JP2015057850A5 - - Google Patents

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Publication number
JP2015057850A5
JP2015057850A5 JP2014233404A JP2014233404A JP2015057850A5 JP 2015057850 A5 JP2015057850 A5 JP 2015057850A5 JP 2014233404 A JP2014233404 A JP 2014233404A JP 2014233404 A JP2014233404 A JP 2014233404A JP 2015057850 A5 JP2015057850 A5 JP 2015057850A5
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JP
Japan
Prior art keywords
well
well region
insulating film
region
contact hole
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Application number
JP2014233404A
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English (en)
Japanese (ja)
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JP2015057850A (ja
JP6008145B2 (ja
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Priority to JP2014233404A priority Critical patent/JP6008145B2/ja
Priority claimed from JP2014233404A external-priority patent/JP6008145B2/ja
Publication of JP2015057850A publication Critical patent/JP2015057850A/ja
Publication of JP2015057850A5 publication Critical patent/JP2015057850A5/ja
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Publication of JP6008145B2 publication Critical patent/JP6008145B2/ja
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JP2014233404A 2010-06-30 2014-11-18 電力用半導体装置 Active JP6008145B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014233404A JP6008145B2 (ja) 2010-06-30 2014-11-18 電力用半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010149090 2010-06-30
JP2010149090 2010-06-30
JP2014233404A JP6008145B2 (ja) 2010-06-30 2014-11-18 電力用半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2012522420A Division JP5692227B2 (ja) 2010-06-30 2011-02-08 電力用半導体装置

Publications (3)

Publication Number Publication Date
JP2015057850A JP2015057850A (ja) 2015-03-26
JP2015057850A5 true JP2015057850A5 (enrdf_load_html_response) 2015-07-23
JP6008145B2 JP6008145B2 (ja) 2016-10-19

Family

ID=45401589

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2012522420A Active JP5692227B2 (ja) 2010-06-30 2011-02-08 電力用半導体装置
JP2014233404A Active JP6008145B2 (ja) 2010-06-30 2014-11-18 電力用半導体装置

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2012522420A Active JP5692227B2 (ja) 2010-06-30 2011-02-08 電力用半導体装置

Country Status (2)

Country Link
JP (2) JP5692227B2 (enrdf_load_html_response)
WO (1) WO2012001837A1 (enrdf_load_html_response)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5994604B2 (ja) 2012-11-28 2016-09-21 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
DE112014001838B4 (de) 2013-04-03 2024-09-26 Mitsubishi Electric Corporation Halbleitervorrichtung mit zwei Schottky-Übergängen
US9231091B2 (en) * 2014-05-12 2016-01-05 Infineon Technologies Ag Semiconductor device and reverse conducting insulated gate bipolar transistor with isolated source zones
WO2016052261A1 (ja) * 2014-10-01 2016-04-07 三菱電機株式会社 半導体装置
JP6560444B2 (ja) * 2016-04-11 2019-08-14 三菱電機株式会社 半導体装置
DE112017004237B4 (de) * 2016-08-25 2023-12-14 Mitsubishi Electric Corporation Halbleitereinheit
EP3712952A4 (en) 2017-11-13 2021-06-23 Shindengen Electric Manufacturing Co., Ltd. WIDE-BAND SEMICONDUCTOR DEVICE
WO2019092870A1 (ja) * 2017-11-13 2019-05-16 新電元工業株式会社 ワイドギャップ半導体装置
JP6554614B1 (ja) 2017-12-14 2019-07-31 新電元工業株式会社 ワイドギャップ半導体装置
JP7113221B2 (ja) 2018-02-08 2022-08-05 パナソニックＩｐマネジメント株式会社 炭化珪素半導体装置
JP6994991B2 (ja) 2018-03-16 2022-02-04 株式会社 日立パワーデバイス 半導体装置、パワーモジュールおよび電力変換装置
US11309415B2 (en) 2018-03-29 2022-04-19 Shindengen Electric Manufacturing Co., Ltd. Wide gap semiconductor device
JP7310144B2 (ja) * 2019-01-10 2023-07-19 富士電機株式会社 炭化珪素半導体装置
JP2020036045A (ja) * 2019-11-29 2020-03-05 ローム株式会社 半導体装置
CN111564497B (zh) * 2020-04-30 2023-04-18 西安理工大学 一种具有非均匀体二极管的SiC MOSFET器件
CN112768447B (zh) * 2021-01-11 2024-11-12 杭州士兰集昕微电子有限公司 逆导型绝缘栅双极型晶体管及其制造方法
IT202100003653A1 (it) * 2021-02-17 2022-08-17 St Microelectronics Srl Dispositivo mosfet di carburo di silicio, a conduzione verticale, avente struttura di polarizzazione di porta perfezionata e relativo procedimento di fabbricazione
US20250089316A1 (en) * 2023-09-13 2025-03-13 Wolfspeed, Inc. Power Semiconductor Device with Balancing Shunt Structure

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2785271B2 (ja) * 1988-04-28 1998-08-13 富士電機株式会社 半導体装置
JP2950569B2 (ja) * 1990-03-01 1999-09-20 株式会社東芝 Ｍｏｓ型電界効果トランジスタ
JP2858404B2 (ja) * 1990-06-08 1999-02-17 株式会社デンソー 絶縁ゲート型バイポーラトランジスタおよびその製造方法
JPH05343692A (ja) * 1992-06-09 1993-12-24 Nec Corp 縦型電界効果トランジスタ
JP2870402B2 (ja) * 1994-03-10 1999-03-17 株式会社デンソー 絶縁ゲート型電界効果トランジスタ
JPH08102495A (ja) * 1994-09-30 1996-04-16 Toshiba Corp 半導体装置
JP2000294770A (ja) * 1999-04-09 2000-10-20 Rohm Co Ltd 半導体装置
JP4696356B2 (ja) * 2000-12-14 2011-06-08 株式会社デンソー 半導体装置
JP4577480B2 (ja) * 2003-06-06 2010-11-10 サンケン電気株式会社 絶縁ゲート型半導体装置
JP2005243674A (ja) * 2004-02-24 2005-09-08 Renesas Technology Corp 半導体装置
JP4286877B2 (ja) * 2007-03-13 2009-07-01 Ｏｋｉセミコンダクタ株式会社 炭化珪素半導体装置およびその製造方法
JP4683075B2 (ja) * 2008-06-10 2011-05-11 株式会社デンソー 炭化珪素半導体装置およびその製造方法

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