JP2014530490A - 有機電界効果トランジスタ - Google Patents
有機電界効果トランジスタ Download PDFInfo
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- JP2014530490A JP2014530490A JP2014530290A JP2014530290A JP2014530490A JP 2014530490 A JP2014530490 A JP 2014530490A JP 2014530290 A JP2014530290 A JP 2014530290A JP 2014530290 A JP2014530290 A JP 2014530290A JP 2014530490 A JP2014530490 A JP 2014530490A
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- 229910052804 chromium Inorganic materials 0.000 description 1
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- 239000004020 conductor Substances 0.000 description 1
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- 125000005678 ethenylene group Chemical group [H]C([*:1])=C([H])[*:2] 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
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- 125000000524 functional group Chemical group 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000007646 gravure printing Methods 0.000 description 1
- 125000001188 haloalkyl group Chemical group 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
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- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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- 238000004528 spin coating Methods 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
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- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
Landscapes
- Thin Film Transistor (AREA)
Abstract
Description
2 下部基板
3 ソース電極
4 ドレイン電極
5 半導体層
6 誘電体層
7 ゲート電極
8 自己組織化単層(SAM)
9 多孔質層
Claims (10)
- プラスチック基板(2)と呼ばれる、プラスチック材料で作られた少なくとも1つの下部基板と、前記プラスチック基板(2)上に堆積された、それぞれソース電極(3)及びドレイン電極(4)である2つの電極(3、4)と、有機半導体材料で作られ、前記電極(3、4)の上部かつそれらと接触して、並びに前記プラスチック基板(2)の上部に堆積された半導体層(5)と、誘電材料で作られ、前記半導体層(5)上に堆積された誘電体層(6)と、前記誘電体層(6)上に形成されたゲート電極(7)と、を含む有機トランジスタ(1)であって、それはさらに、誘電材料で作られ、前記プラスチック基板(2)と前記半導体層(5)との間に延在する多孔質層(9)を含み、前記多孔質層(9)は、少なくとも前記ソース(3)及びドレイン(4)電極の間の領域の下に延在し、前記プラスチック基板(2)の表面の誘電率を低下させる、有機トランジスタ(1)。
- 前記多孔質層(9)の孔は50ナノメートルより小さい直径を有する、請求項1に記載の有機トランジスタ。
- 前記半導体層(5)は15ナノメートル以下の粗度を有する、請求項1又は2に記載の有機トランジスタ。
- 前記多孔質層(9)の末端基は非極性である、請求項1から3の何れか1項に記載の有機トランジスタ。
- 前記多孔質層(9)は2.5より低い誘電率を有する、請求項1から4の何れか1項に記載の有機トランジスタ。
- 前記多孔質層(9)は、アクリレートモノマー及び/又は少なくとも1つのその誘導体から、あるいはポリスチレン、ポリビニルフェノール、若しくはその混合物から得られる、請求項1から5の何れか1項に記載の有機トランジスタ。
- 前記多孔質層(9)はマスクを介したメチルメタクリレートの光架橋によって得られる、請求項6に記載の有機トランジスタ。
- 前記多孔質層(9)はシランから得られる、請求項1から5の何れか1項に記載の有機トランジスタ。
- 前記多孔質層(9)は多孔質シリカで作られる、請求項1から5の何れか1項に記載の有機トランジスタ。
- 前記多孔質層(9)は、ゾル−ゲル法によって得られた多孔質アルミナで作られる、請求項1から5の何れか1項に記載の有機トランジスタ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1158178 | 2011-09-14 | ||
FR1158178A FR2980040B1 (fr) | 2011-09-14 | 2011-09-14 | Transistor organique a effet de champ |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2014530490A true JP2014530490A (ja) | 2014-11-17 |
Family
ID=46458557
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014530290A Pending JP2014530490A (ja) | 2011-09-14 | 2012-06-11 | 有機電界効果トランジスタ |
Country Status (6)
Country | Link |
---|---|
US (1) | US9741953B2 (ja) |
EP (1) | EP2756531B1 (ja) |
JP (1) | JP2014530490A (ja) |
KR (1) | KR20140059787A (ja) |
FR (1) | FR2980040B1 (ja) |
WO (1) | WO2013038077A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102038124B1 (ko) | 2016-06-27 | 2019-10-29 | 숭실대학교산학협력단 | 유기 반도체 소자의 제조 방법 |
US10991894B2 (en) | 2015-03-19 | 2021-04-27 | Foundation Of Soongsil University-Industry Cooperation | Compound of organic semiconductor and organic semiconductor device using the same |
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2011
- 2011-09-14 FR FR1158178A patent/FR2980040B1/fr not_active Expired - Fee Related
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2012
- 2012-06-11 JP JP2014530290A patent/JP2014530490A/ja active Pending
- 2012-06-11 KR KR1020147005116A patent/KR20140059787A/ko not_active Application Discontinuation
- 2012-06-11 WO PCT/FR2012/051301 patent/WO2013038077A1/fr active Application Filing
- 2012-06-11 EP EP12732691.6A patent/EP2756531B1/fr not_active Not-in-force
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2014
- 2014-02-12 US US14/178,805 patent/US9741953B2/en active Active
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JP2001522536A (ja) * | 1997-04-29 | 2001-11-13 | アライドシグナル・インコーポレーテッド | ナノポーラス・シリカ薄膜を製造するための改善された方法 |
WO2003041167A1 (fr) * | 2001-11-05 | 2003-05-15 | Mitsumasa Koyanagi | Dispositif semi-conducteur comprenant un film en materiau a constante dielectrique faible et procede de fabrication associe |
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Also Published As
Publication number | Publication date |
---|---|
EP2756531A1 (fr) | 2014-07-23 |
FR2980040B1 (fr) | 2016-02-05 |
EP2756531B1 (fr) | 2018-10-24 |
US9741953B2 (en) | 2017-08-22 |
US20140183507A1 (en) | 2014-07-03 |
WO2013038077A1 (fr) | 2013-03-21 |
FR2980040A1 (fr) | 2013-03-15 |
KR20140059787A (ko) | 2014-05-16 |
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