DE102013109589B3 - Leistungshalbleitereinrichtung und Verfahren zur Herstellung einer Leistungshalbleitereinrichtung - Google Patents

Leistungshalbleitereinrichtung und Verfahren zur Herstellung einer Leistungshalbleitereinrichtung Download PDF

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Publication number
DE102013109589B3
DE102013109589B3 DE201310109589 DE102013109589A DE102013109589B3 DE 102013109589 B3 DE102013109589 B3 DE 102013109589B3 DE 201310109589 DE201310109589 DE 201310109589 DE 102013109589 A DE102013109589 A DE 102013109589A DE 102013109589 B3 DE102013109589 B3 DE 102013109589B3
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Germany
Prior art keywords
housing component
cooling
power semiconductor
cooling housing
weld
Prior art date
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Active
Application number
DE201310109589
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German (de)
English (en)
Inventor
Ingo Bogen
Markus Beck
Hartmut Kulas
Alexander Popescu
Reinhard Helldörfer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semikron Danfoss Elektronik & Co Kg De GmbH
Original Assignee
Semikron GmbH and Co KG
Semikron Elektronik GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semikron GmbH and Co KG, Semikron Elektronik GmbH and Co KG filed Critical Semikron GmbH and Co KG
Priority to DE201310109589 priority Critical patent/DE102013109589B3/de
Priority to EP14176903.4A priority patent/EP2844051A3/de
Priority to IN2658MU2014 priority patent/IN2014MU02658A/en
Priority to KR20140109594A priority patent/KR20150026862A/ko
Priority to JP2014176971A priority patent/JP2015050465A/ja
Priority to US14/476,299 priority patent/US9111900B2/en
Priority to CN201410446027.3A priority patent/CN104425406B/zh
Application granted granted Critical
Publication of DE102013109589B3 publication Critical patent/DE102013109589B3/de
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814—Conductive parts
    • H01L21/4871—Bases, plates or heatsinks
    • H01L21/4882—Assembly of heatsink parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3672—Foil-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating
    • H05K7/2089—Modifications to facilitate cooling, ventilating, or heating for power electronics, e.g. for inverters for controlling motor
    • H05K7/20927—Liquid coolant without phase change
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/83237—Applying energy for connecting using an electron beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/83238—Applying energy for connecting using electric resistance welding, i.e. ohmic heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/201—Temperature ranges
    • H01L2924/20103—Temperature range 60 C=<T<100 C, 333.15 K =< T< 373.15K
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/201—Temperature ranges
    • H01L2924/20104—Temperature range 100 C=<T<150 C, 373.15 K =< T < 423.15K

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Thermal Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)
DE201310109589 2013-09-03 2013-09-03 Leistungshalbleitereinrichtung und Verfahren zur Herstellung einer Leistungshalbleitereinrichtung Active DE102013109589B3 (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
DE201310109589 DE102013109589B3 (de) 2013-09-03 2013-09-03 Leistungshalbleitereinrichtung und Verfahren zur Herstellung einer Leistungshalbleitereinrichtung
EP14176903.4A EP2844051A3 (de) 2013-09-03 2014-07-14 Leistungshalbleitereinrichtung und Verfahren zur Herstellung einer Leistungshalbleitereinrichtung
IN2658MU2014 IN2014MU02658A (enExample) 2013-09-03 2014-08-19
KR20140109594A KR20150026862A (ko) 2013-09-03 2014-08-22 전력 반도체 장치 및 전력 반도체 장치 제조 방법
JP2014176971A JP2015050465A (ja) 2013-09-03 2014-09-01 パワー半導体装置及びパワー半導体装置を製造するための方法
US14/476,299 US9111900B2 (en) 2013-09-03 2014-09-03 Power semiconductor device and method for producing a power semiconductor device
CN201410446027.3A CN104425406B (zh) 2013-09-03 2014-09-03 功率半导体装置和用于制造功率半导体装置的方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE201310109589 DE102013109589B3 (de) 2013-09-03 2013-09-03 Leistungshalbleitereinrichtung und Verfahren zur Herstellung einer Leistungshalbleitereinrichtung

Publications (1)

Publication Number Publication Date
DE102013109589B3 true DE102013109589B3 (de) 2015-03-05

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DE201310109589 Active DE102013109589B3 (de) 2013-09-03 2013-09-03 Leistungshalbleitereinrichtung und Verfahren zur Herstellung einer Leistungshalbleitereinrichtung

Country Status (7)

Country Link
US (1) US9111900B2 (enExample)
EP (1) EP2844051A3 (enExample)
JP (1) JP2015050465A (enExample)
KR (1) KR20150026862A (enExample)
CN (1) CN104425406B (enExample)
DE (1) DE102013109589B3 (enExample)
IN (1) IN2014MU02658A (enExample)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015211160A1 (de) * 2015-06-17 2016-12-22 Zf Friedrichshafen Ag Anordnung zum Kühlen eines Leistungsmoduls
DE102015211163A1 (de) * 2015-06-17 2016-12-22 Zf Friedrichshafen Ag Anordnung zum Kühlen eines Leistungsmoduls
EP3116292A1 (de) 2015-07-06 2017-01-11 EDAG Engineering AG Elektronikmodul mit generativ erzeugtem kühlkörper
DE102015223413A1 (de) * 2015-11-26 2017-06-01 Zf Friedrichshafen Ag Kupfer-Alu-Kühlkörper
DE102017101269A1 (de) 2017-01-24 2018-07-26 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitereinrichtung mit einem Leistungshalbleitermodul und einem Kühlkörper
DE102020110937A1 (de) 2020-04-22 2021-10-28 Semikron Elektronik Gmbh & Co. Kg Kühleinrichtung zur Kühlung eines Leistungshalbleitermoduls und Verfahren zur Herstellung einer Kühleinrichtung
EP3581005B1 (de) * 2017-02-11 2022-03-16 KOSTAL Automobil Elektrik GmbH & Co. KG Elektrisches gerät und verfahren zur herstellung eines elektrischen geräts
DE102022201557B3 (de) 2022-02-15 2023-07-20 Magna powertrain gmbh & co kg Baueinheit für Leistungsmodule sowie Montageverfahren für die Baueinheit für Leistungsmodule
WO2024110277A1 (de) * 2022-11-22 2024-05-30 Magna powertrain gmbh & co kg Stromrichter mit direkt gekühltem leistungsmodul und verfahren zur herstellung eines stromrichters
US12160982B2 (en) 2019-03-04 2024-12-03 Audi Ag Direct cooling of a power converter by using a stamped plate

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JP6384609B2 (ja) 2015-06-17 2018-09-05 富士電機株式会社 パワー半導体モジュール及び冷却器
DE102015114188B4 (de) * 2015-08-26 2019-03-07 Semikron Elektronik Gmbh & Co. Kg Leistungselektronisches Submodul mit einem zweiteiligen Gehäuse
US9824953B1 (en) 2016-05-16 2017-11-21 Caterpillar Inc. Mounting and environmental protection device for an IGBT module
JP6811551B2 (ja) * 2016-05-27 2021-01-13 日産自動車株式会社 電力変換装置の製造方法と冷却構造
KR101956983B1 (ko) 2016-09-20 2019-03-11 현대자동차일본기술연구소 파워 모듈 및 그 제조 방법
WO2018146816A1 (ja) * 2017-02-13 2018-08-16 新電元工業株式会社 電子機器
JP6988432B2 (ja) * 2017-12-18 2022-01-05 株式会社デンソー リアクトルユニット
DE102019200142A1 (de) * 2019-01-08 2020-07-09 Volkswagen Aktiengesellschaft Kühleinheit zur Abfuhr von Abwärme von zumindest einem Leistungsbauteil
EP3703117B1 (en) * 2019-02-28 2022-11-23 Audi Ag Electric power converter device with improved integration of cooler frame
DE102019202903A1 (de) * 2019-03-04 2020-09-10 Abb Schweiz Ag Elektronischer Konverter ausgebildet basierend auf Schweißtechnologien
DE102019206523A1 (de) * 2019-05-07 2020-11-12 Zf Friedrichshafen Ag Leistungsmodul mit gehäusten Leistungshalbleitern zur steuerbaren elektrischen Leistungsversorgung eines Verbrauchers
CN110173957B (zh) * 2019-06-19 2023-09-08 广东文轩热能科技股份有限公司 一种新型液冷板
EP3824494B1 (en) 2019-07-25 2021-12-22 Hitachi Energy Switzerland AG Power semiconductor module and method of forming the same
DE102020207966A1 (de) * 2019-11-25 2021-05-27 Volkswagen Aktiengesellschaft Kühlanordnung für elektronische Komponenten eines Kraftfahrzeugs
DE102020111528A1 (de) * 2020-04-28 2021-10-28 Semikron Elektronik Gmbh & Co. Kg Leistungselektronische Anordnung mit einem Mehrphasen-Leistungshalbleitermodul
CN215935363U (zh) * 2020-09-02 2022-03-01 春鸿电子科技(重庆)有限公司 液冷头
CN114361122B (zh) * 2021-08-11 2025-03-11 华为技术有限公司 功率模块的封装结构及封装方法
KR102623554B1 (ko) * 2021-11-10 2024-01-11 동양피스톤 주식회사 수냉식 방열모듈 조립체
JP7782242B2 (ja) * 2021-12-10 2025-12-09 株式会社レゾナック 冷却装置
JP7782243B2 (ja) * 2021-12-10 2025-12-09 株式会社レゾナック 冷却装置
US20240064944A1 (en) * 2022-08-17 2024-02-22 Semiconductor Components Industries, Llc Sealing method for direct liquid cooled power electronics package
CN115551302B (zh) * 2022-09-28 2025-08-12 华为数字能源技术有限公司 散热系统及电子设备

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JP2007036094A (ja) * 2005-07-29 2007-02-08 Mitsubishi Materials Corp 冷却器及びパワーモジュール

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US7071552B2 (en) * 2004-03-29 2006-07-04 Intel Corporation IC die with directly bonded liquid cooling device
US8369090B2 (en) * 2009-05-12 2013-02-05 Iceotope Limited Cooled electronic system
DE102010043446B3 (de) 2010-11-05 2012-01-12 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitersystem
US10269682B2 (en) * 2015-10-09 2019-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. Cooling devices, packaged semiconductor devices, and methods of packaging semiconductor devices

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US20030053294A1 (en) * 2001-09-18 2003-03-20 Kazuji Yamada Liquid cooled circuit device and a manufacturing method thereof
US20050199372A1 (en) * 2004-03-08 2005-09-15 Frazer James T. Cold plate and method of making the same
JP2007036094A (ja) * 2005-07-29 2007-02-08 Mitsubishi Materials Corp 冷却器及びパワーモジュール

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015211163A1 (de) * 2015-06-17 2016-12-22 Zf Friedrichshafen Ag Anordnung zum Kühlen eines Leistungsmoduls
DE102015211160A1 (de) * 2015-06-17 2016-12-22 Zf Friedrichshafen Ag Anordnung zum Kühlen eines Leistungsmoduls
EP3116292A1 (de) 2015-07-06 2017-01-11 EDAG Engineering AG Elektronikmodul mit generativ erzeugtem kühlkörper
DE102015223413A1 (de) * 2015-11-26 2017-06-01 Zf Friedrichshafen Ag Kupfer-Alu-Kühlkörper
DE102017101269A1 (de) 2017-01-24 2018-07-26 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitereinrichtung mit einem Leistungshalbleitermodul und einem Kühlkörper
DE102017101269B4 (de) 2017-01-24 2019-03-07 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitereinrichtung mit einem Leistungshalbleitermodul und einem Kühlkörper
EP3581005B1 (de) * 2017-02-11 2022-03-16 KOSTAL Automobil Elektrik GmbH & Co. KG Elektrisches gerät und verfahren zur herstellung eines elektrischen geräts
US12160982B2 (en) 2019-03-04 2024-12-03 Audi Ag Direct cooling of a power converter by using a stamped plate
DE102020110937A1 (de) 2020-04-22 2021-10-28 Semikron Elektronik Gmbh & Co. Kg Kühleinrichtung zur Kühlung eines Leistungshalbleitermoduls und Verfahren zur Herstellung einer Kühleinrichtung
DE102020110937B4 (de) 2020-04-22 2022-06-09 Semikron Elektronik Gmbh & Co. Kg Kühleinrichtung zur Kühlung eines Leistungshalbleitermoduls
DE102022201557B3 (de) 2022-02-15 2023-07-20 Magna powertrain gmbh & co kg Baueinheit für Leistungsmodule sowie Montageverfahren für die Baueinheit für Leistungsmodule
WO2023156114A1 (de) 2022-02-15 2023-08-24 Magna powertrain gmbh & co kg Baueinheit für leistungsmodule sowie montageverfahren für die baueinheit für leistungsmodule
WO2024110277A1 (de) * 2022-11-22 2024-05-30 Magna powertrain gmbh & co kg Stromrichter mit direkt gekühltem leistungsmodul und verfahren zur herstellung eines stromrichters

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Publication number Publication date
JP2015050465A (ja) 2015-03-16
US9111900B2 (en) 2015-08-18
CN104425406A (zh) 2015-03-18
CN104425406B (zh) 2019-01-08
EP2844051A3 (de) 2016-06-01
IN2014MU02658A (enExample) 2015-10-09
US20150061112A1 (en) 2015-03-05
KR20150026862A (ko) 2015-03-11
EP2844051A2 (de) 2015-03-04

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