JP2015050465A - パワー半導体装置及びパワー半導体装置を製造するための方法 - Google Patents

パワー半導体装置及びパワー半導体装置を製造するための方法 Download PDF

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Publication number
JP2015050465A
JP2015050465A JP2014176971A JP2014176971A JP2015050465A JP 2015050465 A JP2015050465 A JP 2015050465A JP 2014176971 A JP2014176971 A JP 2014176971A JP 2014176971 A JP2014176971 A JP 2014176971A JP 2015050465 A JP2015050465 A JP 2015050465A
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Japan
Prior art keywords
cooling
housing member
power semiconductor
cooling housing
semiconductor device
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JP2014176971A
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English (en)
Japanese (ja)
Inventor
ボーゲン インゴ
Bogen Ingo
ボーゲン インゴ
ベック マルクス
Markus Beck
ベック マルクス
クーラス ハルトムート
Kuras Hartmut
クーラス ハルトムート
ポペスク アレクサンダー
Popescu Alexander
ポペスク アレクサンダー
ヘルデルファー ラインハルト
Helldoerfer Reinhard
ヘルデルファー ラインハルト
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Semikron GmbH and Co KG
Semikron Elektronik GmbH and Co KG
Original Assignee
Semikron GmbH and Co KG
Semikron Elektronik GmbH and Co KG
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Application filed by Semikron GmbH and Co KG, Semikron Elektronik GmbH and Co KG filed Critical Semikron GmbH and Co KG
Publication of JP2015050465A publication Critical patent/JP2015050465A/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating
    • H05K7/2089—Modifications to facilitate cooling, ventilating, or heating for power electronics, e.g. for inverters for controlling motor
    • H05K7/20927—Liquid coolant without phase change
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814—Conductive parts
    • H01L21/4871—Bases, plates or heatsinks
    • H01L21/4882—Assembly of heatsink parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3672—Foil-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/83237—Applying energy for connecting using an electron beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/83238—Applying energy for connecting using electric resistance welding, i.e. ohmic heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/201—Temperature ranges
    • H01L2924/20103—Temperature range 60 C=<T<100 C, 333.15 K =< T< 373.15K
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/201—Temperature ranges
    • H01L2924/20104—Temperature range 100 C=<T<150 C, 373.15 K =< T < 423.15K

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Thermal Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)
JP2014176971A 2013-09-03 2014-09-01 パワー半導体装置及びパワー半導体装置を製造するための方法 Withdrawn JP2015050465A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102013109589.5 2013-09-03
DE201310109589 DE102013109589B3 (de) 2013-09-03 2013-09-03 Leistungshalbleitereinrichtung und Verfahren zur Herstellung einer Leistungshalbleitereinrichtung

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JP2015050465A true JP2015050465A (ja) 2015-03-16

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Country Status (7)

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US (1) US9111900B2 (enExample)
EP (1) EP2844051A3 (enExample)
JP (1) JP2015050465A (enExample)
KR (1) KR20150026862A (enExample)
CN (1) CN104425406B (enExample)
DE (1) DE102013109589B3 (enExample)
IN (1) IN2014MU02658A (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2016203885A1 (ja) * 2015-06-17 2017-09-21 富士電機株式会社 パワー半導体モジュール及び冷却器
JP2017212401A (ja) * 2016-05-27 2017-11-30 日産自動車株式会社 電力変換装置の製造方法と冷却構造
JP2019110208A (ja) * 2017-12-18 2019-07-04 トヨタ自動車株式会社 リアクトルユニット
JP2022524749A (ja) * 2019-03-04 2022-05-10 ヒタチ・エナジー・スウィツァーランド・アクチェンゲゼルシャフト スタンピングされたプレートの使用によるパワーコンバータの直接冷却
JP2022524961A (ja) * 2019-02-28 2022-05-11 ヒタチ・エナジー・スウィツァーランド・アクチェンゲゼルシャフト 冷却器フレームの一体化が向上した電力変換装置
JP2023086175A (ja) * 2021-12-10 2023-06-22 株式会社レゾナック 冷却装置
JP2023086174A (ja) * 2021-12-10 2023-06-22 株式会社レゾナック 冷却装置

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DE102015211160A1 (de) * 2015-06-17 2016-12-22 Zf Friedrichshafen Ag Anordnung zum Kühlen eines Leistungsmoduls
DE102015211163A1 (de) * 2015-06-17 2016-12-22 Zf Friedrichshafen Ag Anordnung zum Kühlen eines Leistungsmoduls
EP3116292B1 (de) 2015-07-06 2021-03-17 EDAG Engineering AG Elektronikmodul mit generativ erzeugtem kühlkörper
DE102015114188B4 (de) * 2015-08-26 2019-03-07 Semikron Elektronik Gmbh & Co. Kg Leistungselektronisches Submodul mit einem zweiteiligen Gehäuse
DE102015223413A1 (de) * 2015-11-26 2017-06-01 Zf Friedrichshafen Ag Kupfer-Alu-Kühlkörper
US9824953B1 (en) 2016-05-16 2017-11-21 Caterpillar Inc. Mounting and environmental protection device for an IGBT module
KR101956983B1 (ko) 2016-09-20 2019-03-11 현대자동차일본기술연구소 파워 모듈 및 그 제조 방법
DE102017101269B4 (de) 2017-01-24 2019-03-07 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitereinrichtung mit einem Leistungshalbleitermodul und einem Kühlkörper
DE102017001351A1 (de) * 2017-02-11 2018-08-16 Leopold Kostal Gmbh & Co. Kg Elektrisches Gerät und Verfahren zur Herstellung eines elektrischen Geräts
WO2018146816A1 (ja) * 2017-02-13 2018-08-16 新電元工業株式会社 電子機器
DE102019200142A1 (de) * 2019-01-08 2020-07-09 Volkswagen Aktiengesellschaft Kühleinheit zur Abfuhr von Abwärme von zumindest einem Leistungsbauteil
DE102019202903A1 (de) * 2019-03-04 2020-09-10 Abb Schweiz Ag Elektronischer Konverter ausgebildet basierend auf Schweißtechnologien
DE102019206523A1 (de) * 2019-05-07 2020-11-12 Zf Friedrichshafen Ag Leistungsmodul mit gehäusten Leistungshalbleitern zur steuerbaren elektrischen Leistungsversorgung eines Verbrauchers
CN110173957B (zh) * 2019-06-19 2023-09-08 广东文轩热能科技股份有限公司 一种新型液冷板
US11562911B2 (en) 2019-07-25 2023-01-24 Hitachi Energy Switzerland Ag Power semiconductor module and method of forming the same
DE102020207966A1 (de) * 2019-11-25 2021-05-27 Volkswagen Aktiengesellschaft Kühlanordnung für elektronische Komponenten eines Kraftfahrzeugs
DE102020110937B4 (de) 2020-04-22 2022-06-09 Semikron Elektronik Gmbh & Co. Kg Kühleinrichtung zur Kühlung eines Leistungshalbleitermoduls
DE102020111528A1 (de) * 2020-04-28 2021-10-28 Semikron Elektronik Gmbh & Co. Kg Leistungselektronische Anordnung mit einem Mehrphasen-Leistungshalbleitermodul
CN114206064A (zh) * 2020-09-02 2022-03-18 春鸿电子科技(重庆)有限公司 液冷头及其制造方法
CN114361122B (zh) 2021-08-11 2025-03-11 华为技术有限公司 功率模块的封装结构及封装方法
KR102623554B1 (ko) * 2021-11-10 2024-01-11 동양피스톤 주식회사 수냉식 방열모듈 조립체
DE102022201557B3 (de) 2022-02-15 2023-07-20 Magna powertrain gmbh & co kg Baueinheit für Leistungsmodule sowie Montageverfahren für die Baueinheit für Leistungsmodule
US20240064944A1 (en) * 2022-08-17 2024-02-22 Semiconductor Components Industries, Llc Sealing method for direct liquid cooled power electronics package
CN115551302B (zh) * 2022-09-28 2025-08-12 华为数字能源技术有限公司 散热系统及电子设备
DE102022212458A1 (de) * 2022-11-22 2024-05-23 Magna powertrain gmbh & co kg Stromrichter mit direkt gekühltem Leistungsmodul und Verfahren zur Herstellung eines Stromrichters

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Cited By (12)

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Publication number Priority date Publication date Assignee Title
JPWO2016203885A1 (ja) * 2015-06-17 2017-09-21 富士電機株式会社 パワー半導体モジュール及び冷却器
US10304756B2 (en) 2015-06-17 2019-05-28 Fuji Electric Co., Ltd. Power semiconductor module and cooler
JP2017212401A (ja) * 2016-05-27 2017-11-30 日産自動車株式会社 電力変換装置の製造方法と冷却構造
JP2019110208A (ja) * 2017-12-18 2019-07-04 トヨタ自動車株式会社 リアクトルユニット
JP2022524961A (ja) * 2019-02-28 2022-05-11 ヒタチ・エナジー・スウィツァーランド・アクチェンゲゼルシャフト 冷却器フレームの一体化が向上した電力変換装置
US12016162B2 (en) 2019-02-28 2024-06-18 Audi Ag Electric power converter device with improved integration of cooler frame
JP2022524749A (ja) * 2019-03-04 2022-05-10 ヒタチ・エナジー・スウィツァーランド・アクチェンゲゼルシャフト スタンピングされたプレートの使用によるパワーコンバータの直接冷却
US12160982B2 (en) 2019-03-04 2024-12-03 Audi Ag Direct cooling of a power converter by using a stamped plate
JP2023086175A (ja) * 2021-12-10 2023-06-22 株式会社レゾナック 冷却装置
JP2023086174A (ja) * 2021-12-10 2023-06-22 株式会社レゾナック 冷却装置
JP7782243B2 (ja) 2021-12-10 2025-12-09 株式会社レゾナック 冷却装置
JP7782242B2 (ja) 2021-12-10 2025-12-09 株式会社レゾナック 冷却装置

Also Published As

Publication number Publication date
US9111900B2 (en) 2015-08-18
EP2844051A2 (de) 2015-03-04
CN104425406B (zh) 2019-01-08
US20150061112A1 (en) 2015-03-05
CN104425406A (zh) 2015-03-18
IN2014MU02658A (enExample) 2015-10-09
DE102013109589B3 (de) 2015-03-05
EP2844051A3 (de) 2016-06-01
KR20150026862A (ko) 2015-03-11

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