JP2015029087A5 - - Google Patents

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Publication number
JP2015029087A5
JP2015029087A5 JP2014131751A JP2014131751A JP2015029087A5 JP 2015029087 A5 JP2015029087 A5 JP 2015029087A5 JP 2014131751 A JP2014131751 A JP 2014131751A JP 2014131751 A JP2014131751 A JP 2014131751A JP 2015029087 A5 JP2015029087 A5 JP 2015029087A5
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JP
Japan
Prior art keywords
layer
oxide semiconductor
opening
electrode layer
semiconductor device
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JP2014131751A
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English (en)
Japanese (ja)
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JP6359892B2 (ja
JP2015029087A (ja
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Priority to JP2014131751A priority Critical patent/JP6359892B2/ja
Priority claimed from JP2014131751A external-priority patent/JP6359892B2/ja
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Publication of JP2015029087A5 publication Critical patent/JP2015029087A5/ja
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JP2014131751A 2013-06-28 2014-06-26 半導体装置 Active JP6359892B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014131751A JP6359892B2 (ja) 2013-06-28 2014-06-26 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013136451 2013-06-28
JP2013136451 2013-06-28
JP2014131751A JP6359892B2 (ja) 2013-06-28 2014-06-26 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2018117778A Division JP6602918B2 (ja) 2013-06-28 2018-06-21 半導体装置及びトランジスタ

Publications (3)

Publication Number Publication Date
JP2015029087A JP2015029087A (ja) 2015-02-12
JP2015029087A5 true JP2015029087A5 (cg-RX-API-DMAC7.html) 2017-08-03
JP6359892B2 JP6359892B2 (ja) 2018-07-18

Family

ID=52114715

Family Applications (7)

Application Number Title Priority Date Filing Date
JP2014131751A Active JP6359892B2 (ja) 2013-06-28 2014-06-26 半導体装置
JP2018117778A Active JP6602918B2 (ja) 2013-06-28 2018-06-21 半導体装置及びトランジスタ
JP2019163533A Active JP6852133B2 (ja) 2013-06-28 2019-09-09 表示装置
JP2021037947A Active JP7052110B2 (ja) 2013-06-28 2021-03-10 表示装置
JP2022056834A Active JP7392024B2 (ja) 2013-06-28 2022-03-30 半導体装置
JP2023198273A Withdrawn JP2024019204A (ja) 2013-06-28 2023-11-22 半導体装置
JP2025115048A Pending JP2025137548A (ja) 2013-06-28 2025-07-08 半導体装置

Family Applications After (6)

Application Number Title Priority Date Filing Date
JP2018117778A Active JP6602918B2 (ja) 2013-06-28 2018-06-21 半導体装置及びトランジスタ
JP2019163533A Active JP6852133B2 (ja) 2013-06-28 2019-09-09 表示装置
JP2021037947A Active JP7052110B2 (ja) 2013-06-28 2021-03-10 表示装置
JP2022056834A Active JP7392024B2 (ja) 2013-06-28 2022-03-30 半導体装置
JP2023198273A Withdrawn JP2024019204A (ja) 2013-06-28 2023-11-22 半導体装置
JP2025115048A Pending JP2025137548A (ja) 2013-06-28 2025-07-08 半導体装置

Country Status (3)

Country Link
US (1) US20150001533A1 (cg-RX-API-DMAC7.html)
JP (7) JP6359892B2 (cg-RX-API-DMAC7.html)
KR (1) KR20150002500A (cg-RX-API-DMAC7.html)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9496330B2 (en) 2013-08-02 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US10043913B2 (en) 2014-04-30 2018-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor film, semiconductor device, display device, module, and electronic device
TWI663726B (zh) 2014-05-30 2019-06-21 Semiconductor Energy Laboratory Co., Ltd. 半導體裝置、模組及電子裝置
KR20160114511A (ko) 2015-03-24 2016-10-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
US9806200B2 (en) 2015-03-27 2017-10-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN105140271B (zh) * 2015-07-16 2019-03-26 深圳市华星光电技术有限公司 薄膜晶体管、薄膜晶体管的制造方法及显示装置
CN105097557A (zh) * 2015-09-25 2015-11-25 深圳市华星光电技术有限公司 一种tft基板、tft开关管及其制造方法
US10714633B2 (en) 2015-12-15 2020-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
WO2017149413A1 (en) * 2016-03-04 2017-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR20180123028A (ko) 2016-03-11 2018-11-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장비, 상기 반도체 장치의 제작 방법, 및 상기 반도체 장치를 포함하는 표시 장치
CN109075206B (zh) * 2016-04-13 2022-08-16 株式会社半导体能源研究所 半导体装置及包括该半导体装置的显示装置
CN109075209B (zh) * 2016-05-20 2022-05-27 株式会社半导体能源研究所 半导体装置或包括该半导体装置的显示装置
DE112017005330T5 (de) * 2016-10-21 2019-08-08 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung
TW202224189A (zh) * 2016-10-21 2022-06-16 日商半導體能源研究所股份有限公司 複合氧化物及電晶體
CN108022937B (zh) * 2016-10-31 2021-10-01 乐金显示有限公司 具有双层氧化物半导体的薄膜晶体管基板
KR102329159B1 (ko) * 2016-10-31 2021-11-23 엘지디스플레이 주식회사 이중층 산화물 반도체 물질을 구비한 박막 트랜지스터 기판
DE102018003729A1 (de) * 2017-04-27 2018-10-31 Allied Vision Technologies Gmbh Vorrichtung zur Erfassung von Daten
EP3561893B1 (en) * 2018-04-26 2022-06-15 Canon Kabushiki Kaisha Organic device and method of manufacturing the same
US12040409B2 (en) 2021-02-09 2024-07-16 Taiwan Semiconductor Manufacturing Company Limited Thin film transistor including a dielectric diffusion barrier and methods for forming the same
CN114695394A (zh) * 2022-03-29 2022-07-01 广州华星光电半导体显示技术有限公司 阵列基板和显示面板

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7297977B2 (en) * 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
JP5138163B2 (ja) * 2004-11-10 2013-02-06 キヤノン株式会社 電界効果型トランジスタ
WO2010029866A1 (en) * 2008-09-12 2010-03-18 Semiconductor Energy Laboratory Co., Ltd. Display device
TWI502739B (zh) 2008-11-13 2015-10-01 Semiconductor Energy Lab 半導體裝置及其製造方法
WO2010064590A1 (en) * 2008-12-01 2010-06-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI476917B (zh) * 2009-04-16 2015-03-11 Semiconductor Energy Lab 半導體裝置和其製造方法
KR101944656B1 (ko) * 2009-06-30 2019-04-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제조 방법
KR101460869B1 (ko) 2009-09-04 2014-11-11 가부시끼가이샤 도시바 박막 트랜지스터 및 그 제조 방법
CN105679766A (zh) * 2009-09-16 2016-06-15 株式会社半导体能源研究所 晶体管及显示设备
KR102321565B1 (ko) * 2009-09-24 2021-11-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막 및 반도체 장치
JPWO2011039853A1 (ja) * 2009-09-30 2013-02-21 キヤノン株式会社 薄膜トランジスタ
KR101980505B1 (ko) * 2009-10-08 2019-05-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체층, 반도체 장치 및 그 제조 방법
KR101779349B1 (ko) * 2009-10-14 2017-09-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP5693070B2 (ja) * 2010-07-16 2015-04-01 キヤノン株式会社 動画編集装置及びその制御方法、プログラム、記憶媒体
KR101851817B1 (ko) * 2010-09-03 2018-04-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 구동 방법
JP5626978B2 (ja) * 2010-09-08 2014-11-19 富士フイルム株式会社 薄膜トランジスタおよびその製造方法、並びにその薄膜トランジスタを備えた装置
CN105336791B (zh) 2010-12-03 2018-10-26 株式会社半导体能源研究所 氧化物半导体膜以及半导体装置
US9443984B2 (en) * 2010-12-28 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI525614B (zh) * 2011-01-05 2016-03-11 半導體能源研究所股份有限公司 儲存元件、儲存裝置、及信號處理電路
US8869903B2 (en) * 2011-06-30 2014-10-28 Baker Hughes Incorporated Apparatus to remotely actuate valves and method thereof
US9214474B2 (en) * 2011-07-08 2015-12-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8748886B2 (en) 2011-07-08 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9048323B2 (en) * 2012-04-30 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

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