JP2014527121A - 複合材料を形成する方法及びヒートシンク - Google Patents
複合材料を形成する方法及びヒートシンク Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 27
- 239000002131 composite material Substances 0.000 title description 32
- 239000002245 particle Substances 0.000 claims abstract description 66
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 35
- 239000002923 metal particle Substances 0.000 claims abstract description 35
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 34
- 239000002905 metal composite material Substances 0.000 claims abstract description 33
- 230000005855 radiation Effects 0.000 claims abstract description 13
- 238000002844 melting Methods 0.000 claims abstract description 12
- 230000008018 melting Effects 0.000 claims abstract description 12
- 239000011159 matrix material Substances 0.000 claims abstract description 11
- 229910003460 diamond Inorganic materials 0.000 claims description 33
- 239000010432 diamond Substances 0.000 claims description 33
- 229910052802 copper Inorganic materials 0.000 claims description 26
- 239000010949 copper Substances 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 24
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910002804 graphite Inorganic materials 0.000 claims description 2
- 239000010439 graphite Substances 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 115
- 238000004519 manufacturing process Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 238000012805 post-processing Methods 0.000 description 7
- 239000002356 single layer Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 230000003746 surface roughness Effects 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910009372 YVO4 Inorganic materials 0.000 description 2
- 239000011149 active material Substances 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000008595 infiltration Effects 0.000 description 2
- 238000001764 infiltration Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000004308 accommodation Effects 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000012768 molten material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000009715 pressure infiltration Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F21/00—Constructions of heat-exchange apparatus characterised by the selection of particular materials
- F28F21/02—Constructions of heat-exchange apparatus characterised by the selection of particular materials of carbon, e.g. graphite
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F21/00—Constructions of heat-exchange apparatus characterised by the selection of particular materials
- F28F21/08—Constructions of heat-exchange apparatus characterised by the selection of particular materials of metal
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H01L23/00—Details of semiconductor or other solid state devices
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3731—Ceramic materials or glass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3732—Diamonds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
- H01S5/02484—Sapphire or diamond heat spreaders
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- Toxicology (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
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Abstract
Description
本発明の課題は、改善された性質を有する複合材料を製造することができるか、もしくは該複合材料の形成の際の費用を低下させることができる、ヒートシンク用の炭素−金属複合材料の形成方法並びにヒートシンクを記載することである。
この課題は、本発明によれば、炭素粒子を有する少なくとも1つの層と、金属粒子を有する少なくとも1つの層とが、相互に重なり合って適用され、その際に、該炭素−金属複合材料の(層の)形成のための該層が、レーザ放射の照射により一緒に融解される、ヒートシンク用の炭素−金属複合材料を形成する方法により解決される。該金属粒子及び該炭素粒子はこの際に、典型的には粉末の形態で適用される。
Claims (13)
- ヒートシンク(13)用の炭素−金属複合材料(8)を形成する方法であって、
炭素粒子(5)を有する少なくとも1つの層(5a)及び金属粒子(6)を有する少なくとも1つの層(6a)を相互に重なり合って適用し、並びに
該層(5a、6a)にレーザ放射(7)を照射することにより、該層(5a、6a)を融解させて、該炭素−金属複合材料(8)を形成する
ことを含む、炭素−金属複合材料(8)を形成する方法。 - 該炭素−金属複合材料(8)からなる成形体(10)の形成のために、層(5a、6a)の該適用及び該融解を何度も繰り返す、請求項1記載の方法。
- 該成形体(10)のための終端層の形成のために、金属粒子を有する層(8b)を適用し、かつレーザ放射(7)での照射により溶着させる、請求項2記載の方法。
- 該層(5a)のうち少なくとも2つが、異なる粒度を有する炭素粒子を含有する、請求項2又は3記載の方法。
- 該炭素−金属複合材料の少なくとも2つの層(8a)を、炭素粒子(5)と、金属粒子(6)から形成された金属マトリックス(9)との異なる体積比で製造する、請求項1から4までのいずれか1項記載の方法。
- 該金属粒子(6)が、銅、銀、金、アルミニウム、スズ及びチタンを含む群から選択されている、請求項1から5までのいずれか1項記載の方法。
- 該炭素粒子(5)が、ダイヤモンド、黒鉛及び炭化物を含む群から選択されている、請求項1から6までのいずれか1項記載の方法。
- 更に、金属粒子(6)からなる少なくとも1つの層(6a)を基板(3)上へ適用し、並びに該層(6a)を該基板(3)と一緒にレーザ照射により融解する
ことを含む、請求項1から7までのいずれか1項記載の方法。 - 厚さ方向(Z)で変化する密度を有する、炭素粒子(5)を有する少なくとも1つの層(5a)を適用する、請求項1から8までのいずれか1項記載の方法。
- 部材(14)用のヒートシンク(13)であって、
多数の層(8a、8b)を含む成形体(10)を含み、該層が、それぞれ炭素粒子(5)を金属−マトリックス(9)中に含有する、
ヒートシンク(13)。 - 更に、該成形体(10)上で形成される位置決め面(14)上に配置されている、部材、特にレーザダイオード(15)又はレーザ用ディスクを含む、請求項10記載のヒートシンク。
- 該部材が直接、位置決め面(14)上に配置されている、請求項11記載のヒートシンク。
- 更に、該成形体(10)を取り付けるための基体(12)を含む、請求項10から12までのいずれか1項記載のヒートシンク。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102011079471.9 | 2011-07-20 | ||
DE102011079471.9A DE102011079471B4 (de) | 2011-07-20 | 2011-07-20 | Verfahren zur Bildung eines Kohlenstoff-Metall-Verbundwerkstoffs |
PCT/EP2012/063560 WO2013010870A1 (de) | 2011-07-20 | 2012-07-11 | Verfahren zur bildung eines verbundwerkstoffs und wärmesenke |
Publications (2)
Publication Number | Publication Date |
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JP2014527121A true JP2014527121A (ja) | 2014-10-09 |
JP6073313B2 JP6073313B2 (ja) | 2017-02-01 |
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JP2014520608A Active JP6073313B2 (ja) | 2011-07-20 | 2012-07-11 | 複合材料を形成する方法及びヒートシンク |
Country Status (6)
Country | Link |
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US (1) | US9995541B2 (ja) |
JP (1) | JP6073313B2 (ja) |
KR (2) | KR102095175B1 (ja) |
CN (1) | CN103814441B (ja) |
DE (1) | DE102011079471B4 (ja) |
WO (1) | WO2013010870A1 (ja) |
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CN104289712B (zh) * | 2014-09-16 | 2016-08-24 | 北京工业大学 | 一种slm制造热沉成形摆放方法及支撑添加方法 |
DE102015115962B4 (de) * | 2015-07-10 | 2022-10-06 | GEFERTEC GmbH | Verfahren zur Erzeugung eines metallischen Werkstoffgemischs bei der additiven Fertigung |
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DE102016113246A1 (de) * | 2016-07-19 | 2018-01-25 | GEFERTEC GmbH | Verfahren und Vorrichtung zur Erzeugung eines metallischen Werkstoffgemischs bei der additiven Fertigung |
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CN110243213A (zh) * | 2019-06-24 | 2019-09-17 | 华东理工大学 | 一种复合结构的平板吸液芯及其制造方法 |
CN113000859A (zh) * | 2021-02-24 | 2021-06-22 | 武汉大学 | 一种用于粉末床激光熔融增材制造的3d石墨烯原位自生装置 |
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US9995541B2 (en) | 2018-06-12 |
KR102095175B1 (ko) | 2020-03-30 |
KR20190058684A (ko) | 2019-05-29 |
WO2013010870A1 (de) | 2013-01-24 |
KR20140070533A (ko) | 2014-06-10 |
DE102011079471B4 (de) | 2024-05-29 |
CN103814441B (zh) | 2017-02-22 |
CN103814441A (zh) | 2014-05-21 |
DE102011079471A1 (de) | 2013-01-24 |
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