JP2015042079A - ダイオード回路およびdc−dcコンバータ - Google Patents
ダイオード回路およびdc−dcコンバータ Download PDFInfo
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- 230000008054 signal transmission Effects 0.000 claims abstract description 31
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 22
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 239000003990 capacitor Substances 0.000 claims description 7
- 238000010586 diagram Methods 0.000 description 8
- 229910002704 AlGaN Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Dc-Dc Converters (AREA)
Abstract
【解決手段】ダイオード回路1は、窒化ガリウム系半導体を用いたスイッチング素子2と、スイッチング素子に直列接続される、窒化ガリウム系半導体を用いたダイオード3と、ダイオードに並列接続されるインピーダンス素子4と、ダイオードのアノード電極、インピーダンス素子の一端部、およびスイッチング素子の制御電極に接続される第1信号伝送部5と、順バイアス時に、第1信号伝送部から、ダイオードまたはインピーダンス素子と、スイッチング素子と、を通過して流れる電流を出力する第2信号伝送部6と、を備える。
【選択図】図1
Description
前記スイッチング素子に直列接続される、窒化ガリウム系半導体を用いたダイオードと、
前記ダイオードに並列接続されるインピーダンス素子と、
前記ダイオードのアノード電極、前記インピーダンス素子の一端部、および前記スイッチング素子の制御電極に接続される第1信号伝送部と、
順バイアス時に、前記第1信号伝送部から、前記ダイオードまたは前記インピーダンス素子と、前記スイッチング素子と、を通過して流れる電流を出力する第2信号伝送部と、を備えるダイオード回路が提供される。
Claims (6)
- 窒化ガリウム系半導体を用いたスイッチング素子と、
前記スイッチング素子に直列接続される、窒化ガリウム系半導体を用いたダイオードと、
前記ダイオードに並列接続されるインピーダンス素子と、
前記ダイオードのアノード電極、前記インピーダンス素子の一端部、および前記スイッチング素子の制御電極に接続される第1信号伝送部と、
順バイアス時に、前記第1信号伝送部から、前記ダイオードまたは前記インピーダンス素子と、前記スイッチング素子と、を通過して流れる電流を出力する第2信号伝送部と、を備えるダイオード回路。 - 並列接続された前記ダイオードおよび前記インピーダンス素子を有する並列回路は、前記第1信号伝送部から前記第2信号伝送部の方向に電流を流す順バイアス時には、前記並列回路に印加される電圧が所定電圧未満では前記ダイオードではなく前記インピーダンス素子に電流を流し、前記並列回路に印加される電圧が前記所定電圧以上では前記インピーダンス素子ではなく前記ダイオードに電流を流す請求項1に記載のダイオード回路。
- 前記順バイアス時に、前記並列回路に印加される電圧が前記所定電圧未満のときの前記ダイオードのインピーダンスは前記インピーダンス素子のインピーダンスよりも高く、前記並列回路に印加される電圧が前記所定電圧以上のときの前記ダイオードのインピーダンスは前記インピーダンス素子のインピーダンスよりも低い請求項2に記載のダイオード回路。
- 前記スイッチング素子および前記ダイオードは、共通の基板上に配置される請求項1乃至3のいずれかに記載のダイオード回路。
- 入力電圧を供給する入力電源の一端側の第1入力ノードと、中間ノードとの間に接続される、前記スイッチング素子とは異なる他のスイッチング素子と、
前記中間ノードに前記第2信号伝送部が接続され、前記入力電源の他端側の第2入力ノードに前記第1信号伝送部が接続される請求項1乃至4のいずれかに記載のダイオード回路と、
前記中間ノードと、出力ノードとの間に接続されるインダクタ素子と、
前記他のスイッチング素子を周期的にオンまたはオフ制御する駆動部と、を備えるDC−DCコンバータ。 - 前記ダイオード回路が順バイアスになる期間と、前記他のスイッチング素子がオンになる期間とが交互に繰り返され、
前記ダイオード回路が順バイアスになる期間内は、前記第2入力ノードから、前記ダイオード回路の前記第1信号伝送部および前記第2信号伝送部と、前記インダクタ素子と、を通過して、前記キャパシタ素子を充電し、
前記他のスイッチング素子がオンになる期間内は、前記第1入力ノードから、前記他のスイッチング素子と前記インダクタ素子とを通過して、前記キャパシタを充電する請求項5に記載のDC−DCコンバータ。
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JP2013172354A JP6038745B2 (ja) | 2013-08-22 | 2013-08-22 | ダイオード回路およびdc−dcコンバータ |
US14/176,633 US9196686B2 (en) | 2013-08-22 | 2014-02-10 | Diode circuit and DC to DC converter |
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JP2013172354A JP6038745B2 (ja) | 2013-08-22 | 2013-08-22 | ダイオード回路およびdc−dcコンバータ |
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JP2018006600A (ja) * | 2016-07-04 | 2018-01-11 | 豊田合成株式会社 | 半導体素子および電気回路 |
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JP6038745B2 (ja) * | 2013-08-22 | 2016-12-07 | 株式会社東芝 | ダイオード回路およびdc−dcコンバータ |
FR3036897B1 (fr) | 2015-05-29 | 2018-06-15 | Wupatec | Bloc convertisseur continu-continu, convertisseur continu-continu le comprenant et systeme de suivi d'enveloppe associe |
TWI607298B (zh) * | 2016-04-28 | 2017-12-01 | Hestia Power Inc | Adjustable voltage level wide bandgap semiconductor device |
CN107395195B (zh) * | 2016-05-16 | 2020-11-13 | 上海瀚薪科技有限公司 | 一种可调式电压准位的宽能隙半导体元件 |
US11923716B2 (en) | 2019-09-13 | 2024-03-05 | Milwaukee Electric Tool Corporation | Power converters with wide bandgap semiconductors |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02150076A (ja) * | 1988-11-30 | 1990-06-08 | Sharp Corp | 半導体装置 |
JP2007174864A (ja) * | 2005-12-26 | 2007-07-05 | Mitsubishi Electric Corp | 電力変換装置 |
JP2011004243A (ja) * | 2009-06-19 | 2011-01-06 | Sumitomo Electric Ind Ltd | スイッチ回路 |
JP2012235378A (ja) * | 2011-05-06 | 2012-11-29 | Sharp Corp | 半導体装置および電子機器 |
JP2013069785A (ja) * | 2011-09-21 | 2013-04-18 | Toshiba Corp | 窒化物半導体装置 |
US9196686B2 (en) * | 2013-08-22 | 2015-11-24 | Kabushiki Kaisha Toshiba | Diode circuit and DC to DC converter |
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JP5358882B2 (ja) | 2007-02-09 | 2013-12-04 | サンケン電気株式会社 | 整流素子を含む複合半導体装置 |
JP5040387B2 (ja) * | 2007-03-20 | 2012-10-03 | 株式会社デンソー | 半導体装置 |
US20130299841A1 (en) * | 2012-05-11 | 2013-11-14 | Infineon Technologies Austria Ag | GaN-Based Optocoupler |
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02150076A (ja) * | 1988-11-30 | 1990-06-08 | Sharp Corp | 半導体装置 |
JP2007174864A (ja) * | 2005-12-26 | 2007-07-05 | Mitsubishi Electric Corp | 電力変換装置 |
JP2011004243A (ja) * | 2009-06-19 | 2011-01-06 | Sumitomo Electric Ind Ltd | スイッチ回路 |
JP2012235378A (ja) * | 2011-05-06 | 2012-11-29 | Sharp Corp | 半導体装置および電子機器 |
JP2013069785A (ja) * | 2011-09-21 | 2013-04-18 | Toshiba Corp | 窒化物半導体装置 |
US9196686B2 (en) * | 2013-08-22 | 2015-11-24 | Kabushiki Kaisha Toshiba | Diode circuit and DC to DC converter |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018006600A (ja) * | 2016-07-04 | 2018-01-11 | 豊田合成株式会社 | 半導体素子および電気回路 |
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