WO2009022583A1 - 多孔質シリカ前駆体組成物及びその作製方法、多孔質シリカ膜及びその形成方法、半導体素子、画像表示装置、並びに液晶表示装置 - Google Patents
多孔質シリカ前駆体組成物及びその作製方法、多孔質シリカ膜及びその形成方法、半導体素子、画像表示装置、並びに液晶表示装置 Download PDFInfo
- Publication number
- WO2009022583A1 WO2009022583A1 PCT/JP2008/064046 JP2008064046W WO2009022583A1 WO 2009022583 A1 WO2009022583 A1 WO 2009022583A1 JP 2008064046 W JP2008064046 W JP 2008064046W WO 2009022583 A1 WO2009022583 A1 WO 2009022583A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- porous silica
- display device
- same
- precursor composition
- liquid crystal
- Prior art date
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title abstract 14
- 239000000377 silicon dioxide Substances 0.000 title abstract 7
- 239000002243 precursor Substances 0.000 title abstract 4
- 239000004973 liquid crystal related substance Substances 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 125000000217 alkyl group Chemical group 0.000 abstract 2
- 239000000126 substance Substances 0.000 abstract 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 abstract 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000010304 firing Methods 0.000 abstract 1
- 125000005843 halogen group Chemical group 0.000 abstract 1
- 150000003856 quaternary ammonium compounds Chemical class 0.000 abstract 1
- 229910000077 silane Inorganic materials 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31695—Deposition of porous oxides or porous glassy oxides or oxide based porous glass
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/02—Polysilicates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/3027—IV compounds
- H01S5/3031—Si
- H01S5/304—Si porous Si
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Silicon Compounds (AREA)
- Paints Or Removers (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020107002372A KR101167548B1 (ko) | 2007-08-10 | 2008-08-05 | 다공질 실리카 전구체 조성물 및 그 제조 방법, 다공질 실리카막 및 그 형성 방법, 반도체 소자, 화상 표시 장치, 그리고 액정 표시 장치 |
CN200880100611A CN101765561A (zh) | 2007-08-10 | 2008-08-05 | 多孔质二氧化硅前体组合物及其制备方法、多孔质二氧化硅膜及其形成方法、半导体元件、图像显示装置及液晶显示装置 |
US12/670,117 US8471140B2 (en) | 2007-08-10 | 2008-08-05 | Porous silica precursor composition and method for preparing the precursor composition, porous silica film and method for preparing the porous silica film, semiconductor element, apparatus for displaying an image, as well as liquid crystal display |
JP2009528087A JP5586227B2 (ja) | 2007-08-10 | 2008-08-05 | 多孔質シリカ前駆体組成物及びその作製方法、多孔質シリカ膜及びその形成方法、半導体素子、画像表示装置、並びに液晶表示装置 |
DE112008002142T DE112008002142T5 (de) | 2007-08-10 | 2008-08-05 | Vorläuferzusammensetzung für poröse Siliziumdioxid und Verfahren zur Herstellung der Vorläuferzusammensetzung, poröser Siliziumdioxidfilm und Verfahren zur Herstellung des porösen Siliziumdioxidfilms, Halbleiterelement, Gerät zur Anzeige eines Bilds sowie Flüssigkristallanzeige |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-209486 | 2007-08-10 | ||
JP2007209486 | 2007-08-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009022583A1 true WO2009022583A1 (ja) | 2009-02-19 |
Family
ID=40350637
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/064046 WO2009022583A1 (ja) | 2007-08-10 | 2008-08-05 | 多孔質シリカ前駆体組成物及びその作製方法、多孔質シリカ膜及びその形成方法、半導体素子、画像表示装置、並びに液晶表示装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8471140B2 (ja) |
JP (1) | JP5586227B2 (ja) |
KR (1) | KR101167548B1 (ja) |
CN (1) | CN101765561A (ja) |
DE (1) | DE112008002142T5 (ja) |
TW (1) | TW200924060A (ja) |
WO (1) | WO2009022583A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010254559A (ja) * | 2009-03-31 | 2010-11-11 | Mitsubishi Chemicals Corp | シリカ多孔質体の製造方法 |
JP2017039618A (ja) * | 2015-08-19 | 2017-02-23 | 京セラドキュメントソリューションズ株式会社 | シリカ粉体及び正帯電性トナー |
WO2022059353A1 (ja) * | 2020-09-18 | 2022-03-24 | Agc株式会社 | シリカ膜付き基板 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2980040B1 (fr) * | 2011-09-14 | 2016-02-05 | Commissariat Energie Atomique | Transistor organique a effet de champ |
CN108461383A (zh) * | 2018-02-08 | 2018-08-28 | 澳洋集团有限公司 | 降低SiO2钝化层中孔隙的方法及LED的制备方法 |
CN110330235B (zh) * | 2019-06-11 | 2021-10-01 | 惠科股份有限公司 | 多孔二氧化硅薄膜及其制备方法、以及显示面板 |
KR102531279B1 (ko) * | 2021-01-15 | 2023-05-11 | 한국세라믹기술원 | 비불소계 알킬실란 표면 처리에 의한 소수성 메조포러스 실리카 및 이의 제조방법 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005154723A (ja) * | 2003-10-30 | 2005-06-16 | Jsr Corp | 絶縁膜形成用組成物、絶縁膜形成用組成物の製造方法、絶縁膜およびその形成方法 |
JP2007134420A (ja) * | 2005-11-09 | 2007-05-31 | Ulvac Japan Ltd | 疎水性多孔質シリカ材料による構造物内部の埋め込み方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3954842B2 (ja) | 2001-08-02 | 2007-08-08 | 株式会社アルバック | 疎水性多孔質材料の製造方法 |
JP2005191437A (ja) | 2003-12-26 | 2005-07-14 | Ricoh Co Ltd | 半導体装置、その製造方法、および表示装置 |
JP4798330B2 (ja) | 2004-09-03 | 2011-10-19 | Jsr株式会社 | 絶縁膜形成用組成物、絶縁膜、およびその形成方法 |
JP4798329B2 (ja) | 2004-09-03 | 2011-10-19 | Jsr株式会社 | 絶縁膜形成用組成物、絶縁膜、およびその形成方法 |
JP4657859B2 (ja) | 2005-09-09 | 2011-03-23 | ローム株式会社 | 多孔質薄膜の製造方法、多孔質薄膜およびこれを用いた半導体装置 |
-
2008
- 2008-08-05 US US12/670,117 patent/US8471140B2/en not_active Expired - Fee Related
- 2008-08-05 JP JP2009528087A patent/JP5586227B2/ja not_active Expired - Fee Related
- 2008-08-05 CN CN200880100611A patent/CN101765561A/zh active Pending
- 2008-08-05 WO PCT/JP2008/064046 patent/WO2009022583A1/ja active Application Filing
- 2008-08-05 DE DE112008002142T patent/DE112008002142T5/de not_active Withdrawn
- 2008-08-05 KR KR1020107002372A patent/KR101167548B1/ko active IP Right Grant
- 2008-08-08 TW TW097130423A patent/TW200924060A/zh unknown
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005154723A (ja) * | 2003-10-30 | 2005-06-16 | Jsr Corp | 絶縁膜形成用組成物、絶縁膜形成用組成物の製造方法、絶縁膜およびその形成方法 |
JP2007134420A (ja) * | 2005-11-09 | 2007-05-31 | Ulvac Japan Ltd | 疎水性多孔質シリカ材料による構造物内部の埋め込み方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010254559A (ja) * | 2009-03-31 | 2010-11-11 | Mitsubishi Chemicals Corp | シリカ多孔質体の製造方法 |
JP2017039618A (ja) * | 2015-08-19 | 2017-02-23 | 京セラドキュメントソリューションズ株式会社 | シリカ粉体及び正帯電性トナー |
WO2022059353A1 (ja) * | 2020-09-18 | 2022-03-24 | Agc株式会社 | シリカ膜付き基板 |
Also Published As
Publication number | Publication date |
---|---|
US20100220274A1 (en) | 2010-09-02 |
CN101765561A (zh) | 2010-06-30 |
KR20100038423A (ko) | 2010-04-14 |
KR101167548B1 (ko) | 2012-07-20 |
TW200924060A (en) | 2009-06-01 |
US8471140B2 (en) | 2013-06-25 |
JPWO2009022583A1 (ja) | 2010-11-11 |
JP5586227B2 (ja) | 2014-09-10 |
DE112008002142T5 (de) | 2010-07-15 |
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