inorganic materials 0.000 description 5
- 229910052787 antimony Inorganic materials 0.000 description 5
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 238000002484 cyclic voltammetry Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 5
- HTDIUWINAKAPER-UHFFFAOYSA-N trimethylarsine Chemical compound C[As](C)C HTDIUWINAKAPER-UHFFFAOYSA-N 0.000 description 5
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 4
- OTRPZROOJRIMKW-UHFFFAOYSA-N triethylindigane Chemical compound CC[In](CC)CC OTRPZROOJRIMKW-UHFFFAOYSA-N 0.000 description 4
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 238000001036 glow-discharge mass spectrometry Methods 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 2
- -1 aluminum antimony Chemical compound 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 2
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- SAOPTAQUONRHEV-UHFFFAOYSA-N gold zinc Chemical compound [Zn].[Au] SAOPTAQUONRHEV-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- VCZQFJFZMMALHB-UHFFFAOYSA-N tetraethylsilane Chemical compound CC[Si](CC)(CC)CC VCZQFJFZMMALHB-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- MBGCACIOPCILDG-UHFFFAOYSA-N [Ni].[Ge].[Au] Chemical compound [Ni].[Ge].[Au] MBGCACIOPCILDG-UHFFFAOYSA-N 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 238000001574 biopsy Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- QTQRGDBFHFYIBH-UHFFFAOYSA-N tert-butylarsenic Chemical compound CC(C)(C)[As] QTQRGDBFHFYIBH-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- VLCQZHSMCYCDJL-UHFFFAOYSA-N tribenuron methyl Chemical compound COC(=O)C1=CC=CC=C1S(=O)(=O)NC(=O)N(C)C1=NC(C)=NC(OC)=N1 VLCQZHSMCYCDJL-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
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Abstract
【解決手段】半導体積層体1は、III−V族化合物半導体からなる基板20と、基板20上に配置され、III−V族化合物半導体からなる半導体層30,40,50と、を備える。基板20の、多数キャリアを生成する不純物の濃度は1×1017cm−3以上2×1020cm−3以下であり、当該不純物の活性化率は30%以上である。
【選択図】図1
Description
最初に本願発明の実施態様を列記して説明する。本願の半導体積層体は、III−V族化合物半導体からなる基板と、当該基板上に配置され、III−V族化合物半導体からなる半導体層と、を備えている。そして、上記基板の、多数キャリアを生成する不純物(多数キャリアを生成させるために添加される不純物)の濃度は1×1017cm−3以上2×1020cm−3以下であり、当該不純物の活性化率は30%以上である。
次に、本発明にかかる半導体積層体の一実施の形態を、以下に図面を参照しつつ説明する。なお、以下の図面において同一または相当する部分には同一の参照番号を付しその説明は繰返さない。
2 実験用赤外線受光素子
10 半導体積層体
20 基板
20A 主面
20B 主面
30 バッファ層
30A 主面
40 量子井戸層
40A 主面
41 第1要素層
42 第2要素層
50 コンタクト層
50A 主面
51 拡散領域
80 パッシベーション膜
81 開口部
85 反射防止膜
86 開口部
91 n側電極
92 p側電極
99 トレンチ
99A 側壁
99B 底壁
Claims (8)
- III−V族化合物半導体からなる基板と、
前記基板上に配置され、III−V族化合物半導体からなる半導体層と、を備え、
前記基板の、多数キャリアを生成する不純物の濃度は1×1017cm−3以上2×1020cm−3以下であり、前記不純物の活性化率は30%以上である、半導体積層体。 - 前記基板の導電型はn型である、請求項1に記載の半導体積層体。
- 前記半導体層は量子井戸層を含む、請求項1または2に記載の半導体積層体。
- 前記量子井戸層の厚みは1μm以上である、請求項3に記載の半導体積層体。
- 前記量子井戸層はInxGa1−xAs(0.38≦x≦1)層とGaAs1−ySby(0.36≦y≦1)層とが交互に積層された構造、またはGa1−uInuNvAs1−v(0.4≦u≦0.8、0<v≦0.2)層とGaAs1−ySby(0.36≦y≦0.62)層とが交互に積層された構造を有している、請求項3または4に記載の半導体積層体。
- 前記基板を構成するIII−V族化合物半導体はGaAs、GaP、GaSb、InP、InAs、InSb、AlSbまたはAlAsである、請求項1〜5のいずれか1項に記載の半導体積層体。
- 前記半導体層は有機金属気相成長法により形成されている、請求項1〜6のいずれか1項に記載の半導体積層体。
- 請求項1〜7のいずれか1項に記載の半導体積層体と、
前記半導体積層体の前記基板の、前記半導体層とは反対側の主面上に形成された電極と、を備えた、受光素子。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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JP2014089743A JP6454981B2 (ja) | 2014-04-24 | 2014-04-24 | 半導体積層体および受光素子 |
PCT/JP2014/083378 WO2015162823A1 (ja) | 2014-04-24 | 2014-12-17 | 半導体積層体および受光素子 |
US15/304,805 US20170040477A1 (en) | 2014-04-24 | 2014-12-17 | Semiconductor layered structure and photodiode |
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JP2014089743A JP6454981B2 (ja) | 2014-04-24 | 2014-04-24 | 半導体積層体および受光素子 |
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JP2015211053A true JP2015211053A (ja) | 2015-11-24 |
JP6454981B2 JP6454981B2 (ja) | 2019-01-23 |
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US (1) | US20170040477A1 (ja) |
JP (1) | JP6454981B2 (ja) |
WO (1) | WO2015162823A1 (ja) |
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FR3041815B1 (fr) * | 2015-09-25 | 2020-02-21 | Thales | Photodetecteur comprenant un empilement de couches superposees |
CN114122166A (zh) * | 2021-11-30 | 2022-03-01 | 淮阴师范学院 | 一种n型GaAs欧姆接触电极材料及其制备方法 |
CN114709279A (zh) * | 2022-06-07 | 2022-07-05 | 至芯半导体(杭州)有限公司 | 一种倒装结构的紫外探测器芯片 |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01296618A (ja) * | 1988-05-25 | 1989-11-30 | Nec Corp | 3−v族半導体基板の熱処理方法 |
JPH0677598A (ja) * | 1992-08-25 | 1994-03-18 | Mitsubishi Electric Corp | 半導体レーザ及びその製造方法 |
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- 2014-04-24 JP JP2014089743A patent/JP6454981B2/ja not_active Ceased
- 2014-12-17 US US15/304,805 patent/US20170040477A1/en not_active Abandoned
- 2014-12-17 WO PCT/JP2014/083378 patent/WO2015162823A1/ja active Application Filing
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WO2015162823A1 (ja) | 2015-10-29 |
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