JP2014527259A - 放出型プラズマ源 - Google Patents
放出型プラズマ源 Download PDFInfo
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32422—Arrangement for selecting ions or species in the plasma
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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- H01J37/32431—Constructional details of the reactor
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
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Abstract
Description
Claims (20)
- イオン化電磁場を放出型プラズマ源の場発生部分内に発生させることであって、前記イオン化電磁場は、前記放出型プラズマ源の場放出部分を通して、前記放出プラズマ源に結合された受容部分まで延在し、前記場放出部分は、前記場発生部分と前記受容部分との間に結合されている、ことと、
プラズマの第1の部分を前記場発生部分内に持続させることと、
前記場放出部分内の前記イオン化電磁場を減衰させることにより、減衰されたイオン化電磁場を前記受容部分の少なくとも一部内に形成することと、
前記減衰されたイオン化電磁場を使用して、前記プラズマの第2の部分を前記受容部分の少なくとも一部内に持続させることと
を含む、方法。 - 前記場放出部分は、その長さおよび断面寸法と前記場放出部分の内側表面上の誘電体との組み合わせを介して、前記イオン化電磁場を減衰させる、請求項1に記載の方法。
- 前記イオン化電磁場は、電場である、請求項1に記載の方法。
- 前記イオン化電磁場は、前記プラズマに容量結合される、請求項3に記載の方法。
- 前記イオン化電磁場は、前記プラズマに誘導結合される、請求項3に記載の方法。
- 活性化していないガスに前記プラズマを通過させることをさらに含む、請求項1に記載の方法。
- 前記活性化していないガスに前記受容部分内側の前記プラズマを通過させることをさらに含む、請求項6に記載の方法。
- 前記場発生部分と前記受容部分との間に電圧電位を確立することをさらに含む、請求項1に記載の方法。
- 前記減衰されたイオン化電磁場を介して、前記放出型プラズマ源と前記受容部分との間の界面に、前記プラズマの第2の部分を持続させることをさらに含む、請求項1に記載の方法。
- プラズマおよびイオン化電磁場を発生させる場発生部分であって、前記イオン化電磁場は、前記場発生部分から延在する、場発生部分と、
前記場発生部分に結合された場放出部分であって、前記場放出部分は、前記イオン化電磁場が前記場放出部分を通過するにつれて、前記イオン化電磁場を減衰させることにより、減衰されたイオン化電磁場を発生させる、場放出部分と、
前記減衰されたイオン化電磁場を受容する受容部分であって、前記受容部分は、前記減衰されたイオン化電磁場を用いて前記受容部分内にプラズマを持続させる、受容部分と
を備える、装置。 - 前記場放出部分は、前記イオン化電磁場が前記場放出部分を通過するにつれて、前記イオン化電磁場を減衰させる誘電体を含む、請求項10に記載の装置。
- 前記場放出部分は、前記イオン化電磁場をさらに減衰させる断面および長さを有する、請求項11に記載の装置。
- 前記減衰されたイオン化電磁場は、少なくとも、前記イオン化電磁場の10分の1以下である、請求項12に記載の装置。
- 前記イオン化電磁場は、電場である、請求項10に記載の装置。
- 活性化していないガスが、前記プラズマに送給され、前記イオン化電磁場によって、少なくとも部分的に、第1のラジカルに変換される、請求項10に記載の装置。
- 前記活性化していないガスは、前記プラズマに送給され、前記減衰されたイオン化電磁場によって、少なくとも部分的に、第2のラジカルに変換される、請求項15に記載の装置。
- 前記場発生部分は、エネルギーを前記プラズマに誘導結合する、請求項10に記載の装置。
- 前記場発生部分は、エネルギーを前記プラズマに容量結合する、請求項10に記載の装置。
- イオン化電磁場を発生させる場発生部分であって、前記イオン化電磁場は、前記場発生部分から延在する、場発生部分と、
前記イオン化電磁場を減衰させることにより、減衰されたイオン化電磁場を形成する場放出部分であって、前記減衰されたイオン化電磁場は、前記場放出部分に結合された受容部分内にプラズマを持続させるために十分なエネルギーを有する、場放出部分と
を備える、プラズマ源。 - 前記場放出部分は、前記イオン化電磁場を制御可能に減衰させる、請求項19に記載のプラズマ源。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/173,752 | 2011-06-30 | ||
US13/173,752 US10225919B2 (en) | 2011-06-30 | 2011-06-30 | Projected plasma source |
PCT/US2012/043616 WO2013003203A1 (en) | 2011-06-30 | 2012-06-21 | Projected plasma source |
Publications (2)
Publication Number | Publication Date |
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JP2014527259A true JP2014527259A (ja) | 2014-10-09 |
JP6057480B2 JP6057480B2 (ja) | 2017-01-11 |
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Application Number | Title | Priority Date | Filing Date |
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JP2014518666A Active JP6057480B2 (ja) | 2011-06-30 | 2012-06-21 | 放出型プラズマ源 |
Country Status (6)
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US (1) | US10225919B2 (ja) |
JP (1) | JP6057480B2 (ja) |
KR (2) | KR20140037150A (ja) |
CN (1) | CN103748972B (ja) |
TW (1) | TWI490911B (ja) |
WO (1) | WO2013003203A1 (ja) |
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KR101839714B1 (ko) | 2018-03-16 |
CN103748972A (zh) | 2014-04-23 |
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WO2013003203A1 (en) | 2013-01-03 |
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