IN2014MU02658A - - Google Patents
Info
- Publication number
- IN2014MU02658A IN2014MU02658A IN2658MU2014A IN2014MU02658A IN 2014MU02658 A IN2014MU02658 A IN 2014MU02658A IN 2658MU2014 A IN2658MU2014 A IN 2658MU2014A IN 2014MU02658 A IN2014MU02658 A IN 2014MU02658A
- Authority
- IN
- India
- Prior art keywords
- power semiconductor
- housing component
- cooling
- cooling housing
- heat sink
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/2089—Modifications to facilitate cooling, ventilating, or heating for power electronics, e.g. for inverters for controlling motor
- H05K7/20927—Liquid coolant without phase change
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4882—Assembly of heatsink parts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/83237—Applying energy for connecting using an electron beam
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/83238—Applying energy for connecting using electric resistance welding, i.e. ohmic heating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/201—Temperature ranges
- H01L2924/20103—Temperature range 60 C=<T<100 C, 333.15 K =< T< 373.15K
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/201—Temperature ranges
- H01L2924/20104—Temperature range 100 C=<T<150 C, 373.15 K =< T < 423.15K
Abstract
The invention relates to a power semiconductor device comprising a power semiconductor module and a heat sink, wherein the heat sink has a first cooling housing component, which has a cutout passing through the first cooling housing component, and a second cooling housing component, wherein the cooling plate is arranged in the cutout, wherein the first and second cooling housing components have such a shape and are arranged relative to one another in such a way that a cavity is formed at the side of the cooling plate facing away from the power semiconductor components, wherein the cooling plate is connected to the first cooling housing component by means of a first weld seam extending circumferentially around the cooling plate, wherein the first weld seam seals the cooling plate in relation to the first cooling housing component, wherein the second cooling housing component is connected to the first cooling housing component. Furthermore, the invention relates to a method for producing a power semiconductor device. The invention provides a power semiconductor device which has a good heat conduction from the power semiconductor components to a heat sink of the power semiconductor device, through which heat sink a liquid can flow, and in the case of which the heat sink is leaktight reliably and over the long term.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE201310109589 DE102013109589B3 (en) | 2013-09-03 | 2013-09-03 | Power semiconductor device and method for producing a power semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
IN2014MU02658A true IN2014MU02658A (en) | 2015-10-09 |
Family
ID=51167798
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IN2658MU2014 IN2014MU02658A (en) | 2013-09-03 | 2014-08-19 |
Country Status (7)
Country | Link |
---|---|
US (1) | US9111900B2 (en) |
EP (1) | EP2844051A3 (en) |
JP (1) | JP2015050465A (en) |
KR (1) | KR20150026862A (en) |
CN (1) | CN104425406B (en) |
DE (1) | DE102013109589B3 (en) |
IN (1) | IN2014MU02658A (en) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102015211163A1 (en) * | 2015-06-17 | 2016-12-22 | Zf Friedrichshafen Ag | Arrangement for cooling a power module |
DE102015211160A1 (en) * | 2015-06-17 | 2016-12-22 | Zf Friedrichshafen Ag | Arrangement for cooling a power module |
JP6384609B2 (en) * | 2015-06-17 | 2018-09-05 | 富士電機株式会社 | Power semiconductor module and cooler |
EP3116292B1 (en) | 2015-07-06 | 2021-03-17 | EDAG Engineering AG | Electronic module with generative cooling body |
DE102015114188B4 (en) * | 2015-08-26 | 2019-03-07 | Semikron Elektronik Gmbh & Co. Kg | Power electronic submodule with a two-part housing |
DE102015223413A1 (en) * | 2015-11-26 | 2017-06-01 | Zf Friedrichshafen Ag | Copper-aluminum heat sinks |
US9824953B1 (en) | 2016-05-16 | 2017-11-21 | Caterpillar Inc. | Mounting and environmental protection device for an IGBT module |
JP6811551B2 (en) * | 2016-05-27 | 2021-01-13 | 日産自動車株式会社 | Manufacturing method and cooling structure of power converter |
KR101956983B1 (en) | 2016-09-20 | 2019-03-11 | 현대자동차일본기술연구소 | Power module and manufacturing method therefor |
DE102017101269B4 (en) | 2017-01-24 | 2019-03-07 | Semikron Elektronik Gmbh & Co. Kg | Power semiconductor device with a power semiconductor module and a heat sink |
DE102017001351A1 (en) * | 2017-02-11 | 2018-08-16 | Leopold Kostal Gmbh & Co. Kg | Electrical device and method of making an electrical device |
WO2018146816A1 (en) * | 2017-02-13 | 2018-08-16 | 新電元工業株式会社 | Electronic device |
JP6988432B2 (en) * | 2017-12-18 | 2022-01-05 | 株式会社デンソー | Reactor unit |
DE102019200142A1 (en) * | 2019-01-08 | 2020-07-09 | Volkswagen Aktiengesellschaft | Cooling unit for removing waste heat from at least one power component |
DE102019202903A1 (en) * | 2019-03-04 | 2020-09-10 | Abb Schweiz Ag | Electronic converter trained based on welding technologies |
DE102019202902A1 (en) * | 2019-03-04 | 2020-09-10 | Abb Schweiz Ag | Direct cooling of a converter using an embossed plate |
CN110173957B (en) * | 2019-06-19 | 2023-09-08 | 广东文轩热能科技股份有限公司 | Novel liquid cooling plate |
EP3824494B1 (en) | 2019-07-25 | 2021-12-22 | Hitachi Energy Switzerland AG | Power semiconductor module and method of forming the same |
DE102020207966A1 (en) * | 2019-11-25 | 2021-05-27 | Volkswagen Aktiengesellschaft | Cooling arrangement for electronic components of a motor vehicle |
DE102020110937B4 (en) | 2020-04-22 | 2022-06-09 | Semikron Elektronik Gmbh & Co. Kg | Cooling device for cooling a power semiconductor module |
DE102020111528A1 (en) * | 2020-04-28 | 2021-10-28 | Semikron Elektronik Gmbh & Co. Kg | Power electronic arrangement with a multi-phase power semiconductor module |
CN114206064A (en) * | 2020-09-02 | 2022-03-18 | 春鸿电子科技(重庆)有限公司 | Liquid cooling head and manufacturing method thereof |
CN114361122A (en) * | 2021-08-11 | 2022-04-15 | 华为技术有限公司 | Packaging structure and packaging method of power module |
DE102022201557B3 (en) | 2022-02-15 | 2023-07-20 | Magna powertrain gmbh & co kg | Power module assembly and assembly method for the power module assembly |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5323292A (en) * | 1992-10-06 | 1994-06-21 | Hewlett-Packard Company | Integrated multi-chip module having a conformal chip/heat exchanger interface |
US5514906A (en) * | 1993-11-10 | 1996-05-07 | Fujitsu Limited | Apparatus for cooling semiconductor chips in multichip modules |
JP3946018B2 (en) * | 2001-09-18 | 2007-07-18 | 株式会社日立製作所 | Liquid-cooled circuit device |
WO2005088714A1 (en) * | 2004-03-08 | 2005-09-22 | Remmele Engineering, Inc. | Cold plate and method of making the same |
US7071552B2 (en) * | 2004-03-29 | 2006-07-04 | Intel Corporation | IC die with directly bonded liquid cooling device |
JP4600199B2 (en) * | 2005-07-29 | 2010-12-15 | 三菱マテリアル株式会社 | Cooler and power module |
US8369090B2 (en) * | 2009-05-12 | 2013-02-05 | Iceotope Limited | Cooled electronic system |
DE102010043446B3 (en) | 2010-11-05 | 2012-01-12 | Semikron Elektronik Gmbh & Co. Kg | Performance semiconductor system |
US10269682B2 (en) * | 2015-10-09 | 2019-04-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cooling devices, packaged semiconductor devices, and methods of packaging semiconductor devices |
-
2013
- 2013-09-03 DE DE201310109589 patent/DE102013109589B3/en active Active
-
2014
- 2014-07-14 EP EP14176903.4A patent/EP2844051A3/en not_active Withdrawn
- 2014-08-19 IN IN2658MU2014 patent/IN2014MU02658A/en unknown
- 2014-08-22 KR KR20140109594A patent/KR20150026862A/en not_active Application Discontinuation
- 2014-09-01 JP JP2014176971A patent/JP2015050465A/en not_active Withdrawn
- 2014-09-03 CN CN201410446027.3A patent/CN104425406B/en active Active
- 2014-09-03 US US14/476,299 patent/US9111900B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN104425406B (en) | 2019-01-08 |
CN104425406A (en) | 2015-03-18 |
US9111900B2 (en) | 2015-08-18 |
JP2015050465A (en) | 2015-03-16 |
KR20150026862A (en) | 2015-03-11 |
DE102013109589B3 (en) | 2015-03-05 |
US20150061112A1 (en) | 2015-03-05 |
EP2844051A2 (en) | 2015-03-04 |
EP2844051A3 (en) | 2016-06-01 |
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