JP2014522564A - セラミックのホウ素含有ドーピングペーストおよびそのための方法 - Google Patents

セラミックのホウ素含有ドーピングペーストおよびそのための方法 Download PDF

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JP2014522564A
JP2014522564A JP2014509448A JP2014509448A JP2014522564A JP 2014522564 A JP2014522564 A JP 2014522564A JP 2014509448 A JP2014509448 A JP 2014509448A JP 2014509448 A JP2014509448 A JP 2014509448A JP 2014522564 A JP2014522564 A JP 2014522564A
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boron
ceramic
containing dopant
dopant paste
paste
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JP2014522564A5 (enExample
Inventor
ケルマン マクシム
ブイ．ロゴジナ エレナ
ワン ゴンゴウ
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イノヴァライト インコーポレイテッド
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/62605—Treating the starting powders individually or as mixtures
    • C04B35/62625—Wet mixtures
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/10—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
    • C04B35/111—Fine ceramics
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/62605—Treating the starting powders individually or as mixtures
    • C04B35/62625—Wet mixtures
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
    • C04B35/632—Organic additives
    • C04B35/636—Polysaccharides or derivatives thereof
    • C04B35/6365—Cellulose or derivatives thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2225—Diffusion sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
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    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3409—Boron oxide, borates, boric acids, or oxide forming salts thereof, e.g. borax
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/38—Non-oxide ceramic constituents or additives
    • C04B2235/3804—Borides
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
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    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/38—Non-oxide ceramic constituents or additives
    • C04B2235/3804—Borides
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
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    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/38—Non-oxide ceramic constituents or additives
    • C04B2235/3852—Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
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  • Engineering & Computer Science (AREA)
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  • Ceramic Engineering (AREA)
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  • Organic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Crystallography & Structural Chemistry (AREA)
JP2014509448A 2011-05-03 2012-05-03 セラミックのホウ素含有ドーピングペーストおよびそのための方法 Pending JP2014522564A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/099,794 2011-05-03
US13/099,794 US9156740B2 (en) 2011-05-03 2011-05-03 Ceramic boron-containing doping paste and methods therefor
PCT/US2012/036359 WO2012151422A1 (en) 2011-05-03 2012-05-03 Ceramic boron-containing doping paste and methods therefor

Publications (2)

Publication Number Publication Date
JP2014522564A true JP2014522564A (ja) 2014-09-04
JP2014522564A5 JP2014522564A5 (enExample) 2015-06-25

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US (1) US9156740B2 (enExample)
JP (1) JP2014522564A (enExample)
CN (1) CN103649011B (enExample)
TW (1) TW201300341A (enExample)
WO (1) WO2012151422A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017183648A (ja) * 2016-03-31 2017-10-05 帝人株式会社 ドーパント組成物、ドーパント注入層、ドープ層の形成方法、及び半導体デバイスの製造方法

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US9048374B1 (en) 2013-11-20 2015-06-02 E I Du Pont De Nemours And Company Method for manufacturing an interdigitated back contact solar cell
US9059341B1 (en) 2014-01-23 2015-06-16 E I Du Pont De Nemours And Company Method for manufacturing an interdigitated back contact solar cell
CN104261822B (zh) * 2014-09-19 2015-11-25 中南大学 一种氧化锆复合陶瓷及其制备方法
CN104934501B (zh) * 2015-05-30 2017-03-22 浙江理工大学 一种基于Sm2O3/n‑Si异质结构的紫外光电器件的制备方法
US9306088B1 (en) 2015-09-17 2016-04-05 E I Du Pont De Nemours And Company Method for manufacturing back contact solar cells
DE102015226516B4 (de) * 2015-12-22 2018-02-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein Verfahren zur Dotierung von Halbleitersubstraten mittels eines Co-Diffusionsprozesses
CN105913896B (zh) * 2016-06-29 2017-12-26 东莞珂洛赫慕电子材料科技有限公司 一种低温固化电极浆料的制备方法
CN108063179B (zh) * 2017-12-20 2019-05-31 清华大学 一种纳米晶多孔块体硅热电材料及其制备方法
CN109860032A (zh) * 2019-03-07 2019-06-07 常州时创能源科技有限公司 含硼掺杂剂浆料及其应用
CN111490128A (zh) * 2019-10-22 2020-08-04 国家电投集团西安太阳能电力有限公司 一种n-pert双面电池氧化硅/氮化硅叠层膜的制备方法
CN111261729B (zh) * 2019-12-31 2022-03-29 上海匡宇科技股份有限公司 一种掺杂用硅浆料、制备方法及硅片的掺杂方法

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JPS622472B2 (enExample) * 1981-07-27 1987-01-20 Handotai Energy Kenkyusho
JPH03119722A (ja) * 1989-10-03 1991-05-22 Tokyo Ohka Kogyo Co Ltd ドーパントフィルム及びそれを使用した不純物拡散方法
JP2002539615A (ja) * 1999-03-11 2002-11-19 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフトング 半導体にｐ、ｐ＋およびｎ、ｎ＋領域を形成するためのドーパント・ペースト
JP2007026934A (ja) * 2005-07-19 2007-02-01 Kyocera Corp 導電性ペースト及びそれを用いて作製される太陽電池素子
JP2010056465A (ja) * 2008-08-29 2010-03-11 Shin-Etsu Chemical Co Ltd 拡散用ボロンペースト及びそれを用いた太陽電池の製造方法
JP2010062223A (ja) * 2008-09-01 2010-03-18 Japan Vam & Poval Co Ltd ホウ素拡散用塗布液

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GB653951A (en) * 1948-11-29 1951-05-30 Mini Of Supply Improvements in or relating to preparation of boron coatings
JPS4954282A (enExample) * 1972-09-29 1974-05-27
US4104091A (en) 1977-05-20 1978-08-01 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Application of semiconductor diffusants to solar cells by screen printing
JPS5530952A (en) * 1978-08-29 1980-03-05 Nippon Kokuen Kogyo Kk Manufacturing of insulation substrate having the copper- lined
JPH0954282A (ja) * 1995-08-18 1997-02-25 Matsushita Electric Ind Co Ltd 立体表示装置
CN1184546C (zh) * 1997-03-04 2005-01-12 精工爱普生株式会社 电子电路、半导体装置、电子装置及钟表
EP1795514A4 (en) * 2004-08-18 2012-05-09 Tokuyama Corp CERAMIC SUBSTRATE FOR MOUNTING LIGHT-EMITTING DEVICE AND PRODUCTION METHOD THEREFOR
CN101168472A (zh) * 2006-10-24 2008-04-30 北京有色金属研究总院 一种无铅铂电极浆料及其制造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS622472B2 (enExample) * 1981-07-27 1987-01-20 Handotai Energy Kenkyusho
JPH03119722A (ja) * 1989-10-03 1991-05-22 Tokyo Ohka Kogyo Co Ltd ドーパントフィルム及びそれを使用した不純物拡散方法
JP2002539615A (ja) * 1999-03-11 2002-11-19 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフトング 半導体にｐ、ｐ＋およびｎ、ｎ＋領域を形成するためのドーパント・ペースト
JP2007026934A (ja) * 2005-07-19 2007-02-01 Kyocera Corp 導電性ペースト及びそれを用いて作製される太陽電池素子
JP2010056465A (ja) * 2008-08-29 2010-03-11 Shin-Etsu Chemical Co Ltd 拡散用ボロンペースト及びそれを用いた太陽電池の製造方法
JP2010062223A (ja) * 2008-09-01 2010-03-18 Japan Vam & Poval Co Ltd ホウ素拡散用塗布液

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017183648A (ja) * 2016-03-31 2017-10-05 帝人株式会社 ドーパント組成物、ドーパント注入層、ドープ層の形成方法、及び半導体デバイスの製造方法

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US20120280183A1 (en) 2012-11-08
CN103649011B (zh) 2016-07-13
WO2012151422A1 (en) 2012-11-08
TW201300341A (zh) 2013-01-01
CN103649011A (zh) 2014-03-19
US9156740B2 (en) 2015-10-13

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