JP2015146279A - プラズマ処理装置及び方法 - Google Patents
プラズマ処理装置及び方法 Download PDFInfo
- Publication number
- JP2015146279A JP2015146279A JP2014019051A JP2014019051A JP2015146279A JP 2015146279 A JP2015146279 A JP 2015146279A JP 2014019051 A JP2014019051 A JP 2014019051A JP 2014019051 A JP2014019051 A JP 2014019051A JP 2015146279 A JP2015146279 A JP 2015146279A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- plasma
- plasma processing
- processing apparatus
- coil
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/30—Plasma torches using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Recrystallisation Techniques (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
Description
以下、本発明の実施の形態1について、図1〜図2を参照して説明する。
以下、本発明の実施の形態2について、図3を参照して説明する。
以下、本発明の実施の形態3について、図4を参照して説明する。
以下、本発明の実施の形態4について、図5を参照して説明する。
以下、本発明の実施の形態5について、図6を参照して説明する。
以下、本発明の実施の形態6について、図7を参照して説明する。
以下、本発明の実施の形態7について、図8を参照して説明する。
以下、本発明の実施の形態8について、図9を参照して説明する。
以下、本発明の実施の形態9について、図10を参照して説明する。
1 基材
2 薄膜
3 コイル
4 第一セラミックスブロック
5 第二セラミックスブロック
7 長尺チャンバ
8 開口部
9 プラズマガスマニホールド
10 プラズマガス供給配管
11 プラズマガス供給穴
13 シールド板
Claims (8)
- 誘電体部材に囲まれたチャンバと、
前記チャンバに連通する開口部と、
前記チャンバの内部にガスを導入するガス供給配管と、
前記チャンバの近傍に設けられたコイルと、を備えた誘導結合型プラズマトーチと、
前記コイルに接続された高周波電源と、
前記開口部と対向して基材を保持する基材載置台と、を有するプラズマ処理装置であって、
前記コイルと前記基材載置台との間の、前記開口部を除く部分に導体部材が設けられていること、
を特徴とするプラズマ処理装置。 - 前記チャンバが、スリット状の開口部と連通している環状で長尺のチャンバであり、
前記チャンバの長手方向と前記開口部の長手方向とは平行に配置され、
前記開口部の長手方向に対して垂直な向きに、前記チャンバと前記基材とを相対的に移動可能とする移動機構を備えた、
請求項1記載のプラズマ処理装置。 - 前記チャンバが、基材載置台がなす平面に対して垂直に配置されている、
請求項1記載のプラズマ処理装置。 - 前記チャンバと前記導体部材は一体である、
請求項1記載のプラズマ処理装置。 - 前記導体部材が、シリコン、シリコンカーバイド、カーボンのいずれかである、
請求項1記載のプラズマ処理装置。 - 前記導体部材が、前記チャンバの長手方向に平行な複数の線状の部材からなる、
請求項1記載のプラズマ処理装置。 - 前記導体部材が、網状の部材からなる、
請求項1記載のプラズマ処理装置。 - 誘電体で囲まれたチャンバ内にガスを供給しつつ、前記チャンバに連通する開口部から基材に向けてガスを噴出すると共に、
チャンバの近傍にコイルが配置された状態で、コイルに高周波電力を供給することで、前記チャンバ内に高周波電磁界を発生させてプラズマを発生させ、前記基材の表面を処理する、誘導結合型プラズマトーチを用いるプラズマ処理方法であって、
前記コイルと前記基材載置台との間の、前記開口部を除く部分に導体部材が設けられている状態で基材を処理すること、
を特徴とするプラズマ処理方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014019051A JP6127276B2 (ja) | 2014-02-04 | 2014-02-04 | プラズマ処理装置及び方法 |
TW104101806A TWI523972B (zh) | 2014-02-04 | 2015-01-20 | Plasma processing apparatus and method |
US14/606,925 US20150221475A1 (en) | 2014-02-04 | 2015-01-27 | Plasma processing device and plasma processing method |
KR1020150016123A KR20150092008A (ko) | 2014-02-04 | 2015-02-02 | 플라스마 처리 장치 및 방법 |
KR1020160132090A KR101785866B1 (ko) | 2014-02-04 | 2016-10-12 | 플라스마 처리 장치 및 방법 |
KR1020160132095A KR101766596B1 (ko) | 2014-02-04 | 2016-10-12 | 플라스마 처리 장치 및 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014019051A JP6127276B2 (ja) | 2014-02-04 | 2014-02-04 | プラズマ処理装置及び方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015146279A true JP2015146279A (ja) | 2015-08-13 |
JP6127276B2 JP6127276B2 (ja) | 2017-05-17 |
Family
ID=53755426
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014019051A Expired - Fee Related JP6127276B2 (ja) | 2014-02-04 | 2014-02-04 | プラズマ処理装置及び方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20150221475A1 (ja) |
JP (1) | JP6127276B2 (ja) |
KR (3) | KR20150092008A (ja) |
TW (1) | TWI523972B (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5617817B2 (ja) * | 2011-10-27 | 2014-11-05 | パナソニック株式会社 | 誘導結合型プラズマ処理装置及び誘導結合型プラズマ処理方法 |
JP6295439B2 (ja) * | 2015-06-02 | 2018-03-20 | パナソニックIpマネジメント株式会社 | プラズマ処理装置及び方法、電子デバイスの製造方法 |
JP6732006B2 (ja) * | 2015-07-31 | 2020-07-29 | アジレント・テクノロジーズ・インクAgilent Technologies, Inc. | マイクロ波プラズマ生成用チャンバ及びプラズマ生成方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10102260A (ja) * | 1996-09-30 | 1998-04-21 | Anelva Corp | プラズマ処理装置 |
JP2005108482A (ja) * | 2003-09-29 | 2005-04-21 | E Square:Kk | プラズマ表面処理装置 |
JP2006244835A (ja) * | 2005-03-02 | 2006-09-14 | Matsushita Electric Works Ltd | プラズマ処理装置及びプラズマ処理方法 |
JP2006319192A (ja) * | 2005-05-13 | 2006-11-24 | Sharp Corp | 電極および該電極を用いたプラズマプロセス装置 |
JP2007128710A (ja) * | 2005-11-02 | 2007-05-24 | Sekisui Chem Co Ltd | プラズマ処理装置 |
JP2012174500A (ja) * | 2011-02-22 | 2012-09-10 | Panasonic Corp | プラズマ処理装置及び方法 |
JP2012174499A (ja) * | 2011-02-22 | 2012-09-10 | Panasonic Corp | プラズマ処理装置及び方法 |
JP2013098067A (ja) * | 2011-11-02 | 2013-05-20 | Panasonic Corp | プラズマ処理装置及び方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5021877B2 (ja) | 2001-09-27 | 2012-09-12 | 積水化学工業株式会社 | 放電プラズマ処理装置 |
US6586886B1 (en) * | 2001-12-19 | 2003-07-01 | Applied Materials, Inc. | Gas distribution plate electrode for a plasma reactor |
DE102004015216B4 (de) * | 2004-03-23 | 2006-07-13 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Modul und Verfahren für die Modifizierung von Substratoberflächen bei Atmosphärenbedingungen |
CA2777088A1 (en) * | 2009-07-15 | 2011-01-15 | Haisam Yakoub | Frictional non rocking seismic base isolator for structure seismic protection (fnsi) |
JP2011071010A (ja) | 2009-09-28 | 2011-04-07 | Panasonic Corp | 熱プラズマ処理装置 |
JP5321552B2 (ja) * | 2010-08-05 | 2013-10-23 | パナソニック株式会社 | プラズマ処理装置及び方法 |
JP5429268B2 (ja) | 2011-12-07 | 2014-02-26 | パナソニック株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP5467371B2 (ja) | 2011-12-07 | 2014-04-09 | パナソニック株式会社 | 誘導結合型プラズマ処理装置及び誘導結合型プラズマ処理方法 |
JP5510436B2 (ja) | 2011-12-06 | 2014-06-04 | パナソニック株式会社 | プラズマ処理装置及びプラズマ処理方法 |
-
2014
- 2014-02-04 JP JP2014019051A patent/JP6127276B2/ja not_active Expired - Fee Related
-
2015
- 2015-01-20 TW TW104101806A patent/TWI523972B/zh not_active IP Right Cessation
- 2015-01-27 US US14/606,925 patent/US20150221475A1/en not_active Abandoned
- 2015-02-02 KR KR1020150016123A patent/KR20150092008A/ko active Application Filing
-
2016
- 2016-10-12 KR KR1020160132090A patent/KR101785866B1/ko active IP Right Grant
- 2016-10-12 KR KR1020160132095A patent/KR101766596B1/ko active IP Right Grant
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10102260A (ja) * | 1996-09-30 | 1998-04-21 | Anelva Corp | プラズマ処理装置 |
JP2005108482A (ja) * | 2003-09-29 | 2005-04-21 | E Square:Kk | プラズマ表面処理装置 |
JP2006244835A (ja) * | 2005-03-02 | 2006-09-14 | Matsushita Electric Works Ltd | プラズマ処理装置及びプラズマ処理方法 |
JP2006319192A (ja) * | 2005-05-13 | 2006-11-24 | Sharp Corp | 電極および該電極を用いたプラズマプロセス装置 |
JP2007128710A (ja) * | 2005-11-02 | 2007-05-24 | Sekisui Chem Co Ltd | プラズマ処理装置 |
JP2012174500A (ja) * | 2011-02-22 | 2012-09-10 | Panasonic Corp | プラズマ処理装置及び方法 |
JP2012174499A (ja) * | 2011-02-22 | 2012-09-10 | Panasonic Corp | プラズマ処理装置及び方法 |
JP2013098067A (ja) * | 2011-11-02 | 2013-05-20 | Panasonic Corp | プラズマ処理装置及び方法 |
Non-Patent Citations (1)
Title |
---|
TOMOHIRO OKUMURA AND HIROSHI KAWAMURA: "Elongated Inductively Coupled Thermal Plasma Torch Operable at Atmospheric Pressure", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 52, Number 5S2, 05EE01, JPN6015012127, 20 May 2013 (2013-05-20), JP, ISSN: 0003215836 * |
Also Published As
Publication number | Publication date |
---|---|
JP6127276B2 (ja) | 2017-05-17 |
KR20150092008A (ko) | 2015-08-12 |
KR101785866B1 (ko) | 2017-10-16 |
TW201542867A (zh) | 2015-11-16 |
KR20160122681A (ko) | 2016-10-24 |
KR20160121501A (ko) | 2016-10-19 |
KR101766596B1 (ko) | 2017-08-08 |
TWI523972B (zh) | 2016-03-01 |
US20150221475A1 (en) | 2015-08-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2016225191A (ja) | プラズマ処理装置及び方法、電子デバイスの製造方法 | |
JP6191887B2 (ja) | プラズマ処理装置 | |
JP6037292B2 (ja) | プラズマ処理装置及びプラズマ処理方法 | |
JP6064174B2 (ja) | プラズマ処理装置及びプラズマ処理方法 | |
JP6473889B2 (ja) | プラズマ処理装置及び方法、電子デバイスの製造方法 | |
KR101785866B1 (ko) | 플라스마 처리 장치 및 방법 | |
JP6043968B2 (ja) | プラズマ処理方法並びに電子デバイスの製造方法 | |
JP2013093264A (ja) | プラズマ処理装置及び方法 | |
JP6379355B2 (ja) | プラズマ処理装置及び方法、電子デバイスの製造方法 | |
JP2014060035A (ja) | プラズマ処理方法及びプラズマ処理装置 | |
JP5899422B2 (ja) | 誘導結合型プラズマ処理装置及び方法 | |
JP6064176B2 (ja) | 誘導結合型プラズマ処理装置及び方法 | |
JP5857207B2 (ja) | プラズマ処理装置及び方法 | |
JP2016119313A (ja) | プラズマ処理装置 | |
JP5906391B2 (ja) | プラズマ処理装置及び方法 | |
JP2016062716A (ja) | プラズマ処理装置及び方法、電子デバイスの製造方法 | |
JP2015088260A (ja) | プラズマ処理装置及び方法 | |
JP2015018653A (ja) | プラズマ処理装置及び方法 | |
JP2017182966A (ja) | プラズマ処理装置及びプラズマ処理方法、電子デバイスの製造方法 | |
JP2015099642A (ja) | プラズマ処理装置及び方法 | |
JP2016225190A (ja) | プラズマ処理装置及び方法、電子デバイスの製造方法 | |
JP2013037978A (ja) | プラズマ処理装置及びプラズマ処理方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20151202 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20151215 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160210 |
|
RD01 | Notification of change of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7421 Effective date: 20160519 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160705 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160727 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20161206 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20161227 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170228 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170313 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 6127276 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
LAPS | Cancellation because of no payment of annual fees |