KR20150026862A - 전력 반도체 장치 및 전력 반도체 장치 제조 방법 - Google Patents

전력 반도체 장치 및 전력 반도체 장치 제조 방법 Download PDF

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Publication number
KR20150026862A
KR20150026862A KR20140109594A KR20140109594A KR20150026862A KR 20150026862 A KR20150026862 A KR 20150026862A KR 20140109594 A KR20140109594 A KR 20140109594A KR 20140109594 A KR20140109594 A KR 20140109594A KR 20150026862 A KR20150026862 A KR 20150026862A
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South Korea
Prior art keywords
housing part
cooling
power semiconductor
cooling housing
welding seam
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KR20140109594A
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English (en)
Korean (ko)
Inventor
보겐 잉고
베크 마르쿠스
쿠라스 할트무트
포페스쿠 알렉산더
헬도퍼 라인하르트
Original Assignee
세미크론 엘렉트로니크 지엠비에치 앤드 코. 케이지
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Publication of KR20150026862A publication Critical patent/KR20150026862A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814—Conductive parts
    • H01L21/4871—Bases, plates or heatsinks
    • H01L21/4882—Assembly of heatsink parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3672—Foil-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating
    • H05K7/2089—Modifications to facilitate cooling, ventilating, or heating for power electronics, e.g. for inverters for controlling motor
    • H05K7/20927—Liquid coolant without phase change
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/83237—Applying energy for connecting using an electron beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/83238—Applying energy for connecting using electric resistance welding, i.e. ohmic heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/201—Temperature ranges
    • H01L2924/20103—Temperature range 60 C=<T<100 C, 333.15 K =< T< 373.15K
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/201—Temperature ranges
    • H01L2924/20104—Temperature range 100 C=<T<150 C, 373.15 K =< T < 423.15K

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Thermal Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)
KR20140109594A 2013-09-03 2014-08-22 전력 반도체 장치 및 전력 반도체 장치 제조 방법 Withdrawn KR20150026862A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE201310109589 DE102013109589B3 (de) 2013-09-03 2013-09-03 Leistungshalbleitereinrichtung und Verfahren zur Herstellung einer Leistungshalbleitereinrichtung
DE102013109589.5 2013-09-03

Publications (1)

Publication Number Publication Date
KR20150026862A true KR20150026862A (ko) 2015-03-11

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Application Number Title Priority Date Filing Date
KR20140109594A Withdrawn KR20150026862A (ko) 2013-09-03 2014-08-22 전력 반도체 장치 및 전력 반도체 장치 제조 방법

Country Status (7)

Country Link
US (1) US9111900B2 (enExample)
EP (1) EP2844051A3 (enExample)
JP (1) JP2015050465A (enExample)
KR (1) KR20150026862A (enExample)
CN (1) CN104425406B (enExample)
DE (1) DE102013109589B3 (enExample)
IN (1) IN2014MU02658A (enExample)

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US10541188B2 (en) 2016-09-20 2020-01-21 Hyundai Motor Company Power module and manufacturing method thereof

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JP6384609B2 (ja) 2015-06-17 2018-09-05 富士電機株式会社 パワー半導体モジュール及び冷却器
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DE102015114188B4 (de) * 2015-08-26 2019-03-07 Semikron Elektronik Gmbh & Co. Kg Leistungselektronisches Submodul mit einem zweiteiligen Gehäuse
DE102015223413A1 (de) * 2015-11-26 2017-06-01 Zf Friedrichshafen Ag Kupfer-Alu-Kühlkörper
US9824953B1 (en) 2016-05-16 2017-11-21 Caterpillar Inc. Mounting and environmental protection device for an IGBT module
JP6811551B2 (ja) * 2016-05-27 2021-01-13 日産自動車株式会社 電力変換装置の製造方法と冷却構造
DE102017101269B4 (de) 2017-01-24 2019-03-07 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitereinrichtung mit einem Leistungshalbleitermodul und einem Kühlkörper
DE102017001351A1 (de) * 2017-02-11 2018-08-16 Leopold Kostal Gmbh & Co. Kg Elektrisches Gerät und Verfahren zur Herstellung eines elektrischen Geräts
WO2018146816A1 (ja) * 2017-02-13 2018-08-16 新電元工業株式会社 電子機器
JP6988432B2 (ja) * 2017-12-18 2022-01-05 株式会社デンソー リアクトルユニット
DE102019200142A1 (de) * 2019-01-08 2020-07-09 Volkswagen Aktiengesellschaft Kühleinheit zur Abfuhr von Abwärme von zumindest einem Leistungsbauteil
EP3703117B1 (en) * 2019-02-28 2022-11-23 Audi Ag Electric power converter device with improved integration of cooler frame
DE102019202902A1 (de) 2019-03-04 2020-09-10 Abb Schweiz Ag Direkte Kühlung eines Stromrichters durch Verwendung einer geprägten Platte
DE102019202903A1 (de) * 2019-03-04 2020-09-10 Abb Schweiz Ag Elektronischer Konverter ausgebildet basierend auf Schweißtechnologien
DE102019206523A1 (de) * 2019-05-07 2020-11-12 Zf Friedrichshafen Ag Leistungsmodul mit gehäusten Leistungshalbleitern zur steuerbaren elektrischen Leistungsversorgung eines Verbrauchers
CN110173957B (zh) * 2019-06-19 2023-09-08 广东文轩热能科技股份有限公司 一种新型液冷板
EP3824494B1 (en) 2019-07-25 2021-12-22 Hitachi Energy Switzerland AG Power semiconductor module and method of forming the same
DE102020207966A1 (de) * 2019-11-25 2021-05-27 Volkswagen Aktiengesellschaft Kühlanordnung für elektronische Komponenten eines Kraftfahrzeugs
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CN215935363U (zh) * 2020-09-02 2022-03-01 春鸿电子科技(重庆)有限公司 液冷头
CN114361122B (zh) * 2021-08-11 2025-03-11 华为技术有限公司 功率模块的封装结构及封装方法
KR102623554B1 (ko) * 2021-11-10 2024-01-11 동양피스톤 주식회사 수냉식 방열모듈 조립체
JP7782242B2 (ja) * 2021-12-10 2025-12-09 株式会社レゾナック 冷却装置
JP7782243B2 (ja) * 2021-12-10 2025-12-09 株式会社レゾナック 冷却装置
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Also Published As

Publication number Publication date
JP2015050465A (ja) 2015-03-16
US9111900B2 (en) 2015-08-18
CN104425406A (zh) 2015-03-18
CN104425406B (zh) 2019-01-08
DE102013109589B3 (de) 2015-03-05
EP2844051A3 (de) 2016-06-01
IN2014MU02658A (enExample) 2015-10-09
US20150061112A1 (en) 2015-03-05
EP2844051A2 (de) 2015-03-04

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Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20140822

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