JP2015056544A - 炭化珪素半導体装置およびその製造方法 - Google Patents

炭化珪素半導体装置およびその製造方法 Download PDF

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Publication number
JP2015056544A
JP2015056544A JP2013189581A JP2013189581A JP2015056544A JP 2015056544 A JP2015056544 A JP 2015056544A JP 2013189581 A JP2013189581 A JP 2013189581A JP 2013189581 A JP2013189581 A JP 2013189581A JP 2015056544 A JP2015056544 A JP 2015056544A
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Japan
Prior art keywords
silicon carbide
region
main surface
semiconductor device
carbide semiconductor
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Pending
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JP2013189581A
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English (en)
Japanese (ja)
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JP2015056544A5 (enExample
Inventor
透 日吉
Toru Hiyoshi
透 日吉
増田　健良
Takeyoshi Masuda
健良 増田
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP2013189581A priority Critical patent/JP2015056544A/ja
Priority to PCT/JP2014/069515 priority patent/WO2015037335A1/ja
Priority to US14/911,678 priority patent/US20160211332A1/en
Publication of JP2015056544A publication Critical patent/JP2015056544A/ja
Publication of JP2015056544A5 publication Critical patent/JP2015056544A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/441—Vertical BJTs having an emitter-base junction ending at a main surface of the body and a base-collector junction ending at a lateral surface of the body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/231—Emitter or collector electrodes for bipolar transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/281—Base electrodes for bipolar transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10P50/242—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/257—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2013189581A 2013-09-12 2013-09-12 炭化珪素半導体装置およびその製造方法 Pending JP2015056544A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2013189581A JP2015056544A (ja) 2013-09-12 2013-09-12 炭化珪素半導体装置およびその製造方法
PCT/JP2014/069515 WO2015037335A1 (ja) 2013-09-12 2014-07-24 炭化珪素半導体装置およびその製造方法
US14/911,678 US20160211332A1 (en) 2013-09-12 2014-07-24 Silicon carbide semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013189581A JP2015056544A (ja) 2013-09-12 2013-09-12 炭化珪素半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2015056544A true JP2015056544A (ja) 2015-03-23
JP2015056544A5 JP2015056544A5 (enExample) 2016-08-12

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JP2013189581A Pending JP2015056544A (ja) 2013-09-12 2013-09-12 炭化珪素半導体装置およびその製造方法

Country Status (3)

Country Link
US (1) US20160211332A1 (enExample)
JP (1) JP2015056544A (enExample)
WO (1) WO2015037335A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10109724B2 (en) 2017-02-22 2018-10-23 Qualcomm Incorporated Heterojunction bipolar transistor unit cell and power stage for a power amplifier

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006303469A (ja) * 2005-03-25 2006-11-02 Shindengen Electric Mfg Co Ltd ＳｉＣ半導体装置
JP2006351621A (ja) * 2005-06-13 2006-12-28 Honda Motor Co Ltd バイポーラ型半導体装置およびその製造方法
JP2011233669A (ja) * 2010-04-27 2011-11-17 Sumitomo Electric Ind Ltd 半導体装置
JP2012209422A (ja) * 2011-03-30 2012-10-25 Sumitomo Electric Ind Ltd Ｉｇｂｔ
JP2013162118A (ja) * 2012-02-01 2013-08-19 Sumitomo Electric Ind Ltd 炭化珪素半導体装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006303469A (ja) * 2005-03-25 2006-11-02 Shindengen Electric Mfg Co Ltd ＳｉＣ半導体装置
JP2006351621A (ja) * 2005-06-13 2006-12-28 Honda Motor Co Ltd バイポーラ型半導体装置およびその製造方法
JP2011233669A (ja) * 2010-04-27 2011-11-17 Sumitomo Electric Ind Ltd 半導体装置
JP2012209422A (ja) * 2011-03-30 2012-10-25 Sumitomo Electric Ind Ltd Ｉｇｂｔ
JP2013162118A (ja) * 2012-02-01 2013-08-19 Sumitomo Electric Ind Ltd 炭化珪素半導体装置

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US20160211332A1 (en) 2016-07-21
WO2015037335A1 (ja) 2015-03-19

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